Patents by Inventor Madhukar B. Vora
Madhukar B. Vora has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10050076Abstract: Various embodiments of a 3D high resolution X-ray sensor are described. In one aspect, an indirect X-ray sensor includes a silicon wafer that includes an array of photodiodes thereon with each of the photodiodes having a contact on a front side of the silicon wafer and self-aligned with a respective grid hole of an array of grid holes that are on a back side of the silicon wafer. Each of the grid holes is filled with a scintillator configured to convert beams of X-ray into light. The indirect X-ray sensor also includes one or more silicon dies with an array of photo-sensing circuits each of which including a contact at a top surface of the one or more silicon dies. Contact on each of the photodiodes is aligned and bonded to contact of a respective photo-sensing circuit of the array of photo-sensing circuits of the one or more silicon dies.Type: GrantFiled: October 7, 2014Date of Patent: August 14, 2018Assignee: TERAPEDE SYSTEMS INC.Inventor: Madhukar B. Vora
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Patent number: 9754992Abstract: Various embodiments of a structure implemented in an X-ray imaging system are described. In one aspect, a structure implemented in an X-ray imaging system includes a silicon wafer including a first side and a second side opposite the first side. The silicon wafer also includes an array of photodiodes on the first side of the silicon wafer with the photodiodes electrically isolated from each other as well as an array of grid holes on the second side of the silicon wafer. Each grid hole of the array of grid holes is aligned with a respective photodiode of the array of photodiodes. The structure also includes a layer of scintillating material disposed over the array of grid holes on the second side of the silicon wafer. The structure further includes a layer of reflective material disposed on the layer of scintillating material.Type: GrantFiled: July 19, 2016Date of Patent: September 5, 2017Assignee: TERAPEDE SYSTEMS INC.Inventors: Madhukar B. Vora, Brian Rodricks
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Patent number: 9559139Abstract: Various embodiments of a structure implemented in an X-ray imaging system are described. In one aspect, a structure implemented in an X-ray imaging system includes a silicon wafer including a first side and a second side opposite the first side. The silicon wafer also includes an array of photodiodes on the first side of the silicon wafer with the photodiodes electrically isolated from each other as well as an array of grid holes on the second side of the silicon wafer. Each grid hole of the array of grid holes is aligned with a respective photodiode of the array of photodiodes. The structure also includes a layer of scintillating material disposed over the array of grid holes on the second side of the silicon wafer. The structure further includes a layer of reflective material disposed on the layer of scintillating material.Type: GrantFiled: September 24, 2015Date of Patent: January 31, 2017Assignee: TERAPEDE SYSTEMS INC.Inventors: Madhukar B. Vora, Brian Rodricks
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Publication number: 20160329372Abstract: Various embodiments of a structure implemented in an X-ray imaging system are described. In one aspect, a structure implemented in an X-ray imaging system includes a silicon wafer including a first side and a second side opposite the first side. The silicon wafer also includes an array of photodiodes on the first side of the silicon wafer with the photodiodes electrically isolated from each other as well as an array of grid holes on the second side of the silicon wafer. Each grid hole of the array of grid holes is aligned with a respective photodiode of the array of photodiodes. The structure also includes a layer of scintillating material disposed over the array of grid holes on the second side of the silicon wafer. The structure further includes a layer of reflective material disposed on the layer of scintillating material.Type: ApplicationFiled: July 19, 2016Publication date: November 10, 2016Inventors: Madhukar B. Vora, Brian Rodricks
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Patent number: 9476991Abstract: Various embodiments of a 3D high resolution X-ray sensor are described. In one aspect, an indirect X-ray sensor includes a silicon wafer that includes an array of photodiodes thereon with each of the photodiodes having a contact on a front side of the silicon wafer and self-aligned with a respective grid hole of an array of grid holes that are on a back side of the silicon wafer. Each of the grid holes is filled with a scintillator configured to convert beams of X-ray into light. The indirect X-ray sensor also includes one or more silicon dies with an array of photo-sensing circuits each of which including a contact at a top surface of the one or more silicon dies. Contact on each of the photodiodes is aligned and bonded to contact of a respective photo-sensing circuit of the array of photo-sensing circuits of the one or more silicon dies.Type: GrantFiled: October 7, 2014Date of Patent: October 25, 2016Assignee: TERAPEDE SYSTEMS INC.Inventor: Madhukar B. Vora
