Patents by Inventor Lingpeng Guann

Lingpeng Guann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SAWTOOH ELECTRIC FIELD DRIFT REGION STRUCTURE FOR PLANAR AND TRENCH POWER SEMICONDUCTOR DEVICES
    Publication number: 20190088761
    Abstract: A lateral super junction JFET is formed from stacked alternating P type and N type semiconductor layers over a P-epi layer supported on an N+ substrate. An N+ drain column extends down through the super junction structure and the P-epi to connect to the N+ substrate to make the device a bottom drain device. N+ source column and P+ gate column extend through the super junction but stop at the P-epi layer. A gate-drain avalanche clamp diode is formed from the bottom the P+ gate column through the P-epi to the N+ drain substrate.
    Type: Application
    Filed: October 5, 2018
    Publication date: March 21, 2019
    Inventors: Madhur Bobde, Lingpeng Guann, Anup Bhalla, Hamza Yilmaz
  • Lateral super junction device with high substrate-gate breakdown and built-in avalanche clamp diode
    Patent number: 10103240
    Abstract: A lateral super junction JFET is formed from stacked alternating P type and N type semiconductor layers over a P-epi layer supported on an N+ substrate. An N+ drain column extends down through the super junction structure and the P-epi to connect to the N+ substrate to make the device a bottom drain device. N+ source column and P+ gate column extend through the super junction but stop at the P-epi layer. A gate-drain avalanche clamp diode is formed from the bottom the P+ gate column through the P-epi to the N+ drain substrate.
    Type: Grant
    Filed: February 10, 2013
    Date of Patent: October 16, 2018
    Assignee: Alpha and Omega Semiconductor Incorporated
    Inventors: Madhur Bobde, Lingpeng Guann, Anup Bhalla, Hamza Yilmaz