Abstract: The present application relates to the field of photovoltaic technologies and provides a solar cell and a photovoltaic module. The solar cell includes: a silicon substrate, where the silicon substrate includes a first surface and a second surface that are opposite to each other; an N-type doped layer, formed on at least some regions of the first surface of the silicon substrate, where a sheet resistance of the N-type doped layer is 14 ohms/square to 40 ohms/square; and a plurality of N-type fingers distributed at intervals and in parallel, formed on a side of the N-type doped layer facing away from the silicon substrate, where a distance between adjacent N-type fingers is less than 1.391 mm.

Abstract: A method and a communication apparatus for sending system information are disclosed. According to the method: A network device determines, based on a transmission repetition period of RMSI, a first sending period and a time domain resource corresponding to the first sending period, and sends the RMSI to a terminal device based on the first sending period and the time domain resource corresponding to the first sending period. The transmission repetition period is a transmission repetition period for transmission of the RMSI by using each of a plurality of beams. The time domain resource corresponding to the first sending period includes: a time domain resource that is in a time domain resource corresponding to the transmission repetition period and that is used for transmitting a first beam group of the plurality of beams and not for transmitting any beam other than the first beam group of the plurality of beams.

Abstract: The present application discloses a back contact solar cell and a photovoltaic module. An example back contact solar cell includes a semiconductor substrate, a first doped semiconductor layer, a second doped semiconductor layer, and a dielectric layer. The first doped semiconductor layer is disposed on a first region and a third region. The second doped semiconductor layer is disposed on a second region and the third region. A doping type of the first doped semiconductor layer is opposite to that of the second doped semiconductor layer. On the third region, the first doped semiconductor layer and the second doped semiconductor layer overlap in a thickness direction of the semiconductor substrate to form a stacked structure. The dielectric layer is disposed at least between the first doped semiconductor layer and the second doped semiconductor layer. A leakage path is disposed in the dielectric layer.

Abstract: The present application relates to a silicon solar cell. In one example, a silicon solar cell includes a silicon substrate including an antimony element; and a carrier separation layer, formed on the silicon substrate. At least some regions of the carrier separation layer on a side close to the silicon substrate have an antimony-containing layer. The antimony-containing layer includes the antimony element. A peak concentration of the antimony element in the antimony-containing layer is a1, and a1 is equal to or greater than 1E13 atoms/cm3.

Abstract: The present application discloses a back contact solar cell, a method for manufacturing the same, and a photovoltaic module. An example back contact solar cell includes a semiconductor substrate, a first doped region, a second doped region, and at least one conductive semiconductor structure. Each conductive semiconductor structure includes a first conductive semiconductor portion and a second conductive semiconductor portion. The first conductive semiconductor portion is located in a spacer region between the first doped region and the second doped region. A part of the first doped region and a part of the second doped region are electrically connected to the first conductive semiconductor portion. The second conductive semiconductor portion is disposed above a part of the first doped region and/or the second doped region that faces away from the semiconductor substrate.

Abstract: This disclosure provides a back contact solar cell and a method for manufacturing a back contact solar cell. In one example, a back contact solar cell includes a silicon substrate having first regions and second regions alternately distributed on a back surface of the silicon substrate, and a first doped semiconductor layer formed on a first region on the back surface of the silicon substrate. A groove structure concaving inward the silicon substrate relative to a surface of the first region is formed on a second region. An end portion of the first doped semiconductor layer adjacent to the second region is arranged in a suspended manner.

Abstract: The present invention belongs to the field of chemical industry and discloses a nanocellulose containing ultrastable water-based foam, a method of preparing the same, and uses thereof. The foam comprises, by mass fraction, the following components: based on 100 parts of the total mass of a compound water-based foam, 0.1-2.0 parts of nanocellulose hydrogel, 0.5-5.0 parts of sodium dodecyl sulfate, 1.0-5.0 parts of tetradecanol, 0.1-3.0 parts of polyvinyl alcohol, and the balance water. The above components are stirred at a high speed to generate a foam, thereby obtaining the nanocellulose containing ultrastable water-based foam.

