Abstract: A light-emitting diode chip includes a semiconductor body including a radiation-generating active region, at least two contact locations electrically contacting the active region, a carrier and a connecting medium arranged between the carrier and the semiconductor body, wherein the semiconductor body includes roughening on outer surfaces facing the carrier, the semiconductor body mechanically connects to the carrier by the connecting medium, the connecting medium locally directly contacts the semiconductor body and the carrier, and the at least two contact locations are arranged on the upper side of the semiconductor body facing away from the carrier.

Abstract: An optoelectronic projection device which generates a predefined image during operation, including a semiconductor body having an active layer that generates electromagnetic radiation and a radiation exit side and is an imaging element of the projection device, wherein, to electrically contact the semiconductor body, a first contact layer and a second contact layer are arranged at a rear side of the semiconductor body, the rear side lying opposite the radiation exit side, and are electrically insulated from one another by a separating layer.

Abstract: An optoelectronic semiconductor component includes a carrier and at least one semiconductor layer sequence. The semiconductor layer sequence includes at least one active layer. The semiconductor layer sequence is furthermore mounted on the carrier. The semiconductor component furthermore includes a metal mirror located between the carrier and the semiconductor layer sequence. The carrier and the semiconductor layer sequence project laterally beyond the metal mirror. The metal mirror is laterally surrounded by a radiation-transmissive encapsulation layer.

Abstract: A support for an optoelectronic semiconductor chip includes a support body with a first main face and a second main face opposite the first main face, at least one electrical plated-through hole extending from the first main face to the second main face and formed in the support body, and an insulating layer arranged on the first main face, the insulation layer covering the electrical plated-through hole only in regions.

Abstract: What is specified is: a lighting apparatus, with a piezoelectric transformer (1), which has a mounting face (10), on which at least two output-side connection points (11) are arranged, and at least one substrateless light-emitting diode (2), which is designed to generate electromagnetic radiation, wherein the at least one substrateless light-emitting diode (2) is fitted at least indirectly to the mounting face (10) and fastened mechanically to the mounting face (10), and the at least one substrateless light-emitting diode (2) is electrically conductively connected to at least two of the output-side connection points (11).

Abstract: A light-emitting diode chip is specified, comprising an n-conducting region (1), a p-conducting region (2), an active region (3) between the n-conducting region (1) and the p-conducting region (2), a mirror layer (4) at that side of the p-conducting region (2) which is remote from the active region (3), and an insulation layer (5) formed with an electrically insulating material, wherein the mirror layer (4) is designed for reflecting electromagnetic radiation generated in the active region (3), and the mirror layer (4) has a perforation (41), wherein a side area (4a) of the mirror layer (4) is completely covered by the insulation layer (5) in the region of the perforation (41).

Abstract: An optoelectronic component has a semiconductor body including an epitaxial layer sequence, and a carrier substrate consisting of a semiconductor material connected to the semiconductor body by a solder layer, and through-connections. The carrier substrate includes a surface doping zone extending along a first main surface facing the semiconductor body. The surface doping zone includes a p-conductive region and an n-conductive region adjacent thereto, between which regions a pn-junction is formed. The n-conductive region electrically connects to a p-doped region of the epitaxial layer sequence via a first sub-region of the solder layer, and the p-conductive region electrically connects to an n-doped region of the epitaxial layer sequence via a second sub-region of the solder layer.

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer stack and a radiation exit face or radiation entrance face, wherein the semiconductor layer stack includes an active layer that generates or receives electromagnetic radiation, and a plurality of nanostructures arranged in the semiconductor layer stack and/or on the radiation exit or entrance face, at least some of the nanostructures including at least one substructure.

Abstract: A light-emitting diode chip is specified, comprising an n-conducting region (1), a p-conducting region (2), an active region (3) between the n-conducting region (1) and the p-conducting region (2), a mirror layer (4) at that side of the p-conducting region (2) which is remote from the active region (3), an encapsulation layer (5) at that side of the mirror layer (4) which is remote from the p-conducting region (2), and a contact layer (6) at a side of the encapsulation layer (5) which is remote from the mirror layer (4), wherein the encapsulation layer (5) extends along a bottom area (43) of the mirror layer (4) which is remote from the p-conducting region (2) and a side area (42) of the mirror layer (4) which runs transversely with respect to the bottom area (43), and the contact layer (6) is freely accessible in places from its side facing the n-conducting region (1).