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Patent number: 9472529Abstract: An electronic circuit and method may include a first chip including first electronics and a first connector including multiple self-alignment features and conductive pads. A second chip may include second electronics and a second connector including multiple self-alignment features and conductive pads. The first chip and second chip may be indirectly horizontally aligned with one another and in electrical communication with one another via the first and second connectors.Type: GrantFiled: June 11, 2015Date of Patent: October 18, 2016Assignee: TERAPEDE SYSTEMS INC.Inventor: Madhukar B. Vora
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Patent number: 9466638Abstract: Various embodiments of a 3D high resolution X-ray sensor are described. In one aspect, an indirect X-ray sensor includes a silicon wafer that includes an array of photodiodes thereon with each of the photodiodes having a contact on a front side of the silicon wafer and self-aligned with a respective grid hole of an array of grid holes that are on a back side of the silicon wafer. Each of the grid holes is filled with a scintillator configured to convert beams of X-ray into light. The indirect X-ray sensor also includes one or more silicon dies with an array of photo-sensing circuits each of which including a contact at a top surface of the one or more silicon dies. Contact on each of the photodiodes is aligned and bonded to contact of a respective photo-sensing circuit of the array of photo-sensing circuits of the one or more silicon dies.Type: GrantFiled: October 7, 2014Date of Patent: October 11, 2016Assignee: TERAPEDE SYSTEMS INC.Inventor: Madhukar B. Vora
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Patent number: 9419046Abstract: Various embodiments of a structure implemented in an X-ray imaging system are described. In one aspect, a structure implemented in an X-ray imaging system includes a silicon wafer including a first side and a second side opposite the first side. The silicon wafer also includes an array of photodiodes on the first side of the silicon wafer with the photodiodes electrically isolated from each other as well as an array of grid holes on the second side of the silicon wafer. Each grid hole of the array of grid holes is aligned with a respective photodiode of the array of photodiodes. The structure also includes a layer of scintillating material disposed over the array of grid holes on the second side of the silicon wafer. The structure further includes a layer of reflective material disposed on the layer of scintillating material.Type: GrantFiled: January 21, 2015Date of Patent: August 16, 2016Assignee: TERAPEDE SYSTEMS INC.Inventors: Madhukar B. Vora, Brian Rodricks
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Publication number: 20160211305Abstract: Various embodiments of a structure implemented in an X-ray imaging system are described. In one aspect, a structure implemented in an X-ray imaging system includes a silicon wafer including a first side and a second side opposite the first side. The silicon wafer also includes an array of photodiodes on the first side of the silicon wafer with the photodiodes electrically isolated from each other as well as an array of grid holes on the second side of the silicon wafer. Each grid hole of the array of grid holes is aligned with a respective photodiode of the array of photodiodes. The structure also includes a layer of scintillating material disposed over the array of grid holes on the second side of the silicon wafer. The structure further includes a layer of reflective material disposed on the layer of scintillating material.Type: ApplicationFiled: January 21, 2015Publication date: July 21, 2016Inventors: Madhukar B. Vora, Brian Rodricks
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Publication number: 20160181307Abstract: Various embodiments of a structure implemented in an X-ray imaging system are described. In one aspect, a structure implemented in an X-ray imaging system includes a silicon wafer including a first side and a second side opposite the first side. The silicon wafer also includes an array of photodiodes on the first side of the silicon wafer with the photodiodes electrically isolated from each other as well as an array of grid holes on the second side of the silicon wafer. Each grid hole of the array of grid holes is aligned with a respective photodiode of the array of photodiodes. The structure also includes a layer of scintillating material disposed over the array of grid holes on the second side of the silicon wafer. The structure further includes a layer of reflective material disposed on the layer of scintillating material.Type: ApplicationFiled: September 24, 2015Publication date: June 23, 2016Inventors: Madhukar B. Vora, Brian Rodricks
