Abstract: In accordance with an embodiment of the invention, there is provided an electrostatic chuck comprising a conductive path covering at least a portion of a workpiece-contacting surface of a gas seal ring of the electrostatic chuck, the conductive path comprising at least a portion of an electrical path to ground; and a main field area of a workpiece-contacting surface of the electrostatic chuck comprising a surface resistivity in the range of from about 108 to about 1012 ohms per square.

Abstract: In accordance with an embodiment of the invention, there is provided an electrostatic chuck. The electrostatic chuck comprises an electrode, and a surface layer activated by a voltage in the electrode to form an electric charge to electrostatically clamp a substrate to the electrostatic chuck, the surface layer including a charge control layer comprising a surface resistivity of greater than about 1011 ohms per square.

Abstract: A method for cleaning a workpiece support that includes using a workpiece that has been coated on its bottom surface with a suitable material is disclosed. This specially coated workpiece is placed on the support, and some time later, it is removed, taking with it particles from the support. In certain embodiments, the workpiece undergoes an ion implantation process to increase its temperature, and to increase the tackiness of the coating on the bottom surface. The material used to coat the bottom can be of variable types, including photoresists, oxides and deposited glasses.

Abstract: A method for cleaning a workpiece support that includes using a workpiece that has been coated on its bottom surface with a suitable material is disclosed. This specially coated workpiece is placed on the support, and some time later, it is removed, taking with it particles from the support. In certain embodiments, the workpiece undergoes an ion implantation process to increase its temperature, and to increase the tackiness of the coating on the bottom surface. The material used to coat the bottom can be of variable types, including photoresists, oxides and deposited glasses.

Abstract: An electrostatic clamp which more effectively removes built up charge from a substrate prior to removal is disclosed. Currently, the lift pins and the ground pins are the only mechanism used to remove charge from the substrate after implantation. The present discloses describes an electrostatic chuck in which the top dielectric surface has an embedded conductive region, such as a ring shaped conductive region in the sealing ring. Thus, regardless of the orientation of the substrate during release, at least a portion of the substrate will contain the conductive region on the dielectric layer of the workpiece support. This conductive region may be connected to ground through the use of conductive vias in the dielectric layer. In some embodiments, these conductive vias are the fluid conduits used to supply gas to the back side of the substrate.

Abstract: An embossed platen to control charge accumulation includes a dielectric layer, a plurality of embossments on a surface of the dielectric layer to support a workpiece, each of a first plurality of the plurality of embossments having a conductive portion to contact a backside of the workpiece when the workpiece is in a clamped position, and a conductor to electrically couple the conductive portion of the first plurality of embossments to ground. An ion implanter having such an embossed platen is also provided.

Abstract: An electrostatic clamp, which more effectively removes built up charge from a substrate prior to and during removal, is disclosed. Currently, the lift pins and ground pins are the only mechanisms used to remove charge from the substrate after implantation. The present discloses describes a clamp having one of more additional low resistance paths to ground. These additional conduits allow built up charge to be dissipated prior to and during the removal of the substrate from the clamp. By providing sufficient charge drainage from the backside surface of the substrate 114, the problem whereby the substrate sticks to the clamp can be reduced. This results in a corresponding reduction in substrate breakage.

Abstract: Liner elements designed to protect the components located in the beam line are disclosed. These liner elements, preferably constructed from graphite, are coated with a non-metal material, such as silicon, silicon carbide or diamond like carbon. These coatings significantly reduce the loose particles created by the liner. Therefore, following preventative maintenance, the ion implantation system can return to normal operation sooner. A method of providing preventative maintenance for an ion implanter is also disclosed, whereby used liners are cleaned and recoated before being used again.

Abstract: Electrostatic clamping devices and methods for reducing contamination to a workpiece coupled to an electrostatic clamping device are disclosed. According to an embodiment an electrostatic clamping device for coupling a workpiece comprises: an embossment portion on a surface of a body to contact the workpiece; and at least two electrodes within the body; wherein the two electrodes are separated by a separation portion below the embossment portion.

Abstract: A method for cleaning a workpiece support that includes using a workpiece that has been coated on its bottom surface with a suitable material is disclosed. This specially coated workpiece is placed on the support, and some time later, it is removed, taking with it particles from the support. In certain embodiments, the workpiece undergoes an ion implantation process to increase its temperature, and to increase the tackiness of the coating on the bottom surface. The material used to coat the bottom can be of variable types, including photoresists, oxides and deposited glasses.

Abstract: This device has a liner disposed on a face in a vacuum chamber. A component in the vacuum chamber defines the face. The liner is configured to protect the workpiece from contamination or to prevent blistering of the face caused by implantation of atoms or ions into the face. The liner may be disposable and removed from the face in the vacuum chamber and replaced with a new liner in some embodiments. This liner may be a polymer with a roughened surface, be carbon-based, or be composed of carbon nanotubes in some embodiments.

