Patents by Inventor M. Saif Islam

M. Saif Islam has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7507293
    Abstract: Fabrication of a photonic crystal is described. A patterned array of nanowires is formed, the nanowires extending outward from a surface, the nanowires comprising a catalytically grown nanowire material. Spaces between the nanowires are filled with a slab material, the patterned array of nanowires defining a patterned array of channels in the slab material. The nanowire material is then removed from the channels.
    Type: Grant
    Filed: March 31, 2005
    Date of Patent: March 24, 2009
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Zhiyong Li, R. Stanley Williams, M. Saif Islam, Philip J. Kuekes
  • Patent number: 7492979
    Abstract: A sensor apparatus includes a laser optically coupled to a photonic crystal structure configured to provide an evanescent field through a sensed medium region such that the photonic crystal structure functions as a cavity/resonator for the laser.
    Type: Grant
    Filed: September 27, 2004
    Date of Patent: February 17, 2009
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Shih-Yuan Wang, M. Saif Islam, Alex Bratkovski, Ray Beausoleil
  • Patent number: 7449776
    Abstract: Different types of cooling devices using nanowires are described. For example, a cooling device may include a plurality of diamond nanowires coupled to a surface. The diamond nanowires conduct heat energy from the surface and dissipate the heat energy into a neighboring fluid.
    Type: Grant
    Filed: May 10, 2005
    Date of Patent: November 11, 2008
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Shih-Yuan Wang, M. Saif Islam, Philip J. Kuekes
  • Publication number: 20080239462
    Abstract: An apparatus for controlling propagation of incident electromagnetic radiation is described, comprising a composite material having electromagnetically reactive cells of small dimension relative to a wavelength of the incident electromagnetic radiation. At least one of a capacitive and inductive property of at least one of the electromagnetically reactive cells is temporally controllable to allow temporal control of an associated effective refractive index encountered by the incident electromagnetic radiation while propagating through the composite material.
    Type: Application
    Filed: June 4, 2008
    Publication date: October 2, 2008
    Inventors: Philip J. Kuekes, Shih-Yuan Wang, Raymond G. Beausoleil, Alexandre M. Bratkovski, Wei Wu, M. Saif Islam
  • Patent number: 7405866
    Abstract: An apparatus for controlling propagation of incident electromagnetic radiation is described, comprising a composite material having electromagnetically reactive cells of small dimension relative to a wavelength of the incident electromagnetic radiation. At least one of a capacitive and inductive property of at least one of the electromagnetically reactive cells is temporally controllable to allow temporal control of an associated effective refractive index encountered by the incident electromagnetic radiation while propagating through the composite material.
    Type: Grant
    Filed: November 19, 2004
    Date of Patent: July 29, 2008
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Philip J Kuekes, Shih-Yuan Wang, Raymond G Beausoleil, Alexandre M. Bratkovski, Wei Wu, M. Saif Islam
  • Patent number: 7400665
    Abstract: A nano-colonnade VCSEL device and a method of fabrication utilize a nanowire column grown nearly vertically from a (111) horizontal surface of a first layer to another horizontal surface of a second layer to connect the layers. The VCSEL device includes a first layer having the (111) horizontal surface; a second layer; and an insulator support between the first layer and the second layer that separates the first layer from the second layer. A portion of the second layer overhangs the insulator support, such that a horizontal surface of the overhanging portion is spaced from and faces the (111) horizontal surface of the first layer. The VCSEL device further includes a nanowire column extending nearly vertically from the (111) horizontal surface to the facing horizontal surface, and distributed Bragg mirrors adjacent to opposite end of the nanowire column.
    Type: Grant
    Filed: March 21, 2005
    Date of Patent: July 15, 2008
    Assignee: Hewlett-Packard Developement Company, L.P.
    Inventors: Shih-Yuan Wang, M. Saif Islam, Raymond G. Beausoleil
  • Patent number: 7385691
    Abstract: Devices, systems, and methods for enhancing Raman spectroscopy and hyper-Raman are disclosed. A molecular analysis device for performing Raman spectroscopy comprises a substrate and a laser source disposed on the substrate. The laser source may be configured for emanating a laser radiation, which may irradiate an analyte disposed on a Raman enhancement structure. The Raman enhancement structure may be disposed on the substrate or apart from the substrate. The molecular analysis device also include a radiation receiver disposed on the substrate and configured for receiving a Raman scattered radiation, which may be generated by the irradiation of the analyte and Raman enhancement structure.
