Patents by Inventor M. Saif Islam
M. Saif Islam has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250028030Abstract: A back-illuminated photo detector array (PDA) includes a front side and a back side. The back side receives optical energy incident on the back side at an incident direction. The front side includes a detection layer that includes detection structures and a plurality of photon-trapping nanostructures (PTN). The PTN cause optical energy incident on the back side to disperse in a direction perpendicular to the incident direction, and thereby improve an absorption efficiency of the back-illuminated PDA.Type: ApplicationFiled: July 18, 2023Publication date: January 23, 2025Inventors: Bora Onat, M. Saif Islam
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Patent number: 10468543Abstract: Microstructure enhanced photodiodes and avalanche photodiodes are monolithically integrated with CMOS/BiCMOS circuitry such as transimpedance amplifiers. Microstructures, such as holes, can improve quantum efficiency in silicon and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.Type: GrantFiled: March 8, 2019Date of Patent: November 5, 2019Assignee: W&Wsens Devices, Inc.Inventors: Shih-Yuan Wang, Shih-Ping Wang, M. Saif Islam
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Patent number: 10446700Abstract: Microstructure enhanced photodiodes and avalanche photodiodes are monolithically integrated with CMOS/BiCMOS circuitry such as transimpedance amplifiers. Microstructures, such as holes, can improve quantum efficiency in silicon and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.Type: GrantFiled: October 30, 2017Date of Patent: October 15, 2019Assignee: W&Wsens Devices, Inc.Inventors: Shih-Yuan Wang, Shih-Ping Wang, M. Saif Islam
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Publication number: 20190288132Abstract: Microstructure enhanced photodiodes and avalanche photodiodes are monolithically integrated with CMOS/BiCMOS circuitry such as transimpedance amplifiers. Microstructures, such as holes, can improve quantum efficiency in silicon and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.Type: ApplicationFiled: March 8, 2019Publication date: September 19, 2019Inventors: Shih-Yuan WANG, Shih-Ping WANG, M. Saif ISLAM
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Publication number: 20180161998Abstract: A blade is described. This blade includes a substrate having two surfaces that meet at a cutting edge of the blade. At a given location along a length of the cutting edge, the two surfaces are at an angle with respect to one another. Moreover, angles between the two surfaces are different at at least two locations along the length of the blade. In particular, the angles between the two surfaces may vary along the length of the blade. Furthermore, the blade may include islands having top surfaces positioned at other locations along the length of the blade. These islands may protrude above the cutting edge to protect skin of a user when the blade is used to cut hair. In addition, the islands may include fluidic channels that provide a fluid (such as air or a lubricant) at the top surfaces of the islands when the blade is used.Type: ApplicationFiled: February 12, 2018Publication date: June 14, 2018Applicant: The Regents of the University of CaliforniaInventors: M. Saif Islam, Logeeswaran Veerayah Jayaraman
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Publication number: 20180102442Abstract: Microstructure enhanced photodiodes and avalanche photodiodes are monolithically integrated with CMOS/BiCMOS circuitry such as transimpedance amplifiers. Microstructures, such as holes, can improve quantum efficiency in silicon and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.Type: ApplicationFiled: October 30, 2017Publication date: April 12, 2018Inventors: Shih-Yuan WANG, Shih-Ping WANG, M. Saif Islam
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Publication number: 20160016322Abstract: A blade is described. This blade includes a substrate having two surfaces that meet at a cutting edge of the blade. At a given location along a length of the cutting edge, the two surfaces are at an angle with respect to one another. Moreover, angles between the two surfaces are different at at least two locations along the length of the blade. In particular, the angles between the two surfaces may vary along the length of the blade. Furthermore, the blade may include islands having top surfaces positioned at other locations along the length of the blade. These islands may protrude above the cutting edge to protect skin of a user when the blade is used to cut hair. In addition, the islands may include fluidic channels that provide a fluid (such as air or a lubricant) at the top surfaces of the islands when the blade is used.Type: ApplicationFiled: March 14, 2014Publication date: January 21, 2016Applicant: The Regents of the University of CaliforniaInventors: M. Saif Islam, Logeeswaran Veerayah Jayaraman
