Abstract: Semiconductor device and fabrication method are provided. The method includes: providing a base substrate with a bottom metallic layer in the base substrate and a dielectric layer on the base substrate; forming interconnect openings through the dielectric layer and exposing the bottom metallic layer, where each interconnect openings includes a contacting hole and a groove on the contacting hole; forming a first conducting layer in the contacting hole, where the first conducting layer is made of a material having a first conductivity along a direction from the bottom metallic layer to a top surface of the first conducting layer; and after forming the first conducting layer, forming a second conducting layer in the groove, where the second conducting layer is made of a material having a second conductivity along a direction parallel to the top surface of the base substrate and the first conductivity is greater than the second conductivity.

Abstract: A PZT microactuator such as for a hard disk drive has a restraining layer bonded on its side that is opposite the side on which the PZT is mounted. The restraining layer comprises a stiff and resilient material such as stainless steel. The restraining layer can cover most or all of the top of the PZT, with an electrical connection being made to the PZT where it is not covered by the restraining layer. The restraining layer reduces bending of the PZT as mounted and hence increases effective stroke length, or reverses the sign of the bending which increases the effective stroke length of the PZT even further. The restraining layer can be one or more active layers of PZT material that act in the opposite direction as the main PZT layer. The restraining layer(s) may be thinner than the main PZT layer.

Abstract: A dual stage actuated suspension has a first piezoelectric microactuator on the trace gimbal assembly (TGA), and a pseudo feature located laterally opposite the microactuator. The pseudo feature is formed integrally with the TGA from at least one of the base metal layer, the insulative layer, and the conductive layer that make up the TGA. The pseudo feature helps to balance the suspension. The suspension can optionally have a second microactuator located proximal of the first microactuator in order to perform coarser positioning than the first microactuator, such that the suspension is a tri-stage actuated suspension.

Abstract: Embodiments of the present disclosure provide a playlist list determining method and device, an electronic apparatus, and a storage medium. The method comprises: determining feature data of music features comprised in preselected playlists and feature data of music features of preferences of a target user, wherein the music features comprised in the preselected playlists correspond to the music features of the preferences of the target user; calculating correlation coefficients between the feature data of the music features comprised in the preselected playlists and the feature data of the music features corresponding to the preferences of the target user; and determining the preselected playlists to be candidate playlists when the correlation coefficient between the feature data of the music features comprised in the preselected playlists and the feature data of the music features corresponding to the preferences of the target user meets a preset condition.

Abstract: Disclosed is a spirocyclic aryl phosphorus oxide or sulfide as an ALK inhibitor, particularly, a compound represented by formula (I) as an ALK inhibitor or pharmaceutically acceptable salt thereof.

Abstract: A method for fabricating a semiconductor structure includes providing a base substrate, forming a plurality of core layers on the base substrate, forming a sidewall spacer film on the base substrate covering top and sidewall surfaces of the core layers, and forming a sidewall spacer layer by removing a portion of the sidewall spacer film formed above the top surface of the core layers. The sidewall spacer layer includes a first portion having a first thickness on the sidewall surfaces of the core layers, and a second portion having a second thickness on the base substrate. The method further includes removing the plurality of core layers after forming the sidewall spacer layer, removing the second portion of the sidewall spacer layer from the base substrate after removing the core layers, and using the first portion of the sidewall spacer layer as a hard mask layer.

Abstract: A method of manufacturing a piezoelectric microactuator having a wrap-around electrode includes forming a piezoelectric element having a large central electrode on a top face, and having a wrap-around electrode that includes the bottom face, two opposing ends of the device, and two opposing end portions of the top face. The device is then cut through the middle, separating the device into two separate piezoelectric microactuators each having a wrap-around electrode.

Abstract: In a gimbal dual stage actuated (GSA) suspension for a disk drive, a viscoelastic damper is disposed between and adhered to the suspension's PZT microactuator and the flexure trace gimbal. The damper is dispensed in fluid form onto the trace gimbal during assembly of the suspension, the PZT is placed onto the damper, and the damper is then hardened leaving it adhered to both the PZT and the trace gimbal. The damper reduces peaks in the frequency response of the PZT actuation, thus allowing higher bandwidth of the servo control loop and increasing the effective read and write speeds for the suspension.

Abstract: A method includes providing a semiconductor structure including an active region having a first doped region, a first contact member on the first doped region, first and second gates on opposite sides of the first contact member, an interlayer dielectric layer surrounding the first and second gates and the first contact member. The method also includes forming a first insulator layer having first and second contact holes, forming a second insulator layer on sidewalls of the first and second contact holes, filling the first and second contact holes with a first conductive material to form first and second contacts to the first and second gates, forming a third insulator layer on the first and second contacts, selectively etching the first insulator layer to form a third contact hole, and filling the third contact hole with a second conductive material to form a third contact to the first contact member.

Abstract: A display panel includes a color filter film, a first polarizing film, and a second polarizing film. The color filter film comprises a color filter region and a light blocking region. The first polarizing film, placed at one side of the color filter film, comprises a first region corresponding to the color filter region of the color filter film and a second region corresponding to the light blocking region of the color filter film. The second polarizing film, placed at the one side of the color filter film, comprises a first region corresponding to the color filter region of the color filter film and a second region corresponding to the light blocking region of the color filter film, wherein a polarization axis of the second region of the second polarizing film and a polarization axis of the second region of the first polarizing film are perpendicular to each other.