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Publication number: 20160097864Abstract: Various embodiments of a 3D high resolution X-ray sensor are described. In one aspect, an indirect X-ray sensor includes a silicon wafer that includes an array of photodiodes thereon with each of the photodiodes having a contact on a front side of the silicon wafer and self-aligned with a respective grid hole of an array of grid holes that are on a back side of the silicon wafer. Each of the grid holes is filled with a scintillator configured to convert beams of X-ray into light. The indirect X-ray sensor also includes one or more silicon dies with an array of photo-sensing circuits each of which including a contact at a top surface of the one or more silicon dies. Contact on each of the photodiodes is aligned and bonded to contact of a respective photo-sensing circuit of the array of photo-sensing circuits of the one or more silicon dies.Type: ApplicationFiled: October 7, 2014Publication date: April 7, 2016Inventor: Madhukar B. Vora
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Publication number: 20160099277Abstract: Various embodiments of a 3D high resolution X-ray sensor are described. In one aspect, an indirect X-ray sensor includes a silicon wafer that includes an array of photodiodes thereon with each of the photodiodes having a contact on a front side of the silicon wafer and self-aligned with a respective grid hole of an array of grid holes that are on a back side of the silicon wafer. Each of the grid holes is filled with a scintillator configured to convert beams of X-ray into light. The indirect X-ray sensor also includes one or more silicon dies with an array of photo-sensing circuits each of which including a contact at a top surface of the one or more silicon dies. Contact on each of the photodiodes is aligned and bonded to contact of a respective photo-sensing circuit of the array of photo-sensing circuits of the one or more silicon dies.Type: ApplicationFiled: October 7, 2014Publication date: April 7, 2016Inventor: Madhukar B. Vora
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Publication number: 20160099274Abstract: Various embodiments of a 3D high resolution X-ray sensor are described. In one aspect, an indirect X-ray sensor includes a silicon wafer that includes an array of photodiodes thereon with each of the photodiodes having a contact on a front side of the silicon wafer and self-aligned with a respective grid hole of an array of grid holes that are on a back side of the silicon wafer. Each of the grid holes is filled with a scintillator configured to convert beams of X-ray into light. The indirect X-ray sensor also includes one or more silicon dies with an array of photo-sensing circuits each of which including a contact at a top surface of the one or more silicon dies. Contact on each of the photodiodes is aligned and bonded to contact of a respective photo-sensing circuit of the array of photo-sensing circuits of the one or more silicon dies.Type: ApplicationFiled: October 7, 2014Publication date: April 7, 2016Inventor: Madhukar B. Vora
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Publication number: 20160099281Abstract: Various embodiments of a 3D high resolution X-ray sensor are described. In one aspect, an indirect X-ray sensor includes a silicon wafer that includes an array of photodiodes thereon with each of the photodiodes having a contact on a front side of the silicon wafer and self-aligned with a respective grid hole of an array of grid holes that are on a back side of the silicon wafer. Each of the grid holes is filled with a scintillator configured to convert beams of X-ray into light. The indirect X-ray sensor also includes one or more silicon dies with an array of photo-sensing circuits each of which including a contact at a top surface of the one or more silicon dies. Contact on each of the photodiodes is aligned and bonded to contact of a respective photo-sensing circuit of the array of photo-sensing circuits of the one or more silicon dies.Type: ApplicationFiled: October 7, 2014Publication date: April 7, 2016Inventor: Madhukar B. Vora
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Publication number: 20160099282Abstract: Various embodiments of a 3D high resolution X-ray sensor are described. In one aspect, an indirect X-ray sensor includes a silicon wafer that includes an array of photodiodes thereon with each of the photodiodes having a contact on a front side of the silicon wafer and self-aligned with a respective grid hole of an array of grid holes that are on a back side of the silicon wafer. Each of the grid holes is filled with a scintillator configured to convert beams of X-ray into light. The indirect X-ray sensor also includes one or more silicon dies with an array of photo-sensing circuits each of which including a contact at a top surface of the one or more silicon dies. Contact on each of the photodiodes is aligned and bonded to contact of a respective photo-sensing circuit of the array of photo-sensing circuits of the one or more silicon dies.Type: ApplicationFiled: October 7, 2014Publication date: April 7, 2016Inventor: Madhukar B. Vora
