Patents by Inventor Ludwig Heitzer

Ludwig Heitzer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240030200
    Abstract: In an embodiment, a semiconductor package includes a lower surface having a low voltage contact pad, a high voltage contact pad, an output contact pad, and at least one control contact pad. The semiconductor package further includes a half-bridge circuit including a first transistor device having a first major surface and a second transistor device having a first major surface, the first and second transistor devices being electrically coupled in series at an output node, and a control device that is electrically coupled to the first transistor device and the second transistor device. The first major surface of the first transistor device and of the second transistor device are arranged substantially perpendicularly to the lower surface of the semiconductor package.
    Type: Application
    Filed: July 13, 2023
    Publication date: January 25, 2024
    Inventors: Christian Irrgang, Thomas Behrens, Ludwig Heitzer, Josef Hoglauer, Thorsten Meyer, Thorsten Scharf, Frank Zudock
  • Publication number: 20230369177
    Abstract: A molded semiconductor package includes: a mold compound; a metal substrate partly embedded in the mold compound; at least one first metal lead partly embedded in the mold compound; an inlay embedded in the mold compound, the inlay comprising a semiconductor die embedded in an electrically insulating body, a first metal structure attached to a first side of the semiconductor die, and a second metal structure attached to a second side of the semiconductor die; and a metal clip at least partly embedded in the mold compound and connecting the second metal structure to the at least one first metal lead. The semiconductor die has a maximum junction temperature higher than a glass transition temperature of the mold compound, the electrically insulating body has a glass transition temperature at or above the maximum junction temperature of the semiconductor die, and the metal substrate is attached to the first metal structure.
    Type: Application
    Filed: May 10, 2022
    Publication date: November 16, 2023
    Inventors: Marcus Boehm, Michael Fuegl, Ludwig Heitzer, Stefan Woetzel
  • Publication number: 20230341311
    Abstract: The application relates to a semiconductor device for particle measurement having a cavity housing and a MEMS chip arranged inside the cavity housing. The housing includes a first opening, via which the cavity is connected to the surroundings and in which a first grating is arranged, which is capable by setting it to a first electrical potential of attracting particles from the surroundings and/or electrically charging them. The MEMS chip includes a membrane facing toward the first opening, which is capable by setting it to a second electrical potential of attracting particles. The application furthermore relates to a method for operating a semiconductor device having a cavity housing and a MEMS chip arranged inside the cavity housing.
    Type: Application
    Filed: April 17, 2023
    Publication date: October 26, 2023
    Inventors: Klaus ELIAN, Ludwig HEITZER, Fabian MERBELER, Matthias EBERL, Thomas MÜLLER, Andreas ALLMEIER, Derek DEBIE, Cyrus GHAHREMANI, Jens POHL, Christian IRRGANG
  • Publication number: 20230194478
    Abstract: A radiation source device includes at least one membrane layer, a radiation source structure to emit electromagnetic or infrared radiation, a substrate and a spacer structure, wherein the substrate and the at least one membrane form a chamber, wherein a pressure in the chamber is lower than or equal to a pressure outside of the chamber, and wherein the radiation source structure is arranged between the at least one membrane layer and the substrate.
    Type: Application
    Filed: October 27, 2022
    Publication date: June 22, 2023
    Inventors: Derek Debie, Klaus Elian, Ludwig Heitzer, David Tumpold, Jens Pohl, Cyrus Ghahremani, Thorsten Meyer, Christian Geissler, Andreas Allmeier
  • Patent number: 10571682
    Abstract: A microelectromechanical systems (MEMS) package assembly and a method of manufacturing the same is provided. The MEMS package assembly includes a substrate, a housing coupled to the substrate to form a cavity, wherein the housing includes a transparent plate disposed above and parallel to the substrate and is configured to permit a transmission of light therethrough, and a MEMS chip disposed within the cavity and including a first main surface proximal to the transparent plate and a second main surface opposite to the first main surface and coupled to the substrate. The MEMS chip is oriented such that the first main surface is tilted at a tilt angle with respect to the transparent plate.
    Type: Grant
    Filed: August 10, 2017
    Date of Patent: February 25, 2020
    Assignee: Infineon Technologies AG
    Inventors: Ludwig Heitzer, Derek Debie, Klaus Elian, Cyrus Ghahremani, Johannes Lodermeyer, Oskar Neuhoff, Johann Strasser
  • Patent number: 10539779
    Abstract: A microelectromechanical systems (MEMS) package assembly and a method of manufacturing the same is provided. The MEMS package assembly includes a substrate, a housing coupled to the substrate to form a cavity, wherein the housing includes a transparent plate disposed above and parallel to the substrate and is configured to permit a transmission of light therethrough, and a MEMS chip disposed within the cavity and including a first main surface proximal to the transparent plate and a second main surface opposite to the first main surface and coupled to the substrate. The MEMS chip is oriented such that the first main surface is tilted at a tilt angle with respect to the transparent plate.