Abstract: Disclosed are a three-dimensional measurement method for the key morphological features on an aircraft surface, a three-dimensional measurement system for the key morphological features on the aircraft surface, and a method for using the three-dimensional measurement system. In this method, the distribution characteristics of point clouds are fully utilized, and an angle is formed between a direction vector of the measurement point and a seam direction, which ensures that the point clouds can gradually approach the actual edge of the seam, and eliminates the impact of randomness. The point nearest to the seam in the point clouds on both sides of the seam is selected as the nearest point, which overcomes the limitation of the density of the point cloud, so that the distance between the selected nearest point and the actual edge of the seam is greatly reduced.

Abstract: The present application discloses a back contact solar cell and a photovoltaic module. In one example, a back contact solar cell includes a semiconductor substrate, a first doped semiconductor part, a second doped semiconductor part, a first dielectric passivation layer, and a second dielectric passivation layer. Each of the first dielectric passivation layer and the second dielectric passivation layer includes a first passivation sub-layer having a field passivation function. A conductivity type of the first doped semiconductor part is opposite to that of fixed charges of the first passivation sub-layer. A thickness of the first passivation sub-layer included in the first dielectric passivation layer is greater than a thickness of the first passivation sub-layer included in the second dielectric passivation layer. Each of the first dielectric passivation layer and the second dielectric passivation layer further includes a second passivation sub-layer having a chemical passivation function.

Abstract: The present application discloses a back contact solar cell and a photovoltaic module. In one example, a back contact solar cell includes a semiconductor substrate, a first doped semiconductor part, a second doped semiconductor part, a first dielectric passivation layer, and a second dielectric passivation layer. Each of the first dielectric passivation layer and the second dielectric passivation layer includes a first passivation sub-layer having a field passivation function. A conductivity type of the first doped semiconductor part is opposite to that of fixed charges of the first passivation sub-layer. Each of the first dielectric passivation layer and the second dielectric passivation layer further includes a second passivation sub-layer having a chemical passivation function. The first passivation sub-layer of the first dielectric passivation layer includes a hydrogen-containing passivation layer. A portion of the hydrogen-containing passivation layer has micro-structures.

Abstract: The present disclosure discloses a rare earth permanent magnet, its preparation method and motors. The rare earth permanent magnet comprises a light rare earth element and a heavy rare earth element. The light rare earth element must contain Nd and the heavy rare earth element must contain Dy and Tb; along the width direction, the rare earth permanent magnet has two edge portions and one middle portion; along the direction from the outer edge of the edge portion towards the central axis of the middle portion, the weight percentage of Dy gradually increases, while the weight percentage of Tb gradually decreases; the average coercive force of the edge portion is more than that of the middle portion. The rare earth permanent magnet of the present disclosure has a good anti-demagnetization performance.

Abstract: A solar cell includes a solar cell body, a plurality of fingers, and a plurality of first interconnection structures. At least a part of regions of different first interconnection structures distributed at intervals along a second direction are collinear with a same connection line of a plurality of connection lines. A quantity of connection lines located on the same target surface is N1, a quantity of first interconnection structures intersecting with a target line segment located on the target surface is N2, and N2<½N1. The target line segment is a connection line segment between a midpoint of an edge that has a larger length in two edges of the target surface extending along a first direction and being arranged opposite to each other and a vertex-angle endpoint corresponding to an edge that has a smaller length in the two edges.

Abstract: The present application provides a solar cell, including: a silicon substrate, and a plurality of fingers formed on a surface of the silicon substrate. The silicon substrate is doped with antimony, and a concentration of antimony in the silicon substrate is a atom/cm3. The plurality of fingers extend in a first direction, and a density of fingers with the same polarity in a second direction perpendicular to the first direction is n/cm. n and a meet the following relationship: 35?k·lg a?n?35?Ig a, where k is a constant less than or equal to 2, a ranges from 1E13 to 2E17.

