Abstract: The present invention relates to a novel photoresist composition that can be developed with an aqueous alkaline solution, and is capable of being imaged at exposure wavelengths in the deep ultraviolet. The invention also relates to a process for imaging the novel photoresist as well as novel photoacid generators.

Abstract: The present invention relates to a novel photoresist that can be developed with an aqueous alkaline solution, and is capable of being imaged at exposure wavelengths in the deep ultraviolet. The invention also relates to a process for imaging the novel photoresist.

Abstract: The present invention provides a method for producing a film forming resin suitable for use in a photoresist composition, involving the following steps: (a) providing a solution of a film forming resin in a solvent; (b) providing the following two filter sheets: (i) a filter sheet containing a self-supporting fibrous matrix having immobilized therein a particulate filter aid and particulate ion exchange resin particles, where the particulate filter aid and ion exchange resin particles are distributed substantially uniformly throughout a cross-section of said matrix; and (ii) a filter sheet containing a self-supporting matrix of fibers having immobilized therein particulate filter aid and binder resin; (c) rinsing the filter sheets of step (b) with the solvent of step (a); and (d) passing the solution of the film forming resin through the rinsed filter sheets of step (c).

Abstract: Disclosed is a method for producing low molecular weight oligomers of a film forming resin, which involves: a) providing a solution of the film forming resin in a first solvent system comprising a photoresist solvent, and optionally a water-soluble organic solvent; b) providing a second solvent system comprising at least one substantially pure C5-C8 alkane and/or at least one aromatic compound having at least one hydrocarbyl substituent and/or water/C1-C4 alcohol mixture; and performing steps c)-e) in the following order: c) mixing the solutions from a) and second solvent system from b) in a static mixer for a time period sufficient for efficient mixing; d) feeding the mixture from c) and second solvent system from b) through two separate inlet ports into a liquid/liquid centrifuge, one of the inlet ports feeding the mixture from c), the second inlet port feeding the second solvent system from b) into said liquid/liquid centrifuge at a feed ratio of the mixture from c) to the second solvent system from b) of

Abstract: The present invention provides a method for producing a film forming resin suitable for use in a photoresist composition, involving the following steps: (a) providing a solution of a film forming resin in a solvent, the film forming resin made by polymerizing at least one monomer containing a cycloolefin or an acid labile acrylate or a methacrylate; (b) providing at least one of the following two filter sheets: (i) a filter sheet containing a self-supporting fibrous matrix having immobilized therein a particulate filter aid (which has preferably been acid-washed) and particulate ion exchange resin particles having an average particle size of from about 2 to about 10 microns, where the particulate filter aid and ion exchange resin particles are distributed substantially uniformly throughout a cross-section of said matrix; and/or (ii) a filter sheet containing a self-supporting matrix of fibers (preferably cellulose) having immobilized therein particulate filter aid and binder resin, the filter sheet preferably

Abstract: The present invention relates to a chemically amplified system, which is, sensitive to wavelengths between 300 nm and 100 nm, and comprises a) a polymer that is insoluble an aqueous alkaline solution and comprises at least one acid labile group, b) a compound capable of producing an acid upon radiation. The present invention comprises a polymer that is made from a alicyclic hydrocarbon olefin, an acrylate with a pendant cyclic moeity, and a cyclic anhydride. The present invention also relates to a process for imaging such a photoresist.

Abstract: The present invention provides a method for reducing the metal ion content of a film-forming resin, said method comprising the steps of: a) providing a solution of the film-forming resin in a water-immiscible solvent system comprising at least one water-immiscible solvent; b) providing a washing solution comprising water or a dilute solution of a water-soluble metal ion chelating agent; c) feeding the solutions from a) and b) through two separate inlet ports into a liquid/liquid centrifuge, one of said inlet ports feeding solution from a), the second inlet port feeding the solution from b) into said liquid/liquid centrifuge at a feed rate ratio of the solution from a) to that from b) from about 10/90 to about 90/10, at a temperature of from about 0° C.

Abstract: A water insoluble, aqueous alkali soluble novolak resin, process for producing such a novolak resin, a photoresist containing such a novolak resin, and a method for producing a semiconductor device, wherein the resin is isolated by sub surface forced steam distillation.

Abstract: The present invention provides a method for producing a film forming, fractionated novolak resin, by:a) condensing formaldehyde with one or more phenolic compounds, and thereby producing a novolak resin;b) adding a photoresist solvent, and optionally a water-soluble organic polar solvent;c) feeding the mixture into a liquid/liquid centrifuge and feeding a C.sub.5 -C.sub.8 alkane, water or aromatic hydrocarbon solvent into the liquid/liquid centrifuge at a ratio of optional water-soluble organic polar solvent and photoresist solvent to C.sub.5 -C.sub.8 alkane, water or aromatic solvent, of from 5:1 to 0.5:1;d) rotating the liquid/liquid centrifuge containing the mixture at a speed of at least 500 rpm and thereby separating the mixture into two phases, collecting the two phases;e) optionally separating the lighter phase (L) into two second phases;f) removing residual C.sub.5 -C.sub.

