Abstract: A deep learning-based digital holographic continuous phase noise reduction method for microstructure measurement is provided. A MEMS microstructure is simulated to generate an object phase image through generation of random matrix superposition, noise in a digital holographic continuous phase map is simultaneously simulated to generate a noise grayscale image, and a simulation data set is thus created. An end-to-end convolutional neural network is designed, and a trained convolutional neural network is trained and obtained. A holographic interference pattern of an object under measurement is collected by photographing, and after spectrum extraction, angular spectrum diffraction, phase unwrapping, and distortion compensation, a continuous phase map containing only the object phase and noise is obtained and input into the trained convolutional neural network to obtain an object phase map.

Abstract: In a digital holographic wrapped phase aberration compensation method based on deep learning, a random Zernike polynomial coefficient and a corresponding wrapped phase map are generated by a computer and are respectively treated as a learning label and a network to train a neural network model. A digital holographic optical setup is built to record a hologram of a sample to be measured, the wrapped phase map is inputted into the trained neural network model after numerical reconstruction, and the Zernike polynomial coefficient is outputted to reconstruct a phase aberration distribution and to compensate complex amplitude in a spatial domain. Phase filtering and unwrapping are performed on the compensated wrapped phase map, and Zernike polynomial fitting based on background segmentation is performed on the unwrapped phase to compensate for residual aberration.

Abstract: A superhydrophobic hemispherical array which can realize droplet pancake bouncing phenomenon is provided. The superhydrophobic hemispherical array shows an arc-shape structure which is narrow at the top and wide at the bottom, where a is the angle that substrate-gas interface goes across the gas and reaches substrate-hemisphere interface, d refers to the diameter of the contact area between hemispherical structure and substrate, s represents the space between two adjoining hemispheres, h denotes the vertical height from the top of hemisphere to substrate surface, and 70°?a?90°, 900 ?m?d ?1700 ?m, s?550 ?m, 600 ?m?h?1100 ?m, respectively. The superhydrophobic hemispherical array has a water contact angle larger than 150° and roll-off angle lower than 10°.

Abstract: A thermal extrusion method to fabricate large-dimension superhydrophobic cylinder pillar arrays with droplet pancake bouncing phenomenon. Preparing thermal extrusion mold: the through-hole arrays with 0.8˜1.25 mm diameter, 0.25 mm interval space and 0.6˜1.0 mm height are first obtained on metals, and are then polished, rinsed and dried. Thermal extrusion: polymer materials are first thermally extruded on the obtained mold and cooled to room temperature. Demold: excess polymer materials flowing from the through hole are cut off and then the polymer cylinder pillar arrays are lifted off from the mold. Superhydrophobic treatment: the whole polymer sample is treated using mixed liquid spray consisting of titanium oxide nanoparticles dispersed in fluoroalkylsilane ethanol solution, and the superhydrophobic cylinder pillar arrays are obtained.

Abstract: A superhydrophobic hemispherical array which can realize droplet pancake bouncing phenomenon is provided. The superhydrophobic hemispherical array shows an arc-shape structure which is narrow at the top and wide at the bottom, where a is the angle that substrate-gas interface goes across the gas and reaches substrate-hemisphere interface, d refers to the diameter of the contact area between hemispherical structure and substrate, s represents the space between two adjoining hemispheres, h denotes the vertical height from the top of hemisphere to substrate surface, and 70°?a?90°, 900 ?m?d ?1700 ?m, s?550 ?m, 600 ?m?h?1100 ?m, respectively. The superhydrophobic hemispherical array has a water contact angle larger than 150° and roll-off angle lower than 10°.

Abstract: Techniques for generating a prediction for a location of a mobile device includes a network controller obtaining signal strength information and angle-of-arrival information for mobile devices from a plurality of access points disposed at a location that includes two or more zones. The network controller extracts features from the obtained information. The features indicate whether the mobile devices are more likely in a first zone than in one or more of second zones of the two or more zones. The network controller generates a software model for classifying a mobile device into one of the two or more zones by applying a computer learning process to the extracted features. The network controller uses the software model to generate a prediction indicating that a first mobile device is in one of the two or more zones, and performs an action at the location based on the prediction.

