Abstract: A nanostructure comprising germanium, including wires of less than 1 micron in diameter and walls of less than 1 micron in width, in contact with the substrate and extending outward from the substrate is provided along with a method of preparation.

Abstract: The present invention is related to a method for forming a structure that contains alternating first and second ferromagnetic layers of different material compositions. A substrate containing a supporting matrix with at least one open pore and a conductive base layer is first formed. Electroplating of the substrate is then carried out in an electroplating solution that contains at least one ferromagnetic metal element and one or more additional, different metal elements. A pulsed current with alternating high and low potentials is applied to the conductive base layer of the substrate structure to thereby form alternating ferromagnetic layers of different material compositions in the open pore of the supporting matrix.

Abstract: Methods for electrodepositing germanium on various semiconductor substrates such as Si, Ge, SiGe, and GaAs are provided. The electrodeposited germanium can be formed as a blanket or patterned film, and may be crystallized by solid phase epitaxy to the orientation of the underlying semiconductor substrate by subsequent annealing. These plated germanium layers may be used as the channel regions of high-mobility channel field effect transistors (FETs) in complementary metal oxide semiconductor (CMOS) circuits.

Abstract: The present invention is related to a method for forming vertical conductive structures by electroplating. Specifically, a template structure is first formed, which includes a substrate, a discrete metal contact pad located on the substrate surface, an inter-level dielectric (ILD) layer over both the discrete metal contact pad and the substrate, and a metal via structure extending through the ILD layer onto the discrete metal contact pad. Next, a vertical via is formed in the template structure, which extends through the ILD layer onto the discrete metal contact pad. A vertical conductive structure is then formed in the vertical via by electroplating, which is conducted by applying an electroplating current to the discrete metal contact pad through the metal via structure. Preferably, the template structure comprises multiple discrete metal contact pads, multiple metal via structures, and multiple vertical vias for formation of multiple vertical conductive structures.

Abstract: In one embodiment, the invention is a method and apparatus for chip cooling. One embodiment of an apparatus for cooling a heat-generating device includes an inlet for receiving a fluid, a manifold comprising a plurality of apertures formed therein for decreasing the pressure of the fluid from a first pressure by adiabatic expansion for impinging the fluid on the heat-generating device once the pressure of the fluid is decreased from the first pressure.

Abstract: The present invention is related to a method for forming vertical conductive structures by electroplating. Specifically, a template structure is first formed, which includes a substrate, a discrete metal contact pad located on the substrate surface, an inter-level dielectric (ILD) layer over both the discrete metal contact pad and the substrate, and a metal via structure extending through the ILD layer onto the discrete metal contact pad. Next, a vertical via is formed in the template structure, which extends through the ILD layer onto the discrete metal contact pad. A vertical conductive structure is then formed in the vertical via by electroplating, which is conducted by applying an electroplating current to the discrete metal contact pad through the metal via structure. Preferably, the template structure comprises multiple discrete metal contact pads, multiple metal via structures, and multiple vertical vias for formation of multiple vertical conductive structures.

Abstract: Stabilized metal gate electrode for complementary metal-oxide-semiconductor (“CMOS”) applications and methods of making the stabilized metal gate electrodes are disclosed. Specifically, the metal gate electrodes are stabilized by alloying wherein the alloy comprises a metal selected from the group consisting of Re, Ru, Pt, Rh, Ni, Al and combinations thereof and an element selected from the group consisting of W, V, Ti, Ta and combinations thereof.

Abstract: A memory storage device that contains alternating first and second ferromagnetic material layers is provided. Each first ferromagnetic material layer has a first layer thickness (L1) and a first critical current density (JC1), and each second ferromagnetic material layer has a second layer thickness (L2) and a second critical current density (JC2), provided that JC1<JC2, L1 is greater than about 300 nm, and L2 ranges from about 20 nm to about 200 nm. The device further comprises alternating magnetic domains of opposite directions that are separated by domain walls. The magnetic domains and domain walls are movable across the first and second ferromagnetic material layers upon application of a driving current. Correspondingly, data can be stored in the memory storage device as locations of the magnetic domains and domain walls.

Abstract: In one embodiment, the invention is a method and apparatus for chip cooling. One embodiment of a system for cooling a heat-generating device, such as a semiconductor chip, includes a vaporization chamber for at least partially vaporizing a stream of liquid in a stream of a gas to produce a mixture of gas, vapor and liquid and a heat sink coupled to the vaporization chamber for transferring heat from the heat-generating device to the mixture.

Abstract: Disclosed herein is a method of forming a nanostructure having nanowires by forming a mask with at least one opening on a surface of a substrate, to expose a portion of the surface of the substrate; depositing particles of a metal capable of catalyzing semiconductor nanowire growth on the exposed surface of the substrate by electroplating or electroless plating; and growing nanowires on the plated substrate with a precursor gas by a vapor-liquid-solid (VLS) process. Also disclosed is a nanostructure including nanowires prepared by the above method.

Abstract: Methods for electrodepositing germanium on various semiconductor substrates such as Si, Ge, SiGe, and GaAs are provided. The electrodeposited germanium can be formed as a blanket or patterned film, and may be crystallized by solid phase epitaxy to the orientation of the underlying semiconductor substrate by subsequent annealing. These plated germanium layers may be used as the channel regions of high-mobility channel field effect transistors (FETs) in complementary metal oxide semiconductor (CMOS) circuits.

