Abstract: A method of manufacturing a lead assembly of a cryogenic system is provided. The method includes developing a three-dimensional (3D) model of a heat exchanger. The heat exchanger includes a plurality of channels extending longitudinally through the heat exchanger from the first end to the second end, the plurality of channels forming a plurality of thermal surfaces within the heat exchanger, the heat exchanger having a transverse cross section. The method further includes modifying the 3D model by at least one of reducing an area of the cross section and increasing the plurality of thermal surfaces. The method also includes additively manufacturing the heat exchanger using an electrically-conductive and thermally-conductive material according to the modified 3D model. Further, the method includes providing a high temperature superconductor (HTS) assembly that includes an HTS strip, and connecting the HTS assembly to the heat exchanger at the second end of the heat exchanger.

Abstract: A method for processing breast tissue image data includes processing the image data to generate a set of image slices collectively depicting the patient's breast; for each image slice, applying one or more filters associated with a plurality of multi-level feature modules, each configured to represent and recognize an assigned characteristic or feature of a high-dimensional object; generating at each multi-level feature module a feature map depicting regions of the image slice having the assigned feature; combining the feature maps generated from the plurality of multi-level feature modules into a combined image object map indicating a probability that the high-dimensional object is present at a particular location of the image slice; and creating a 2D synthesized image identifying one or more high-dimensional objects based at least in part on object maps generated for a plurality of image slices.

Abstract: Disclosed is a microwave chemical method for totally extracting fluorine and rare earth from bastnaesite concentrate, including: alkaline conversion defluorination of bastnaesite through microwave irradiation, microwave-assisted leaching of fluorine, solid-liquid separation of leaching solution and microwave-assisted leaching of rare earth. The rare earth hydrochloric acid solution for leaching contains no fluorine ion, so that the fluorine interference of subsequent processes such as impurity removal can be completely avoided; the fluorine and the rare earth are leached with microwaves, which does not need the stirring, so that the automatic control is easy to implement; the fluorine and rare earth leaching speed is high, the leaching time is short and the complete leaching of fluorine and little residual alkali in the slag can be realized by two-time leaching; and no fluorine-containing waste water is discharged, and the total extraction of the rare earth can be realized by one-time leaching.

Abstract: A light emitting device includes: a first substrate; a light emitting structure layer located on the first substrate; and an insertion layer located on the light emitting structure layer, a surface, away from the light emitting structure layer, of the insertion layer is a roughened surface, and the insertion layer has a protective effect on the light emitting structure layer. In the light emitting device provided by the present disclosure, the surface, away from the light emitting structure layer, of the insertion layer is the roughened surface, and the insertion layer has the protective effect on the light emitting structure layer during a peeling off process, which solves problems of reduced yield and reduced light extraction efficiency of a light emitting device.

Abstract: A system and method for preparing epoxy chloropropane is provided in that by coupling three stages of high gravity reactors, the product epoxy chloropropane and water vapor are distilled from a reaction system in form of an azeotrope by adopting a water vapor steam stripping method. Further, by combining the azeotrope with the multiples stages of high gravity reactors, the gas phase mass transfer and the liquid phase mass transfer of the azeotrope are improved aiming at the features of the azeotrope in the reaction system, thus making the overall conversion rate higher. In addition, by combining steam stripping and high gravity, dichloropropanol and alkali solution are rapidly mixed for mass transfer, and the product epoxy chloropropane is rapidly distilled from the reaction system in the form of the azeotrope, such that the reaction proceeds continuously towards the direction of producing epoxy chloropropane, thus significantly improving the conversion rate.

Abstract: Disclosed are a semiconductor structure and a method for manufacturing a semiconductor structure, the method includes: forming a first transition layer, a protection layer and an active structure layer sequentially epitaxially on a side of a growth substrate, where a surface, away from the growth substrate, of the first transition layer is a two-dimensional flat surface; on a first plane, an orthographic projection of the active structure layer is at least partially covered by an orthographic projection of the protection layer, and the first plane is perpendicular to an arrangement direction of the protection layer and the active structure layer; detaching the growth substrate by a laser lift-off process, to make the epitaxial layer transferred to a transfer substrate; etching the first transition layer up to the protection layer, to make a surface, away from the active structure layer, of the protection layer to be a planarization surface.

Abstract: This application discloses network congestion control methods and apparatuses. In an implementation, a method comprises: obtaining, by the an intelligent network interface card comprised in a network congestion control apparatus, at least two types of traffic. Identifying, by the intelligent network interface card, algorithm matching features of the at least two types of traffic, and in response to determining to perform congestion control on one type of traffic of the at least two types of traffic, determining, by the intelligent network interface card, a congestion control algorithm that matches an algorithm matching feature of the one type of traffic. Performing, by the intelligent network interface card, congestion control on the one type of traffic according to the congestion control algorithm that matches the algorithm matching feature of the one type of traffic.

Abstract: Disclosed is a semiconductor structure, including a substrate; a V-shaped groove layer, a V-shaped groove enlargement layer and a semiconductor epitaxial layer stacked from bottom to top; a first V-shaped groove arranged on a surface of the V-shaped groove layer close to the V-shaped groove enlargement layer; a second V-shaped groove arranged on a surface of the V-shaped groove enlargement layer close to the semiconductor epitaxial layer, where a size of the second V-shaped groove is greater than a size of the first V-shaped groove In the present disclosure, a lateral epitaxy effect of the V-shaped groove enlargement layer and the semiconductor epitaxial layer is realized for two times, which makes dislocation fully bend, effectively improving crystal quality. Meanwhile, the first V-shaped groove and the second V-shaped groove are self-formed during an epitaxial growth process, which greatly reduces preparation cost and improves preparation efficiency.