Abstract: The present invention relates to an antireflective coating composition comprising an admixture of:a) a polymer defined by the following structure: ##STR1## where, R.sub.1 & R.sub.2 are independently hydrogen, or C.sub.1 to C.sub.5 alkylR.sub.3 is a methyl, ethyl, propyl or butyl groupR.sub.4 -R.sub.7 are independently hydrogen, or C.sub.1 to C.sub.5 alkyln=10 to 50,000(b) a fluorine-containing, sparingly water-soluble (0.1%-10% by weight in water) organic C.sub.3 -C.sub.13 aliphatic carboxylic acid;(c) a non-metallic hydroxide; and(d) a solvent.The invention also relates to a method for producing such an antireflective coating composition and to a method for producing a microelectronic device using such an antireflective coating composition in conjunction with a photoresist composition.

Abstract: The present invention provides a method for producing a film forming, fractionated novolak resin having consistent molecular weight and superior performance in photoresist composition, by isolating such novolak resin fractions without high temperature distillation. A method is also provided for producing photoresist composition from such a fractionated novolak resin and for producing semiconductor devices using such a photoresist composition.

Abstract: The present invention provides a method for producing a water insoluble, aqueous alkali soluble novolak resins having consistent molecular weight and superior performance in photoresist composition, by isolating such novolak resin without high temperature distillation. A method is also provided for producing photoresist composition from such a novolak resin and for producing semiconductor devices using such a photoresist composition.

Abstract: The present invention provides a method for producing a film forming, fractionated novolak resin having consistent molecular weight and superior performance in photoresist composition, by isolating such a novolak resin fraction. A method is also provided for producing photoresist composition from such a fractionated novolak resin and for producing semiconductor devices using such a photoresist composition.

Abstract: The present invention provides methods for producing water insoluble, aqueous alkali soluble novolak resins having a very low level of metal ions, utilizing a specially treated anion exchange resin. A method is also provided for producing photoresist composition having a very low level of metal ions from such novolak resins and for producing semiconductor devices using such photoresist compositions.

Abstract: A process for producing a deionizing resin, which comprises reacting an organic compound having at least one reactive hydroxy group and at least one active chelating site with an organic polymer matrix having at least one reactive --OH or --NH.sub.2 group, and thereby producing a chelated.sub.-- polymer complex, as shown in FIG. II or FIG. IV: ##STR1## Washing the polymer complex with water, followed by washing with a mineral acid solution and then again washing with water and thereby reducing the level of sodium, iron and chromium ions in the polymer complex to less than 100 ppb each.

Abstract: The present invention relates to an antireflective coating composition comprising a novel polymer in a solvent composition. The invention further comprises processes for using the antireflective coating composition in photolithography. The antireflective coating composition comprises a novel polymer and a solvent composition, where the novel polymer of the antireflective coating comprises at least one unit containing a dye that absorbs from about 180 nm to about 450 nm and at least one unit that contains no aromatic funtionality. The solvent may be organic, preferrably, a solvent of low toxicity, or it may be water, which may additionally contain other water miscible organic solvents.

Abstract: The present invention relates to a novel polymer suitable for use as an antireflective coating or as an additive in photoresist for absorption of reflected light. The novel polymer comprises at least one unit containing a dye that absorbs from about 180 nm to about 450 nm and at least one unit that contains no aromatic funtionality. The polymer is soluble in organic solvents, preferrably solvents of low toxicity, or it may be soluble in water, which may additionally contain other water miscible organic solvents.

Abstract: A process for producing a water insoluble, aqueous alkali soluble, film forming novolak resin having low metal ions, made by the fractionation of a phenol formaldehyde condensation product, a process for producing a resin a photoresist composition of superior quality containing such novolak resin, and a method for producing a semiconductor device using such photoresist composition.

Abstract: The present invention provides a method for producing a film forming, fractionated novolak resin having consistent molecular weight and superior performance in photoresist composition, by isolating such novolak resin fractions without high temperature distillation. A method is also provided for producing photoresist composition from such a fractionated novolak resin and for producing semiconductor devices using such a photoresist composition.

Abstract: The present invention provides methods for producing a photoresist having a very low level of metal ions, utilizing a treated chelating ion exchange resins to make the neutral ammonium salt or acid form. A method is also provided for producing semiconductor devices using such photoresist compositions.