Patents by Inventor Mahmud Assar
Mahmud Assar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8724413Abstract: A multi-state current-switching magnetic memory element includes a stack of magnetic tunneling junction (MTJ) separated by a non-magnetic layer for storing more than one bit of information, wherein different levels of current applied to the memory element cause switching to different states.Type: GrantFiled: September 16, 2011Date of Patent: May 13, 2014Assignee: Avalanche Technology, Inc.Inventors: Rajiv Yadav Ranjan, Mahmud Assar, Parviz Keshtbod
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Patent number: 8711613Abstract: A flash-RAM memory includes non-volatile random access memory (RAM) formed on a monolithic die and non-volatile page-mode memory formed on top of the non-volatile RAM, the non-volatile page-mode memory and the non-volatile RAM reside on the monolithic die. The non-volatile RAM is formed of stacks of magnetic memory cells arranged in three-dimensional form for higher density and lower costs.Type: GrantFiled: May 10, 2013Date of Patent: April 29, 2014Assignee: Avalanche Technology, Inc.Inventors: Rajiv Yadav Ranjan, Parviz Keshtbod, Mahmud Assar
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Publication number: 20130282963Abstract: A flash-RAM memory includes non-volatile random access memory (RAM) formed on a monolithic die and non-volatile page-mode memory formed on top of the non-volatile RAM, the non-volatile page-mode memory and the non-volatile RAM reside on the monolithic die. The non-volatile RAM is formed of stacks of magnetic memory cells arranged in three-dimensional form for higher density and lower costs.Type: ApplicationFiled: May 10, 2013Publication date: October 24, 2013Inventors: Rajiv Yadav Ranjan, Parviz Keshtbod, Mahmud Assar
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Patent number: 8477530Abstract: A non-uniform switching based non-volatile magnetic memory element includes a fixed layer, a barrier layer formed on top of the fixed layer, a first free layer formed on top of the barrier layer, a non-uniform switching layer (NSL) formed on top of the first free layer, and a second free layer formed on top of the non-uniform switching layer. Switching current is applied, in a direction that is substantially perpendicular to the fixed layer, barrier layer, first free layer, non-uniform switching layer and the second free layer causing switching between states of the first free layer, second free layer and non-uniform switching layer with substantially reduced switching current.Type: GrantFiled: November 28, 2011Date of Patent: July 2, 2013Assignee: Avalanche Technology, Inc.Inventors: Rajiv Yadav Ranjan, Petro Estakhri, Mahmud Assar, Parviz Keshtbod
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Patent number: 8440471Abstract: A method of flash-RAM memory includes non-volatile random access memory (RAM) formed on a monolithic die and non-volatile page-mode memory formed on top of the non-volatile RAM, the non-volatile page-mode memory and the non-volatile RAM reside on the monolithic die. The non-volatile RAM is formed of stacks of magnetic memory cells arranged in three-dimensional form for higher density and lower costs.Type: GrantFiled: January 6, 2012Date of Patent: May 14, 2013Assignee: Avalanche Technology, Inc.Inventors: Rajiv Yadav Ranjan, Parviz Keshtbod, Mahmud Assar
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Patent number: 8391058Abstract: A flash-RAM memory includes non-volatile random access memory (RAM) formed on a monolithic die and non-volatile page-mode memory formed on top of the non-volatile RAM, the non-volatile page-mode memory and the non-volatile RAM reside on the monolithic die. The non-volatile RAM is formed of stacks of magnetic memory cells arranged in three-dimensional form for higher density and lower costs.Type: GrantFiled: January 6, 2012Date of Patent: March 5, 2013Assignee: Avalanche Technology, Inc.Inventors: Rajiv Yadav Ranjan, Parviz Keshtbod, Mahmud Assar
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Patent number: 8391054Abstract: A multi-state current-switching magnetic memory element includes a stack of magnetic tunneling junction (MTJ) separated by a non-magnetic layer for storing more than one bit of information, wherein different levels of current applied to the memory element cause switching to different states.Type: GrantFiled: September 16, 2011Date of Patent: March 5, 2013Assignee: Avalanche Technology, Inc.Inventors: Rajiv Yadav Ranjan, Mahmud Assar, Parviz Keshtbod