    Type: Grant
    Filed: January 27, 2005
    Date of Patent: June 10, 2008
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: M. Saif Islam, Shih-Yuan Wang, Wei Wu, Zhiyong Li, R. Stanley Williams
  • Patent number: 7372562
    Abstract: A system for performing nanostructure-enhanced Raman spectroscopy (NERS) includes a radiation source, a radiation detector configured to detect Raman scattered radiation scattered by an analyte, and a container configured to provide a sealed enclosure. The NERS system further includes a turbulence generating device configured to generate random dynamic motion of a plurality of nanoparticles within the container. A method for performing NERS includes providing a container configured to provide a sealed enclosure, providing a plurality of nanoparticles each comprising a NERS-active material and an analyte within the container, causing random dynamic motion of the plurality of nanoparticles and the analyte, irradiating the plurality of nanoparticles and the analyte with radiation, and detecting Raman scattered radiation scattered by the analyte.
    Type: Grant
    Filed: October 17, 2005
    Date of Patent: May 13, 2008
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: M. Saif Islam, Shih-Yuan Wang, R. Stanley Williams
  • Patent number: 7368395
    Abstract: An imprinting apparatus and method of fabrication provide a mold having a pattern for imprinting. The apparatus includes a semiconductor substrate polished in a [110] direction. The semiconductor substrate has a (110) horizontal planar surface and vertical sidewalls of a wet chemical etched trench. The sidewalls are aligned with and therefore are (111) vertical lattice planes of the semiconductor substrate. The semiconductor substrate includes a plurality of vertical structures between the sidewalls, wherein the vertical structures may be nano-scale spaced apart. The method includes wet etching a trench with spaced apart (111) vertical sidewalls in an exposed portion of the (110) horizontal surface of the semiconductor substrate along (111) vertical lattice planes. A chemical etching solution is used that etches the (111) vertical lattice planes slower than the (110) horizontal lattice plane. The method further includes forming the imprinting mold.
    Type: Grant
    Filed: November 16, 2006
    Date of Patent: May 6, 2008
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: M. Saif Islam, Gun Young Jung, Yong Chen, R. Stanley Williams
  • Patent number: 7342656
    Abstract: A NERS-active structure includes a deformable, active nanoparticle support structure for supporting a first nanoparticle and a second nanoparticle that is disposed proximate the first nanoparticle. The nanoparticles each comprise a NERS-active material. The deformable, active nanoparticle support structure is configured to vary the distance between the first nanoparticle and the second nanoparticle while performing NERS. Various active nanoparticle support structures are disclosed. A NERS system includes such a NERS-active structure, a radiation source for generating radiation scatterable by an analyte located proximate the NERS-active structure, and a radiation detector for detecting Raman scattered radiation scattered by the analyte.
    Type: Grant
    Filed: October 17, 2005
    Date of Patent: March 11, 2008
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: M. Saif Islam, Shih-Yuan Wang, R. Stanley Williams, Philip J. Kuekes, Wei Wu, Zhiyong Li
  • Patent number: 7339666
    Abstract: Structures for amplifying light include a resonant cavity in which an analyte may be positioned. The structures for amplifying light may be used to amplify the incident light employed in surface enhanced Raman spectroscopy (SERS). SERS systems employing the structures for amplifying light of the present invention and methods of performing SERS are also disclosed.
    Type: Grant
    Filed: September 14, 2004
    Date of Patent: March 4, 2008
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Shih-Yuan Wang, Zhiyong Li, M. Saif Islam
  • Patent number: 7329115
    Abstract: A nanoimprint mold is described, comprising a plurality of alternating layers of distinct materials differentially etched along an edge thereof, said layers having spatially varying thicknesses along said edge such that nanolines patterned with said nanoimprint mold have corresponding spatially varying pitches.
    Type: Grant
    Filed: February 18, 2005
    Date of Patent: February 12, 2008
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Shih-Yuan Wang, M. Saif Islam
  • Patent number: 7309642
    Abstract: A method for forming quantum dots includes forming a superlattice structure that includes at least one nanostrip protruding from the superlattice structure, providing a quantum dot substrate, transferring the at least one nanostrip to the quantum dot substrate, and removing at least a portion of the at least one nanostrip from the substrate. The superlattice structure is formed by providing a superlattice substrate, forming alternating layers of first and second materials on the substrate to form a stack, cleaving the stack to expose the alternating layers, and etching the exposed alternating layers with an etchant that etches the second material at a greater rate than the first to form the at least one nanostrip.
