Abstract: An electronic control unit is configured to operate an electric motor from a rechargeable battery pack. The control unit has a circuit board with electronic components for driving the electric motor. Furthermore, an electrical braking circuit having a braking resistor and also a braking switch is provided. The receiving surface of the circuit board is spatially divided into a first surface region and a second surface region. The first surface region serves to receive electronic components; the second surface region serves to receive the braking resistor, wherein the braking resistor is configured as a conductor track which is formed on the circuit board.

Abstract: An electronic control unit is configured to operate an electric motor from a rechargeable battery pack. The control unit has a circuit board with electronic components for driving the electric motor. Furthermore, an electrical braking circuit having a braking resistor and also a braking switch is provided. The receiving surface of the circuit board is spatially divided into a first surface region and a second surface region. The first surface region serves to receive electronic components; the second surface region serves to receive the braking resistor, wherein the braking resistor is configured as a conductor track which is formed on the circuit board.

Abstract: Disclosed herein is a device that includes first and second spaced-apart conductive pads positioned in a layer of insulating material, first and second under-bump metallization layers that are conductively coupled to the first and second conductive pads, respectively, and first and second spaced-apart conductive bumps that are conductively coupled to the first and second under-bump metallization layers, respectively. Additionally, the device includes, among other things, a passivation layer positioned above the layer of insulating material between the first and second spaced-apart conductive bumps, and a protective layer positioned on the passivation layer, wherein the protective layer extends between and contacts the first and second under-bump metallization layers, the material of the protective layer being one of silicon dioxide, silicon oxyfluoride (SiOF), silicon nitride (SiN), and silicone carbon nitride (SiCN).

Abstract: One illustrative method disclosed herein includes forming a conductive pad in a layer of insulating material, forming a passivation layer above the conductive pad, performing at least one etching process on the passivation layer to define an opening in the passivation layer that exposes at least a portion of the conductive pad, forming a protective layer on the passivation layer, in the opening and on the exposed portion of the conductive pad, forming a heat-curable material layer above the protective layer, performing an etching process to define a patterned heat-curable material layer having an opening that exposes a portion of the protective layer, performing an etching process on the protective layer to thereby expose at least a portion of the conductive pad and forming a conductive bump that is conductively coupled to the conductive pad.

Abstract: One illustrative method disclosed herein includes forming a conductive pad in a layer of insulating material, forming a passivation layer above the conductive pad, performing at least one etching process on the passivation layer to define an opening in the passivation layer that exposes at least a portion of the conductive pad, forming a protective layer on the passivation layer, in the opening and on the exposed portion of the conductive pad, forming a heat-curable material layer above the protective layer, performing an etching process to define a patterned heat-curable material layer having an opening that exposes a portion of the protective layer, performing an etching process on the protective layer to thereby expose at least a portion of the conductive pad and forming a conductive bump that is conductively coupled to the conductive pad.

Abstract: By directly forming an underbump metallization layer on a contact region of the last metallization layer, the formation of any other terminal metals, such as aluminum and corresponding adhesion/barrier layers, may be avoided. Consequently, the thermal and electrical behavior of the resulting bump structure may be improved, while process complexity may be significantly reduced.

Abstract: A process for producing doped semiconductor wafers from silicon, which contain an electrically active dopant, such as boron, phosphorus, arsenic or antimony, optionally are additionally doped with germanium and have a defined thermal conductivity, involves producing a single crystal from silicon and processing further to form semiconductor wafers, the thermal conductivity being established by selecting a concentration of the electrically active dopant and optionally a concentration of germanium. Semiconductor wafers produced from silicon by the process have specific properties with regard to thermal conductivity and resistivity.

Abstract: A process for producing doped semiconductor wafers from silicon, which contain an electrically active dopant, such as boron, phosphorus, arsenic or antimony, optionally are additionally doped with germanium and have a defined thermal conductivity, involves producing a single crystal from silicon and processing further to form semiconductor wafers, the thermal conductivity being established by selecting a concentration of the electrically active dopant and optionally a concentration of germanium. Semiconductor wafers produced from silicon by the process have specific properties with regard to thermal conductivity and resistivity.

Abstract: A method for avoiding the spontaneous ignition of combustible dusts in process off-gases, wherein during the process the dusts are retained, without adversely affecting the process parameters, at least one sintered filter element which is arranged in a pressure vessel and is able to withstand temperatures of up to at least 250° C. and after the process has ended the dusts are inerted by blasting oxygen-containing gas back into the pressure vessel, and to a device for carrying out the method.

Abstract: A method for avoiding the spontaneous ignition of combustible dusts in process off-gases, wherein during the process the dusts are retained, without adversely affecting the process parameters, at least one sintered filter element which is arranged in a pressure vessel and is able to withstand temperatures of up to at least 250° C. and after the process has ended the dusts are inerted by blasting oxygen-containing gas back into the pressure vessel, and to a device for carrying out the method.