Abstract: A memory storage device that contains alternating first and second ferromagnetic material layers is provided. Each first ferromagnetic material layer has a first layer thickness (L1) and a first critical current density (JC1), and each second ferromagnetic material layer has a second layer thickness (L2) and a second critical current density (JC2), provided that JC1<JC2, L1 is greater than about 300 nm, and L2 ranges from about 20 nm to about 200 nm. The device further comprises alternating magnetic domains of opposite directions that are separated by domain walls. The magnetic domains and domain walls are movable across the first and second ferromagnetic material layers upon application of a driving current. Correspondingly, data can be stored in the memory storage device as locations of the magnetic domains and domain walls.

Abstract: The present invention is related to a method for forming vertical conductive structures by electroplating. Specifically, a template structure is first formed, which includes a substrate, a discrete metal contact pad located on the substrate surface, an inter-level dielectric (ILD) layer over both the discrete metal contact pad and the substrate, and a metal via structure extending through the ILD layer onto the discrete metal contact pad. Next, a vertical via is formed in the template structure, which extends through the ILD layer onto the discrete metal contact pad. A vertical conductive structure is then formed in the vertical via by electroplating, which is conducted by applying an electroplating current to the discrete metal contact pad through the metal via structure. Preferably, the template structure comprises multiple discrete metal contact pads, multiple metal via structures, and multiple vertical vias for formation of multiple vertical conductive structures.

Abstract: A nanostructure comprising germanium, including wires of less than 1 micron in diameter and walls of less than 1 micron in width, in contact with the substrate and extending outward from the substrate is provided along with a method of preparation.

Abstract: The present invention is related to a method for forming a structure that contains alternating first and second ferromagnetic layers of different material compositions. A substrate containing a supporting matrix with at least one open pore and a conductive base layer is first formed. Electroplating of the substrate is then carried out in an electroplating solution that contains at least one ferromagnetic metal element and one or more additional, different metal elements. A pulsed current with alternating high and low potentials is applied to the conductive base layer of the substrate structure to thereby form alternating ferromagnetic layers of different material compositions in the open pore of the supporting matrix.

Abstract: A method and apparatus for extraction and re-implantation of a natural tooth, such tooth being cleaned and repaired while extracted. The crown of the repaired tooth is mechanically masked and the tooth is then mounted in a partitioned vacuum cavity wherein gradual application of vacuum is used to degas and dehydrate the tooth root. Following degassing and dehydration of the tooth root a mass of titanium is heated in the cavity partition, by way of an electron beam source, the energy output of the beam source being thereafter ramped up to vaporize the mass. The partition in the cavity is then opened to expose the root to the titanium vapor after which the tooth may be reinserted into the original void.

Abstract: Certain alloys of CoFeCu are provided in film and laminate form which have a unique combination of electromagnetic properties which enable them to be used as magnetic thin films in magnetic recording heads, shields and flux guides. The films and laminates thereof are electrodeposited from a plating bath in a DC or pulsed current electrodeposition process.

Abstract: In through-mask electroetching of a metal film on top of an insulating substrate, the shape of the metal film being etched is a function of the mask opening, the spacing between the openings and the thickness of the mask. An analysis of the electric field around the mask and the metal film is used to determine conditions leading to the formation of islands of unetched metal films within the openings. The analysis is then used to design the mask pattern and eliminate these islands. The increase in the ratio of the mask thickness to the opening width for eliminating the islands also lowers the undercutting of the mask. Premature stoppage of the electroetching process arising from the isolation of the sample film from the contact is also addressed. The electrical contact to the sample is made at one end and a nozzle jet of electrolyte is slowly swept from the far end of the sample towards the electrical contact.

Abstract: A fixture for supporting a workpiece in a processing cell includes a frame and cooperating workpiece holder. The frame includes a head having a hole therein which receives an integral plateau of the holder. The holder plateau includes an annular seal adjacent a perimeter thereof with a vacuum port disposed therein. The workpiece rests on the seal so that vacuum drawn in the vacuum port fixedly holds the workpiece against the plateau. Assembly of the holder plateau and workpiece thereon through the frame-head hole positions the workpiece coplanar with a front side of the frame. In exemplary embodiments, independent electrical current paths are provided to the workpiece and a surrounding auxiliary electrode.

Abstract: An electroplating cell includes a floor, ceiling, front wall, and back wall forming a box having first and second opposite open ends. A rack for supporting an article to be electroplated is removably positioned vertically to close the first open end and includes a thief laterally surrounding the article to define a cathode. An anode is positioned vertically to close the second open end, with the assembly defining a substantially closed, six-sided inner chamber for receiving an electrolyte therein for electroplating the article. The article and surrounding thief are coextensively aligned with the anode, with the floor, ceiling, front and back walls being effective for guiding electrical current flux between the cathode and the anode. In a preferred embodiment, the cell is disposed as an inner cell inside an outer cell substantially filled with the electrolyte, and a paddle is disposed inside the inner cell for agitating the electrolyte therein.