Abstract: An electrostatic chuck includes a layer having a plurality of protrusions to support a workpiece, wherein at least a portion of the layer has a first plurality of the plurality of protrusions. The first plurality of protrusions is spaced to geometrically form a pattern of hexagons. The first plurality of protrusions may be spaced an equal distance from adjacent protrusions and the equal distance may be about 4.0 millimeters from a center of one protrusion to a center of another protrusion. The present disclosure reduces peak mechanical stress levels conventionally present along an edge of each protrusion. Reducing such mechanical stress levels helps reduce backside damage to a supported workpiece, which in turn can reduce the generation of unwanted particles caused by such damage.

Abstract: Techniques for handling substrates are disclosed. In one particular exemplary embodiment, the techniques may be realized as a substrate support. The substrate support may comprise a mounting portion. The substrate support may also comprise a wall extending from the mounting portion, wherein the wall may form a generally enclosed area and may have a contact surface at a distal end.

Abstract: Electrostatic clamping devices and methods for reducing contamination to a workpiece coupled to an electrostatic clamping device are disclosed. According to an embodiment an electrostatic clamping device for coupling a workpiece comprises: an embossment portion on a surface of a body to contact the workpiece; and at least two electrodes within the body; wherein the two electrodes are separated by a separation portion below the embossment portion.

Abstract: A control for pressurizing a load lock. The control initiates pressurization of the loadlock interior by coupling a source of gas to the loadlock interior. A representative load lock includes a pressure sensor and multiple valves to atmosphere where at least one such valves is a passthrough valve for removal of and insertion of workpieces from and into a load lock interior. A second fast acting valve also opens to atmosphere. A pressure rise inside the loadlock interior is monitored and when the pressure reaches a threshold pressure above atmosphere the fast acting valve is opened to atmosphere. This second fast acting valve is configured to relieve overpressure from the passthrough valve prior to opening of said passthrough valve. Workpiece movement is accomplished with the aid of a robot which reaches into the loadlock interior as it is either depositing workpieces or retrieving them.

Abstract: A control for pressurizing a load lock. The control initiates pressurization of the loadlock interior by coupling a source of gas to the loadlock interior. A representative load lock includes a pressure sensor and multiple valves to atmosphere where at least one such valves is a passthrough valve for removal of and insertion of workpieces from and into a load lock interior. A second fast acting valve also opens to atmosphere. A pressure rise inside the loadlock interior is monitored and when the pressure reaches a threshold pressure above atmosphere the fast acting valve is opened to atmosphere. This second fast acting valve is configured to relieve overpressure from the passthrough valve prior to opening of said passthrough valve. Workpiece movement is accomplished with the aid of a robot which reaches into the loadlock interior as it is either depositing workpieces or retrieving them.

Abstract: An ion beam implanter includes ion beam forming and directing apparatus and an implantation station where workpieces are implanted with ions from an ion beam. The beam travels along an evacuated path from an ion source to the implantation station. A flexible bellows couples the implantation station to the beam forming and directing apparatus permitting the implantation station to be pivoted with respect to the beam forming and directing apparatus and thereby change an implantation orientation of the workpieces with respect to the ion beam. A replaceable, flexible bellows liner is disposed within an interior region of the bellows to reduce the volume of implantation byproducts deposited on an interior surface of the bellows.

Abstract: The present invention is directed to in-situ detection of particles and other such features in an ion implantation system during implantation operations to avoid such additional monitoring tool steps otherwise expended before and/or after implantation, for example. One or more such systems are revealed for detecting scattered light from particles on one or more semiconductor wafers illuminated by a light source (e.g., laser beam). The system comprises an ion implanter having a laser for illumination of a spot on the wafer and a pair of detectors (e.g., PMT or photodiode) rotationally opposite from the ion implantation operations. A wafer transport holds a wafer or wafers for translational scanning under the fixed laser spot. A computer analyzes the intensity of the scattered light detected from the illuminated wafer (workpiece), and may also map the light detected to a unique position.

Abstract: An ion beam implanter includes ion beam forming and directing apparatus and an implantation station where workpieces are implanted with ions from an ion beam. The beam travels along an evacuated path from an ion source to the implantation station. A flexible bellows couples the implantation station to the beam forming and directing apparatus permitting the implantation station to be pivoted with respect to the beam forming and directing apparatus and thereby change an implantation orientation of the workpieces with respect to the ion beam. A replaceable, flexible bellows liner is disposed within an interior region of the bellows to reduce the volume of implantation byproducts deposited on an interior surface of the bellows.

Abstract: The present invention is directed to in-situ detection of particles and other such features in an ion implantation system during implantation operations to avoid such additional monitoring tool steps otherwise expended before and/or after implantation, for example. One or more such systems are revealed for detecting scattered light from particles on one or more semiconductor wafers illuminated by a light source (e.g., laser beam). The system comprises an ion implanter having a laser for illumination of a spot on the wafer and a pair of detectors (e.g., PMT or photodiode) rotationally opposite from the ion implantation operations. A wafer transport holds a wafer or wafers for translational scanning under the fixed laser spot. A computer analyzes the intensity of the scattered light detected from the illuminated wafer (workpiece), and may also map the light detected to a unique position.