    Type: Grant
    Filed: November 9, 2005
    Date of Patent: December 18, 2007
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: William M. Tong, M. Saif Islam
  • Patent number: 7307271
    Abstract: A nano-colonnade structure-and methods of fabrication and interconnection thereof utilize a nanowire column grown nearly vertically from a (111) horizontal surface of a semiconductor layer to another horizontal surface of another layer to connect the layers. The nano-colonnade structure includes a first layer having the (111) horizontal surface; a second layer having the other horizontal surface; an insulator support between the first layer and the second layer that separates the first layer from the second layer. A portion of the second layer overhangs the insulator support, such that the horizontal surface of the overhanging portion is spaced from and faces the (111) horizontal surface of the first layer. The structure further includes a nanowire column extending nearly vertically from the (111) horizontal surface to the facing horizontal surface, such that the nanowire column connects the first layer to the second layer.
    Type: Grant
    Filed: November 5, 2004
    Date of Patent: December 11, 2007
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: M. Saif Islam, Philip J. Kuekes, Shih-Yuan Wang, Duncan R. Stewart, Shashank Sharma
  • Patent number: 7307719
    Abstract: Wavelength-tunable radiation amplifying structures for Raman spectroscopy are disclosed that include resonant cavities having Raman signal-enhancing structures disposed therein. Systems that include the amplifying structures and methods of performing spectroscopic analysis using the structures and systems are also disclosed.
    Type: Grant
    Filed: September 14, 2004
    Date of Patent: December 11, 2007
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Shih-Yuan Wang, M. Saif Islam, Zhiyong Li
  • Patent number: 7289221
    Abstract: A sensor apparatus includes a photonic crystal structure including a Mach Zehnder interferometer with a reference arm and a sensor arm configured to provide an evanescent field through a sensed medium region adjacent to the sensor arm.
    Type: Grant
    Filed: September 27, 2004
    Date of Patent: October 30, 2007
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Shih-Yuan Wang, M. Saif Islam, Alex Bratkovski
  • Patent number: 7289690
    Abstract: An apparatus for sensing at least one property of a fluid is described. A first photonic crystal structure and a second photonic crystal structure are defined in a dielectric slab. The first and second photonic crystal structures comprise differently patterned arrays of channels extending through the dielectric slab. The apparatus further comprises a fluid introduction device configured to introduce a common volume of the fluid into the channels of the first and second photonic crystal structures. The at least one property of the fluid can be sensed by measuring the propagation of radiation through the first and second photonic crystal structures.
    Type: Grant
    Filed: April 15, 2005
    Date of Patent: October 30, 2007
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Zhiyong Li, Raymond G. Beausoleil, Philip J. Kuekes, Shih-Yuan Wang, M. Saif Islam
  • Patent number: 7208094
    Abstract: A semiconductor nanowire is grown laterally. A method of growing the nanowire forms a vertical surface on a substrate, and activates the vertical surface with a nanoparticle catalyst. A method of laterally bridging the nanowire grows the nanowire from the activated vertical surface to connect to an opposite vertical surface on the substrate. A method of connecting electrodes of a semiconductor device grows the nanowire from an activated device electrode to an opposing device electrode. A method of bridging semiconductor nanowires grows nanowires between an electrode pair in opposing lateral directions. A method of self-assembling the nanowire bridges the nanowire between an activated electrode pair. A method of controlling nanowire growth forms a surface irregularity in the vertical surface. An electronic device includes a laterally grown nano-scale interconnection.
    Type: Grant
    Filed: December 17, 2003
    Date of Patent: April 24, 2007
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: M. Saif Islam, Theodore I. Kamins, Shashank Sharma
  • Patent number: 7177021
    Abstract: Integrated radiation source/amplifying structures for use in surface enhanced Raman spectroscopy (SERS) and hyper-SERS are disclosed. The structures include a radiation source integrated with a SERS-active structure that is provided within a resonant cavity. SERS and hyper-SERS systems employing the integrated radiation source/amplifying structures are disclosed. Methods of performing SERS and hyper-SERS are also disclosed.
    Type: Grant
    Filed: September 14, 2004
    Date of Patent: February 13, 2007
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Shih-Yuan Wang, M. Saif Islam, Zhiyong Li
  • Patent number: 7151599
    Abstract: Devices, systems, and methods for enhancing Raman spectroscopy and hyper-Raman are disclosed. A molecular analysis device for performing Raman spectroscopy comprises a substrate and a laser source disposed on the substrate. The laser source may be configured for emanating a laser radiation, which may irradiate an analyte disposed on a Raman enhancement structure. The Raman enhancement structure may be disposed in a waveguide. The molecular analysis device also includes a wavelength demultiplexer and radiation sensors disposed on the substrate and configured for receiving a Raman scattered radiation, which may be generated by the irradiation of the analyte and Raman enhancement structure.
    Type: Grant
    Filed: January 27, 2005
    Date of Patent: December 19, 2006
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: M. Saif Islam, Shih-Yuan Wang, Wei Wu, Zhiyong Li, R. Stanley Williams