Abstract: Aspects of the disclosure are directed to providing a single data rate (SDR) mode or a double data rate (DDR) mode to a Registering Clock Drive (RCD) for a memory. Accordingly, the apparatus and method may include determining data rate mode selection criteria; selecting a data rate mode based on the data rate mode selection criteria; configuring a host interface for the data rate mode; and configuring an RCD input interface for the data rate mode. In one aspect, the apparatus and method further include activating a clock signal on the host interface and on the RCD input interface; transferring data from the host interface to the RCD input interface using the clock signal; and transferring the data from an RCD output interface using the clock signal in either 1N mode or 2N mode. And, the data rate mode is one of the SDR mode or the DDR mode.

Abstract: Providing extended dynamic random access memory (DRAM) burst lengths in processor-based systems is disclosed. In one aspect, a processor-based system includes a DRAM circuit (e.g., disposed on a common x4/x8 die) providing 4-bit-wide data access (“x4”) and a 128-bit internal data prefetch. When operated in a x4 mode, the DRAM circuit is configured to provide an extended DRAM burst length of 32 bits (“BL32”). The DRAM circuit receives a memory read request from a memory controller communicatively coupled to the DRAM circuit, prefetches 128 bits of data, and returns all of the 128 bits of fetched data to the memory controller in response to the memory read request. In some aspects, the DRAM circuit may also receive a memory write command including 128 bits of write data from the memory controller, and write the 128 bits of write data to memory without performing a read/modify/write (RMW) operation.

Abstract: According to various aspects, a memory controller may schedule ZQ commands to periodically calibrate individual memory ranks in a multi-rank memory. The memory controller may schedule a ZQ short command at each ZQ interval and record that the ZQ short command was missed with respect to a memory rank in a self-refresh mode at the ZQ interval. After the missed ZQ short commands reaches a first threshold, a ZQ long command may be scheduled at the next ZQ interval and normal ZQ behavior may resume in the event that the memory rank exits the self-refresh mode and the ZQ long command is executed. However, if the memory rank stays in the self-refresh mode until missed ZQ long commands reaches a second threshold, the memory controller may trigger a ZQ long command once the memory rank exits the self-refresh mode and skip a next ZQ calibration before resuming normal ZQ behavior.

Abstract: A memory device comprises a memory array, at least one row address buffer, a set of row data buffers, a row decoder, an array of sense amplifiers, and a demultiplexer. The memory array comprises data elements organized into rows and columns. Each of the rows is addressable by a row address. Each of the data elements in each of the rows is addressable by a column address. The at least one row address buffer holds a selected row address of a set of successive selected row addresses. The set of row data buffers holds respective contents of selected rows that correspond to the set of successive selected row addresses. The row decoder decodes the selected row address to access a selected row. The array of sense amplifier reads the selected row and transmits content of the selected row to one of the row data buffers through the demultiplexer, and writes the content of the selected row back to the selected row.

Abstract: A memory device comprises a memory array, at least one row address buffer, a set of row data buffers, a row decoder, an array of sense amplifiers, and a demultiplexer. The memory array comprises data elements organized into rows and columns. Each of the rows is addressable by a row address. Each of the data elements in each of the rows is addressable by a column address. The at least one row address buffer holds a selected row address of a set of successive selected row addresses. The set of row data buffers holds respective contents of selected rows that correspond to the set of successive selected row addresses. The row decoder decodes the selected row address to access a selected row. The array of sense amplifier reads the selected row and transmits content of the selected row to one of the row data buffers through the demultiplexer, and writes the content of the selected row back to the selected row.

Abstract: A memory device comprises a memory array, at least one row address buffer, a set of row data buffers, a row decoder, an array of sense amplifiers, and a demultiplexer. The memory array comprises data elements organized into rows and columns. Each of the rows is addressable by a row address. Each of the data elements in each of the rows is addressable by a column address. The at least one row address buffer holds a selected row address of a set of successive selected row addresses. The set of row data buffers holds respective contents of selected rows that correspond to the set of successive selected row addresses. The row decoder decodes the selected row address to access a selected row. The array of sense amplifier reads the selected row and transmits content of the selected row to one of the row data buffers through the demultiplexer, and writes the content of the selected row back to the selected row.

Abstract: A memory device comprises a memory array, at least one row address buffer, a set of row data buffers, a row decoder, an array of sense amplifiers, and a demultiplexer. The memory array comprises data elements organized into rows and columns. Each of the rows is addressable by a row address. Each of the data elements in each of the rows is addressable by a column address. The at least one row address buffer holds a selected row address of a set of successive selected row addresses. The set of row data buffers holds respective contents of selected rows that correspond to the set of successive selected row addresses. The row decoder decodes the selected row address to access a selected row. The array of sense amplifier reads the selected row and transmits content of the selected row to one of the row data buffers through the demultiplexer, and writes the content of the selected row back to the selected row.

Abstract: A system for processing errors in a processor comprising, a first register having a unique identifier operative to store a first error data, a processor operative to retrieve the first error data from the first register, associate the first error data with the unique identifier, and generate a first uniform error packet including the first error data and the unique identifier and a storage medium operative to store the first uniform error packet.

Abstract: A method of regulating power for multi-node computer system components has a closed-ring path that links all the power governors and circulating in the ring is a system power number that represents the power consumption of the entire system. Meanwhile, all the governors keep counting its local power consumption. Each time the number passes a governor, the governor will add its local count onto this number, store this number for future usage, and reset its local count. When the new number returns back to the same power governor, the governor will subtract the new number with its stored number to calculate the overall system power usage within a number circulation period. The system power number overflow problem is also detected with a counter if the incoming number is smaller then the number previously stored. The counter whose counting capacity is greater than the maximum system power usage on all the nodes within a number circulation period.

