Abstract: The present invention provides a micro light-emitting-diode display panel and a manufacturing method thereof. The micro light-emitting-diode display panel which presses and fixes the micro light-emitting-diodes into a resin adhesive layer by filling the resin adhesive layer in the pixel groove. Meanwhile, the electrode at the bottom of the micro light-emitting-diode is guided to the top of the micro light-emitting-diode by the connection electrode, making the two electrodes of the micro light-emitting-diode are at the top, to facilitate the connection between the electrodes of the micro light-emitting-diode and the electrode points.

Abstract: An OLED display device is disclosed, and the metal connection electrode is connected to the auxiliary electrode through a recessed hole; the recessed hole forms a first cavity and a second cavity communicating with each other, and the first cavity extends from an edge line of the second cavity away from the pixel electrode in the same direction; the pixel definition layer is above the array substrate, and reserved with grooves corresponding to the recessed holes and the pixel electrodes; an OLED semiconductor layer on the pixel definition layer covers on the pixel electrode and the metal connection electrode, and also extends into the first cavity to be connected with the auxiliary electrode; a cathode is on the OLED semiconductor layer, and extends into the first cavity to be connected with the auxiliary electrode, and is in a discontinuous connection state with the recessed hole as a breakpoint.

Abstract: The present invention provides a micro light emitting-diode display panel and a manufacturing method thereof. The first electrode contact and the second electrode contact are alternatively disposed on the base substrate of the micro light-emitting-diode display panel, and the first electrode contact and the second electrode contact are respectively connected with the bottom electrode and the connection electrode of the micro light-emitting-diode. The connection electrode is also connected with the top electrode of the micro light-emitting-diode, and the micro light-emitting-diodes can be immediately inspected after the micro-light-emitting-diode is transferred, to reduce the difficulty of detection and product repair, and to improve the product yield.

Abstract: A stretchable display panel, a manufacturing method of the stretchable display panel and a stretchable display apparatus are provided. The manufacturing method of the stretchable display panel includes: providing a first substrate; defining a plurality of pixel regions and a plurality of stretchable regions in the first substrate; each stretchable region being located between two adjacent pixel regions; forming a pixel device in each pixel region, and forming a conducting wire connecting two adjacent pixel regions in each stretchable region; wherein a length of the conducting wire is greater than a distance between two adjacent pixel regions. In this way, the stretchable display panel may achieve a great amount of deformation, and the display panel can be bent conveniently.

Abstract: The present invention provides an apparatus and a method for transferring micro light-emitting diodes. Said apparatus for transferring the micro light-emitting diodes comprises a main body, and a spraying module, a cooling module and a heating module disposed on said main body. The spraying module sprays metallic adhesive liquid onto the micro light-emitting diodes that wait to transfer, the cooling module cools the metallic adhesive liquid on the wait-to-transfer micro light-emitting diodes, thereby curing the metallic adhesive liquid to adhesively bond the main body with the wait-to-transfer micro light-emitting diodes together implementing the transfer of the micro light-emitting diodes, After transferred to reach the position, the cured metallic adhesive liquid is heated by the heating module, thereby melting the metallic adhesive liquid to separate the main body from the wait-to-transfer micro light-emitting diodes.

Abstract: A stretchable display panel, a manufacturing method of the stretchable display panel and a stretchable display apparatus are provided. The manufacturing method of the stretchable display panel includes: providing a first substrate; defining a plurality of pixel regions and a plurality of stretchable regions in the first substrate; each stretchable region being located between two adjacent pixel regions; forming a pixel device in each pixel region, and forming a conducting wire connecting two adjacent pixel regions in each stretchable region; wherein a length of the conducting wire is greater than a distance between two adjacent pixel regions. In this way, the stretchable display panel may achieve a great amount of deformation, and the display panel can be bent conveniently.

Abstract: A method of manufacturing a thin film transistor is provided, and includes: providing a substrate; depositing a buffer layer and patterning the buffer layer; sequentially depositing an insulation layer and a first metal layer, coating a photoresist on the first metal layer; metal etching the first metal layer; ashing the photoresist; metal etching the first metal layer of the lightly doped region; implanting ions to an active area; and removing the photoresist.

