Patents by Inventor Lyudmila Stone
Lyudmila Stone has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11473978Abstract: A temperature measurement apparatus. The temperature measurement apparatus may include a temperature sensor body, the temperature sensor body having a substrate support surface; and a heat transfer layer, disposed on the substrate support surface, the heat transfer layer comprising an array of aligned carbon nanotubes.Type: GrantFiled: September 4, 2019Date of Patent: October 18, 2022Assignee: APPLIED Materials, Inc.Inventors: Dawei Sun, D. Jeffrey Lischer, Qin Chen, Dale K. Stone, Lyudmila Stone, Steven Anella, Ron Serisky, Chi-Yang Cheng
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Patent number: 11222768Abstract: Disclosed is a semiconductor processing apparatus including one or more components having a conductive or nonconductive porous material. In some embodiments, an ion implanter may include a plurality of beam line components for directing an ion beam to a target, and a porous material along a surface of at least one of the plurality of beamline components.Type: GrantFiled: August 26, 2019Date of Patent: January 11, 2022Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: James Alan Pixley, Eric D. Hermanson, Philip Layne, Lyudmila Stone, Thomas Stacy
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Publication number: 20200381271Abstract: A heating system for heating a substrate. The heating system may include a susceptor, where the susceptor has a substrate support surface. The heating system may further include a heat transfer layer, disposed on the substrate support surface, where the heat transfer layer comprising an array of aligned carbon nanotubes.Type: ApplicationFiled: September 4, 2019Publication date: December 3, 2020Applicant: APPLIED Materials, Inc.Inventors: Dawei Sun, Dale K. Stone, D. Jeffrey Lischer, Lyudmila Stone, Steven Anella, Julian G. Blake, Ron Serisky, Daniel A. Hall, Robert H. Bettencourt
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Publication number: 20200378837Abstract: A temperature measurement apparatus. The temperature measurement apparatus may include a temperature sensor body, the temperature sensor body having a substrate support surface; and a heat transfer layer, disposed on the substrate support surface, the heat transfer layer comprising an array of aligned carbon nanotubes.Type: ApplicationFiled: September 4, 2019Publication date: December 3, 2020Applicant: APPLIED Materials, Inc.Inventors: Dawei Sun, D. Jeffrey Lischer, Qin Chen, Dale K. Stone, Lyudmila Stone, Steven Anella, Ron Serisky, Chi-Yang Cheng
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Patent number: 10643823Abstract: Disclosed is a semiconductor processing apparatus including one or more components having a conductive or nonconductive foam material. In some embodiments, the component is a plasma flood gun including a shield assembly coupled to the plasma flood gun. The shield assembly may include a first shield having a first main side facing an ion beam target, and a connection block coupled to a second main side of the first shield. The shield assembly may further include a mounting plate coupled to the connection block, and a second shield coupled to the mounting plate by a bracket. In some embodiments, the first shield and/or one or more process chamber walls includes a foam material, such as a conductive or nonconductive foam.Type: GrantFiled: October 16, 2018Date of Patent: May 5, 2020Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: James Alan Pixley, Eric D. Hermanson, Philip Layne, Lyudmila Stone, Thomas Stacy
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Publication number: 20200083021Abstract: Disclosed is a semiconductor processing apparatus including one or more components having a conductive or nonconductive porous material. In some embodiments, an ion implanter may include a plurality of beam line components for directing an ion beam to a target, and a porous material along a surface of at least one of the plurality of beamline components.Type: ApplicationFiled: August 26, 2019Publication date: March 12, 2020Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: James Alan Pixley, Eric D. Hermanson, Philip Layne, Lyudmila Stone, Thomas Stacy
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Publication number: 20200083027Abstract: Disclosed is a semiconductor processing apparatus including one or more components having a conductive or nonconductive foam material. In some embodiments, the component is a plasma flood gun including a shield assembly coupled to the plasma flood gun. The shield assembly may include a first shield having a first main side facing an ion beam target, and a connection block coupled to a second main side of the first shield. The shield assembly may further include a mounting plate coupled to the connection block, and a second shield coupled to the mounting plate by a bracket. In some embodiments, the first shield and/or one or more process chamber walls includes a foam material, such as a conductive or nonconductive foam.Type: ApplicationFiled: October 16, 2018Publication date: March 12, 2020Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: James Alan Pixley, Eric D. Hermanson, Philip Layne, Lyudmila Stone, Thomas Stacy
