Abstract: The invention provides a oriented white polyester film, which includes at least one polyester film with a cavitation additive, wherein the cavitation additive includes poly(methyl methacrylate-co-methyl methacrylamide), a copolymer of sulfophthalate salt and nylon, polyarylate (PAR), ethylene methacrylate (EMA), ethylene methacrylate acrylic acid terpolymer (EMAAA), polyetherimide (PEI), metallocene catalyzed cyclic olefin copolymer (mCOC) or combinations thereof.

Abstract: The disclosed is a copolymer having a formula as: R1 is a combination of naphthalene, phenylene, butyl, and hexyl. R2 is a combination of ethylene, cyclohexlene, 2-methylpropyl, and neopentyl. n is a number of 1500 to 3000. The copolymer has a transparency greater than 80%, a thermal resistance greater than 100, a moisture absorption less than 0.5 wt %, and yellowing under UV/climate resistance greater than 1000 hours, such that the copolymer is adapted to be applied in packaging material for light emitting devices.

Abstract: A method for improving an optical sensor is disclosed, which includes the following steps: providing an optical sensor; acid-treating the surface of the optical sensor; forming a thin metal film on the acid-treated surface of the optical sensor; and plasma-modifying the thin metal film on the optical sensor. The aforesaid method is to clean the surface of the optical sensor and then to improve the hydrophilicity thereof by acid treatment. The thin metal film subsequently formed has good flatness and improved adhesion to the optical sensor. Once the optical sensor has the improved hydrophilicity, the plasma modification is performed to further improve optical performance of the optical sensor.

Abstract: Disclosed is a method for packaging an LED by a thermoplastic copolymer. The copolymer is polymerized by 100 parts by weight of an acrylic ester, 0.1 to 30 parts by weight of a hydrogen bond monomer, and 0.1 to 70 parts by weight of a bulky monomer. The copolymer has transparency greater than 90%, thermal resistance greater than 130° C., and moisture absorption less than 0.5 wt %, such that the copolymer may be applied as packaging material for a light emitting device.

Abstract: The invention provides an organic/inorganic hybrid material and the method for manufacturing the same. A variety of functional monomers are co-polymerized to form a copolymer. The copolymer is subjected to sol-gel reactions with metal alkoxide oligomers to form an organic/inorganic hybrid material. The hybrid material has a high refractive index, a low moisture absorption, a high light transmission ratio, and a high glass transition point, such that the material can be applied in high light extraction efficient LED sealing materials, thin and light myopia/hypropia lens, portable projector lens, high brightness LCD prism films, solar cell refractive photoelectric conversion mirrors, and camera phone/digital camera lens.

Abstract: A method of directing a viewer's attention in an image display to enhance the perceived image quality and thus the viewer's preference of the image is disclosed. An image with an area of interest (AOI) is provided. The AOI is briefly displayed for a first time period. Subsequently, the image is normally displayed in its entirety for a second time period that is longer than the first time period. As a result, the viewer's attention is involuntarily directed to the AOI in a subliminal manner.

Abstract: Disclosed is a method for packaging an LED by a thermoplastic copolymer. The copolymer is polymerized by 100 parts by weight of an acrylic ester, 0.1 to 30 parts by weight of a hydrogen bond monomer, and 0.1 to 70 parts by weight of a bulky monomer. The copolymer has transparency greater than 90%, thermal resistance greater than 130° C., and moisture absorption less than 0.5 wt %, such that the copolymer may be applied as packaging material for a light emitting device.

Abstract: A method of printing geometric figures recalculates and recombines coordinates of the scan lines or poly scan lines to transform into polygonal geometric figures with less output the data and command length, thereby increasing the printing speed of a printer. The method also can be applied to any geometric figures or texts constructing by the scan lines or the poly scan lines.

Abstract: A semiconductor structure having an opening formed in a porous dielectric layer is provided. The exposed pores of the dielectric layer along the sidewalls of the opening are sealed. The sealing may comprise a selective or a non-selective deposition method. The sealing layer has a substantially uniform thickness in one portion of the opening and a non-uniform thickness in another portion of the opening. A damascene interconnect structure having a pore sealing layer is provided as is its method of manufacture.

Abstract: The disclosed is a copolymer having a formula as: R1 is a combination of naphthalene, phenylene, butyl, and hexyl. R2 is a combination of ethylene, cyclohexene, 2-methylpropyl, and neopentyl. n is a number of 1500 to 3000. The copolymer has a transparency greater than 80%, a thermal resistance greater than 100° C., a moisture absorption less than 0.5 wt %, and yellowing under UV/climate resistance greater than 1000 hours, such that the copolymer is adapted to be applied in packaging material for light emitting devices.

Abstract: A method for packaging a light emitting diode is provided. The steps comprise: providing a material; drying the material; feeding the material into a feeding inlet; and providing a mold with pre-embedded light diodes. The material enters the feeding inlet and is injected into the mold by pressing a screw, allowing the material to combine with the light emitting diode.

