Patents by Inventor LUN YU

LUN YU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7292478
    Abstract: A non-volatile memory cell is described, including a semiconductor substrate with a trench therein, a charge-trapping layer in the trench, a gate disposed in the trench and separated from the substrate by at least the charge-trapping layer, and S/D regions in the substrate beside the trench. The gate includes a p-doped semiconductor material, so that the memory cell is particularly suitable to erase through hole injection from the gate.
    Type: Grant
    Filed: September 8, 2005
    Date of Patent: November 6, 2007
    Assignee: Macronix International Co., Ltd.
    Inventors: Chao-Lun Yu, Chao-I Wu
  • Publication number: 20070081434
    Abstract: Apparatuses and methods for controlling the quality of writing an optical storage medium in an optical storage system having an accessing logic for steering data to be written onto or read from the optical storage medium. The apparatus contains a halting controller, an evaluation device, a recording tangential velocity (RTV) adjusting device, and a starting controller. The halting controller requests the accessing logic to halt a write procedure at a stopping point. The evaluation device evaluates the writing quality of a portion of the data recorded onto the optical storage medium to generate an evaluation result. The RTV adjusting device requests the accessing logic to adjust the RTV of the optical storage medium if the evaluation result does not satisfy predetermined criteria. Finally, the starting controller requests the accessing logic to restart the write procedure to continue writing data onto the optical storage medium.
    Type: Application
    Filed: October 11, 2005
    Publication date: April 12, 2007
    Inventors: Fu-Shan Wang, Pie-Lun Yu
  • Publication number: 20070063268
    Abstract: A non-volatile memory cell is described, including a semiconductor substrate with a trench therein, a charge-trapping layer in the trench, a gate disposed in the trench and separated from the substrate by at least the charge-trapping layer, and S/D regions in the substrate beside the trench. The gate includes a p-doped semiconductor material, so that the memory cell is particularly suitable to erase through hole injection from the gate.
    Type: Application
    Filed: September 8, 2005
    Publication date: March 22, 2007
    Inventors: Chao-Lun Yu, Chao-I Wu
  • Publication number: 20070012993
    Abstract: The present invention disclosed a non-volatile memory device and fabricating method thereof. The structure of non-volatile memory device at least comprises a substrate, several dielectric strips, several bit lines, a dielectrically stacking multi-layer, and several word lines. The substrate has several recesses. The dielectric strips are formed on the substrate, and each of the recess is interposed between two adjacent dielectric strips. The bit lines are respectively formed on the dielectric strips. The dielectrically stacking multi-layer comprising a charge-trapping layer is disposed on the bit lines and the recesses. The word lines are formed on the dielectrically stacking multi-layer and intersecting to the bit lines. When a voltage is applied to the bit lines, a plurality of inversion regions are respectively generated on the substrate.
    Type: Application
    Filed: July 12, 2005
    Publication date: January 18, 2007
    Inventors: Chao-Lun Yu, Chao-I Wu
  • Publication number: 20070008777
    Abstract: A non-volatile memory is described. The non-volatile memory includes a first source/drain region, a second source/drain region, a charge-trapping layer and a gate layer. The first source/drain region is disposed beside the top sidewall of a trench in a substrate. The second source/drain region is disposed in the substrate at the bottom of the trench. The gate layer is disposed in the trench and on the substrate. The charge-trapping layer is disposed between the gate layer and the substrate. A plurality of assisted charges is stored in one of the sides of the charge-trapping layer.
    Type: Application
    Filed: May 3, 2006
    Publication date: January 11, 2007
    Inventors: Ming-Hsiang Hsueh, Ming-Chang Kuo, Min-Ta Wu, Chao-Lun Yu
  • Publication number: 20070003894
    Abstract: Disclosed is an electronic candle, which includes a center stick of wax with a wick for burning, a perfume stick surrounding the center stick of wax for giving off a good smell when melting, an electronic device, which is fastened to the perfume stick at the bottom side and has a circuit board and a photo sensor for driving the circuit board to produce sound and lighting effects during burning of the wick of the center stick of wax, and optical fibers embedded in the center stick for transmitting light from the flame burning at the wick to the photo sensor to induce the photo sensor.
    Type: Application
    Filed: June 29, 2005
    Publication date: January 4, 2007
    Inventor: Shung-Lun Yu
  • Patent number: 6960076
    Abstract: An electronic switch for a drop-free candle is comprised of a candle, a wick, a metal disk, a conductor and a circuit board; the metal disk being buried in the candle; the conductor being provided in the form of an optical fiber or a magnet twisted pair cable; the conductor being provided along the wick to control the operation of the circuit board provided at the bottom of the candle to realize the function of an electronic switch while preventing drops of the fatting substance of the candle.
    Type: Grant
    Filed: October 9, 2003
    Date of Patent: November 1, 2005
    Inventor: Shung-Lun Yu
  • Publication number: 20050079463
    Abstract: An electronic switch for a drop-free candle is comprised of a candle, a wick, a metal disk, a conductor and a circuit board; the metal disk being buried in the candle; the conductor being provided in the form of an optical fiber or a magnet twisted pair cable; the conductor being provided along the wick to control the operation of the circuit board provided at the bottom of the candle to realize the function of an electronic switch while preventing drops of the fatting substance of the candle.
    Type: Application
    Filed: October 9, 2003
    Publication date: April 14, 2005
    Inventor: Shung-Lun Yu
  • Patent number: 5923138
    Abstract: A manually-operated handwheel interpolation generating device mainly makes use of a set-up of pulse adjuster to be used by the operators to perform smoothing dressing for the handwheel's pulse command when they are using handwheel to perform post-stage precision machining so as to upgrade the precision level and surface roughness of workpieces, and said pulse adjuster comprises a handwheel interpolation generator which mainly makes use of a pulse smoothing dresser to attain the object of smoothing dressing, thereby, the present invention can, under the condition of keeping the total output pulse amount unchanged, effectively improve the non-smooth phenomena of the handwheel's manually-operated machining work and the surface roughness of workpieces.
    Type: Grant
    Filed: September 18, 1998
    Date of Patent: July 13, 1999
    Assignee: Industrial Technology Research Institute
    Inventors: Lun-Yu Kuo, Wen-Peng Tseng, Hsin-Chuan Su