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Patent number: 10385454Abstract: In one embodiment, a method of fabricating an electrostatic clamp includes forming an insulator body, forming an electrode on the insulator body, and depositing a layer stack on the electrode, the layer stack comprising an aluminum oxide layer that is deposited using atomic layer deposition (ALD).Type: GrantFiled: March 3, 2017Date of Patent: August 20, 2019Assignees: Varian Semiconductor Equipment Associates, Inc., Entegris, Inc.Inventors: Dale K. Stone, Richard Cooke, I-Kuan Lin, Julian G. Blake, Lyudmila Stone
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Publication number: 20190252230Abstract: An apparatus to support a substrate may include a base and an insulator portion adjacent to the base and configured to support a surface of the substrate. The apparatus may also include an electrode system to apply a clamping voltage to the substrate, wherein the insulator portion is configured to provide a gas to the substrate through at least one channel that has a channel width, wherein a product of the gas pressure and channel width is less than a Paschen minimum for the gas, where the Paschen minimum is a product of pressure and separation of surfaces of an enclosure at which a breakdown voltage of the gas is a minimum.Type: ApplicationFiled: April 29, 2019Publication date: August 15, 2019Inventors: Dale K. Stone, Julian G. Blake, Lyudmila Stone
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Publication number: 20170335460Abstract: In one embodiment, a method of fabricating an electrostatic clamp includes forming an insulator body, forming an electrode on the insulator body, and depositing a layer stack on the electrode, the layer stack comprising an aluminum oxide layer that is deposited using atomic layer deposition (ALD).Type: ApplicationFiled: March 3, 2017Publication date: November 23, 2017Inventors: Dale K. Stone, Richard Cooke, I-Kuan Lin, Julian G. Blake, Lyudmila Stone
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Patent number: 9692325Abstract: In accordance with an embodiment of the invention, there is provided an electrostatic chuck comprising a conductive path covering at least a portion of a workpiece-contacting surface of a gas seal ring of the electrostatic chuck, the conductive path comprising at least a portion of an electrical path to ground; and a main field area of a workpiece-contacting surface of the electrostatic chuck comprising a surface resistivity in the range of from about 108 to about 1012 ohms per square.Type: GrantFiled: September 8, 2011Date of Patent: June 27, 2017Assignees: Entegris, Inc., Varian Semiconductor Equipment Associates, Inc.Inventors: David Suuronen, Lyudmila Stone, Julian Blake, Dale K. Stone, Richard A. Cooke, Steven Donnell, Chandra Venkatraman
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Patent number: 9644269Abstract: In one embodiment, a method of fabricating an electrostatic clamp includes forming an insulator body, forming an electrode on the insulator body, and depositing a layer stack on the electrode, the layer stack comprising an aluminum oxide layer that is deposited using atomic layer deposition (ALD).Type: GrantFiled: May 16, 2014Date of Patent: May 9, 2017Assignee: Varian Semiconductor Equipment Associates, IncInventors: Dale K. Stone, Richard Cooke, I-Kuan Lin, Julian G. Blake, Lyudmila Stone
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Patent number: 9633875Abstract: An apparatus for improving the temperature uniformity of a workpiece during processing is disclosed. The apparatus includes a platen having a separately controlled edge heater capable to independently heating the outer edge of the platen. In this way, additional heat may be supplied near the outer edge of the platen, helping to maintain a constant temperature across the entirety of the platen. This edge heater may be disposed on an outer surface of the platen, or may, in certain embodiments, be embedded in the platen. In certain embodiments, the edge heater and the primary heating element are disposed in two different planes, where the edge heater is disposed closer to the top surface of the platen than the primary heating element.Type: GrantFiled: March 13, 2015Date of Patent: April 25, 2017Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Dawei Sun, D. Jeffrey Lischer, Steven M. Anella, Dale K. Stone, Lyudmila Stone
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Publication number: 20160268150Abstract: An apparatus for improving the temperature uniformity of a workpiece during processing is disclosed. The apparatus includes a platen having a separately controlled edge heater capable to independently heating the outer edge of the platen. In this way, additional heat may be supplied near the outer edge of the platen, helping to maintain a constant temperature across the entirety of the platen. This edge heater may be disposed on an outer surface of the platen, or may, in certain embodiments, be embedded in the platen. In certain embodiments, the edge heater and the primary heating element are disposed in two different planes, where the edge heater is disposed closer to the top surface of the platen than the primary heating element.Type: ApplicationFiled: March 13, 2015Publication date: September 15, 2016Inventors: Dawei Sun, D. Jeffrey Lischer, Steven M. Anella, Dale K. Stone, Lyudmila Stone
