Abstract: Novel spatially-defined macrocyclic compounds containing specific conformational control elements are disclosed. Libraries of these macrocycles are then used to select one or more macrocycle species that exhibit a specific interaction with a particular biological target. In particular, compounds according to the invention are disclosed as agonists or antagonists of a mammalian motilin receptor and a mammalian ghrelin receptor.

Abstract: A cavity forming formed in an encapsulation structure under a vacuum in a vacuum chamber is sealed with a capping layer. A stiff protective layer under tensile stress is deposited on the capping layer prior to venting the vacuum chamber to atmospheric pressure. The capping layer is preferably aluminum or an aluminum alloy, and the protective layer is preferably ?-TiN having a suitable high Young's modulus.

Abstract: Novel spatially-defined macrocyclic compounds incorporating peptide bond surrogates are disclosed. Libraries of these macrocycles are then used to select one or more macrocycle species that exhibit a specific interaction with a particular biological target. In particular, compounds according to the invention are disclosed as agonists or antagonists of a mammalian motilin receptor and a mammalian ghrelin receptor.

Abstract: To deposit optical quality films by PECVD (Plasma Enhanced Chemical Vapor Deposition), a six-dimensional space wherein five dimensions thereof correspond to five respective independent variables of which a set of four independent variables relate to the flow-rate of respective gases, a fifth independent variable relates to total pressure, and a six dimension relates to observed FTIR characteristics is first created. Then an optical film is deposited while maintaining three of the set of four independent variables substantially constant as well as the fifth independent variable, and varying a fourth of the set of four independent variables to obtain desired characteristics in the sixth dimension.

Abstract: A library of macrocyclic compounds of the formula (I) where part (A) is a (CH2)y—NH— bivalent radical, a —(CH2)y— bivalent radical or a covalent bond; where part (B) is a (CH2)z—NH— bivalent radical, a —(CH2)z— bivalent radical, or a covalent bond; where part (C) is a (CH2)t—NH— bivalent radical, a —(CH2)t— bivalent radical, or a covalent bond; and where part (T) is a —Y-L-Z— radical wherein Y is CH2 or CO, Z is NH or O and L is a bivalent radical. These compounds are useful for carrying out screening assays or as intermediates for the synthesis of other compounds of pharmaceutical interest. A process for their preparation of these compounds in a combinatorial manner, is also disclosed.

Abstract: A process for making a integrated circuits of different typed is described wherein sequence of mask steps is applied to a substrate or epitaxial layer of p-type material. The sequence is chosen from a predefined common set of mask steps according to the particular type of integrated circuit to be fabricated. In this way, various types of integrated circuit can be fabricated in a most efficient manner.

Abstract: In a method of fabricating a microstructure for micro-fluidics applications, a mechanically stable support layer is formed over a layer of etchable material. An anisotropic etch is preformed through a mask to form a pattern of holes extending through the support layer into said etchable material. An isotropic etch is performed through each said hole to form a corresponding cavity in the etchable material under each hole and extending under the support layer. A further layer of depositable material is formed over the support layer until portions of the depositable layer overhanging each said hole meet and thereby close the cavity formed under each hole. The invention permits the formation of micro-channels and filters of varying configuration.

Abstract: A micro-electro-mechanical (MEM) device and an electronic device are fabricated on a common substrate by fabricating the electronic device comprising a plurality of electronic components on the common substrate, depositing a thermally stable interconnect layer on the electronic device, encapsulating the interconnected electronic device with a protective layer, forming a sacrificial layer over the protective layer, opening holes in the sacrificial layer and the protective layer to allow the connection of the MEM device to the electronic device, fabricating the MEM device by depositing and patterning at least one layer of amorphous silicon, and removing at least a portion of the sacrificial layer. In this way, the MEM device can be fabricated after the electronic device on the same substrate.

Abstract: A method for making an integrated photonic device involves depositing buffer, core and cladding layers on the front side of a wafer. A thick tensile stress layer is deposited on the back side of the wafer just prior to performing a high temperature thermal treatment above 600° C. on the cladding layer to prevent the cracking of the layers as a result of the thermal treatment.

Abstract: A method is disclosed for making a device having one or more deposited layers and subject to a post deposition high temperature anneal. Opposing films having similar mechanical properties are deposited on the front and back faces of a wafer, which is subsequently subjected a high temperature anneal. The opposing films tend to cancel out stress-induced warping of the wafer during the subsequent anneal.