    Type: Grant
    Filed: August 10, 2017
    Date of Patent: January 21, 2020
    Assignee: Infineon Technologies AG
    Inventors: Ludwig Heitzer, Derek Debie, Klaus Elian, Cyrus Ghahremani, Johannes Lodermeyer, Oskar Neuhoff, Johann Strasser
  • Patent number: 10424819
    Abstract: A semiconductor battery includes a substrate, a battery anode semiconductor material arranged in or over the substrate, a battery cathode material arranged in or over the substrate and a battery electrolyte disposed between the battery anode semiconductor material and the battery cathode material. An electrically insulating encapsulant has a first face and a second face. The substrate is at least partly embedded in the encapsulant. An anode electrode is electrically connected to the battery anode semiconductor material and is disposed over the second face of the encapsulant. A cathode electrode is electrically connected to the battery cathode material and is disposed over the first face of the encapsulant.
    Type: Grant
    Filed: March 20, 2017
    Date of Patent: September 24, 2019
    Assignee: Infineon Technologies Dresden GmbH & Co. KG
    Inventors: Hans Ehm, Ludwig Heitzer, Marko Lemke, Claudius Von Petersdorff-Campen
  • Publication number: 20190049716
    Abstract: A microelectromechanical systems (MEMS) package assembly and a method of manufacturing the same is provided. The MEMS package assembly includes a substrate, a housing coupled to the substrate to form a cavity, wherein the housing includes a transparent plate disposed above and parallel to the substrate and is configured to permit a transmission of light therethrough, and a MEMS chip disposed within the cavity and including a first main surface proximal to the transparent plate and a second main surface opposite to the first main surface and coupled to the substrate. The MEMS chip is oriented such that the first main surface is tilted at a tilt angle with respect to the transparent plate.
    Type: Application
    Filed: August 10, 2017
    Publication date: February 14, 2019
    Applicant: Infineon Technologies AG
    Inventors: Ludwig HEITZER, Derek DEBIE, Klaus ELIAN, Cyrus GHAHREMANI, Johannes LODERMEYER, Oskar NEUHOFF, Johann STRASSER
  • Patent number: 10043768
    Abstract: A semiconductor device and a method of making a semiconductor device are disclosed. The semiconductor device comprises a redistribution layer arranged over a chip, the redistribution layer comprising a first redistribution line. The semiconductor further comprises an isolation layer disposed over the redistribution layer, the isolation layer having a first opening forming a first pad area and a first interconnect located in the first opening and in contact with the first redistribution line.
    Type: Grant
    Filed: May 12, 2015
    Date of Patent: August 7, 2018
    Assignee: Infineon Technologies AG
    Inventors: Thorsten Meyer, Ludwig Heitzer
  • Patent number: 9881909
    Abstract: A method for fabricating an electronic device includes providing a first semiconductor chip and a second semiconductor chip. The first semiconductor chip has a first semiconductor die and a first solder interconnect layer applied to a main face of the first semiconductor die. The second semiconductor chip has a second semiconductor die, an insulating layer applied to a main face of the second semiconductor die, and a second solder interconnect layer applied to the insulating layer. The method further includes attaching the first semiconductor chip with the first solder interconnect layer to a first carrier and attaching the second semiconductor chip with the second solder interconnect layer to a second carrier.
    Type: Grant
    Filed: October 29, 2015
    Date of Patent: January 30, 2018
    Assignee: Infineon Technologies AG
    Inventors: Michael Bauer, Ludwig Heitzer, Christian Stuempfl
  • Publication number: 20170271722
    Abstract: A semiconductor battery includes a substrate, a battery anode semiconductor material arranged in or over the substrate, a battery cathode material arranged in or over the substrate and a battery electrolyte disposed between the battery anode semiconductor material and the battery cathode material. An electrically insulating encapsulant has a first face and a second face. The substrate is at least partly embedded in the encapsulant. An anode electrode is electrically connected to the battery anode semiconductor material and is disposed over the second face of the encapsulant. A cathode electrode is electrically connected to the battery cathode material and is disposed over the first face of the encapsulant.
    Type: Application
    Filed: March 20, 2017
    Publication date: September 21, 2017
    Inventors: Hans Ehm, Ludwig Heitzer, Marko Lemke, Claudius Von Petersdorff-Campen
  • Patent number: 9576935
    Abstract: A method for fabricating semiconductor packages includes providing a first substrate having an aperture, providing a first semiconductor chip, connecting the first semiconductor chip to the first substrate, filling the aperture with a first insulating material and encapsulating the semiconductor chip with a second insulating material to create a first encapsulation body.
    Type: Grant
    Filed: April 16, 2014
    Date of Patent: February 21, 2017
    Assignee: Infineon Technologies AG
    Inventors: Michael Bauer, Ludwig Heitzer, Christian Stuempfl
  • Publication number: 20160379945
    Abstract: A semiconductor device and a method of making a semiconductor device are disclosed. The semiconductor device comprises a redistribution layer arranged over a chip, the redistribution layer comprising a first redistribution line. The semiconductor further comprises an isolation layer disposed over the redistribution layer, the isolation layer having a first opening forming a first pad area and a first interconnect located in the first opening and in contact with the first redistribution line.