Abstract: An optoelectronic component includes a semiconductor body and a carrier substrate connected to the semiconductor body with a solder joint, wherein the carrier substrate includes first and second apertures, through which first and second electrically conductive connecting layers are guided from a first primary surface of the carrier substrate facing away from the semiconductor body to a second primary surface of the carrier substrate facing away from the semiconductor body, the carrier substrate made of a semiconductor material and having side flanks, which run obliquely to the primary surfaces at least in a first partial region, wherein the side flanks are provided with an electrically insulating layer in the first partial region.

Abstract: A method for producing an optoelectronic semiconductor chip is specified, comprising the following steps: providing an n-conducting layer (2), arranging a p-conducting layer (4) on the n-conducting layer (2), arranging a metal layer sequence (5) on the p-conducting layer (4),arranging a mask (6) at that side of the metal layer sequence (5) which is remote from the p-conducting layer (4),in places removing the metal layer sequence (5) and uncovering the p-conducting layer (4) using the mask (6), and in places neutralizing or removing the uncovered regions (4a) of the p-conducting layer (4) as far as the n-conducting layer (2) using the mask (6), wherein the metal layer sequence (5) comprises at least one mirror layer (51) and a barrier layer (52), and the mirror layer (51) of the metal layer sequence (5) faces the p-conducting layer (4).

Abstract: In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence.

Abstract: An optoelectronic semiconductor chip has a first semiconductor functional region with a first terminal and a second terminal. A contact structure electrically contacts the optoelectronic semiconductor chip. The contact structure is connected electrically conductively to the first semiconductor functional region. The contact structure has a disconnectable conductor structure. An operating current path is established via the first terminal of the first semiconductor functional region and the second terminal if the conductor structure is not disconnected. This path is interrupted if the conductor structure is disconnected. Alternatively, an operating current path is established via the first terminal of the first semiconductor functional region and the second terminal if the conductor structure is disconnected. The conductor structure connects the first terminal to the second terminal and short circuits the first semiconductor functional region if the conductor structure is not disconnected.

Abstract: An optoelectronic semiconductor chip comprises the following sequence of regions in a growth direction (c) of the semiconductor chip (20): a p doped barrier layer (1) for an active region (2), the active region (2), which is suitable for generating electromagnetic radiation, the active region being based on a hexagonal compound semiconductor, and an n doped barrier layer (3) for the active region (2). Also disclosed are a component comprising such a semiconductor chip, and to a method for producing such a semiconductor chip.

Abstract: In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence.

Abstract: An optoelectronic component includes a semiconductor body and a carrier substrate connected to the semiconductor body with a solder joint, wherein the carrier substrate includes first and second apertures, through which first and second electrically conductive connecting layers are guided from a first primary surface of the carrier substrate facing away from the semiconductor body to a second primary surface of the carrier substrate facing away from the semiconductor body, the carrier substrate made of a semiconductor material and having side flanks, which run obliquely to the primary surfaces at least in a first partial region, wherein the side flanks are provided with an electrically insulating layer in the first partial region.

Abstract: An optoelectronic semiconductor component includes a carrier and at least one semiconductor layer sequence. The semiconductor layer sequence includes at least one active layer. The semiconductor layer sequence is furthermore mounted on the carrier. The semiconductor component furthermore includes a metal mirror located between the carrier and the semiconductor layer sequence. The carrier and the semiconductor layer sequence project laterally beyond the metal mirror. The metal mirror is laterally surrounded by a radiation-transmissive encapsulation layer.

Abstract: A method for producing optoelectronic components including A) providing a growth substrate with a semiconductor layer arranged thereon that produces a zone which is active during operation, B) applying separating structures on the semiconductor layer, C) applying a multiplicity of copper layers on the semiconductor layer in regions delimited by the separating structures, D) removing the separating structures, E) applying, a protective layer at least on lateral areas of copper layers, F) applying an auxiliary substrate on the copper layers, G) removing the growth substrate, H) singulating a composite assembly comprising the semiconductor layer, the copper layers and the auxiliary substrate to form components which are separated from one another.

Abstract: A radiation-emitting semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, wherein an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region that generates radiation, the active region being arranged between a first semiconductor layer and a second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the emission region has a recess extending through the active region; the first semiconductor layer in the emission region is electrically conductively connected to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier; and the first connection layer in the protective diode region is electrically conductively connected to the second semiconductor layer.

Abstract: An optoelectronic projection device which generates a predefined image during operation, including a semiconductor body having an active layer that generates electromagnetic radiation and a radiation exit side and is an imaging element of the projection device, wherein, to electrically contact the semiconductor body, a first contact layer and a second contact layer are arranged at a rear side of the semiconductor body, the rear side lying opposite the radiation exit side, and are electrically insulated from one another by a separating layer.