Abstract: The present invention relates to a conjugate for preventing and treating viral infections and a use thereof, and in particular, to a protein-anti-influenza compound conjugate having a structure of formula I-1 or a pharmaceutically acceptable salt, an ester, an isomer, a solvate, a prodrug or an isotope label thereof. The conjugate has small molecules (D1 and D2) linked, by means of linkers (L1 and L2) to an Fc monomer, an Fc domain, an Fc linker peptide, an albumin or an albumin linker peptide (E) and having anti-influenza virus activity. The conjugate or the intermediate compound of the present invention has significant anti-influenza virus activity, and meanwhile, has excellent in vitro/in vivo pharmacokinetic property and safety and has good clinical application prospects.

Abstract: The three-state spintronic device includes: a bottom electrode, a magnetic tunnel junction and a top electrode from bottom to top. The magnetic tunnel junction includes: a spin-orbit coupling layer, a ferromagnetic free layer, a barrier tunneling layer, a ferromagnetic reference layer, three local magnetic domain wall pinning centers and domain wall nucleation centers. An antisymmetric exchange interaction is modulated, and the magnetic domain wall pinning centers are embedded in an interface between a heavy metal and the ferromagnetic free layer. The magnetic domain wall nucleation centers are at two ends of the ferromagnetic free layer. A current pulse flows through the spin-orbit coupling layer to generate a spin current and the spin current is injected into the ferromagnetic free layer. Under a control of all-electrical controlled, an effective field of a spin-orbit torque drives domain wall to move and displace.

Abstract: A light-emitting diode and a light-emitting device are provided, the light-emitting diode includes a substrate, an epitaxial structure and a Bragg reflector. The Bragg reflector includes first film stacks and second film stacks repeatedly and alternately stacked. The first film stack includes at least one pair layer consisting of a first material layer and a second material layer, an optical thickness of the first material layer is greater than that of the second material layer in each pair layer. The second film stack includes multiple pair layers consisting of a first material layer and a second material layer; and the second film stack is formed by repeatedly and alternately stacking a pair layer with optical thickness of the first material layer greater than that of the second material layer and a pair layer with optical thickness of the first material layer smaller than that of the second material layer.

Abstract: A light-emitting diode and a light-emitting device are provided, relating to the field of semiconductor manufacturing, including a substrate, an epitaxial structure and a Bragg reflective layer. The Bragg reflective layer includes a first film stack and a second film stack alternately and repetitively arranged. The first film stack and the second film stack both include a first material layer with a first refractive index and a second material layer with a second refractive index, the first material layer and the second material layer are alternately stacked repeatedly, and the first refractive index is lower than the second refractive index. In the first film stack, an optical thickness of the first material layer is greater than that of the second material layer. In the second film stack, an optical thickness of the first material layer is less than that of the second material layer.

Abstract: An information handling system includes an air mover and a management controller configured to determine an airflow direction of the air mover. The air mover includes an enclosure base and a gear disposed within the enclosure base. The gear is configured to rotate an outlet frame, and the outlet frame is configured to rotate within the enclosure base. The outlet frame includes a nozzle structure that is configured to guide the airflow direction according to a determination of the management controller.

Abstract: The disclosure provides an electronic device. The electronic device has a first touch area and a second touch area. The first touch module is disposed in the first touch area and includes multiple first touch electrodes. The second touch module is disposed in the second touch area and includes multiple second touch electrodes. Multiple display electrodes are disposed in the first touch area, but not disposed in the second touch area. The integrated chip is electrically connected to the first touch module and the second touch module, and is configured to process a first touch signal transmitted by at least one of the first touch electrodes and process a second touch signal transmitted by at least one of the second touch electrodes. The electronic device of the disclosure can effectively save the number of pads of chips and reduce the chip space.