Abstract: A thermal extrusion method to fabricate large-dimension superhydrophobic cylinder pillar arrays with droplet pancake bouncing phenomenon. Preparing thermal extrusion mold: the through-hole arrays with 0.8˜1.25 mm diameter, 0.25 mm interval space and 0.6˜1.0 mm height are first obtained on metals, and are then polished, rinsed and dried. Thermal extrusion: polymer materials are first thermally extruded on the obtained mold and cooled to room temperature. Demold: excess polymer materials flowing from the through hole are cut off and then the polymer cylinder pillar arrays are lifted off from the mold. Superhydrophobic treatment: the whole polymer sample is treated using mixed liquid spray consisting of titanium oxide nanoparticles dispersed in fluoroalkylsilane ethanol solution, and the superhydrophobic cylinder pillar arrays are obtained.

Abstract: A computer-implemented method is provided for a management entity to detect where a rogue access point is connected to the network infrastructure. The management entity receives from a wireless network controller an indication of an unauthorized frame wirelessly intercepted by an authorized access point. The unauthorized frame carries data between a rogue access point and a wireless client device. The rogue access point is connected to a compromised network element in a managed network at a compromised port of the compromised network element. The management entity extracts a client network address and a gateway network address from the indication of the unauthorized frame. The management entity traces a path through the managed network from a gateway network element associated with the gateway network address to the compromised network element. The management entity determines the compromised port in the compromised network element at which the rogue access point is connected.

Abstract: According to various embodiments, a viewing event may be detected, the viewing event corresponding to a user viewing a content item. A view reason associated with the viewing event may be determined, the view reason indicating how the user was notified of the content item or how the user accessed the content item. A privacy value associated with the viewing event may be determined, the privacy value indicating an inferred sensitivity of the user to publication of the viewing event. Further, metadata describing the viewing event may be generated. Moreover, the metadata may be associated with the content item.

Abstract: A computer-implemented method is provided for a management entity to detect where a rogue access point is connected to the network infrastructure. The management entity receives from a wireless network controller an indication of an unauthorized frame wirelessly intercepted by an authorized access point. The unauthorized frame carries data between a rogue access point and a wireless client device. The rogue access point is connected to a compromised network element in a managed network at a compromised port of the compromised network element. The management entity extracts a client network address and a gateway network address from the indication of the unauthorized frame. The management entity traces a path through the managed network from a gateway network element associated with the gateway network address to the compromised network element. The management entity determines the compromised port in the compromised network element at which the rogue access point is connected.

Abstract: According to various embodiments, a viewing event may be detected, the viewing event corresponding to a user viewing a content item. A view reason associated with the viewing event may be determined, the view reason indicating how the user was notified of the content item or how the user accessed the content item. A privacy value associated with the viewing event may be determined, the privacy value indicating an inferred sensitivity of the user to publication of the viewing event. Further, metadata describing the viewing event may be generated. Moreover, the metadata may be associated with the content item.

Abstract: A semiconductor chip includes a substrate and a semiconductor layer positioned above the substrate. A hybrid through-silicon via (“TSV”) extends continuously through at least the semiconductor layer and the substrate and includes a first TSV portion and a second TSV portion. A lower portion of the first TSV portion is positioned in the substrate and has a lower surface adjacent to a back side of the substrate and an upper surface below the semiconductor layer. Upper sidewall portions of the first TSV portion extend from the upper surface through at least the semiconductor layer. A depth of the lower portion is greater than a thickness of the upper sidewall portions. The second TSV portion is conductively coupled to the first TSV portion, is laterally surrounded by the upper sidewall portions, and extends continuously from the upper surface through at least the semiconductor layer.