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Patent number: 9235102Abstract: A device for manipulating colloidal particles in a bistable medium, the device includes a microcontroller, which stores a color and/or design scheme for a bistable medium, and a mechanism for changing the bistable medium from a first state to a second state.Type: GrantFiled: August 22, 2011Date of Patent: January 12, 2016Assignee: IDEA ZOO, INC.Inventors: Pieter Stroeve, Ben Shand Farber, M. Saif Islam, Edmond Edward Routhier
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Publication number: 20130222889Abstract: A device for manipulating colloidal particles in a bistable medium, the device includes a microcontroller, which stores a color and/or design scheme for a bistable medium, and a mechanism for changing the bistable medium from a first state to a second state.Type: ApplicationFiled: August 22, 2011Publication date: August 29, 2013Applicant: IDEA ZOO, INC.Inventors: Pieter Stroeve, Ben Shand Farber, M. Saif Islam, Edmond Edward Routhier
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Patent number: 8357926Abstract: A gain-clamped semiconductor optical amplifier comprises: at least one first surface; at least one second surface, each second surface facing and electrically isolated from a respective first surface; a plurality of nanowires connecting each opposing pair of the first and second surfaces in a bridging configuration; and a signal waveguide overlapping the nanowires such that an optical signal traveling along the signal waveguide is amplified by energy provided by electrical excitation of the nanowires.Type: GrantFiled: June 1, 2012Date of Patent: January 22, 2013Assignee: Hewlett-Packard Development Company, L.P.Inventors: Shih-Yuan Wang, M. Saif Islam, Philip J. Kuekes, Nobuhiko Kobayashi
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Publication number: 20120243075Abstract: A gain-clamped semiconductor optical amplifier comprises: at least one first surface; at least one second surface, each second surface facing and electrically isolated from a respective first surface; a plurality of nanowires connecting each opposing pair of the first and second surfaces in a bridging configuration; and a signal waveguide overlapping the nanowires such that an optical signal traveling along the signal waveguide is amplified by energy provided by electrical excitation of the nanowires.Type: ApplicationFiled: June 1, 2012Publication date: September 27, 2012Inventors: Shih-Yuan WANG, M. Saif ISLAM, Philip J. KUEKES, Nobuhiko KOBAYASHI
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Patent number: 8212235Abstract: Nanowire-based opto-electronic devices including nanowire lasers, photodetectors and semiconductor optical amplifiers are disclosed. The devices include nanowires grown from single crystal and/or non-single surfaces. The semiconductor optical amplifiers include nanowire arrays that act as ballast lasers to amplify a signal carried by a signal waveguide. Embodiments of the nanowire lasers and photodetectors include horizontal and vertical nanowires that can provide different polarizations.Type: GrantFiled: April 25, 2007Date of Patent: July 3, 2012Assignee: Hewlett-Packard Development Company, L.P.Inventors: Shih-Yuan Wang, M. Saif Islam, Philip J. Kuekes, Nobuhiko Kobayashi
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Patent number: 8188494Abstract: One embodiment in accordance with the invention is an apparatus that can include a light emitting diode that is for of outputting light in the blue wavelength. Furthermore, the apparatus can also include a nanowire or nanoparticle coupled to a surface of the light emitting diode. Additionally, the apparatus can include an electrode coupled to the light emitting diode, wherein the nanowire or nanoparticle is for receiving and converting the light into red and green light that is output from the nanowire or nanoparticle.Type: GrantFiled: June 28, 2006Date of Patent: May 29, 2012Assignee: Hewlett-Packard Development Company, L.P.Inventors: Nobuhiko P. Kobayashi, Shih-Yuan Wang, M. Saif Islam
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Publication number: 20110249322Abstract: Nanowire-based opto-electronic devices including nanowire lasers, photodetectors and semiconductor optical amplifiers are disclosed. The devices include nanowires grown from single crystal and/or non-single surfaces. The semiconductor optical amplifiers include nanowire arrays that act as ballast lasers to amplify a signal carried by a signal waveguide. Embodiments of the nanowire lasers and photodetectors include horizontal and vertical nanowires that can provide different polarizations.Type: ApplicationFiled: April 25, 2007Publication date: October 13, 2011Inventors: Shih-Yuan Wang, M. Saif Islam, Philip J. Kuekes, Nobuhiko Kobayashi