Abstract: A method is disclosed for fabricating a integrated device, such as a MEMS device. A first wafer is provided on an exposed surface with a layer of gold, gold alloy or gold compound. A second wafer is provided on its exposed surface with under-layer of gold, gold alloy or gold compound; and an over- of bismuth, bismuth alloy, a compound of bismuth, cadmium, cadmium alloy, a compound of cadmium compound, tin, tin alloy, or a compound of tin. The wafers are then brought into contact and bonded at their surfaces through the deposited layers.

Abstract: A method is disclosed for depositing an optical quality silica film on a wafer by PECVD. The flows rates for a raw material gas, an oxidation gas, a carrier gas, and a dopant gas are first set at predetermined levels. The total deposition pressure is set at a predetermined level. The deposited film is then subjected to a post deposition heat treatment at a temperature selected to optimize the mechanical properties without affecting the optical properties. Finally, the observed FTIR characteristics of the deposited film are monitored to produce a film having the desired optical and mechanical properties. This technique permits the production of high quality optical films with reduced stress.

Abstract: A method of making an etched structure in the fabrication of a MEMS device involves depositing a bulk layer, typically of polysilicon, prone to surface roughness. At least one layer of photo-insensitive spin-on planarizing material, such as silicate-based spin-on glass, is formed on the bulk layer to reduce surface roughness. This is patterned with a photoresist layer. A deep etch is then performed through the photoresist layer into the bulk layer. This technique results in much more precise etch structures.

Abstract: A method of making highly reflective mirrors on a wafer in the manufacture of photonic devices involves preheating a wafer to remove adsorbed volatile contaminants at a temperature between about 300 and 600° C. The wafer surface is etched at a temperature between about 300 and 600° C. to remove absorbed and chemically absorbed contaminants in the presence of a plasma to prevent poisoning. The wafer surface is thoroughly cooled so as to as reduce the surface mobility of the impinging atoms during the subsequent metallic deposition. A deposition is then carried out on the cooled wafer of a gettering layer for gettering hydrogen, oxygen and nitrogen. A metallic reflective layer is then deposited in a deposition chamber, and finally the wafer is removed from the deposition chamber to prevent excessive bulk oxidation.

Abstract: A cavity forming formed in an encapsulation structure under a vacuum in a vacuum chamber is sealed with a capping layer. A stiff protective layer under tensile stress is deposited on the capping layer prior to venting the vacuum chamber to atmospheric pressure. The capping layer is preferably aluminum or an aluminum alloy, and the protective layer is preferably &dgr;-TiN having a suitable high Young's modulus.

Abstract: A competitive, simple, single-substrate wafer-level packaging technique capable of creating a vacuum-sealed protective cavity around moving or other particular components of a MEMS is described. The technique uses common semiconductor materials, processing steps and equipment to provide a stable vacuum environment of, for example less than 1 Pa, in a sealed cavity. The environment protects components of the MEMS against micro-contamination from particles and slurry of a waver dicing process and against fluctuations of atmospheric condition to ensure long term reliability.

Abstract: A method of making a photonic device having at least two layers formed over a substrate, preferably by plasma enhanced chemical vapor deposition, involves depositing a thin spin-on glass (SOG) interlayer between at least one adjacent pair of layers to improve the roughness characteristics.

Abstract: In a method of fabricating a microstructure for microfluidics applications, a first layer of etchable material is formed on a suitable substrate. A mechanically stable support layer is formed over the etchable material. A mask is applied over the support to expose at least one opening in the mask. An anistropic etch is then performed through the opening to create a bore extending through the support layer to said layer of etchable material. After performing an isotropic etch through the bore to form a microchannel in the etchable material extending under the support layer, a further layer is deposited over the support layer until overhanging portions meet and thereby close the microchannel formed under the opening.

Abstract: A method is disclosed for making an integrated photonic device having buffer, core and cladding layers deposited on the front side of a wafer. A thick tensile stress layer is deposited on the back side of the wafer just prior to performing a high temperature thermal treatment above 600° C. on the cladding layer to prevent the cracking of the layers as a result of the thermal treatment.

Abstract: A method of making highly reflective mirrors on a wafer in the manufacture of photonic devices involves preheating a wafer to remove adsorbed volatile contaminants at a temperature between about 300 and 600° C. The wafer surface is etched at a temperature between about 300 and 600° C. to remove absorbed and chemically absorbed contaminants in the presence of a plasma to prevent poisoning. The wafer surface is thoroughly cooled so as to as reduce the surface mobility of the impinging atoms during the subsequent metallic deposition. A deposition is then carried out on the cooled wafer of a gettering layer for gettering hydrogen, oxygen and nitrogen. A metallic reflective layer is then deposited in a deposition chamber, and finally the wafer is removed from the deposition chamber to prevent excessive bulk oxidation.