Abstract: Disclosed are a micro light-emitting diode chip, a manufacturing method therefor, and an electronic device. The micro light-emitting diode chip includes: a substrate; a plurality of light-emitting units, where a light-emitting unit is located on a side of the substrate, the light-emitting unit includes a first semiconductor layer, an active layer and a second semiconductor layer stacked in sequence, the first semiconductor layer is located on a side, away from the substrate, of the second semiconductor layer, and the light-emitting unit further includes a reflective sidewall, which constitutes a sidewall of the active layer, the second semiconductor layer and at least a part of the first semiconductor layer; and a blocking portion, where at least a part of the blocking portion is located between first semiconductor layers of two of the light-emitting units.

Abstract: Disclosed are a light-emitting chip, a manufacturing method thereof and an electronic device. The light-emitting chip includes a first substrate; and at least one reflector and a light-emitting pixel layer sequentially located on the first substrate. The light-emitting pixel layer includes at least one light-emitting pixel. The reflector is arranged corresponding to the light-emitting pixel. A first surface, close to the light-emitting pixel, of the reflector is a bowl-shaped surface. The bowl-shaped surface is concave in a direction close to the first substrate. The reflector is configured to reflect light emitted by a corresponding light-emitting pixel and adjust an emission direction and/or an emission angle of the light, so that the light exit rate of the light-emitting chip can be improved, and the light-emitting brightness of the light-emitting chip and electronic device can be further improved.

Abstract: A semiconductor structure includes: a stacked structure, including one stacked structure unit or a plurality of stacked structure units disposed along a horizontal direction, where each of the stacked structure units includes a plurality of stacked island structures separated from each other along the horizontal direction; and an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer sequentially laminated on the stacked structure. In the present disclosure, by providing the stacked structure, the light-emitting efficiency of the semiconductor device can be improved.

Abstract: The invention includes a method including the steps of obtaining a plurality of images, each of the images in the plurality having at least one corresponding region, generating a merged image, the merged image also having the corresponding region. The step of generating includes selecting an image source from the plurality of images to source image data for the corresponding region in the merged image by comparing attributes of the corresponding regions of the plurality of images to identify the image source having preferred attributes.

Abstract: Disclosed is a preparation method of a PTFE dispersion resin with a core-shell structure, including: adding a fluorine-containing hydrocarbon and a fluorine-containing modifying monomer as nucleating agents in an initial nucleating stage of polymerization, adding a small amount of a non-PFOA surfactant to regulate a particle core structure, and adding the same or different non-PFOA surfactant during a growth stage to stabilize a dispersion. The method can avoid the use of PFOA surfactants, consume less surfactants and achieve good emulsion stability. The PTFE dispersion resin thus prepared has a core-shell multilayer structure, low extrusion pressure, good thermal stability, and excellent mechanical properties, and is especially suitable for the preparation of small-diameter tubes by high-compression-ratio paste extrusion.

Abstract: The present application provides a semiconductor structure and a manufacturing method therefor, and a light-emitting device and a manufacturing method therefor. The semiconductor structure includes a substrate, a first semiconductor layer, an isolation layer, an active layer, a second semiconductor layer, a first electrode and a second electrode. The second semiconductor layer is a conductive DBR structure. The first semiconductor layer includes a flat portion, a first protrusion and a second protrusion stacked sequentially in a vertical direction, the second protrusions correspond one-to-one to the first through-holes, and the second protrusions are arranged at intervals, and the side surface of the second protrusions are beveled. The active layer, the second semiconductor layer, and the first electrode are provided on the second protrusions of the first semiconductor layer stacked in sequence.

Abstract: The present disclosure provides a full-color LED structure, a full-color LED structure unit, and a method for manufacturing the same. Different wavelengths of light emitted from the first sub-region, the second sub-region and the third sub-region of the light-emitting layer are achieved by controlling different surface dimensions of the bottom wall and the side wall of the first trench or the top wall of the first semiconductor layer. The above process is simple and can form full-color LED structure units during a single epitaxial growth process of the light-emitting layer, such that the size of the full-color LED is reduced, the cost is reduced, the service life is extended, and the reliability is improved.

