Abstract: The present application relates to the field of semiconductor technologies, and discloses methods for manufacturing a semiconductor device. The manufacturing method includes: forming an etchable material layer on a substrate; forming multiple openings on the etchable material layer by means of patterning processing to determine a position of a core; etching the substrate at bottoms of the multiple openings, so that the bottoms of the multiple openings extend into the substrate; depositing a material of the core to fill the multiple openings; etching the material of the core so as to expose the etchable material layer; removing the etchable material layer to leave multiple cores; depositing spacers; over etching the spacers so as to expose the multiple cores, and etching a part of the substrate, where an etching depth of the substrate is the same as a depth to which the openings extend into the substrate; and removing the multiple cores.

Abstract: A method of assembly a dual stage actuated suspension includes either applying an adhesive to a microactuator motor and then B-staging the adhesive, or applying an adhesive that has already been B-staged such as in film adhesive form to the microactuator then assembling the microactuator into a suspension and then finishing the adhesive cure. The adhesive can be applied to bulk piezoelectric material, with the adhesive being B-staged either before or after it is applied to the bulk piezoelectric material, and the piezoelectric material then singulated into a number of individual piezoelectric microactuators. The method allows greater control over how much adhesive is used, and greater control over spread of that adhesive and control over potential contamination, than traditional liquid epoxy dispense methods.

Abstract: Semiconductor device and fabrication method are provided. The method includes: providing a base substrate with a bottom metallic layer in the base substrate and a dielectric layer on the base substrate; forming interconnect openings through the dielectric layer and exposing the bottom metallic layer, where each interconnect openings includes a contacting hole and a groove on the contacting hole; forming a first conducting layer in the contacting hole, where the first conducting layer is made of a material having a first conductivity along a direction from the bottom metallic layer to a top surface of the first conducting layer; and after forming the first conducting layer, forming a second conducting layer in the groove, where the second conducting layer is made of a material having a second conductivity along a direction parallel to the top surface of the base substrate and the first conductivity is greater than the second conductivity.

Abstract: A touch-sensitive dimmer, configured to be electrically coupled to an illumination load to adjust an illuminance of the illumination load. It includes a hollow body, a power source printed circuit board assembly (PCBA) disposed inside the body, a control PCBA, and a touch-sensitive display panel, touch-sensing components and a display element disposed on the control PCBA. The display element displays changes of illumination load adjustment modes based on trigger signals generated by the touch-sensing components. The touch-sensitive display panel includes touch keys which correspond to the touch-sensing components and a display window which corresponds to the display element, and is assembled with the control printed circuit board assembly. The touch-sensitive dimmer combines touch-sensing functions and display screen functions to achieve intelligent control. By incorporating a wireless communication module, the dimmer can further achieve remote by a remote control device.

Abstract: A method and an apparatus for storing, reading, and displaying a plurality of multimedia files are disclosed.

Abstract: A multi-layer microactuator for a hard disk drive suspension includes a piezoelectric (“PZT”) layer, a constraining layer, a lower electrode layer, a middle electrode layer, and an upper electrode layer. The lower electrode layer is on a bottom surface of the PZT layer and includes a first lower electrode island, a second lower electrode island, and a third lower electrode island. The second lower electrode island includes a finger extending from a main body portion towards a first end of the PZT layer. The middle electrode layer is disposed between a top surface of the PZT layer and a bottom surface of the constraining layer. The middle electrode layer including a first middle electrode island and a second middle electrode island, the second middle electrode island including a finger extending from a main body portion towards the first end of the PZT layer.

Abstract: A dual stage actuated suspension has a first piezoelectric microactuator on the trace gimbal assembly (TGA), and a pseudo feature located laterally opposite the microactuator. The pseudo feature is formed integrally with the TGA from at least one of the base metal layer, the insulative layer, and the conductive layer that make up the TGA. The pseudo feature helps to balance the suspension. The suspension can optionally have a second microactuator located proximal of the first microactuator in order to perform coarser positioning than the first microactuator, such that the suspension is a tri-stage actuated suspension.

Abstract: A multi-layer piezoelectric microactuator assembly has at least one poled and active piezoelectric layer and one poled but inactive piezoelectric layer. The poled but inactive layer acts as a constraining layer in resisting expansion or contract of the first piezoelectric layer thereby reducing or eliminating bending of the assembly as installed in an environment, thereby increasing the effective stroke length of the assembly. Poling only a single layer would induce stresses into the device; hence, polling both piezoelectric layers even though only one layer will be active in use reduces stresses in the device and therefore increases reliability.

Abstract: A semiconductor device includes an active region having a doped region, a first contact member on the doped region, gate structures including a first gate structure having a first gate and a second gate structure having a second gate, the first and second gate structures being adjacent to each other and on opposite sides of the first contact member, an interlayer dielectric layer on the active region and surrounding the first and second gate structures, and the first contact member, a first insulator layer on a portion of the interlayer dielectric layer, a first contact on an upper surface of the first gate and a second contact on an upper surface of the second gate, and a second insulator layer surrounding the first and second contacts each having an upper surface lower than an upper surface of the second insulator layer.