    Type: Application
    Filed: May 12, 2015
    Publication date: December 29, 2016
    Inventors: Thorston MEYER, Ludwig HEITZER
  • Publication number: 20160126227
    Abstract: A method for fabricating an electronic device includes providing a first semiconductor chip and a second semiconductor chip. The first semiconductor chip has a first semiconductor die and a first solder interconnect layer applied to a main face of the first semiconductor die. The second semiconductor chip has a second semiconductor die, an insulating layer applied to a main face of the second semiconductor die, and a second solder interconnect layer applied to the insulating layer. The method further includes attaching the first semiconductor chip with the first solder interconnect layer to a first carrier and attaching the second semiconductor chip with the second solder interconnect layer to a second carrier.
    Type: Application
    Filed: October 29, 2015
    Publication date: May 5, 2016
    Inventors: Michael Bauer, Ludwig Heitzer, Christian Stuempfl
  • Publication number: 20150303135
    Abstract: A method for fabricating semiconductor packages includes providing a first substrate having an aperture, providing a first semiconductor chip, connecting the first semiconductor chip to the first substrate, filling the aperture with a first insulating material and encapsulating the semiconductor chip with a second insulating material to create a first encapsulation body.
    Type: Application
    Filed: April 16, 2014
    Publication date: October 22, 2015
    Applicant: Infineon Technologies AG
    Inventors: Michael Bauer, Ludwig Heitzer, Christian Stuempfl
  • Patent number: 9030019
    Abstract: A semiconductor device and a method of making a semiconductor device are disclosed. The semiconductor device comprises a redistribution layer arranged over a chip, the redistribution layer comprising a first redistribution line. The semiconductor further comprises an isolation layer disposed over the redistribution layer, the isolation layer having a first opening forming a first pad area and a first interconnect located in the first opening and in contact with the first redistribution line. The redistribution line in the first pad area is arranged orthogonal to a first direction to a neutral point of the semiconductor device.
    Type: Grant
    Filed: December 14, 2010
    Date of Patent: May 12, 2015
    Assignee: Infineon Technologies AG
    Inventors: Thorsten Meyer, Ludwig Heitzer
  • Patent number: 8421226
    Abstract: A device includes a semiconductor chip having contact pads arranged on a first main face of the semiconductor chip. A first material has an elongation to break of greater than 35% covering the first main face of the semiconductor chip. An encapsulation body covers the semiconductor chip. A metal layer is electrically coupled to the contact pads of the semiconductor chip and extends over the encapsulation body.
    Type: Grant
    Filed: February 25, 2010
    Date of Patent: April 16, 2013
    Assignee: Infineon Technologies AG
    Inventors: Thorsten Meyer, Ludwig Heitzer, Dominic Maier
  • Patent number: 8330260
    Abstract: A method for producing an electronic component of a VQFN (very thin quad flat pack no-lead) design includes the following method steps: anchoring at least one integrated circuit element on a sacrificial substrate; contact-connecting the at least one integrated circuit element to the sacrificial substrate with formation of contact-connecting points on the sacrificial substrate; forming an encapsulation on a top side of the sacrificial substrate, the at least one anchored integrated circuit element being mounted on the top side of the sacrificial substrate; removing the sacrificial substrate, thereby uncovering a portion of the contact-connecting points on the underside of the encapsulation.
    Type: Grant
    Filed: July 20, 2007
    Date of Patent: December 11, 2012
    Assignee: Infineon Technologies AG
    Inventors: Michael Bauer, Ludwig Heitzer, Christian Stuempfl
  • Publication number: 20120146231
    Abstract: A semiconductor device and a method of making a semiconductor device are disclosed. The semiconductor device comprises a redistribution layer arranged over a chip, the redistribution layer comprising a first redistribution line. The semiconductor further comprises an isolation layer disposed over the redistribution layer, the isolation layer having a first opening forming a first pad area and a first interconnect located in the first opening and in contact with the first redistribution line. The redistribution line in the first pad area is arranged orthogonal to a first direction to a neutral point of the semiconductor device.
    Type: Application
    Filed: December 14, 2010
    Publication date: June 14, 2012
    Inventors: Thorsten Meyer, Ludwig Heitzer
  • Patent number: 8173488
    Abstract: This application relates to a method of manufacturing a semiconductor device comprising: providing multiple chips each comprising contact elements on a first main face of each of the multiple chips, and a first layer applied to each of the first main faces of the multiple chips; placing the multiple chips over a carrier with the first layers facing the carrier; applying encapsulation material to the multiple chips and the carrier to form an encapsulation workpiece embedding the multiple chips; and removing the carrier from the encapsulation workpiece.
    Type: Grant
    Filed: September 30, 2008
    Date of Patent: May 8, 2012
    Assignee: Intel Mobile Communications GmbH
    Inventors: Michael Bauer, Ludwig Heitzer, Daniel Porwol