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Patent number: 9219093Abstract: Various embodiments of a 3D high resolution X-ray sensor are described. In one aspect, an indirect X-ray sensor includes a silicon wafer that includes an array of photodiodes thereon with each of the photodiodes having a contact on a front side of the silicon wafer and self-aligned with a respective grid hole of an array of grid holes that are on a back side of the silicon wafer. Each of the grid holes is filled with a scintillator configured to convert beams of X-ray into light. The indirect X-ray sensor also includes one or more silicon dies with an array of photo-sensing circuits each of which including a contact at a top surface of the one or more silicon dies. Contact on each of the photodiodes is aligned and bonded to contact of a respective photo-sensing circuit of the array of photo-sensing circuits of the one or more silicon dies.Type: GrantFiled: October 7, 2014Date of Patent: December 22, 2015Inventor: Madhukar B. Vora
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Publication number: 20150348938Abstract: An electronic circuit and method may include a first chip including first electronics and a first connector including multiple self-alignment features and conductive pads. A second chip may include second electronics and a second connector including multiple self-alignment features and conductive pads. The first chip and second chip may be indirectly horizontally aligned with one another and in electrical communication with one another via the first and second connectors.Type: ApplicationFiled: June 11, 2015Publication date: December 3, 2015Inventor: Madhukar B. Vora
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Patent number: 9082869Abstract: An electronic circuit and method may include a first chip including first electronics and a first connector including multiple self-alignment features and conductive pads. A second chip may include second electronics and a second connector including multiple self-alignment features and conductive pads. The first chip and second chip may be indirectly horizontally aligned with one another and in electrical communication with one another via the first and second connectors.Type: GrantFiled: September 14, 2011Date of Patent: July 14, 2015Assignee: TERAPEDE SYSTEMS, INC.Inventor: Madhukar B. Vora
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Publication number: 20150162293Abstract: Self-alignment structures, such as micro-balls and V-grooves, may be formed on chips made by different processes. The self-alignment structures may be aligned to mask layers within an accuracy of one-half the smallest feature size inside a chip. For example, the alignment structures can align an array of pads having a pitch of 0.6 microns, compared to a pitch of 100 microns available with today's Ball Grid Array (BGA) technology. As a result, circuits in the mated chips can communicate via the pads with the same speed or clock frequency as if in a single chip. For example, clock rates between interconnected chips can be increased from 100 MHz to 4 GHz due to low capacitance of the interconnected pads. Because high-density arrays of pads can interconnect chips, chips can be made smaller, thereby reducing cost of chips by order(s) of magnitude.Type: ApplicationFiled: January 9, 2015Publication date: June 11, 2015Inventor: Madhukar B. Vora
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Patent number: 8957511Abstract: Self-alignment structures, such as micro-balls and V-grooves, may be formed on chips made by different processes. The self-alignment structures may be aligned to mask layers within an accuracy of one-half the smallest feature size inside a chip. For example, the alignment structures can align an array of pads having a pitch of 0.6 microns, compared to a pitch of 100 microns available with today's Ball Grid Array (BGA) technology. As a result, circuits in the mated chips can communicate via the pads with the same speed or clock frequency as if in a single chip. For example, clock rates between interconnected chips can be increased from 100 MHz to 4 GHz due to low capacitance of the interconnected pads. Because high-density arrays of pads can interconnect chips, chips can be made smaller, thereby reducing cost of chips by order(s) of magnitude.Type: GrantFiled: August 21, 2006Date of Patent: February 17, 2015Inventor: Madhukar B. Vora