Abstract: An insulated gate bipolar transistor, comprising an anode second conductivity-type region and an anode first conductivity-type region provided on a drift region; the anode first conductivity-type region comprises a first region and a second region, and the anode second conductivity-type region comprises a third region and a fourth region, the dopant concentration of the first region being less than that of the second region, the dopant concentration of the third region being less than that of the fourth region, the third region being provided between the fourth region and a body region, the first region being provided below the fourth region, and the second region being provided below the third region and located between the first region and the body region.

Abstract: Embodiments of the present disclosure provide a page loading method and apparatus, an electronic device, and a storage medium. The method includes: acquiring attribute information of a target page, which characterizes a page layout of the target page; obtaining, in accordance with the attribute information, a corresponding target constructor which has an attribute parameter for receiving the attribute information; and constructing a target view object in accordance with the target constructor and the attribute information, and displaying the target page based on the target view object.

Abstract: Embodiments of the present disclosure provide a page display method, apparatus, electronic device, and storage medium, comprising acquiring a layout file of a target page, which is used to characterize a page layout of the target page; according to the layout file, obtaining view data of the target page, which is used to characterize view attributes of view objects within the target page; based on the view data, asynchronously generating a target view tree corresponding to the target page via at least two processing threads; and displaying the target page based on the target view tree.

Abstract: A low-frequency filtering unit includes a vibrator arm, a balun base, a balun feeder line and a balun chamber tube for arranging the balun feeder line; the vibrator arm includes two radiation arms, one end of the radiation arm is vertically connected to one end of the other radiation arm to form an integral L-shaped right-angle structure, the balun chamber tube is arranged at the connection between the two radiation arms, and the wave-trap structures on the transverse radiation arm and the longitudinal radiation arm are symmetrically arranged with a 45° angular bisector of the L-shaped right-angle structure as a center line; the low-frequency filtering unit is provided with four vibrator arms which are symmetrically arranged in pairs around the periphery of the balun base along a diagonal line and form an integral cross orthogonal structure, and the vibrator arms.

Abstract: The disclosed semiconductor testing socket comprises a testing socket body, a guiding frame, and a height adjusting mechanism. The guiding frame is mounted above the testing socket body and is provided with a central insertion opening. The height adjusting mechanism is embedded at the edges of the central insertion opening. The height adjusting mechanism comprises an operable part that can be operated and a movable part that can be moved between a first position located outside the central insertion opening and a second position located within the central insertion opening by operating the operable part. The movable part comprises a supporting surface configured for supporting a specimen to be tested when located at the second position.

Abstract: The present invention provides a speaker including a first frame, a second frame, a first vibration system, a second vibration system, and a magnetic circuit system. The first vibration system includes a first diaphragm and a pair of first voice coils. The second vibration system includes a second diaphragm and a pair of second voice coils. The pair of first voice coils is arranged spaced apart from each other in a first direction. The pair of second voice coils is arranged spaced apart from each other in a second direction. The first and second directions are perpendicular to a vibration direction of the first diaphragm. The first direction is perpendicular to the second direction. Winding planes of the first and second voice coils are parallel to the vibration direction. The speaker of the present invention has strong anti-swing ability and can save space in the height direction.

Abstract: The present invention provides a speaker including a first frame, a second frame forming a receiving room with the first frame, a first vibration system, a second vibration system, and a magnetic circuit system. The first vibration system includes a first diaphragm and a first voice coil. The second vibration system includes a second diaphragm and a second voice coil. Winding planes of the first voice coil and the second voice coil are parallel to a vibration direction of the first diaphragm. Taking a center point of the speaker as the center, a structure of the first voice coil is centrosymmetric with the structure of the second voice coil. The speaker of the present invention is narrower in size, the upper and lower amplitudes are synchronized, and the functions are diverse. The two diaphragms can be driven separately to achieve the effect of sensitivity superposition.

Abstract: A PZT microactuator such as for a hard disk drive has a restraining layer bonded on its side that is opposite the side on which the PZT is mounted. The restraining layer comprises a stiff and resilient material such as stainless steel. The restraining layer can cover most or all of the top of the PZT, with an electrical connection being made to the PZT where it is not covered by the restraining layer. The restraining layer reduces bending of the PZT as mounted and hence increases effective stroke length, or reverses the sign of the bending which increases the effective stroke length of the PZT even further. The restraining layer can be one or more active layers of PZT material that act in the opposite direction as the main PZT layer. The restraining layer(s) may be thinner than the main PZT layer.

Abstract: An enhancement-mode N-channel and P-channel GaN device integration structure comprises a substrate, wherein an Al—N nucleating layer, an AlGaN buffer layer, a GaN channel layer and an AlGaN barrier layer are sequentially arranged on the substrate, and the AlGaN barrier layer and the GaN channel layer are divided by an isolation layer; a P-channel device is arranged on one side of the isolation layer and comprises a first P-GaN layer, a first GaN isolation layer and a first P+-GaN layer are sequentially arranged on the first P-GaN layer, a first source, a first gate and a first drain are arranged on the first P+-GaN layer, the first gate is inlaid in the first P+-GaN layer, and a gate dielectric layer is arranged between the first gate and the first P+-GaN layer; and an N-channel device is arranged on the other side of the isolation layer.

