Patents by Inventor Ludovic Goux
Ludovic Goux has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8232174Abstract: The present disclosure provides a method for controlled formation of the resistive switching layer in a resistive switching device. The method comprises providing a substrate (2) comprising the bottom electrode (10), providing on the substrate a dielectric layer (4) comprising a recess (7) containing the metal for forming the resistive layer (11), providing on the substrate a dielectric layer (5) comprising an opening (8) exposing the metal of the recess, and forming the resistive layer in the recess and in the opening.Type: GrantFiled: August 31, 2007Date of Patent: July 31, 2012Assignees: NXP B.V., IMECInventors: Ludovic Goux, Dirk Wouters
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Patent number: 8206995Abstract: A method for manufacturing a resistive switching memory device comprises providing a substrate comprising an electrical contact, providing on the substrate a dielectric layer comprising a trench exposing the electrical contact, and providing in the trench at least the bottom electrode and the resistive switching element of the resistive memory device. The method may furthermore comprise providing a top electrode at least on or in the trench, in contact with the resistive switching element. The present invention also provides corresponding resistive switching memory devices.Type: GrantFiled: December 4, 2009Date of Patent: June 26, 2012Assignee: IMECInventors: Judit Gloria Lisoni Reyes, Ludovic Goux, Dirk Wouters
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Patent number: 8008644Abstract: A phase-change-memory cell is provided which comprises two insulated regions formed in a first phase-change material connected by a region formed in a second phase-change material. The crystallization temperature of the second phase-change material is below the crystallization temperature of the first phase-change material. By locally changing the material properties using a second PCM material, which switches phase at a lower temperature, a localized “hot spot” is obtained.Type: GrantFiled: May 18, 2006Date of Patent: August 30, 2011Assignee: NXP B.V.Inventors: Ludovic Goux, Dirk Wouters, Judit Lisoni, Thomas Gille
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Patent number: 7960775Abstract: The present disclosure is related to non-volatile memory devices comprising a reversible resistivity-switching layer used for storing data. The resistivity of this layer can be varied between at least two stable resistivity states such that at least one bit can be stored therein. In particular this resistivity-switching layer is a metal oxide or a metal nitride. A resistivity-switching non-volatile memory element includes a resistivity-switching metal-oxide layer sandwiched between a top electrode and a bottom electrode. The resistivity-switching metal-oxide layer has a gradient of oxygen over its thickness. The gradient is formed in a thermal oxidation step. Set and reset voltages can be tuned by using different oxygen gradients.Type: GrantFiled: November 7, 2008Date of Patent: June 14, 2011Assignees: IMEC, University of South Toulon VARInventors: Lorene Courtade, Judit Lisoni Reyes, Ludovic Goux, Christian Turquat, Christophe Muller, Dirk Wouters
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Publication number: 20110080781Abstract: The present invention relates to a phase change memory device comprising a plurality of phase change memory cells, each cell comprising a phase change material (50) conductively coupled between a first electrode (44) and a second electrode (42) for applying a reset current pulse having a predefined polarity to the phase change material in a programming cycle of the phase change memory device; and a controller (70) coupled to the first electrode and the second electrode for reversing the polarity of the reset current pulse to be applied in a next number of programming cycles to the corresponding cell after the application of a first number of programming cycles to the corresponding cell. The present invention further relates to a method for controlling such a memory device.Type: ApplicationFiled: June 9, 2009Publication date: April 7, 2011Applicants: NXP B.V., INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZWInventor: Ludovic Goux
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Patent number: 7897952Abstract: A phase-change-material memory cell is provided. The cell comprises at least one patterned layer of a phase-change material, and is characterized in that this patterned layer comprises at least two regions having different resistivities. If the resistivity of the phase-change material is higher in a well-defined area with limited dimensions (“hot spot”) than outside this area, then, for a given current flow between the electrodes, advantageously more Joule heat will be generated within this area compared to the area of the phase-change material where the resistivity is lower.Type: GrantFiled: May 18, 2006Date of Patent: March 1, 2011Assignee: NXP B.V.Inventors: Dirk Wouters, Ludovic Goux, Judith Lisoni, Thomas Gille