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Patent number: 7989798Abstract: A patterned array of metallic nanostructures and fabrication thereof is described. A device comprises a patterned array of metallic columns vertically extending from a substrate. Each metallic column is formed by metallically coating one of an array of non-metallic nanowires catalytically grown from the substrate upon a predetermined lateral pattern of seed points placed thereon according to a nanoimprinting process. An apparatus for fabricating a patterned array of metallic nanostructures is also described.Type: GrantFiled: July 27, 2009Date of Patent: August 2, 2011Assignee: Hewlett-Packard Development Company, L.P.Inventors: Philip J Kuekes, M. Saif Islam, Shih-Yuan Wang, Alexandre M. Bratkovski
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Publication number: 20110036396Abstract: One embodiment of the present invention provides a process for fabricating multiple devices on a single substrate based on a structure transfer process. During operation, the process starts by forming structures of multiple devices on a first substrate. The process then bonds the structures of the multiple devices onto a second substrate. Next, the process transfers the multiple devices from the first substrate onto the second substrate by fracturing the structures of the multiple devices off the first substrate, wherein the transferred devices preserve physical orientation and material properties of the said fabricated structures.Type: ApplicationFiled: April 30, 2009Publication date: February 17, 2011Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIAInventors: Logeeswaran Veerayah Jayaraman, Aaron M. Katzenmeyer, M. Saif Islam
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Patent number: 7692179Abstract: A nano-scale device and method of fabrication provide a nanowire having (111) vertical sidewalls. The nano-scale device includes a semiconductor-on-insulator substrate polished in a [110] direction, the nanowire, and an electrical contact at opposite ends of the nanowire. The method includes wet etching a semiconductor layer of the semiconductor-on-insulator substrate to form the nanowire extending between a pair of islands in the semiconductor layer. The method further includes depositing an electrically conductive material on the pair of islands to form the electrical contacts. A nano-pn diode includes the nanowire as a first nano-electrode, a pn-junction vertically stacked on the nanowire, and a second nano-electrode on a (110) horizontal planar end of the pn-junction. The nano-pn diode may be fabricated in an array of the diodes on the semiconductor-on-insulator substrate.Type: GrantFiled: July 9, 2004Date of Patent: April 6, 2010Assignee: Hewlett-Packard Development Company, L.P.Inventors: M. Saif Islam, Yong Chen, Shih-Yuan Wang, R. Stanley Williams
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Patent number: 7692840Abstract: An apparatus for controlling propagation of incident electromagnetic radiation is described, comprising a composite material having electromagnetically reactive cells of small dimension relative to a wavelength of the incident electromagnetic radiation. At least one of a capacitive and inductive property of at least one of the electromagnetically reactive cells is temporally controllable to allow temporal control of an associated effective refractive index encountered by the incident electromagnetic radiation while propagating through the composite material.Type: GrantFiled: June 4, 2008Date of Patent: April 6, 2010Assignee: Hewlett-Packard Development Company, L.P.Inventors: Philip J Kuekes, Shih-Yuan Wang, Raymond G Beausoleil, Alexandre M. Bratkovski, Wei Wu, M. Saif Islam
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Publication number: 20090294755Abstract: A patterned array of metallic nanostructures and fabrication thereof is described. A device comprises a patterned array of metallic columns vertically extending from a substrate. Each metallic column is formed by metallically coating one of an array of non-metallic nanowires catalytically grown from the substrate upon a predetermined lateral pattern of seed points placed thereon according to a nanoimprinting process. An apparatus for fabricating a patterned array of metallic nanostructures is also described.Type: ApplicationFiled: July 27, 2009Publication date: December 3, 2009Inventors: Philip J. Kuekes, M. Saif Islam, Shih-Yuan Wang, Alexandre M. Bratkovaski
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Patent number: 7609376Abstract: Irradiation devices and methods of amplification and irradiation are disclosed for displaying pixels and Surface Enhanced Raman Spectroscopy (SERS) analysis. The devices include an optical modulator, which may be configured for operation in a variably transmissive state. An active region may be formed in an optical waveguide with the optical modulator configured substantially adjacent at least one surface of the active region.Type: GrantFiled: January 5, 2005Date of Patent: October 27, 2009Assignee: Hewlett-Packard Development Company, L.P.Inventors: Shih-Yuan Wang, M. Saif Islam