Abstract: A method for reflective index modulation based on intelligent reflecting surface, in which an IRS control unit is added into wireless communication system, and the data to be transmitted in a transmission is divided into two parts: a reflective domain data dr and a phase-amplitude domain data dc, the reflective domain data dr is transmitted through a wired connection to the IRS control unit to activate or deactivate each group of reflecting elements, the phase-amplitude domain data dc is modulated through traditional phase-amplitude domain modulation and transmitted to the IRS, the reflected signals contain the information of the reflective domain data dr, through the demodulating the baseband symbol ym,j, an estimated phase-amplitude modulation index m and an estimated reflective index j are obtained to recover the phase-amplitude domain data dc and the value of the reflective domain data dr respectively.

Abstract: A preparation method of conductive gallium oxide based on deep learning and vertical Bridgman growth method. The prediction method includes: obtaining a preparation data of the conductive gallium oxide single crystal, the preparation data includes a seed crystal data, an environmental data, a control data and a raw material data, and the raw material data includes a doping type data and a conductive doping concentration; preprocessing the preparation data to obtain a preprocessed preparation data; inputting the preprocessed preparation data into a trained neural network model, and obtaining a predicted property data corresponding to the conductive gallium oxide single crystal through the trained neural network model, the predicted property data includes a predicted carrier concentration.

Abstract: Provided are an air duct assembly and an integrated air conditioner, wherein, the air duct assembly includes a fixed shell and a rotating air duct body, a first air duct and a second air duct are formed in the rotating air duct body having a first position and a second position; when the rotating air duct body is in the first position, the indoor air inlet duct is connected with the indoor air outlet duct, the outdoor air inlet duct is connected with the outdoor air outlet duct, the indoor air inlet duct is disconnected from the outdoor air outlet duct and the outdoor air inlet duct; the indoor air outlet duct is disconnected from the outdoor air outlet duct and the outdoor air inlet duct; when in the second position, the indoor air inlet duct is connected with the first air duct and the outdoor air outlet duct to form a turbid wind exhaust duct, the indoor air outlet duct is connected with the second air duct and the outdoor air inlet duct to form a fresh air inlet duct, the turbid wind exhaust duct is separ

Abstract: An enhancement-mode N-channel and P-channel GaN device integration structure comprises a substrate, wherein an Al—N nucleating layer, an AlGaN buffer layer, a GaN channel layer and an AlGaN barrier layer are sequentially arranged on the substrate, and the AlGaN barrier layer and the GaN channel layer are divided by an isolation layer; a P-channel device is arranged on one side of the isolation layer and comprises a first P-GaN layer, a first GaN isolation layer and a first P+-GaN layer are sequentially arranged on the first P-GaN layer, a first source, a first gate and a first drain are arranged on the first P+-GaN layer, the first gate is inlaid in the first P+-GaN layer, and a gate dielectric layer is arranged between the first gate and the first P+-GaN layer; and an N-channel device is arranged on the other side of the isolation layer.

Abstract: In the monolithically integrated GaN-based half-bridge circuit, a nucleation layer, a buffer layer, a channel layer and a barrier layer are sequentially provided on a conductive substrate, the barrier layer and the channel layer are separated by isolation layers, and a diode, an integrated capacitor, a low-side transistor, a high-side transistor, a first integrated resistor and a second integrated resistor are provided. The half-bridge circuit includes: a low-side transistor and a high-side transistor, wherein a drain of the low-side transistor is connected to a source of the high-side transistor and also connected to an output terminal Vout, and a substrate of the low-side transistor is connected to a substrate of the high-side transistor, wherein a series resistor is connected in parallel to a drain of the high-side transistor and a source of the low-side transistor.

Abstract: The present application discloses a preparation method of high resistance gallium oxide based on deep learning and vertical Bridgman growth method. The prediction method comprises: obtaining a preparation data of the high resistance gallium oxide single crystal, the preparation data comprises a seed crystal data, an environmental data, a control data and a raw material data, and the raw material data comprises a doping type data and a doping concentration; preprocessing the preparation data to obtain a preprocessed preparation data; inputting the preprocessed preparation data into a trained neural network model, and obtaining a predicted property data corresponding to the high resistance gallium oxide single crystal through the trained neural network model, the predicted property data comprises a predicted resistivity.

Abstract: Disclosed are a computer-implemented method, a system and a computer program product for record management in a time series database (TSDB). In the computer-implemented method for record management in a TSDB, time series records can be obtained from distributed sources by one or more processing units. The records can be divided into different record groups based on a timestamp of each of the records by one or more processing units. The records in each of the record groups can be normalized into normalized records by one or more processing units. The normalized records can be stored in the TSDB by one or more processing units.

Abstract: An auxiliary mounting device and mounting method for a saddle-type window air conditioner. The auxiliary mounting device comprises a base and an airbag; the base is located on a window, an upper end of the airbag is connected to a connecting portion of the saddle-type window air conditioner, a lower end of the airbag is connected to the base), an air hole is provided on the airbag, and a plug is provided at the air hole. When mounting the saddle-type window air conditioner, the airbag is inflated first, and then the saddle-type window air conditioner, together with the base and the airbag, is placed on the window, the base sits on the window, then the airbag is deflated, and the connecting portion gradually descends, along with the deflation of the airbag, in the direction towards the base, thereby enabling the saddle-type window air conditioner to fall slowly. The auxiliary mounting device has a simple structure and is easy to operate.

Abstract: The present invention provides a sounding device having a frame, a vibration system, a magnetic circuit system, a front cover, a waterproof sealing ring and a waterproof and breathable spacer. The front cover includes a front cover body, a first through hole and a second through hole running through the front cover body, and a support wall of the front cover body. The waterproof and breathable spacer is fixed to the front cover body and completely covers the second through hole, the second through hole connects the front sound cavity with the back cavity. Compared with the related art, the sounding device of the to present invention is easy to assemble, has good waterproof performance, high reliability, and excellent acoustic performance.