Abstract: The present invention provides a micro light emitting-diode display panel and a manufacturing method thereof. The first electrode contact and the second electrode contact are alternatively disposed on the base substrate of the micro light-emitting-diode display panel, and the first electrode contact and the second electrode contact are respectively connected with the bottom electrode and the connection electrode of the micro light-emitting-diode. The connection electrode is also connected the top electrode of the micro light-emitting-diode, and the micro light-emitting-diodes can be immediately inspected after the micro-light-emitting-diode is transferred, to reduce the difficulty of detection and product repair, and to improve the product yield.

Abstract: The present invention relates to a TFT substrate manufacturing method. The TFT substrate manufacturing method includes: Step 10: applying a first mask-based operation to form a TFT gate electrode pattern on a base plate; Step 20: applying a second mask-based operation to form an active layer pattern and a source/drain metal electrode pattern on the base plate; Step 30: depositing a passivation layer on the base plate, applying a third mask-based operation to define a pixel electrode pattern, conducting etching and photoresist haze operations, and then depositing a pixel electrode; and Step 40: conducting etching or direct photoresist stripping to form the pixel electrode pattern.

Abstract: The present invention provides a micro light-emitting-diode display panel and a manufacturing method thereof. The micro light-emitting-diode display panel which presses and fixes the micro light-emitting-diodes into a resin adhesive layer by filling the resin adhesive layer in the pixel groove. Meanwhile, the electrode at the bottom of the micro light-emitting-diode is guided to the top of the micro light-emitting-diode by the connection electrode, making the two electrodes of the micro light-emitting-diode are at the top, to facilitate the connection between the electrodes of the micro light-emitting-diode and the electrode points, which can reduce the difficulty of the electrode bonding of the micro light-emitting-diode, and improve the reliability of the electrode bonding of the micro light-emitting-diode.

Abstract: The present invention discloses a method of manufacturing array substrate, comprising: A) defining a heavily doped region and a lightly doped region of a source electrode of an N-channel area, and a heavily doped region and a lightly doped region of a drain electrode of the N-channel area by using a first photomask having a first pattern; B) defining a doped region of a source electrode of a P-channel area and a doped region of a drain electrode of the P-channel area by using a second photomask having a second pattern; C) defining a pixel region, a contact hole region by using a third photomask having a third pattern; and D) defining a metal electrode region by using a fourth photomask having a fourth pattern.

Abstract: A micro light emitting-diode display panel and a manufacturing method thereof are provided. The first electrode contact and the second electrode contact are alternatively disposed on the base substrate of the micro light-emitting-diode display panel, and the first electrode contact and the second electrode contact are respectively connected with the bottom electrode and the connection electrode of the micro light-emitting-diode. The connection electrode is also connected with the top electrode of the micro light-emitting-diode, and the micro light-emitting-diodes can be immediately inspected after the micro-light-emitting-diode is transferred, to reduce the difficulty of detection and product repair, and to improve the product yield.

Abstract: The present invention provides a micro light-emitting-diode display panel and a manufacturing method thereof. The micro light-emitting-diode display panel which presses and fixes the micro light-emitting-diodes into a resin adhesive layer by filling the resin adhesive layer in the pixel groove. Meanwhile, the electrode at the bottom of the micro light-emitting-diode is guided to the top of the micro light-emitting-diode by the connection electrode, making the two electrodes of the micro light-emitting-diode are at the top, to facilitate the connection between the electrodes of the micro light-emitting-diode and the electrode points, which can reduce the difficulty of the electrode bonding of the micro light-emitting-diode, and improve the reliability of the electrode bonding of the micro light-emitting-diode.

Abstract: A method of manufacturing a nano metal grating is provided. In the method, a patterned metal oxide film is formed on a surface of the metal layer through the formation of metal oxides in an oxygen ashing process, and the nano metal grating is manufactured by using the patterned metal oxide film as a mask. Thus, a drawback that the metal layer cannot be etched after the metal layer is oxidized is solved, and the metal oxide film is not only used as a mask to manufacture the nano metal grating, but the metal oxide film is also used as a protective layer of the nano metal grating.