Abstract: A multiphase converter for reducing the input and output current ripples. The multiphase converter includes a system controller and power devices. Furthermore, the multiphase converter includes an active gate driver integrated circuit (IC) electrically connected to the system controller and the power devices. The active gate driver IC receives signals from the system controller and provides outputs to the power devices based, at least in part, on real-time feedback from the power devices.

Abstract: Provided are compositions comprising polynucleotides encoding Rps genes, and soybean plants or soybean seeds comprising the compositions and exhibiting resistance to Phytophthora. Additionally, various methods for employing the polynucleotides to increase resistance to Phytophthora are also provided herein.

Abstract: System and method for robust sensorless control of permanent magnet assisted synchronous reluctance (PM-SyR) motor. The system and method includes startup control of a motor with known rotor position/speed, but unknown rotor magnetic polarity of a motor exhibiting rotor magnetic anisotropy or saliency. The system and method includes a rotor characteristic detection method for a PM-SyR motor that detects rotor magnetic polarity based on the variation of the inductance that is caused by the leakage flux paths in the rotor barrier bridges and utilizes the detected rotor magnetic polarity for improved motor startup.

Abstract: The present application provides a continuous preparation system and method for vinylidene chloride. In the present application, by coupling two stages of high gravity reactors, the product vinylidene chloride and water vapor are distilled from a reaction system in form of an azeotrope by adopting a water vapor steam stripping method, and the product obtained using the method has high purity. In addition, by combining steam stripping and high gravity, trichloroethane and alkali solution are rapidly mixed for mass transfer, and the product vinylidene chloride is rapidly distilled from the reaction system in form of the azeotrope (based on rapid diffusion of water vapor), such that the reaction proceeds continuously towards the direction of producing vinylidene chloride, thus significantly improving the conversion rate.

Abstract: A laminated core includes a case, a laminated core, and a cap assembly. The laminated core includes multiple electrode clusters. Each electrode cluster includes multiple laminated electrodes and multiple tabs. Each tab extends out of a corresponding one of the electrodes. The multiple tabs of each electrode clusters form a tab bundle, and the tab bundle is connected to one pin. The cap assembly includes a connection portion and a pole, the pin is slidably connected to the connection portion, and electrically connected to the pole through the connection portion.

Abstract: A composite substrate, a photoelectric device and a preparation method therefor. The composite substrate comprises a base substrate and a nano-diamond structure located on the base substrate; the nano-diamond structure comprises a plurality of nano-diamond protrusions arranged at intervals, and a gap is provided between two adjacent nano-diamond protrusions. The photoelectric device comprises the composite substrate, and further comprises a first semiconductor layer, an active layer, and a second semiconductor layer stacked on the composite substrate; the first semiconductor layer comprises protruding portions and a flat portion sequentially stacked in the vertical direction, the protruding portions are in the gaps and correspond one-to-one to the gaps, and the flat portion is located on the protruding portions and the nano-diamond structure. The preparation method for the photoelectric device is used for manufacturing the photoelectric device.

Abstract: A reaction apparatus used for a continuous reaction process for the preparation of trifluoroethane includes a housing, a rotary cutting component, a submersible pump and a flow deflector. The flow deflector includes two sets of flow-deflecting plates, each set of said flow-deflecting plates including a plurality of flow-deflecting plates. Two sets of flow-deflecting plates are fixed to each of the two opposing side walls, and the two adjacent flow-deflecting plates are in offset alignment. The submersible pump is arranged inside the reaction chamber body. A liquid inlet line can connect a directly to the submersible pump without requiring the arrangement of an additional pipeline.

Abstract: Disclosed are a micro light-emitting diode chip, a manufacturing method therefor, and an electronic device. The micro light-emitting diode chip includes: a substrate; a plurality of light-emitting units, where a light-emitting unit is located on a side of the substrate, the light-emitting unit includes a first semiconductor layer, an active layer and a second semiconductor layer stacked in sequence, the first semiconductor layer is located on a side, away from the substrate, of the second semiconductor layer, and the light-emitting unit further includes a reflective sidewall, which constitutes a sidewall of the active layer, the second semiconductor layer and at least a part of the first semiconductor layer; and a blocking portion, where at least a part of the blocking portion is located between first semiconductor layers of two of the light-emitting units.

Abstract: Disclosed are a light-emitting chip, a manufacturing method thereof and an electronic device. The light-emitting chip includes a first substrate; and at least one reflector and a light-emitting pixel layer sequentially located on the first substrate. The light-emitting pixel layer includes at least one light-emitting pixel. The reflector is arranged corresponding to the light-emitting pixel. A first surface, close to the light-emitting pixel, of the reflector is a bowl-shaped surface. The bowl-shaped surface is concave in a direction close to the first substrate. The reflector is configured to reflect light emitted by a corresponding light-emitting pixel and adjust an emission direction and/or an emission angle of the light, so that the light exit rate of the light-emitting chip can be improved, and the light-emitting brightness of the light-emitting chip and electronic device can be further improved.

Abstract: A semiconductor structure includes: a stacked structure, including one stacked structure unit or a plurality of stacked structure units disposed along a horizontal direction, where each of the stacked structure units includes a plurality of stacked island structures separated from each other along the horizontal direction; and an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer sequentially laminated on the stacked structure. In the present disclosure, by providing the stacked structure, the light-emitting efficiency of the semiconductor device can be improved.