Abstract: According to various embodiments, a viewing event may be detected, the viewing event corresponding to a user viewing a content item. A view reason associated with the viewing event may be determined, the view reason indicating how the user was notified of the content item or how the user accessed the content item. A privacy value associated with the viewing event may be determined, the privacy value indicating an inferred sensitivity of the user to publication of the viewing event. Further, metadata describing the viewing event may be generated. Moreover, the metadata may be associated with the content item.

Abstract: A semiconductor chip includes a substrate and a semiconductor layer positioned above the substrate. A hybrid through-silicon via (“TSV”) extends continuously through at least the semiconductor layer and the substrate and includes a first TSV portion and a second TSV portion. A bottom plug portion of the first TSV portion is positioned in the substrate and has a lower surface adjacent to a back side of the substrate and an upper surface below the semiconductor layer. Upper sidewall portions of the first TSV portion extend from the upper surface through at least the semiconductor layer. A depth of the bottom plug portion is greater than a thickness of the upper sidewall portions. The second TSV portion is conductively coupled to the first TSV portion, is laterally surrounded by the upper sidewall portions, and extends continuously from the upper surface through at least the semiconductor layer.

Abstract: Generally, the subject matter disclosed herein relates to conductive via elements, such as through-silicon vias (TSV's), and methods for forming the same. One illustrative method of forming a conductive via element disclosed herein includes forming a via opening in a substrate, the via opening extending through an interlayer dielectric layer formed above the substrate and a device layer formed below the interlayer dielectric layer, and extending into the substrate. The method also includes forming a first portion of the conductive via element comprising a first conductive contact material in a bottom portion of the via opening, and forming a second portion of the conductive via element comprising a second conductive contact material different from the first conductive contact material in an upper portion of the via opening and above the first portion.

Abstract: Embodiments described herein provide approaches for interconnect formation in a semiconductor device using a sidewall mask layer. Specifically, a sidewall mask layer is deposited on a hard mask in a merged via region of the semiconductor device following removal of a planarization layer previously formed on the hard mask. The sidewall mask layer is conformally deposited on the hard mask, and acts like a sacrificial layer to protect the hard mask during a subsequent via etch. This reduces the via critical dimension (CD) and reduces the CD elongation along the hard mask line direction during the via etch.

Abstract: According to various embodiments, a viewing event may be detected, the viewing event corresponding to a user viewing a content item. A view reason associated with the viewing event may be determined, the view reason indicating how the user was notified of the content item or how the user accessed the content item. A privacy value associated with the viewing event may be determined, the privacy value indicating an inferred sensitivity of the user to publication of the viewing event. Further, metadata describing the viewing event may be generated. Moreover, the metadata may be associated with the content item.

Abstract: Techniques for facilitating the promotion of content are described. Consistent with some embodiments, a content promotion interface is presented with a content item, enabling a user to promote the content item. By promoting the content item, the user can influence one or more algorithms used in selecting and presenting content items to other users, such that the promoted content item is provided preferential processing and may be selected for presentation in situations where it may otherwise not be (e.g., if not promoted), and the promoted content item may be presented in a manner designed to garner more collective user-attention than the content item would otherwise receive, if presented in a conventional manner (e.g., without having been promoted).

Abstract: Embodiments described herein provide approaches for interconnect formation in a semiconductor device using a sidewall mask layer. Specifically, a sidewall mask layer is deposited on a hard mask in a merged via region of the semiconductor device following removal of a planarization layer previously formed on the hard mask. The sidewall mask layer is conformally deposited on the hard mask, and acts like a sacrificial layer to protect the hard mask during a subsequent via etch. This reduces the via critical dimension (CD) and reduces the CD elongation along the hard mask line direction during the via etch.

Abstract: A credit mechanism or system for use with a network-based application is described. The credit mechanism operates in conjunction with the network-based application to require that users pay a number of credits to interact with other users. The number of credits required to interact with a particular user may be determined using an algorithm that takes as input a number of signals that are inferred from observed data and which generally represent a measure of the particular user's willingness to provide time and attention (e.g., supply of attention), and a measure of the desire of other users to obtain the particular user's attention (e.g., demand for attention).