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Publication number: 20110044089Abstract: A resistive switching non-volatile memory element is disclosed comprising a resistive switching metal-oxide layer sandwiched between and in contact with a top electrode and a bottom electrode, the resistive switching metal oxide layer having a substantial isotropic non-stoichiometric metal-to-oxygen ratio. For example, the memory element may comprise a nickel oxide resistive switching layer sandwiched between and in contact with a nickel top electrode and a nickel bottom electrode whereby the ratio oxygen-to-nickel of the nickel oxide layer is between 0 and 0.85.Type: ApplicationFiled: June 2, 2010Publication date: February 24, 2011Applicant: IMECInventors: Ludovic Goux, Judit Lisoni Reyes, Dirk Wouters
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Patent number: 7883906Abstract: The use of a conductive bidimensional perovskite as an interface between a silicon, metal, or amorphous oxide substrate and an insulating perovskite deposited by epitaxy, as well as an integrated circuit and its manufacturing process comprising a layer of an insulating perovskite deposited by epitaxy to form the dielectric of capacitive elements having at least an electrode formed of a conductive bidimensional perovskite forming an interface between said dielectric and an underlying silicon, metal, or amorphous oxide substrate.Type: GrantFiled: March 3, 2010Date of Patent: February 8, 2011Assignees: STMicroelectronics S.A., Universite Francois RabelaisInventors: Ludovic Goux, Monique Gervais
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Publication number: 20100202193Abstract: A memory device comprises an array of memory cells for storing data and a voltage application unit for applying voltages to the cells for writing data to the cells. Each memory cell has a first layer comprising copper in contact with a second layer comprising a chalcogenide material. The voltage application unit is arranged to write data by switching each cell between a first resistance state and a second, lower, resistance state. The voltage application unit is arranged to switch a cell to the first resistance state by applying a potential difference across the first and second layers such that the potential at the first layer is higher than the potential at the second layer by 0.5 volts or less. The voltage application unit is arranged to switch a cell to the second resistance state by applying a potential difference across the first and second layers such that the potential at the second layer is higher than the potential at the first layer by 0.5 volts or less.Type: ApplicationFiled: April 30, 2008Publication date: August 12, 2010Applicants: NXP B.V., TERUNIVERSITAR MICROELEKTRONICA CENTRUM VZWInventors: Ludovic Goux, Judit Lisoni Reyes, Thomas Gille, Dirk Wouters
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Publication number: 20100159666Abstract: The use of a conductive bidimensional perovskite as an interface between a silicon, metal, or amorphous oxide substrate and an insulating perovskite deposited by epitaxy, as well as an integrated circuit and its manufacturing process comprising a layer of an insulating perovskite deposited by epitaxy to form the dielectric of capacitive elements having at least an electrode formed of a conductive bidimensional perovskite forming an interface between said dielectric and an underlying silicon, metal, or amorphous oxide substrate.Type: ApplicationFiled: March 3, 2010Publication date: June 24, 2010Applicants: STMicroelectronics S.A., Universite Francois Rabelais, UFR Sciences & TechniquesInventors: Ludovic Goux, Monique Gervais
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Publication number: 20100155687Abstract: A method for manufacturing a resistive switching memory device comprises providing a substrate comprising an electrical contact, providing on the substrate a dielectric layer comprising a trench exposing the electrical contact, and providing in the trench at least the bottom electrode and the resistive switching element of the resistive memory device. The method may furthermore comprise providing a top electrode at least on or in the trench, in contact with the resistive switching element. The present invention also provides corresponding resistive switching memory devices.Type: ApplicationFiled: December 4, 2009Publication date: June 24, 2010Applicant: IMECInventors: Judit Gloria Lisoni Reyes, Ludovic Goux, Dirk Wouters
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Publication number: 20100127233Abstract: The present disclosure provides a method for controlled formation of the resistive switching layer in a resistive switching device. The method comprises providing a substrate (2) comprising the bottom electrode (10), providing on the substrate a dielectric layer (4) comprising a recess (7) containing the metal for forming the resistive layer (11), providing on the substrate a dielectric layer (5) comprising an opening (8) exposing the metal of the recess, and forming the resistive layer in the recess and in the opening.Type: ApplicationFiled: August 31, 2007Publication date: May 27, 2010Applicants: NXP, B.V., INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC)Inventors: Ludovic Goux, Dirk Wouters