Abstract: The application provides a foldable holder and an electronic device. A bottom plate of the foldable holder is rotationally connected to a first support plate through a first rotating portion, and a second support plate is rotationally connected to the first support plate through a second rotating portion. A clamping portion is mounted on the first support plate and slidable relative to the first support plate. When the foldable holder is in a closed state, the clamping portion clamps the second rotating portion to lock the first support plate and the second support plate, when the first support plate is at an angle to the bottom plate, the clamping portion is unlocked from the second rotating portion and clamped with the first rotating portion, the unlocking of the second rotating portion enables the second support plate to rotate relative to the first support plate.

Abstract: Provided are a corrosion-resistant oxide dispersion strengthened steel and a method for preparing the corrosion-resistant oxide dispersion strengthened steel. The corrosion-resistant oxide dispersion strengthened steel includes in percentage by mass: Cr at 8.0 wt %-10.0 wt %, Al at 4.0 wt %-6.0 wt %, Ce at 0.2 wt %-0.8 wt %, Y at 0.2 wt %-0.4 wt %, O at 0.05 wt %-0.3 wt %, C less than or equal to 0.0016 wt %, and the balance of Fe.

Abstract: The present invention provides a spin-orbit torque magnetoresistive memory structure, which comprises a first conductive layer, a magnetic tunneling junction (MTJ) layer, a channel layer, and a second conductive layer stacked sequentially. The MTJ layer is disposed on the first conductive layer. The channel layer is disposed on the MTJ layer. The second conductive layer is disposed on the channel layer. These structures are fabricated sequentially using lithography. By forming the MTJ layer before the channel layer, redeposition of the metal of the channel layer on the MTJ layer can be avoided.

Abstract: In one embodiment, an apparatus includes a processor, a laser, and a modulator. The processor is to generate a first electrical signal including first data and a second electrical signal including second data. The laser is to generate a multiplexed carrier signal comprising a first carrier signal and a second carrier signal, the laser to operate at a first laser power setting. The modulator is to generate a multiplexed optical signal including a first optical signal based in part on the first electrical signal and the first carrier signal and a second optical signal based in part on the second electrical signal and the second carrier signal. The apparatus is to transmit the multiplexed optical signal to a device and to retransmit the first data from the apparatus to the device based on a detection of error in a received version of the first data at the device. Other embodiments are described and claimed.

Abstract: An integrated circuit (IC) device includes a circuit region, a lower metal layer over the circuit region, and an upper metal layer over the lower metal layer. The lower metal layer includes a plurality of lower conductive patterns elongated along a first axis. The upper metal layer includes a plurality of upper conductive patterns elongated along a second axis transverse to the first axis. The plurality of upper conductive patterns includes at least one input or output configured to electrically couple the circuit region to external circuitry outside the circuit region. The upper metal layer further includes a first lateral upper conductive pattern contiguous with and projecting, along the first axis, from a first upper conductive pattern among the plurality of upper conductive patterns. The first lateral upper conductive pattern is over and electrically coupled to a first lower conductive pattern among the plurality of lower conductive patterns.

Abstract: This application provides a foldable support and an electronic device. The foldable support includes a bottom plate, a first support plate, a second support plate, a first magnetic member, and a second magnetic member: the first support plate is connected to the bottom plate; the second support plate is connected to the first support plate; and the first magnetic member is arranged on the first support plate, the second magnetic member is arranged on the second support plate, and the first magnetic member is configured to attract the second magnetic member in a case that an included angle between the first support plate and the bottom plate is less than a preset angle, and is further configured to repel the second magnetic member in a case that the included angle between the first support plate and the bottom plate is greater than or equal to the preset angle.

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, strained layers, source/drain contact patterns, a gate contact via, and source/drain contact vias. The gate structure is disposed over the semiconductor substrate. The strained layers are disposed aside the gate structure. The source/drain contact patterns are disposed on and electrically connected to the strained layers. Top surfaces of the source/drain contact patterns are coplanar with a top surface of the gate structure. The gate contact via is disposed on and electrically connected to the gate structure. The source/drain contact vias are disposed on and electrically connected to the source/drain contact patterns.