Abstract: A method for regulating system power using a power governor for DRAM in a multi-node computer system regulating memory power consumption of an entire computer system employs a closed ring that connects all the power governors within the system to enable them to work in concert so that each of the power governors has the knowledge of memory activities within the entire system. They then control and limit the memory usage based on a true overall measurement instead of just local measurement. Each nodal power governor has memory command counter, ring number receiver, ring number transmitter, governor activation controller, and memory traffic controller. Each nodal power governor counts the weight of memory command. The degree of limiting actual memory activities can be programmed when the governor is active. Besides, the command priorities can be adjusted in activation too. A hybrid ring structure can be employed with a nodal power structure to achieve the fastest number circulation speed economically.

Abstract: Storage protection keys and system data share the same physical storage. The key region is dynamically relocatable by firmware. A Configuration Array is used to map the absolute address of the key region in to its physical address. The absolute address of keys can be fixed even though the physical location of the keys is relocated into a different region. A triple-detect double correct ECC scheme is used to protect keys. The ECC scheme is different from regular data in the storage and can be used to detect illegal access. Extra firmware and hardware is also designed to restrain customer's applications from directly accessing keys. With the key region being relocatable, the firmware could move the key region away from a known faulty area in a memory to improve system RAS. We also achieved the commonality objective that key memory device can use the same memory devices with other server systems that do not use keys.

Abstract: A DDR SDRAM DIMM for a mainframe main storage subsystem has a plurality of DDR SDRAMs on a rectangular printed circuit board having a first side and a second side, a length (152 MM=6 inch) between 149 and 153 millimeters and optimized at 149.15 mm or 151.35 mm in length and first and second ends having a width smaller than the length; a first plurality of connector locations on the first side extending along a first edge of the board that extends the length of the board, a second plurality of connector locations of the second side extending on the first edge of the board, a locating key having its center positioned on the first edge and located between 80 mm and 86 mm and optimized with a locating key 1.5 mm wide centered at 81.58 or 85.67 mm from the first end of the board and located between 64 and 70 mm and optimized with the locating key centered at 67.58 or 65.675 from the second end of the board.

Abstract: A system for processing errors in a processor comprising, a first register having a unique identifier operative to store a first error data, a processor operative to retrieve the first error data from the first register, associate the first error data with the unique identifier, and generate a first uniform error packet including the first error data and the unique identifier and a storage medium operative to store the first uniform error packet.

Abstract: A DDR SDRAM DIMM for a mainframe main storage subsystem has a plurality of DDR SDRAMs on a rectangular printed circuit board having a first side and a second side, a length (152 MM=6 inch) between 149 and 153 millimeters and optimized at 149.15 mm or 151.35 mm in length and first and second ends having a width smaller than the length; a first plurality of connector locations on the first side extending along a first edge of the board that extends the length of the board, a second plurality of connector locations of the second side extending on the first edge of the board, a locating key having its center positioned on the first edge and located between 80 mm and 86 mm and optimized with a locating key 1.5 mm wide centered at 81.58 or 85.67 mm from the first end of the board and located between 64 and 70 mm and optimized with the locating key centered at 67.58 or 65.675 from the second end of the board.

Abstract: Storage protection keys and system data share the same physical storage. The key region is dynamically relocatable by firmware. A Configuration Array is used to map the absolute address of the key region in to its physical address. The absolute address of keys can be fixed even though the physical location of the keys is relocated into a different region. A triple-etect double correct ECC scheme is used to protect keys. The ECC scheme is different from regular data in the storage and can be used to detect illegal access. Extra firmware and hardware is also designed to restrain customer's applications from directly accessing keys. With the key region being relocatable, the firmware could move the key region away from a known faulty area in a memory to improve system RAS. We also achieved the commonality objective that key memory device can use the same memory devices with other server systems that do not use keys.

Abstract: A method of regulating power for multi-node computer system components has a closed-ring path that links all the power governors and circulating in the ring is a system power number that represents the power consumption of the entire system. Meanwhile, all the governors keep counting its local power consumption. Each time the number passes a governor, the governor will add its local count onto this number, store this number for future usage, and reset its local count. When the new number returns back to the same power governor, the governor will subtract the new number with its stored number to calculate the overall system power usage within a number circulation period. The system power number overflow problem is also detected with a counter if the incoming number is smaller then the number previously stored. The counter whose counting capacity is greater than the maximum system power usage on all the nodes within a number circulation period.

Abstract: A method for regulating system power using a power governor for DRAM in a multi-node computer system regulating memory power consumption of an entire computer system employs a closed ring that connects all the power governors within the system to enable them to work in concert so that each of the power governors has the knowledge of memory activities within the entire system. They then control and limit the memory usage based on a true overall measurement instead of just local measurement. Each nodal power governor has memory command counter, ring number receiver, ring number transmitter, governor activation controller, and memory traffic controller. Each nodal power governor counts the weight of memory command. The degree of limiting actual memory activities can be programmed when the governor is active. Besides, the command priorities can be adjusted in activation too. A hybrid ring structure can be employed with a nodal power structure to achieve the fastest number circulation speed economically.

Abstract: A power governor for DRAM in a multi-node computer system regulating memory power consumption of an entire computer system employs a closed ring that connects all the power governors within the system to enable them to work in concert so that each of the power governors has the knowledge of memory activities within the entire system. They then control and limit the memory usage based on a true overall measurement instead of just local measurement. Each nodal power governor has memory command counter, ring number receiver, ring number transmitter, governor activation controller, and memory traffic controller. Each nodal power governor counts the weight of memory command. The degree of limiting actual memory activities can be programmed when the governor is active. Besides, the command priorities can be adjusted in activation too. A hybrid ring structure can be employed with a nodal power structure to achieve the fastest number circulation speed economically.