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Patent number: 7700981Abstract: The use of a conductive bidimensional perovskite as an interface between a silicon, metal, or amorphous oxide substrate and an insulating perovskite deposited by epitaxy, as well as an integrated circuit and its manufacturing process comprising a layer of an insulating perovskite deposited by epitaxy to form the dielectric of capacitive elements having at least an electrode formed of a conductive bidimensional perovskite forming an interface between said dielectric and an underlying silicon, metal, or amorphous oxide substrate.Type: GrantFiled: April 20, 2006Date of Patent: April 20, 2010Assignee: STMicroelectronics S.A. Universite Francois RabelaisInventors: Ludovic Goux, Monique Gervais
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Publication number: 20100090192Abstract: For improved scalability of resistive switching memories, a cross-point resistive switching structure is disclosed wherein the plug itself is used to store the resistive switching material and where the top electrode layer is self-aligned to the plug using, for example, chemical-mechanical-polishing (CMP) or simply mechanical-polishing.Type: ApplicationFiled: August 31, 2007Publication date: April 15, 2010Applicants: NXP, B.V., INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC)Inventors: Ludovic Goux, Dirk Wouters
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Publication number: 20100001248Abstract: A phase-change-material memory cell is provided. The cell comprises at least one patterned layer of a phase-change material, and is characterized in that this patterned layer comprises at least two regions having different resistivities. If the resistivity of the phase-change material is higher in a well-defined area with limited dimensions (“hot spot”) than outside this area, then, for a given current flow between the electrodes, advantageously more Joule heat will be generated within this area compared to the area of the phase-change material where the resistivity is lower.Type: ApplicationFiled: May 18, 2006Publication date: January 7, 2010Applicants: NXP B.V.Inventors: Dirk Johan Wouters, Ludovic Goux, Judith Lisoni, Thomas Gille
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Publication number: 20090152526Abstract: The present disclosure is related to non-volatile memory devices comprising a reversible resistivity-switching layer used for storing data. The resistivity of this layer can be varied between at least two stable resistivity states such that at least one bit can be stored therein. In particular this resistivity-switching layer is a metal oxide or a metal nitride. A resistivity-switching non-volatile memory element includes a resistivity-switching metal-oxide layer sandwiched between a top electrode and a bottom electrode. The resistivity-switching metal-oxide layer has a gradient of oxygen over its thickness. The gradient is formed in a thermal oxidation step. Set and reset voltages can be tuned by using different oxygen gradients.Type: ApplicationFiled: November 7, 2008Publication date: June 18, 2009Applicants: Interuniversitair Microelektronica Centrum (IMEC) vzw, University of South Toulon VarInventors: Lorene Courtade, Judit Lisoni Reyes, Ludovic Goux, Christian Turquat, Christophe Muller, Dirk Wouters
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Publication number: 20080265237Abstract: A phase-change-memory cell is provided which comprises two insulated regions formed in a first phase-change material connected by a region formed in a second phase-change material. The crystallization temperature of the second phase-change material is below the crystallization temperature of the first phase-change material. By locally changing the material properties using a second PCM material, which switches phase at a lower temperature, a localized “hot spot” is obtained.Type: ApplicationFiled: May 18, 2006Publication date: October 30, 2008Applicant: NXP B.V.Inventors: Ludovic Goux, Dirk Wouters, Judith Lisoni, Thomas Gille
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Publication number: 20070007565Abstract: The use of a conductive bidimensional perovskite as an interface between a silicon, metal, or amorphous oxide substrate and an insulating perovskite deposited by epitaxy, as well as an integrated circuit and its manufacturing process comprising a layer of an insulating perovskite deposited by epitaxy to form the dielectric of capacitive elements having at least an electrode formed of a conductive bidimensional perovskite forming an interface between said dielectric and an underlying silicon, metal, or amorphous oxide substrate.Type: ApplicationFiled: April 20, 2006Publication date: January 11, 2007Applicants: STMicroelectronics S.A., Universite Francois Rabelais, UFR Sciences & TechniquesInventors: Ludovic Goux, Monique Gervais