Abstract: The disclosure provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a first group III nitride epitaxial layer disposed on a support substrate, a silicon substrate, a bonding layer and a second group III nitride epitaxial layer; wherein the first group III nitride epitaxial layer is bonded to the silicon substrate by the bonding layer; through-silicon-vias are formed in the silicon substrate, and first through-holes are formed in the bonding layer, wherein the through-silicon-vias communicate with the first through-holes; and the second group III nitride epitaxial layer is disposed within the first through-holes and the through-silicon-vias and on the silicon substrate, wherein the second group III nitride epitaxial layer is coupled to the first group III nitride epitaxial layer.

Abstract: Disclosed are a light emitting device and a method for manufacturing a light emitting device. The light emitting device according to the present application may be formed by an epitaxial growth process. In addition, the light emitting device according to the present application includes a first semiconductor layer, a light emitting layer and a second semiconductor layer. Light emitting wavelengths of the first region, the second region and the third region are different by setting composition of the light emitting layer of the top walls of the plurality of protrusions, the side walls of the plurality of protrusions and the recessed region between the plurality of protrusions to be different, therefore, the light-emitting device may emit light of different wavelengths without using phosphors or quantum dots for wavelength conversion, thereby prolonging the lifespan of the light-emitting device and improving the reliability of the light-emitting device.

Abstract: A method for treating retained plutonium in a waste organic phase of a plutonium uranium reduction extraction (PUREX) process is provided. The waste organic phase of the PUREX process contains an organic solvent and plutonium, and the method includes contacting the waste organic phase of the PUREX process with an aqueous back extraction solution containing 2,6-pyridinedicarboxylic acid for back extraction to obtain a plutonium back extraction product; and the plutonium in the back extraction solution may be loaded onto the column for adsorption, transformation and desorption by an anion exchange column, ultimately recovering plutonium in the back extraction solution.

Abstract: A semiconductor light-emitting device and a manufacturing method for same. The manufacturing method for the semiconductor light-emitting device comprises: forming a dielectric layer on a substrate, the dielectric layer being provided with a plurality of openings exposing the substrate; performing epitaxial growth on the substrate using the dielectric layer as a mask to form first reflectors in the openings of the dielectric layer; growing a light-emitting structure on the side of each first reflector away from the substrate; and forming a second reflector on the side of the light-emitting structure away from the first reflector. The manufacturing process can be simplified.

Abstract: The present disclosure discloses an engineering machinery equipment, and a method, system, and storage medium for safety control thereof, and relates to the field of artificial intelligence, automatic control, and engineering machinery technologies. A method can include: acquiring spatial sensing data of a work area; performing obstacle detection based on the spatial sensing data to determine a position of an obstacle within the work area; determining a safe working range of a mechanical structural component of the engineering machinery equipment based on the position of the obstacle within the work area; and controlling a working range of the mechanical structural component of the engineering machinery equipment based on the safe working range.

Abstract: Semiconductor structures and manufacturing methods thereof. A semiconductor structure includes: a first epitaxial layer; a bonding layer, on first epitaxial layer and provided with a first through-hole exposing first epitaxial layer; a silicon substrate, on a side of bonding layer away from first epitaxial layer, first epitaxial layer and the silicon substrate being bonded through the bonding layer; a through-silicon-via, in silicon substrate, through-silicon-via communicating with first through-hole; a second epitaxial layer, on first epitaxial layer exposed by first through-hole; a first electrode, on a side of first epitaxial layer away from bonding layer, and electrically coupled with first epitaxial layer; a second electrode, on a side of second epitaxial layer away from first epitaxial layer, and electrically coupled with second epitaxial layer.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure may include: a first epitaxial layer disposed on a substrate; a bonding layer disposed on the first epitaxial layer (where the bonding layer is provided with a first through-hole to expose the first epitaxial layer); a silicon substrate disposed on a side of the bonding layer away from the first epitaxial layer (where the first epitaxial layer is bonded to the silicon substrate by the bonding layer, the silicon substrate is provided with a through-silicon-via, and the through-silicon-via communicates with the first through-hole); a silicon device disposed on the silicon substrate; and a second epitaxial layer disposed on the first epitaxial layer exposed by the first through-hole. The present disclosure can improve the quality of the second epitaxial layer, and realize the integration of a silicon device and a III-V semiconductor device.