Abstract: A semiconductor structure and a method for fabricating the semiconductor structure are provided. The method includes providing a base substrate including a device region and a peripheral region. The base substrate includes a base interconnection structure. The method also includes forming a medium layer on the base substrate. In addition, the method includes forming a first trench having a first depth in the peripheral region, and forming a second trench having a second depth in the device region. The second depth is greater than the first depth. Moreover, the method includes forming a first opening in the device region and forming a second opening in the peripheral region. Further, the method includes forming a first interconnection structure by filling the first opening with a conductive material and forming a second interconnection structure by filling the second opening with the conductive material.

Abstract: Semiconductor device and fabrication method are provided.

Abstract: A PZT microactuator such as for a hard disk drive has a restraining layer bonded on its side that is opposite the side on which the PZT is mounted. The restraining layer comprises a stiff and resilient material such as stainless steel. The restraining layer can cover most or all of the top of the PZT, with an electrical connection being made to the PZT where it is not covered by the restraining layer. The restraining layer reduces bending of the PZT as mounted and hence increases effective stroke length, or reverses the sign of the bending which increases the effective stroke length of the PZT even further. The restraining layer can be one or more active layers of PZT material that act in the opposite direction as the main PZT layer. The restraining layer(s) may be thinner than the main PZT layer.

Abstract: A fabrication method for a semiconductor device is provided. The method includes: forming a semiconductor substrate including a first region and a second region; forming intrinsic fins protruding from the first region of the semiconductor substrate, and dummy fins protruding from the second region of the semiconductor substrate; forming a first isolation layer to cover a portion of sidewalls of the dummy fins and a portion of sidewalls of the intrinsic fins; forming a protection layer on surfaces of the intrinsic fins, to cover a portion of the intrinsic fins above a surface of the first isolation layer; removing the dummy fins and a portion of the first isolation layer in the second region; and forming a second isolation layer on the second region of the semiconductor substrate.

Abstract: A polarizer and fabrication method thereof, a display panel and a display device are provided. The polarizer includes an organic film capable of being aligned during a polarization treatment. The organic film includes at least one first region having a first polarization axis and at least one second region having a second polarization axis. A direction of the first polarization axis is different from a direction of the second polarization axis.

Abstract: A semiconductor structure a base substrate and a sidewall spacer layer formed on the base substrate. The sidewall spacer layer includes a plurality of first sidewall spacer layers and a plurality of second sidewall spacer layers spaced apart from each other. At least one sidewall of a second sidewall spacer layer of the plurality of second sidewall spacer layers is formed on a first sidewall spacer layer of the plurality of first sidewall spacer layers. The plurality of first sidewall spacer layers has a thickness greater than the plurality of second sidewall spacer layers, based on a surface of the base substrate. The plurality of first sidewall spacer layers has a material structure different than the plurality of second sidewall spacer layers.

Abstract: In a gimbal dual stage actuated (GSA) suspension for a disk drive, a viscoelastic damper is disposed between and adhered to the suspension's PZT microactuator and the flexure trace gimbal. The damper is dispensed in fluid form onto the trace gimbal during assembly of the suspension, the PZT is placed onto the damper, and the damper is then hardened leaving it adhered to both the PZT and the trace gimbal. The damper reduces peaks in the frequency response of the PZT actuation, thus allowing higher bandwidth of the servo control loop and increasing the effective read and write speeds for the suspension.

Abstract: The present invention provides a method and a device for image processing, which are applied to the field of image processing. The method includes: receiving a first image, wherein the first image includes a face; detecting the face and a background region in the first image, establishing a three-dimensional model of the face according to the first image; rotating the three-dimensional model of the face by a first angle; projecting the three-dimensional model of the face rotated by the first angle to an image coordinate system of the first image, and fusing a face region with a processed background region to obtain a second image. The prevent invention provides a method and device for image processing, which can adjust the angle of a face in a captured image to achieve the effect of face enhancement.

Abstract: The present invention provides a method and a device for three-dimensional modeling, used in the field of image processing. The method includes: receiving a first two-dimensional image and a depth map corresponding to the first two-dimensional image; the first two-dimensional image and the depth map respectively include a face; fitting three-dimensional face model by a first three-dimensional face database according to a position of a face feature point in the first two-dimensional image and the depth map corresponding to the first two-dimensional image. The method and the device for three-dimensional modeling provided by the present invention can improve the efficiency of the facial three-dimensional modeling and the precision of modeling.

Abstract: The present disclosure relates to a shield cover for a radiation source machine and a security inspection apparatus. The shield cover for a radiation source machine comprises: a frame body provided with a receiving chamber for receiving the radiation source machine, an end opening and an ray exit through which rays are emitted out from the radiation source machine; an end cover disposed at the end opening of the frame body and provided with a sealed chamber communicating with the receiving chamber; and a connecting member disposed between the end cover and the frame body and provided with an opening for communicating the sealed chamber of the end cover with the receiving chamber of the frame body, and the end cover being movably connected to the frame body by the connecting member such that a distance of the end cover from the end opening of the frame body is adjustable.

Abstract: A foamed skeleton reinforced composite, comprising a foamed skeleton and a matrix material. The foamed skeleton is selected from at least one of a metal foamed skeleton, an inorganic non-metal foamed skeleton, and an organic foamed skeleton. The matrix material is selected from a metal or a polymer.