Abstract: The disclosed is a blend including 20 to 80 parts by weight of polycarbonate, 20 to 80 parts by weight of polyarylate, and 20 to 80 parts by weight of copolymer having a formula as below: wherein R1 is a combination of at least two of ethylene, cyclohexlene dimethylene, 2-methyl propyl, and neopentyl. R2 is a combination of at least two of naphthalene, phenylene, butyl, and hexyl. n is a number of 1500 to 3000. The blend has high transparency, high thermal resistance, and high yellowing resistance under UV/climate, such that the blend is suitable to be applied in packaging material for light emitting device.

Abstract: The invention provides an organic/inorganic hybrid material and the method for manufacturing the same. A variety of functional monomers are co-polymerized to form a copolymer. The copolymer is subjected to sol-gel reactions with metal alkoxide oligomers to form an organic/inorganic hybrid material. The hybrid material has a high refractive index, a low moisture absorption, a high light transmission ratio, and a high glass transition point, such that the material can be applied in high light extraction efficient LED sealing materials, thin and light myopia/hypropia lens, portable projector lens, high brightness LCD prism films, solar cell refractive photoelectric conversion mirrors, and camera phone/digital camera lens.

Abstract: A method of improving surface flame resistance of a substrate is provided. A substrate is provided. An atmosphere pressure plasma process is performed on the surface of the substrate to form an inorganic film layer on the surface of the substrate, wherein a process gas of the atmosphere plasma process includes a flame resistance precursor, a carrier gas, and a plasma ignition gas. Particularly, the flame resistance precursor is selected from a siloxane compound, an inorganic alkoxide compound and a combination thereof. The siloxane compound has a formula of Si(OCnH2(n+1))4, n=1˜5, and the inorganic alkoxide compound has a formula of A(OCmH2m+1)4, where A represents Sn, Ti, Zr, Ce and m=2.

Abstract: A semiconductor method of manufacturing involving low-k dielectrics is provided. The method includes depositing a hydrocarbon of the general composition CxHy on the surface of a low-k dielectric. The hydrocarbon layer is deposited by reacting a precursor material, preferably C2H4 or (CH3)2CHC6H6CH3, using a PECVD process. In accordance with embodiments of this invention, carbon diffuses into the low-k dielectric, thereby reducing low-k dielectric damage caused by plasma processing or etching. Other embodiments comprise a semiconductor device having a low-k dielectric, wherein the low-k dielectric has carbon-adjusted dielectric region adjacent a trench sidewall and a bulk dielectric region. In preferred embodiments, the carbon-adjusted dielectric region has a carbon concentration not more than about 5% less than in the bulk dielectric region.

Abstract: A method of forming a low-k dielectric layer or film includes forming a porous low-k dielectric layer or film over a wafer or substrate. Active bonding is introduced into the porous low-k dielectric layer or fihm to improve damage resistance and chemical integrity of the layer or film, to retain the low dielectric constant of the layer and film after subsequent processing. Introduction of the active bonding may be accomplished by introducing OH and/or H radicals into pores of the porous low-k dielectric layer or film to generate, in the case of a Si based low-k dielectric layer or film, Si—OH and/or Si—H active bonds. After further processing of the low-k dielectric film, the active bonding is removed from the low-k dielectric layer or film.

Abstract: A method for preparing a pharmaceutical compound by way of magnetic carbon nanocapsules is disclosed. The method comprises steps of: (a) providing a magnetic carbon nanocapsule with C—(COOH)2 group, and Pt cations, to form a complex; (b) collecting the complex from the magnetic carbon nanocapsule; and (c) removing the Pt cations on the complex.

Abstract: A semiconductor method of manufacturing involving porous and/or carbon containing, low-k dielectrics is provided. The method includes forming a hydrocarbon of the general composition CxHy on the surface of the low-k dielectric. The hydrocarbon layer includes depositing a precursor material, preferably C2H4 or (CH3)2CHC6H6CH3. In accordance with embodiments of this invention, carbon diffuses into the low-k dielectric, thereby reducing carbon depletion damage caused by plasma processing or etching. Surface dielectric pores damaged by plasma processing are also repaired by sealing them with the CxHy layer. Embodiments include semiconductor devices, such as devices having damascene interconnect structures, manufacturing using methods provided.

Abstract: A method of printing geometric figures recalculates and recombines coordinates of the scan lines or poly scan lines to transform into polygonal geometric figures with less output the data and command length, thereby increasing the printing speed of a printer. The method also can be applied to any geometric figures or texts constructing by the scan lines or the poly scan lines.

Abstract: A process for producing hollow polyamide filaments having at least one continuous void that adds to a fiber-forming polyamide from about 0.05% to about 5% of a triazine compound prior to extrusion of fiber. The process results in a greater closure of voids and larger void space than when the triazine compound is not used.