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Patent number: 8389301Abstract: A non-uniform switching based non-volatile magnetic memory element includes a fixed layer, a barrier layer formed on top of the fixed layer, a first free layer formed on top of the barrier layer, a non-uniform switching layer (NSL) formed on top of the first free layer, and a second free layer formed on top of the non-uniform switching layer. Switching current is applied, in a direction that is substantially perpendicular to the fixed layer, barrier layer, first free layer, non-uniform switching layer and the second free layer causing switching between states of the first free layer, second free layer and non-uniform switching layer with substantially reduced switching current.Type: GrantFiled: November 28, 2011Date of Patent: March 5, 2013Assignee: Avalanche Technology, Inc.Inventors: Rajiv Yadav Ranjan, Petro Estakhri, Mahmud Assar, Parviz Keshtbod
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Patent number: 8291128Abstract: Systems having a host computer system, a memory device coupled to the host computer system, and identification circuitry. The identification circuitry is configured to identify an operating mode of the host computer system from comparing applied signals to sensed signals.Type: GrantFiled: December 5, 2011Date of Patent: October 16, 2012Assignee: Micron Technology, Inc.Inventors: Petro Estakhri, Mahmud Assar
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Publication number: 20120170361Abstract: A flash-RAM memory includes non-volatile random access memory (RAM) formed on a monolithic die and non-volatile page-mode memory formed on top of the non-volatile RAM, the non-volatile page-mode memory and the non-volatile RAM reside on the monolithic die. The non-volatile RAM is formed of stacks of magnetic memory cells arranged in three-dimensional form for higher density and lower costs.Type: ApplicationFiled: January 6, 2012Publication date: July 5, 2012Applicant: AVALANCHE TECHNOLOGY, INC.Inventors: Rajiv Yadav Ranjan, Parviz Keshtbod, Mahmud ASSAR
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Publication number: 20120107964Abstract: A method of flash-RAM memory includes non-volatile random access memory (RAM) formed on a monolithic die and non-volatile page-mode memory formed on top of the non-volatile RAM, the non-volatile page-mode memory and the non-volatile RAM reside on the monolithic die. The non-volatile RAM is formed of stacks of magnetic memory cells arranged in three-dimensional form for higher density and lower costs.Type: ApplicationFiled: January 6, 2012Publication date: May 3, 2012Applicant: Avalanche Technology, Inc.Inventors: Rajiv Yadav RANJAN, Parviz KESHTBOD, Mahmud ASSAR
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Publication number: 20120079137Abstract: Systems having a host computer system, a memory device coupled to the host computer system, and identification circuitry. The identification circuitry is configured to identify an operating mode of the host computer system from comparing applied signals to sensed signals.Type: ApplicationFiled: December 5, 2011Publication date: March 29, 2012Inventors: Petro Estakhri, Mahmud Assar
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Publication number: 20120069643Abstract: A non-uniform switching based non-volatile magnetic memory element includes a fixed layer, a barrier layer formed on top of the fixed layer, a first free layer formed on top of the barrier layer, a non-uniform switching layer (NSL) formed on top of the first free layer, and a second free layer formed on top of the non-uniform switching layer. Switching current is applied, in a direction that is substantially perpendicular to the fixed layer, barrier layer, first free layer, non-uniform switching layer and the second free layer causing switching between states of the first free layer, second free layer and non-uniform switching layer with substantially reduced switching current.Type: ApplicationFiled: November 28, 2011Publication date: March 22, 2012Applicant: AVALANCHE TECHNOLOGY, INC.Inventors: Rajiv Yadav Ranjan, Petro Estakhri, Mahmud Assar, Parviz Keshtbod
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Publication number: 20120069649Abstract: A non-uniform switching based non-volatile magnetic memory element includes a fixed layer, a barrier layer formed on top of the fixed layer, a first free layer formed on top of the barrier layer, a non-uniform switching layer (NSL) formed on top of the first free layer, and a second free layer formed on top of the non-uniform switching layer. Switching current is applied, in a direction that is substantially perpendicular to the fixed layer, barrier layer, first free layer, non-uniform switching layer and the second free layer causing switching between states of the first free layer, second free layer and non-uniform switching layer with substantially reduced switching current.Type: ApplicationFiled: November 28, 2011Publication date: March 22, 2012Applicant: AVALANCHE TECHNOLOGY, INC.Inventors: Rajiv Yadav Ranjan, Petro Estakhri, Mahmud Assar, Parviz Keshtbod