Abstract: This application provides a port configuration method and a communications device. The method includes: obtaining, by a first communications device, an identifier of a second port group of a second communications device, where the identifier of the second port group is used to indicate configuration information of a first port of the first communications device, and establishing, by the first communications device, a connection to a second port in the second port group by using the first port, where the first port is any port of the first communications device, the second port is any port in the second port group, and the configuration information includes an internet protocol IP address; determining, by the first communications device, the configuration information of the first port based on the identifier of the second port group; and configuring, by the first communications device, the configuration information for the first port.

Abstract: Related is an electric oil pump, and the electric oil pump includes a pump housing having an inner pump cavity, where the inner pump cavity includes a first cavity and a second cavity; a first rotor assembly disposed in the first cavity; a stator assembly and a second rotor assembly that are disposed in the second cavity; an electric control board; a supporting member at least partially disposed between the stator assembly and the electric control board; and a connecting terminal. The electric oil pump can reduce deformation of the connecting terminal when the connecting terminal is respectively connected to the stator assembly and the electric control board.

Abstract: The present disclosure discloses a method for accurately separating and identifying an oxidized triglyceride in frying oil, and belongs to the technical field of detection. In the present disclosure, the structure of the oxidized triglyceride (ox-TG) in the frying oil is identified by mass spectrometry first. It is found that after frying is conducted for 24 h, the ox-TG mainly includes epoxy ox-TG, hydroxyl ox-TG, and aldehyde ox-TG. Thus, the three types of ox-TG are selected as a template molecule to synthesize a surface molecularly imprinted polymer (SMIPs). Then, a polymer completely matched with the ox-TG template molecule in action site and spatial configuration is synthesized, and the specific ox-TG can be separated by using the SMIPs. According to the present disclosure, OXTG-SMIPs prepared by a molecular imprinting technology has good specificity, stability, and affinity, and accurate separation of the ox-TG in the frying oil can be achieved.

Abstract: A method includes receiving a current spectrogram frame and reconstructing a phase of the current spectrogram frame by, for each corresponding committed spectrogram frame in a sequence of M number of committed spectrogram frames preceding the current spectrogram frame, obtaining a value of a committed phase of the corresponding committed spectrogram frame and estimating the phase of the current spectrogram frame based on a magnitude of the current spectrogram frame and the value of the committed phase of each corresponding committed spectrogram frame in the sequence of M number of committed spectrogram frames preceding the current spectrogram frame. The method also includes synthesizing, for the current spectrogram frame, a new time-domain audio waveform frame based on the estimated phase of the current spectrogram frame.

Abstract: The present disclosure discloses an aquatic-plant protein combined restructured meat and a preparation method thereof, and belongs to the technical field of processing of foods. According to the present disclosure, a protein combined restructuring processing technology can be summarized as including pretreatment of an aquatic-plant protein, combined restructuring, high-temperature qualitative treatment, and integrated forming. The whole process is green, safe, and environmentally friendly. The protein combined restructured meat prepared contains two proteins including an animal protein and a plant protein, and has a protein content of greater than 20%. While the demands for nutritional dietary proteins are met, the chewability is greater than 1,500 g·mm, and the viscoelasticity is excellent. The meat can be processed in various shapes according to needs, directly heated for eating, or processed into a prepared food, a semi-finished product and the like, so that the product has a large application space.