Patents by Inventor Ludovic Godet

Ludovic Godet has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190318957
    Abstract: Systems and methods herein are related to the formation of optical devices including stacked optical element layers using silicon wafers, glass, or devices as substrates. The optical elements discussed herein can be fabricated on temporary or permanent substrates. In some examples, the optical devices are fabricated to include transparent substrates or devices including charge-coupled devices (CCD), or complementary metal-oxide semiconductor (CMOS) image sensors, light-emitting diodes (LED), a micro-LED (uLED) display, organic light-emitting diode (OLED) or vertical-cavity surface-emitting laser (VCSELs). The optical elements can have interlayers formed in between optical element layers, where the interlayers can range in thickness from 1 nm to 3 mm.
    Type: Application
    Filed: February 22, 2019
    Publication date: October 17, 2019
    Inventors: Ludovic GODET, Wayne MCMILLAN, Rutger MEYER TIMMERMAN THIJSSEN, Naamah ARGAMAN, Tapashree ROY, Sage DOSHAY
  • Publication number: 20190301009
    Abstract: Embodiments described herein relate to apparatus and methods for processing a substrate. In one embodiment, a cluster tool apparatus is provided having a transfer chamber and a pre-clean chamber, a self-assembled monolayer (SAM) deposition chamber, an atomic layer deposition (ALD) chamber, and a post-processing chamber disposed about the transfer chamber. A substrate may be processed by the cluster tool and transferred between the pre-clean chamber, the SAM deposition chamber, the ALD chamber, and the post-processing chamber. Transfer of the substrate between each of the chambers may be facilitated by the transfer chamber which houses a transfer robot.
    Type: Application
    Filed: June 6, 2019
    Publication date: October 3, 2019
    Inventors: Tobin KAUFMAN-OSBORN, Srinivas D. NEMANI, Ludovic GODET, Qiwei LIANG, Adib KHAN
  • Publication number: 20190278005
    Abstract: Embodiments herein describe a sub-micron 3D diffractive optics element and a method for forming the sub-micron 3D diffractive optics element. In a first embodiment, a method is provided for forming a sub-micron 3D diffractive optics element on a substrate without planarization. The method includes depositing a material stack to be patterned on a substrate, depositing and patterning a thick mask material on a portion of the material stack, etching the material stack down one level, trimming a side portion of the thick mask material, etching the material stack down one more level, repeating trim and etch steps above ā€˜nā€™ times, and stripping the thick mask material from the material stack.
    Type: Application
    Filed: March 5, 2019
    Publication date: September 12, 2019
    Inventors: Michael Yu-tak YOUNG, Ludovic GODET, Robert Jan VISSER, Naamah ARGAMAN, Christopher Dennis BENCHER, Wayne MCMILLAN
  • Patent number: 10401742
    Abstract: Implementations described herein relate to apparatus for post exposure processing. More specifically, implementations described herein relate to field-guided post exposure process chambers and cool down/development chambers used on process platforms. In one implementation, a plurality of post exposure process chamber and cool/down development chamber pairs are positioned on a process platform in a stacked arrangement and utilize a shared plumbing module. In another implementation, a plurality of post exposure process chamber and cool down/development chambers are positioned on a process platform in a linear arrangement and each of the chambers utilize an individually dedicated plumbing module.
    Type: Grant
    Filed: April 6, 2018
    Date of Patent: September 3, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Viachslav Babayan, Ludovic Godet, Kyle M. Hanson, Robert B. Moore
  • Publication number: 20190259648
    Abstract: Embodiments described herein relate to a substrate chucking apparatus having a plurality of cavities formed therein. The cavities are formed in a body of the chucking apparatus. In one embodiment, a first plurality of ports are formed in a chucking surface of the body and extend to a bottom surface of the body. In another embodiment, a second plurality of ports are formed in a bottom surface of the plurality of cavities and extend through the body to a bottom surface of the body.
    Type: Application
    Filed: January 29, 2019
    Publication date: August 22, 2019
    Inventors: Joseph YUDOVSKY, Visweswaren SIVARAMAKRISHNAN, Ludovic GODET, Rutger Meyer TIMMERMAN THIJSSEN
  • Patent number: 10377665
    Abstract: Embodiments of the disclosure provide an apparatus and methods for localized stress modulation for overlay and substrate distortion using electron or ion implantation directly to a glass substrate. In one embodiment, a process for modifying a bulk property of a glass substrate generally includes identifying a stress pattern of a glass substrate, determining doping parameters to correct a defect (e.g., overlay error or substrate distortion) based on the stress pattern, and providing a treatment recipe to a treatment tool, wherein the treatment recipe is formulated according to the doping parameters. The process may further include performing a doping treatment process on the glass substrate using the treatment recipe to correct the overlay error or substrate distortion. In some embodiments, the treatment recipe is determined by comparing the stress pattern with a database library containing data correlating stress changes in glass substrates to various doping parameters.