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Publication number: 20120068236Abstract: A non-uniform switching based non-volatile magnetic memory element includes a fixed layer, a barrier layer formed on top of the fixed layer, a first free layer formed on top of the barrier layer, a non-uniform switching layer (NSL) formed on top of the first free layer, and a second free layer formed on top of the non-uniform switching layer. Switching current is applied, in a direction that is substantially perpendicular to the fixed layer, barrier layer, first free layer, non-uniform switching layer and the second free layer causing switching between states of the first free layer, second free layer and non-uniform switching layer with substantially reduced switching current.Type: ApplicationFiled: November 28, 2011Publication date: March 22, 2012Applicant: AVALANCHE TECHNOLOGY, INC.Inventors: Rajiv Yadav Ranjan, Petro Estakhri, Mahmud Assar, Parviz Keshtbod
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Patent number: 8120949Abstract: A flash-RAM memory includes non-volatile random access memory (RAM) formed on a monolithic die and non-volatile page-mode memory formed on top of the non-volatile RAM, the non-volatile page-mode memory and the non-volatile RAM reside on the monolithic die.Type: GrantFiled: July 30, 2008Date of Patent: February 21, 2012Assignee: Avalanche Technology, Inc.Inventors: Rajiv Yadav Ranjan, Parviz Keshtbod, Mahmud Assar
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Publication number: 20120003757Abstract: A multi-state current-switching magnetic memory element includes a stack of magnetic tunneling junction (MTJ) separated by a non-magnetic layer for storing more than one bit of information, wherein different levels of current applied to the memory element cause switching to different states.Type: ApplicationFiled: September 16, 2011Publication date: January 5, 2012Applicant: AVALANCHE TECHNOLOGY, INC.Inventors: Rajiv Yadav Ranjan, Mahmud Assar, Parviz Keshtbod
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Publication number: 20120002463Abstract: A multi-state current-switching magnetic memory element includes a stack of magnetic tunneling junction (MTJ) separated by a non-magnetic layer for storing more than one bit of information, wherein different levels of current applied to the memory element cause switching to different states.Type: ApplicationFiled: September 16, 2011Publication date: January 5, 2012Applicant: AVALANCHE TECHNOLOGY, INC.Inventors: Rajiv Yadav Ranjan, Mahmud Assar, Parviz Keshtbod
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Patent number: 8084835Abstract: A non-uniform switching based non-volatile magnetic memory element includes a fixed layer, a barrier layer formed on top of the fixed layer, a first free layer formed on top of the barrier layer, a non-uniform switching layer (NSL) formed on top of the first free layer, and a second free layer formed on top of the non-uniform switching layer. Switching current is applied, in a direction that is substantially perpendicular to the fixed layer, barrier layer, first free layer, non-uniform switching layer and the second free layer causing switching between states of the first free layer, second free layer and non-uniform switching layer with substantially reduced switching current.Type: GrantFiled: February 12, 2007Date of Patent: December 27, 2011Assignee: Avalanche Technology, Inc.Inventors: Rajiv Yadav Ranjan, Petro Estakhri, Mahmud Assar, Parviz Keshtbod
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Patent number: 8073986Abstract: Memory devices having a memory module, an interface, identification circuitry and a controller coupled to the memory module and the identification circuitry. The identification circuitry is configured to identify a selected operating mode from a plurality of signals sensed at the interface in response to a plurality of signals previously applied to the interface by the identification circuitry. The controller is operable to configure the memory device to the selected operating mode responsive to the identification circuitry.Type: GrantFiled: May 18, 2010Date of Patent: December 6, 2011Assignee: Micron Technology, Inc.Inventors: Petro Estakhri, Mahmud Assar