Abstract: The present application discloses a method for manufacturing a thin film transistor, including: subsequently depositing a first passivation layer, an organic insulating layer, and a second passivation layer on a gate insulating layer of the substrate, an active layer, a source electrode and a drain electrode; applying a photoresist layer on the second passivation layer, and performing a pattern process to define a pixel electrode layer pattern, a common electrode layer pattern, and a cured layer pattern; defining the pixel electrode layer pattern, the common electrode layer pattern, and the cured layer pattern by the etching process on the second passivation layer, the organic insulating layer, the first passivation layer and partial of the gate insulating layer, ashing the photoresist layer; and forming a pixel electrode layer on the organic insulating layer, forming a common electrode layer on the organic insulating layer exposed by the second passivation layer.

Abstract: The present invention provides a micro light emitting-diode display panel and a manufacturing method thereof. The first electrode contact and the second electrode contact are alternatively disposed on the base substrate of the micro light-emitting-diode display panel, and the first electrode contact and the second electrode contact are respectively connected with the bottom electrode and the connection electrode of the micro light-emitting-diode. The connection electrode is also connected the top electrode of the micro light-emitting-diode, and the micro light-emitting-diodes can be immediately inspected after the micro-light-emitting-diode is transferred, to reduce the difficulty of detection and product repair, and to improve the product yield.

Abstract: The present invention provides a micro light-emitting-diode display panel and a manufacturing method thereof. The micro light-emitting-diode display panel which presses and fixes the micro light-emitting-diodes into a resin adhesive layer by filling the resin adhesive layer in the pixel groove. Meanwhile, the electrode at the bottom of the micro light-emitting-diode is guided to the top of the micro light-emitting-diode by the connection electrode, making the two electrodes of the micro light-emitting-diode are at the top, to facilitate the connection between the electrodes of the micro light-emitting-diode and the electrode points, which can reduce the difficulty of the electrode bonding of the micro light-emitting-diode, and improve the reliability of the electrode bonding of the micro light-emitting-diode.

Abstract: The present invention provides an apparatus and a method for transferring micro light-emitting diodes. Said apparatus for transferring the micro light-emitting diodes comprises a main body, and a spraying module, a cooling module and a heating module disposed on said main body. The spraying module sprays metallic adhesive liquid onto the micro light-emitting diodes that wait to transfer, the cooling module cools the metallic adhesive liquid on the wait-to-transfer micro light-emitting diodes, thereby curing the metallic adhesive liquid to adhesively bond the main body with the wait-to-transfer micro light-emitting diodes together implementing the transfer of the micro light-emitting diodes, After transferred to reach the position, the cured metallic adhesive liquid is heated by the heating module, thereby melting the metallic adhesive liquid to separate the main body from the wait-to-transfer micro light-emitting diodes.

Abstract: The present invention provides a TFT (Thin Film Transistor) substrate manufacture method, which includes forming a TFT gate electrode on a substrate, sequentially forming a first insulation layer, an active layer, a source electrode, and a drain electrode, and then forming a second insulation layer and coating a photoresist thereon, defining a pixel electrode pattern, forming a drain VIA hole on the second insulation layer, depositing a pixel electrode layer after preparing suede on the photoresist, and permeating the suede with a stripping liquid to remove the photoresist and the pixel electrode layer on the photoresist so as to form a pixel electrode connecting to the drain electrode via the drain VIA hole.

Abstract: The present invention provides a TFT (Thin Film Transistor) substrate manufacture method, which includes forming a TFT gate electrode on a substrate, sequentially forming a first insulation layer, an active layer, a source electrode, and a drain electrode, and then forming a second insulation layer and coating a photoresist thereon, defining a pixel electrode pattern, forming a drain VIA hole on the second insulation layer, depositing a pixel electrode layer after preparing suede on the photoresist, and permeating the suede with a stripping liquid to remove the photoresist and the pixel electrode layer on the photoresist so as to form a pixel electrode connecting to the drain electrode via the drain VIA hole.