    Type: Grant
    Filed: January 14, 2016
    Date of Patent: August 13, 2019
    Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Joseph C. Olson, Ludovic Godet, Gary Dickerson
  • Patent number: 10358715
    Abstract: Embodiments described herein relate to apparatus and methods for processing a substrate. In one embodiment, a cluster tool apparatus is provided having a transfer chamber and a pre-clean chamber, a self-assembled monolayer (SAM) deposition chamber, an atomic layer deposition (ALD) chamber, and a post-processing chamber disposed about the transfer chamber. A substrate may be processed by the cluster tool and transferred between the pre-clean chamber, the SAM deposition chamber, the ALD chamber, and the post-processing chamber. Transfer of the substrate between each of the chambers may be facilitated by the transfer chamber which houses a transfer robot.
    Type: Grant
    Filed: June 3, 2016
    Date of Patent: July 23, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Tobin Kaufman-Osborn, Srinivas D. Nemani, Ludovic Godet, Qiwei Liang, Adib Khan
  • Publication number: 20190186046
    Abstract: Embodiments described herein generally relate to biomedical devices including a porous layer forming a support structure for a biological probe and methods of making the same. The porous layer can be a porous silicon containing layer. The pore size can be adjusted such that various size biological probes can be incorporated into the pores. Further, the porous silicon containing layer can be used to support a biofunctionalizing layer.
    Type: Application
    Filed: December 21, 2018
    Publication date: June 20, 2019
    Inventors: Sangmin JEONG, Hann-Ching CHAO, Ludovic GODET
  • Publication number: 20190187563
    Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.
    Type: Application
    Filed: February 11, 2019
    Publication date: June 20, 2019
    Inventors: Viachslav BABAYAN, Douglas A. BUCHBERGER, JR., Qiwei LIANG, Ludovic GODET, Srinivas D. NEMANI, Daniel J. WOODRUFF, Randy HARRIS, Robert B. MOORE
  • Publication number: 20190172686
    Abstract: Methods and apparatus for forming a metal silicide as nanowires for back-end interconnection structures for semiconductor applications are provided. In one embodiment, the method includes forming a metal silicide layer on a substrate by a chemical vapor deposition process or a physical vapor deposition process, thermal treating the metal silicide layer in a processing chamber, applying a microwave power in the processing chamber while thermal treating the metal silicide layer; and maintaining a substrate temperature less than 400 degrees Celsius while thermal treating the metal silicide layer. In another embodiment, a method includes supplying a deposition gas mixture including at least a metal containing precursor and a reacting gas on a surface of a substrate, forming a plasma in the presence of the deposition gas mixture by exposure to microwave power, exposing the plasma to light radiation, and forming a metal silicide layer on the substrate from the deposition gas.
    Type: Application
    Filed: January 17, 2019
    Publication date: June 6, 2019
    Inventors: Bencherki MEBARKI, Annamalai LAKSHMANAN, Kaushal K. SINGH, Andrew COCKBURN, Ludovic GODET, Paul F. MA, Mehul B. NAIK
  • Publication number: 20190157134
    Abstract: Methods for seam-less gapfill comprising sequentially depositing a film with a seam, reducing the height of the film to remove the seam and repeating until a seam-less film is formed. Some embodiments include optional film doping and film treatment (e.g., ion implantation and annealing).
    Type: Application
    Filed: January 28, 2019
    Publication date: May 23, 2019
    Inventors: Pramit Manna, Ludovic Godet, Rui Cheng, Erica Chen, Ziqing Duan, Abhijit Basu Mallick, Srinivas Gandikota
  • Publication number: 20190148208
    Abstract: Embodiments described herein relate to a substrate chucking apparatus having a plurality of cavities formed therein. The cavities are formed in a body of the chucking apparatus and a plurality of support elements extend from the body and separate each of the plurality of cavities. In one embodiment, a first plurality of ports are formed in a top surface of the body and extend to a bottom surface of the body through one or more of the plurality of support elements. In another embodiment, a second plurality of ports are formed in a bottom surface of the plurality of cavities and extend through the body to a bottom surface of the body. In yet another embodiment, a first electrode assembly is disposed adjacent the top surface of the body within each of the plurality of support elements and a second electrode assembly is disposed within the body adjacent each of the plurality of cavities.
    Type: Application
    Filed: November 8, 2018
    Publication date: May 16, 2019
    Inventors: Ludovic GODET, Rutger MEYER TIMMERMAN THIJSSEN
  • Patent number: 10276369
    Abstract: Ion species are supplied to a workpiece comprising a pattern layer over a substrate. A material layer is deposited on the pattern layer using an implantation process of the ion species. In one embodiment, the deposited material layer has an etch selectivity to the pattern layer. In one embodiment, a trench is formed on the pattern layer. The trench comprises a bottom and a sidewall. The material layer is deposited into the trench using the ion implantation process. The material layer is deposited on the bottom of the trench in a direction along the sidewall.