Abstract: An electronic device includes a battery module, a battery connector and a controller is provided. The battery connector includes a first connector and a second connector. The first connector is installed on the battery module and includes a first metal component and an enable pin. The first metal component is disposed on a housing of the first connector and is coupled to the enable pin. The second connector includes a second metal component, a detection pin and a ground pin. The second metal component is disposed on a housing of the second connector. The detection pin is coupled to the second metal component. The ground pin is coupled to a ground potential and its position corresponds to the position of the enable pin. The controller determines a connection status of the first connector and the second connector according to an external signal on the detection pin.

Abstract: A method for manufacturing an interconnect structure includes: forming a first dielectric layer; forming a mask; patterning the first dielectric layer through the mask to form a trench, an inner surface of the trench having two first portions opposite to each other along an X direction, two second portions opposite to each other along a Y direction, and a bottom portion; forming a second dielectric layer over the mask and the patterned first dielectric layer, and along an inner surface of the trench; etching the second dielectric layer by directing an etchant in a predetermined direction such that a first part of the second dielectric layer on the two first portions and the bottom portion is removed, and a second part of the second dielectric layer on the second portions of the trench remains and is formed into two reinforcing spacers; and forming a trench-filling element.

Abstract: Provided are a corrosion-resistant oxide dispersion strengthened steel and a method for preparing the corrosion-resistant oxide dispersion strengthened steel. The corrosion-resistant oxide dispersion strengthened steel includes in percentage by mass: Cr at 8.0 wt %-10.0 wt %, Al at 4.0 wt %-6.0 wt %, Ce at 0.2 wt %-0.8 wt %, Y at 0.2 wt %-0.4 wt %, O at 0.05 wt %-0.3 wt %, C less than or equal to 0.0016 wt %, and the balance of Fe.

Abstract: A method according to the present disclosure includes providing a first workpiece that includes a first substrate and a first interconnect structure, providing a second workpiece that includes a second substrate, a second interconnect structure, and a through via extending through a portion of the second substrate and a portion of the second interconnect structure, forming a first bonding layer on the first interconnect structure, forming a second bonding layer on the second interconnect structure, bonding the second workpiece to the first workpiece by directly bonding the second bonding layer to the first bonding layer, thinning the second substrate, forming a protective film over the thinned second substrate, forming a backside via opening through the protective film and the thinned second substrate to expose the through via, and forming a backside through via in the backside via opening to physically couple to the through via.

Abstract: The present disclosure provides a display module, a driving method, and a display apparatus. The display module includes a display panel, a cover, and a color-changing assembly. The color-changing assembly is at least in the first region of the cover extended outside of the display panel; the color-changing assembly includes a first substrate, a second substrate, and a plurality of microcapsule structures; the plurality of microcapsule structures includes a plurality of first charged particles and a plurality of second charged particles; the first charged particle and the second charged particles have different colors and opposite charges; a first electrode layer including a plurality of first electrode is on a side of the first substrate facing the plurality of microcapsule structures; and an orthographic projection of one first electrode on the first substrate is overlapped with an orthographic projection of at least one microcapsule structure on the first substrate.

Abstract: The semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a first dielectric layer, a first metal layer, a second metal layer, a first etching stop layer, a second etching stop layer, a second dielectric layer, a first via and a second via. The first metal layer and the second metal are embedded in the first dielectric layer. The first etching stop layer is disposed on the first dielectric layer. The second etching stop layer is disposed on the first etching stop layer. The second dielectric layer is disposed on the second etching stop layer. The first via and the second via are embedded in the second dielectric layer. A width of the second etching stop layer is smaller a width of the first etching stop layer.

Abstract: A radiotherapy system includes a neutron acceptor, an aerosolization device for aerosolizing the neutron acceptor, and an energy beam generator. A method for treating cancer, including: administering to a subject in need thereof an effective amount of an aerosolized neutron acceptor; and irradiating the subject with neutrons. A method for diagnosing cancer, including: administering to a subject in need thereof an effective amount of an aerosolized radioactive agent; and receiving an energy beam signal from the subject. A method for delivering a neutron receptor to a subject during radiation therapy, including aerosolizing the neutron receptor and administering to the subject an effective amount of the neutron receptor.