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Publication number: 20150228524Abstract: An apparatus to support a substrate may include a base and an insulator portion adjacent to the base and configured to support a surface of the substrate. The apparatus may also include an electrode system to apply a clamping voltage to the substrate, wherein the insulator portion is configured to provide a gas to the substrate through at least one channel that has a channel width, wherein a product of the gas pressure and channel width is less than a Paschen minimum for the gas, where the Paschen minimum is a product of pressure and separation of surfaces of an enclosure at which a breakdown voltage of the gas is a minimum.Type: ApplicationFiled: February 12, 2014Publication date: August 13, 2015Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Dale K. Stone, Julian G. Blake, Lyudmila Stone
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Publication number: 20150214087Abstract: In one embodiment, a method of fabricating an electrostatic clamp includes forming an insulator body, forming an electrode on the insulator body, and depositing a layer stack on the electrode, the layer stack comprising an aluminum oxide layer that is deposited using atomic layer deposition (ALD).Type: ApplicationFiled: May 16, 2014Publication date: July 30, 2015Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Dale K. Stone, Richard Cooke, I-Kuan Lin, Julian G. Blake, Lyudmila Stone
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Patent number: 9082804Abstract: An electrostatic clamp which more effectively removes built up charge from a substrate prior to removal is disclosed. Currently, the lift pins and the ground pins are the only mechanism used to remove charge from the substrate after implantation. The present discloses describes an electrostatic chuck in which the top dielectric surface has an embedded conductive region, such as a ring shaped conductive region in the sealing ring. Thus, regardless of the orientation of the substrate during release, at least a portion of the substrate will contain the conductive region on the dielectric layer of the workpiece support. This conductive region may be connected to ground through the use of conductive vias in the dielectric layer. In some embodiments, these conductive vias are the fluid conduits used to supply gas to the back side of the substrate.Type: GrantFiled: February 7, 2011Date of Patent: July 14, 2015Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Julian Blake, Dale K. Stone, Lyudmila Stone, David Suuronen, Shigeo Oshiro
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Patent number: 9025305Abstract: In accordance with an embodiment of the invention, there is provided an electrostatic chuck. The electrostatic chuck comprises an electrode, and a surface layer activated by a voltage in the electrode to form an electric charge to electrostatically clamp a substrate to the electrostatic chuck, the surface layer including a charge control layer comprising a surface resistivity of greater than about 1011 ohms per square.Type: GrantFiled: May 24, 2011Date of Patent: May 5, 2015Assignees: Entegris, Inc., Varian Semiconductor Equipment Associates, Inc.Inventors: Richard A. Cooke, Dale K. Stone, Lyudmila Stone, Julian Blake, David Suuronen
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Publication number: 20140318455Abstract: An electrostatic chuck includes a heater and an electrode disposed on the heater. The electrostatic chuck also includes an insulator layer and coating disposed on the insulator, where the coating is configured to support an electrostatic field generated by the electrode system to attract a substrate thereto.Type: ApplicationFiled: April 26, 2013Publication date: October 30, 2014Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Julian G. Blake, Dale K. Stone, Lyudmila Stone, Michael Schrameyer
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Patent number: 8531814Abstract: An electrostatic clamp, which more effectively removes built up charge from a substrate prior to and during removal, is disclosed. Currently, the lift pins and ground pins are the only mechanisms used to remove charge from the substrate after implantation. The present discloses describes a clamp having one of more additional low resistance paths to ground. These additional conduits allow built up charge to be dissipated prior to and during the removal of the substrate from the clamp. By providing sufficient charge drainage from the backside surface of the substrate 114, the problem whereby the substrate sticks to the clamp can be reduced. This results in a corresponding reduction in substrate breakage.Type: GrantFiled: April 14, 2010Date of Patent: September 10, 2013Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Dale K. Stone, Lyudmila Stone, Klaus Petry, David E. Suuronen, Julian G. Blake