Abstract: The invention relates to the technical field of light stand boom arms, and discloses an adjustable light stand boom arm, including supports. An inside of each of the supports is provided with a mounting opening, an inside of the mounting opening is provided with a docking mechanism for docking, and an outside of the support is fixedly connected with a fixed block. In the invention, the connection of the plurality of supports and the change of angles are realized, and an overall length of the supports can be adjusted, thereby improving the practicability of the supports and the efficiency of photography.

Abstract: This application provides a resource allocation method and apparatus, and belongs to the field of communication technologies, to improve frequency domain resource utilization. In the method, when a network device reserves, for a first terminal, a frequency domain resource set that can be used by the terminal, the network device may indicate, by using first information, the first terminal to use a part of frequency domain resources in the frequency domain resource set, for example, indicate the first terminal to use only a first frequency domain resource to perform data transmission. In this way, data transmission of a plurality of terminals is completed by using a frequency domain resource set of one terminal, and frequency domain resource utilization is improved. In addition, the terminal can implement TTI-level resource allocation type switching, so that a resource allocation type of the terminal can be adjusted and matched in real time.

Abstract: This disclosure provides a back contact solar cell and a method for manufacturing a back contact solar cell. In one example, a back contact solar cell includes a silicon substrate having first regions and second regions alternately distributed on a back surface of the silicon substrate, and a first doped semiconductor layer formed on a first region on the back surface of the silicon substrate. A groove structure concaving inward the silicon substrate relative to a surface of the first region is formed on a second region. An end portion of the first doped semiconductor layer adjacent to the second region is arranged in a suspended manner.

Abstract: The present disclosure discloses a solar cell and a manufacturing method therefor. An example method includes providing a semiconductor substrate having a first region and a second region, forming a tunneling passivation layer on at least the first region, and perform wet chemical processing on the first region and the second region to form a first surface structure in the first region and a second surface structure in the second region. An etching rate of etching the first region that is covered by the tunneling passivation layer is different from an etching rate of etching the second region. The first surface structure is different from the second surface structure.

Abstract: A novel scatterer density-based predictive channel modeling method includes: obtaining channel data with different scenarios scatterer densities through a channel measurement or a simulation; obtaining corresponding channel statistical characteristic parameters through a data preprocessing based on the channel data; constructing a graph dataset by taking scatterer density in different scenarios as main characteristics to enhance a space-time correlation of data; dividing the graph dataset according to a certain proportion, and then using a graph attention network and a gated recurrent unit network to extract correlated channel space-time characteristics and implementing a cross scenario channel prediction. The method can capture channel variations in different scenarios, and obtain channel characteristics under different scatterer densities through high space-time correlated channel characteristics, and has good performance in channel prediction based on scenario.

Abstract: Methods and systems are provided for automatically diagnosing a patient based on a reduced lead electrocardiogram (ECG), using one or more deep neural networks. In one embodiment, a method for automatically diagnosing a patient using a reduced lead ECG comprises, acquiring reduced lead ECG data, wherein the reduced lead ECG data comprises less than twelve lead signals, determining a type of each of the less than twelve lead signals, selecting a deep neural network based on the type of each of the less than twelve lead signals, and mapping the less than twelve lead signals to a diagnosis using the deep neural network. In this way, reduced lead ECG data may be mapped to a diagnosis using an intelligently selected deep neural network, wherein the deep neural network was trained on reduced lead ECG data comprising a same set of ECG lead types as the acquired reduced lead ECG data.

Abstract: Disclosed are an online program update method and device for an optical amplifier. The method comprises: when a program update instruction is sent, a Microcontroller Unit MCU receiving update programs of MCU and a programmable logic device FPGA, storing them in a program memory device, and sending an update instruction to FPGA; FPGA terminating; operations of a digital-to-analog converter DAC according to the instruction and a current state remaining unchanged; MCU loading new codes of MCU and FPGA while DAC remains in state of halting refreshing; and after MCU and FPGA run the new codes, reading previously stored data, and starting switching from a previous operation state to enter normal operation state. On basis of conventional optical amplifier control, the invention combines characteristics of MCU and FPGA, and ensures uninterrupted service of optical amplifiers, achieving smooth transition of services, thereby improving stability and reliability of whole optical communications systems.