    Type: Grant
    Filed: December 4, 2017
    Date of Patent: April 30, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Jun Xue, Ludovic Godet, Martin A. Hilkene, Matthew D. Scotney-Castle
  • Patent number: 10204764
    Abstract: Methods and apparatus for forming a metal silicide as nanowires for back-end interconnection structures for semiconductor applications are provided. In one embodiment, the method includes forming a metal silicide layer on a substrate by a chemical vapor deposition process or a physical vapor deposition process, thermal treating the metal silicide layer in a processing chamber, applying a microwave power in the processing chamber while thermal treating the metal silicide layer; and maintaining a substrate temperature less than 400 degrees Celsius while thermal treating the metal silicide layer. In another embodiment, a method includes supplying a deposition gas mixture including at least a metal containing precursor and a reacting gas on a surface of a substrate, forming a plasma in the presence of the deposition gas mixture by exposure to microwave power, exposing the plasma to light radiation, and forming a metal silicide layer on the substrate from the deposition gas.
    Type: Grant
    Filed: October 28, 2014
    Date of Patent: February 12, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Bencherki Mebarki, Annamalai Lakshmanan, Kaushal K. Singh, Andrew Cockburn, Ludovic Godet, Paul F. Ma, Mehul Naik
  • Patent number: 10203604
    Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.
    Type: Grant
    Filed: January 6, 2016
    Date of Patent: February 12, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Viachslav Babayan, Douglas A. Buchberger, Jr., Qiwei Liang, Ludovic Godet, Srinivas D. Nemani, Daniel J. Woodruff, Randy Harris, Robert B. Moore
  • Patent number: 10192775
    Abstract: Methods for seam-less gapfill comprising sequentially depositing a film with a seam, reducing the height of the film to remove the seam and repeating until a seam-less film is formed. Some embodiments include optional film doping and film treatment (e.g., ion implantation and annealing).
    Type: Grant
    Filed: March 17, 2017
    Date of Patent: January 29, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Pramit Manna, Ludovic Godet, Rui Cheng, Erica Chen, Ziqing Duan, Abhijit Basu Mallick, Srinivas Gandikota
  • Patent number: 10167574
    Abstract: Embodiments described herein generally relate to biomedical devices including a porous layer forming a support structure for a biological probe and methods of making the same. The porous layer can be a porous silicon containing layer. The pore size can be adjusted such that various size biological probes can be incorporated into the pores. Further, the porous silicon containing layer can be used to support a biofunctionalizing layer.
    Type: Grant
    Filed: December 19, 2014
    Date of Patent: January 1, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Sangmin Jeong, Hann-Ching Chao, Ludovic Godet
  • Publication number: 20180366318
    Abstract: Methods for depositing desired materials formed on different locations of a substrate with different materials using a selective deposition process for semiconductor applications are provided. In one embodiment, a method of forming a structure with desired materials on a substrate includes disposing organic materials on a surface of a substrate, performing a thermal treatment process to form polymer brush materials from the organic materials selective on a first region of the substrate, and selectively forming a material layer on a second region of the substrate uncovered by the polymer brush materials.
    Type: Application
    Filed: June 15, 2017
    Publication date: December 20, 2018
    Inventors: Christine Y. OUYANG, Ludovic GODET
  • Publication number: 20180366317
    Abstract: Methods of depositing a film selectively onto a first material relative to a second material are described. The substrate is pre-cleaned by heating the substrate to a first temperature, cleaning contaminants from the substrate and activating the first surface to promote formation of a self-assembled monolayer (SAM) on the first material. A SAM is formed on the first material by repeated cycles of SAM molecule exposure, heating and reactivation of the first material. A final exposure to the SAM molecules is performed prior to selectively depositing a film on the second material. Apparatus to perform the selective deposition are also described.
    Type: Application
    Filed: June 14, 2018
    Publication date: December 20, 2018
    Inventors: Chang Ke, Lei Zhou, Biao Liu, Cheng Pan, Yuanhong Guo, Liqi Wu, Michael S. Jackson, Ludovic Godet, Tobin Kaufman-Osborn, Erica Chen, Paul F. Ma
  • Patent number: 10157740
    Abstract: Methods for depositing desired materials formed on different locations of a substrate with different materials using a selective deposition process for semiconductor applications are provided. In one embodiment, a method of forming a structure with desired materials on a substrate includes disposing organic materials on a surface of a substrate, performing a thermal treatment process to form polymer brush materials from the organic materials selective on a first region of the substrate, and selectively forming a material layer on a second region of the substrate uncovered by the polymer brush materials.
    Type: Grant
    Filed: June 15, 2017
    Date of Patent: December 18, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Christine Y. Ouyang, Ludovic Godet