Patents by Inventor Lyudmila Stone

Lyudmila Stone has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11222768
    Abstract: Disclosed is a semiconductor processing apparatus including one or more components having a conductive or nonconductive porous material. In some embodiments, an ion implanter may include a plurality of beam line components for directing an ion beam to a target, and a porous material along a surface of at least one of the plurality of beamline components.
    Type: Grant
    Filed: August 26, 2019
    Date of Patent: January 11, 2022
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: James Alan Pixley, Eric D. Hermanson, Philip Layne, Lyudmila Stone, Thomas Stacy
  • Publication number: 20200378837
    Abstract: A temperature measurement apparatus. The temperature measurement apparatus may include a temperature sensor body, the temperature sensor body having a substrate support surface; and a heat transfer layer, disposed on the substrate support surface, the heat transfer layer comprising an array of aligned carbon nanotubes.
    Type: Application
    Filed: September 4, 2019
    Publication date: December 3, 2020
    Applicant: APPLIED Materials, Inc.
    Inventors: Dawei Sun, D. Jeffrey Lischer, Qin Chen, Dale K. Stone, Lyudmila Stone, Steven Anella, Ron Serisky, Chi-Yang Cheng
  • Publication number: 20200381271
    Abstract: A heating system for heating a substrate. The heating system may include a susceptor, where the susceptor has a substrate support surface. The heating system may further include a heat transfer layer, disposed on the substrate support surface, where the heat transfer layer comprising an array of aligned carbon nanotubes.
    Type: Application
    Filed: September 4, 2019
    Publication date: December 3, 2020
    Applicant: APPLIED Materials, Inc.
    Inventors: Dawei Sun, Dale K. Stone, D. Jeffrey Lischer, Lyudmila Stone, Steven Anella, Julian G. Blake, Ron Serisky, Daniel A. Hall, Robert H. Bettencourt
  • Patent number: 10643823
    Abstract: Disclosed is a semiconductor processing apparatus including one or more components having a conductive or nonconductive foam material. In some embodiments, the component is a plasma flood gun including a shield assembly coupled to the plasma flood gun. The shield assembly may include a first shield having a first main side facing an ion beam target, and a connection block coupled to a second main side of the first shield. The shield assembly may further include a mounting plate coupled to the connection block, and a second shield coupled to the mounting plate by a bracket. In some embodiments, the first shield and/or one or more process chamber walls includes a foam material, such as a conductive or nonconductive foam.
    Type: Grant
    Filed: October 16, 2018
    Date of Patent: May 5, 2020
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: James Alan Pixley, Eric D. Hermanson, Philip Layne, Lyudmila Stone, Thomas Stacy
  • Publication number: 20200083021
    Abstract: Disclosed is a semiconductor processing apparatus including one or more components having a conductive or nonconductive porous material. In some embodiments, an ion implanter may include a plurality of beam line components for directing an ion beam to a target, and a porous material along a surface of at least one of the plurality of beamline components.
    Type: Application
    Filed: August 26, 2019
    Publication date: March 12, 2020
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: James Alan Pixley, Eric D. Hermanson, Philip Layne, Lyudmila Stone, Thomas Stacy
  • Publication number: 20200083027
    Abstract: Disclosed is a semiconductor processing apparatus including one or more components having a conductive or nonconductive foam material. In some embodiments, the component is a plasma flood gun including a shield assembly coupled to the plasma flood gun. The shield assembly may include a first shield having a first main side facing an ion beam target, and a connection block coupled to a second main side of the first shield. The shield assembly may further include a mounting plate coupled to the connection block, and a second shield coupled to the mounting plate by a bracket. In some embodiments, the first shield and/or one or more process chamber walls includes a foam material, such as a conductive or nonconductive foam.
    Type: Application
    Filed: October 16, 2018
    Publication date: March 12, 2020
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: James Alan Pixley, Eric D. Hermanson, Philip Layne, Lyudmila Stone, Thomas Stacy
  • Patent number: 10385454
    Abstract: In one embodiment, a method of fabricating an electrostatic clamp includes forming an insulator body, forming an electrode on the insulator body, and depositing a layer stack on the electrode, the layer stack comprising an aluminum oxide layer that is deposited using atomic layer deposition (ALD).
    Type: Grant
    Filed: March 3, 2017
    Date of Patent: August 20, 2019
    Assignees: Varian Semiconductor Equipment Associates, Inc., Entegris, Inc.