Abstract: Disclosed are two axially chiral isomers and pharmaceutically available salts thereof, preparation method therefor, and pharmaceutical use of the two axially chiral isomers or pharmaceutical compositions thereof.

Abstract: A method of manufacturing a piezoelectric microactuator having a wrap-around electrode includes forming a piezoelectric element having a large central electrode on a top face, and having a wrap-around electrode that includes the bottom face, two opposing ends of the device, and two opposing end portions of the top face. The device is then cut through the middle, separating the device into two separate piezoelectric microactuators each having a wrap-around electrode.

Abstract: A semiconductor structure and a method for fabricating the semiconductor structure are provided. The method includes forming a substrate including a plurality of initial fins, and forming an isolation layer on the substrate between the adjacent initial fins. The method also includes forming a stop layer, and forming a filling opening in the stop layer and forming a trench in the initial fins and the isolation layer. In addition, the method includes forming an isolation structure in the trench and forming a sacrificial layer in the filling opening. Moreover, the method includes removing the stop layer, and back-etching the isolation layer to expose portions of sidewalls of the fins. Further, the method includes forming a gate structure, across a length portion of the fins and covering portions of top surface and sidewalls of each fin, and on the fins, and forming a dummy gate structure on the isolation structure.

Abstract: The present disclosure provides a LCD panel. The LCD panel includes a first substrate, a second substrate, a liquid crystal layer sandwiched between the first substrate and the second substrate, a plurality of regions arranged in an array including a first region and a second region, a first organic film on the first substrate, and a second organic film on the second substrate. In the first region, at least one stripe-shaped first electrode is formed having a first configuration direction, the first organic film has a polarization direction in a first direction and the second organic film has a polarization direction perpendicular to the first direction. In the second region, at least one stripe-shaped second electrode is formed having a second configuration direction, the first organic film has a polarization direction in a second direction and the second organic film has a polarization direction perpendicular to the second direction.

Abstract: A speaker is provided in the present disclosure. The speaker includes a magnetic circuit system, a vibration system and an auxiliary system suspending the vibration system above the magnetic circuit system. The magnetic circuit system comprises a yoke, permanent magnets assembled on the yoke, and a magnetic gap near the permanent magnets. The yoke comprises an upper surface for assembling the permanent magnets, a lower surface opposite to the upper surface, side surfaces connecting the upper surface and the lower surface, and communication conduits extending through the upper surface and the side surface to communicate the magnetic gap and the space outside the speaker.

Abstract: A speaker is provided in the present disclosure. The speaker includes a magnetic circuit system for providing magnetic field, a diaphragm, a suspension, a drive mechanism and a horizontal former, which is retained on the surface of the diaphragm directly facing the magnetic circuit system. The diaphragm is suspended above the magnetic circuit system for generating sound by vibrating. The suspension is used to suspend the diaphragm above the magnetic circuit system. The drive mechanism is disposed under the diaphragm and can interact with the magnetic circuit system so as to drive the diaphragm to vibrate in order to generate sound. The horizontal former is retained on the surface of the diaphragm directly facing the magnetic circuit system, wherein the horizontal former is provided with a communication space which communicates the space under the diaphragm and the space under the suspension.

Abstract: Semiconductor structures and fabrication methods are provided. An exemplary fabrication method includes providing a base substrate; forming gate structures over the base substrate; forming source/drain doping regions in the base substrate at two sides of each of the gate structures; forming an interlayer dielectric layer over the base substrate and the source/drain doping regions; forming a mask layer having a plurality of first openings there-through and over the interlayer dielectric layer, the first opening having a first length; performing a surface treatment process to remove portions of the mask layer from the first openings and to increase the first length of the first openings; forming contact through holes passing through the interlayer dielectric layer and exposing the source/drain doping regions using the mask layer with the first openings having the increased first length as an etching mask; and forming a contact via in each of the contact through holes.

Abstract: A semiconductor structure and a method for fabricating the semiconductor structure are provided. The method includes providing a base substrate including a device region and a peripheral region. The base substrate includes a base interconnection structure. The method also includes forming a medium layer on the base substrate. In addition, the method includes forming a first trench having a first depth in the peripheral region, and forming a second trench having a second depth in the device region. The second depth is greater than the first depth. Moreover, the method includes forming a first opening in the device region and forming a second opening in the peripheral region. Further, the method includes forming a first interconnection structure by filling the first opening with a conductive material and forming a second interconnection structure by filling the second opening with the conductive material.

Abstract: In a gimbal dual stage actuated (GSA) suspension for a disk drive, a viscoelastic damper is disposed between and adhered to the suspension's PZT microactuator and the flexure trace gimbal. The damper is dispensed in fluid form onto the trace gimbal during assembly of the suspension, the PZT is placed onto the damper, and the damper is then hardened leaving it adhered to both the PZT and the trace gimbal. The damper reduces peaks in the frequency response of the PZT actuation, thus allowing higher bandwidth of the servo control loop and increasing the effective read and write speeds for the suspension.