Abstract: Apparatuses and methods for providing data to a configurable storage area are disclosed herein. An example apparatus may include an extended address register including a plurality of configuration bits indicative of an offset and a size, an array having a storage area, a size and offset of the storage area based, at least in part, on the plurality of configuration bits, and a buffer configured to store data, the data including data intended to be stored in the storage area. A memory control unit may be coupled to the buffer and configured to cause the buffer to store the data intended to be stored in the storage area in the storage area of the array responsive, at least in part, to a flush command.

Abstract: Apparatuses and methods for providing data from a buffer are disclosed herein. An example apparatus may include an array, a buffer, and a memory control unit. The buffer may be coupled to the array and configured to store data. The memory control unit may be coupled to the array and the buffer. The memory control unit may be configured to cause the buffer to store the data responsive, at least in part, to a first write command and may further be configured to cause the buffer to store the data in the array responsive, at least in part, to a flush command. The memory control unit may further be configured to interrupt the flush command to prepare for a read command or a second write command and resume the flush command once the read command or the second write command is performed.

Abstract: Apparatuses and methods for providing data from a buffer are disclosed herein. An example apparatus may include an array, a buffer, and a memory control unit. The buffer may be coupled to the array and configured to store data. The memory control unit may be coupled to the array and the buffer. The memory control unit may be configured to cause the buffer to store the data responsive, at least in part, to a first write command and may further be configured to cause the buffer to store the data in the array responsive, at least in part, to a flush command. The memory control unit may further be configured to interrupt the flush command to prepare for a read command or a second write command and resume the flush command once the read command or the second write command is performed.

Abstract: Subject matter disclosed herein relates to performing concurrent memory operations.

Abstract: Apparatuses and methods for providing data from a buffer are disclosed herein. An example apparatus may include an array, a buffer, and a memory control unit. The buffer may be coupled to the array and configured to store data. The data may include data intended to be stored in the storage area. The memory control unit may be coupled to the array and the buffer. The memory control unit may be configured to cause the buffer to store the data responsive, at least in part, to a write command and may further be configured to cause the buffer to store the data intended to be stored in the storage area in the storage area of the array responsive, at least in part, to a flush command.

Abstract: Apparatuses and methods for commands to perform wear leveling operations are described herein. An example apparatus may include a memory configured to receive a wear leveling command and to perform a wear leveling operation responsive to the wear leveling command. The memory may further be configured to recommend a wear leveling command be provided to the memory responsive to a global write count exceeding a threshold. The global write count may be indicative of a number of write operations performed by the memory since the memory performed a wear leveling operation.

Abstract: Methods and apparatuses are disclosed for executing a plurality of queued tasks in a memory. One example apparatus includes a memory configured to be coupled to a host. The memory is also configured to receive a plurality of memory access requests, a status request, and an execution command from the host, and to execute one or more of the plurality of memory access requests responsive to the execution command from the host. The execution command includes a plurality of respective indications that correspond to each respective memory access request of the plurality of memory access requests and that indicate whether the host is requesting the memory to execute each respective memory access request.

Abstract: Methods and apparatuses are disclosed for requesting ready status information from a memory. One example apparatus includes a memory and a host coupled to the memory. The host is configured to provide a plurality of memory access requests to the memory, to request ready status information regarding whether the memory is ready to execute a memory access request of the plurality of memory access requests, and to request execution of the memory access request responsive to the ready status information.

Abstract: Apparatuses and methods for providing data from a buffer are disclosed herein. An example apparatus may include an array, a buffer, and a memory control unit. The buffer may be coupled to the array and configured to store data. The data may include data intended to be stored in the storage area. The memory control unit may be coupled to the array and the buffer. The memory control unit may be configured to cause the buffer to store the data responsive, at least in part, to a write command and may further be configured to cause the buffer to store the data intended to be stored in the storage area in the storage area of the array responsive, at least in part, to a flush command.

Abstract: Apparatuses and methods for providing data to a configurable storage area are disclosed herein. An example apparatus may include an extended address register including a plurality of configuration bits indicative of an offset and a size, an array having a storage area, a size and offset of the storage area based, at least in part, on the plurality of configuration bits, and a buffer configured to store data, the data including data intended to be stored in the storage area. A memory control unit may be coupled to the buffer and configured to cause the buffer to store the data intended to be stored in the storage area in the storage area of the array responsive, at least in part, to a flush command.

Abstract: Apparatuses and methods for variable latency memory operations are disclosed herein. An example apparatus may include a memory configured to receive an activate command indicative of a type of a command during a first addressing phase and to receive the command during a second addressing phase. The memory may further be configured to provide information indicating that the memory is not available to perform a command responsive, at least in part, to receiving the command during a variable latency period and to provide information indicating that the memory is available to perform a command responsive, at least in part, to receiving the command after the variable latency period.

Abstract: Subject matter disclosed herein relates to performing concurrent memory operations.

Abstract: Apparatuses and methods for performing memory operations are described. In an example apparatus, a memory is configured to receive a memory instruction and perform a memory operation responsive to the memory instruction. The memory is further configured to provide an acknowledgement indicative of an end of the variable latency period wherein the acknowledgement includes information related to an acceptance of a memory instruction. Data associated with the memory instruction is exchanged with the memory following the acknowledgement. In an example method a read instruction and an address from which read data is to be read is received. A write operation is suspended responsive to the read instruction and an acknowledgement indicative of an end of the variable latency period is provided. Read data for the read instruction is provided and the write operation is continued to be suspended for a hold-off period following completion of the read operation.

Abstract: Apparatuses and methods for performing memory operations are described. An example apparatus includes a memory operation controller. The memory operation controller is configured to receive memory instructions and decode the same to provide internal signals for performing memory operations for the memory instructions. The memory operation controller is further configured to provide information indicative of a time for a variable latency period of a memory instruction during the variable latency period. In an example method, a write instruction and an address to which write data is to be written is received at a memory and an acknowledgement indicative of an end of a variable latency period for the write instruction is provided. After waiting a variable bus turnaround after the acknowledgement, write data for the write instruction is received.

Abstract: Subject matter disclosed herein relates to performing concurrent memory operations.

Abstract: A method includes determining that a received data stream includes metadata and content, applying error control coding to the received metadata, disabling error control coding for the received content, and storing the metadata, the error control coding, and the content in a memory device.

Abstract: A method includes determining that a received data stream includes metadata and content, applying error control coding to the received metadata, disabling error control coding for the received content, and storing the metadata, the error control coding, and the content in a memory device.

Abstract: Subject matter disclosed herein relates to performing concurrent memory operations.

Abstract: A method includes determining that a received data stream includes metadata and content, applying error control coding to the received metadata, disabling error control coding for the received content, and storing the metadata, the error control coding, and the content in a memory device.

Abstract: An embodiment of a non-volatile memory device is proposed. Said memory device comprises a matrix of memory cells; each memory cell is individually programmable to at least a first logic level and individually erasable to a second logic level. The memory device further comprises partition means for logically subdividing the matrix into a plurality of subspaces; each subspace comprises at least one respective memory cell. The memory device further comprises selection means for selecting a subspace, operative means for performing an operation on all the memory cells of the selected subspace, and means for dynamically modifying the number of subspaces and/or the number of memory cells included in each subspace.