    Inventors: Dale K. Stone, Richard Cooke, I-Kuan Lin, Julian G. Blake, Lyudmila Stone
  • Publication number: 20190252230
    Abstract: An apparatus to support a substrate may include a base and an insulator portion adjacent to the base and configured to support a surface of the substrate. The apparatus may also include an electrode system to apply a clamping voltage to the substrate, wherein the insulator portion is configured to provide a gas to the substrate through at least one channel that has a channel width, wherein a product of the gas pressure and channel width is less than a Paschen minimum for the gas, where the Paschen minimum is a product of pressure and separation of surfaces of an enclosure at which a breakdown voltage of the gas is a minimum.
    Type: Application
    Filed: April 29, 2019
    Publication date: August 15, 2019
    Inventors: Dale K. Stone, Julian G. Blake, Lyudmila Stone
  • Publication number: 20170335460
    Abstract: In one embodiment, a method of fabricating an electrostatic clamp includes forming an insulator body, forming an electrode on the insulator body, and depositing a layer stack on the electrode, the layer stack comprising an aluminum oxide layer that is deposited using atomic layer deposition (ALD).
    Type: Application
    Filed: March 3, 2017
    Publication date: November 23, 2017
    Inventors: Dale K. Stone, Richard Cooke, I-Kuan Lin, Julian G. Blake, Lyudmila Stone
  • Patent number: 9692325
    Abstract: In accordance with an embodiment of the invention, there is provided an electrostatic chuck comprising a conductive path covering at least a portion of a workpiece-contacting surface of a gas seal ring of the electrostatic chuck, the conductive path comprising at least a portion of an electrical path to ground; and a main field area of a workpiece-contacting surface of the electrostatic chuck comprising a surface resistivity in the range of from about 108 to about 1012 ohms per square.
    Type: Grant
    Filed: September 8, 2011
    Date of Patent: June 27, 2017
    Assignees: Entegris, Inc., Varian Semiconductor Equipment Associates, Inc.
    Inventors: David Suuronen, Lyudmila Stone, Julian Blake, Dale K. Stone, Richard A. Cooke, Steven Donnell, Chandra Venkatraman
  • Patent number: 9644269
    Abstract: In one embodiment, a method of fabricating an electrostatic clamp includes forming an insulator body, forming an electrode on the insulator body, and depositing a layer stack on the electrode, the layer stack comprising an aluminum oxide layer that is deposited using atomic layer deposition (ALD).
    Type: Grant
    Filed: May 16, 2014
    Date of Patent: May 9, 2017
    Assignee: Varian Semiconductor Equipment Associates, Inc
    Inventors: Dale K. Stone, Richard Cooke, I-Kuan Lin, Julian G. Blake, Lyudmila Stone
  • Patent number: 9633875
    Abstract: An apparatus for improving the temperature uniformity of a workpiece during processing is disclosed. The apparatus includes a platen having a separately controlled edge heater capable to independently heating the outer edge of the platen. In this way, additional heat may be supplied near the outer edge of the platen, helping to maintain a constant temperature across the entirety of the platen. This edge heater may be disposed on an outer surface of the platen, or may, in certain embodiments, be embedded in the platen. In certain embodiments, the edge heater and the primary heating element are disposed in two different planes, where the edge heater is disposed closer to the top surface of the platen than the primary heating element.
    Type: Grant
    Filed: March 13, 2015
    Date of Patent: April 25, 2017
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Dawei Sun, D. Jeffrey Lischer, Steven M. Anella, Dale K. Stone, Lyudmila Stone
  • Publication number: 20160268150
    Abstract: An apparatus for improving the temperature uniformity of a workpiece during processing is disclosed. The apparatus includes a platen having a separately controlled edge heater capable to independently heating the outer edge of the platen. In this way, additional heat may be supplied near the outer edge of the platen, helping to maintain a constant temperature across the entirety of the platen. This edge heater may be disposed on an outer surface of the platen, or may, in certain embodiments, be embedded in the platen. In certain embodiments, the edge heater and the primary heating element are disposed in two different planes, where the edge heater is disposed closer to the top surface of the platen than the primary heating element.
    Type: Application
    Filed: March 13, 2015
    Publication date: September 15, 2016
    Inventors: Dawei Sun, D. Jeffrey Lischer, Steven M. Anella, Dale K. Stone, Lyudmila Stone
  • Publication number: 20150228524
    Abstract: An apparatus to support a substrate may include a base and an insulator portion adjacent to the base and configured to support a surface of the substrate. The apparatus may also include an electrode system to apply a clamping voltage to the substrate, wherein the insulator portion is configured to provide a gas to the substrate through at least one channel that has a channel width, wherein a product of the gas pressure and channel width is less than a Paschen minimum for the gas, where the Paschen minimum is a product of pressure and separation of surfaces of an enclosure at which a breakdown voltage of the gas is a minimum.
    Type: Application
    Filed: February 12, 2014
    Publication date: August 13, 2015
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Dale K. Stone, Julian G. Blake, Lyudmila Stone
  • Publication number: 20150214087
    Abstract: In one embodiment, a method of fabricating an electrostatic clamp includes forming an insulator body, forming an electrode on the insulator body, and depositing a layer stack on the electrode, the layer stack comprising an aluminum oxide layer that is deposited using atomic layer deposition (ALD).
    Type: Application
    Filed: May 16, 2014
    Publication date: July 30, 2015
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Dale K. Stone, Richard Cooke, I-Kuan Lin, Julian G. Blake, Lyudmila Stone
  • Patent number: 9082804
    Abstract: An electrostatic clamp which more effectively removes built up charge from a substrate prior to removal is disclosed. Currently, the lift pins and the ground pins are the only mechanism used to remove charge from the substrate after implantation. The present discloses describes an electrostatic chuck in which the top dielectric surface has an embedded conductive region, such as a ring shaped conductive region in the sealing ring. Thus, regardless of the orientation of the substrate during release, at least a portion of the substrate will contain the conductive region on the dielectric layer of the workpiece support. This conductive region may be connected to ground through the use of conductive vias in the dielectric layer. In some embodiments, these conductive vias are the fluid conduits used to supply gas to the back side of the substrate.
    Type: Grant
    Filed: February 7, 2011
    Date of Patent: July 14, 2015
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Julian Blake, Dale K. Stone, Lyudmila Stone, David Suuronen, Shigeo Oshiro
  • Patent number: 9025305
    Abstract: In accordance with an embodiment of the invention, there is provided an electrostatic chuck. The electrostatic chuck comprises an electrode, and a surface layer activated by a voltage in the electrode to form an electric charge to electrostatically clamp a substrate to the electrostatic chuck, the surface layer including a charge control layer comprising a surface resistivity of greater than about 1011 ohms per square.
    Type: Grant
    Filed: May 24, 2011
    Date of Patent: May 5, 2015
    Assignees: Entegris, Inc., Varian Semiconductor Equipment Associates, Inc.
    Inventors: Richard A. Cooke, Dale K. Stone, Lyudmila Stone, Julian Blake, David Suuronen
  • Publication number: 20140318455
    Abstract: An electrostatic chuck includes a heater and an electrode disposed on the heater. The electrostatic chuck also includes an insulator layer and coating disposed on the insulator, where the coating is configured to support an electrostatic field generated by the electrode system to attract a substrate thereto.
    Type: Application
    Filed: April 26, 2013
    Publication date: October 30, 2014
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Julian G. Blake, Dale K. Stone, Lyudmila Stone, Michael Schrameyer
  • Patent number: 8531814
    Abstract: An electrostatic clamp, which more effectively removes built up charge from a substrate prior to and during removal, is disclosed. Currently, the lift pins and ground pins are the only mechanisms used to remove charge from the substrate after implantation. The present discloses describes a clamp having one of more additional low resistance paths to ground. These additional conduits allow built up charge to be dissipated prior to and during the removal of the substrate from the clamp. By providing sufficient charge drainage from the backside surface of the substrate 114, the problem whereby the substrate sticks to the clamp can be reduced. This results in a corresponding reduction in substrate breakage.
    Type: Grant
    Filed: April 14, 2010
    Date of Patent: September 10, 2013
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Dale K. Stone, Lyudmila Stone, Klaus Petry, David E. Suuronen, Julian G. Blake
  • Publication number: 20130155569
    Abstract: In accordance with an embodiment of the invention, there is provided an electrostatic chuck comprising a conductive path covering at least a portion of a workpiece-contacting surface of a gas seal ring of the electrostatic chuck, the conductive path comprising at least a portion of an electrical path to ground; and a main field area of a workpiece-contacting surface of the electrostatic chuck comprising a surface resistivity in the range of from about 108 to about 1012 ohms per square.
    Type: Application
    Filed: September 8, 2011
    Publication date: June 20, 2013
    Applicants: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC., ENTEGRIS, INC.
    Inventors: David Suuronen, Lyudmila Stone, Julian Blake, Dale K. Stone, Richard A. Cooke, Steven Donnell, Chandra Venkatraman