Abstract: A semiconductor device manufacturing technique measures simultaneously a plurality of points on a sample to realize a high-speed three-dimensional shape measurement and reflects it to setting of a processing condition in a semiconductor device process, thereby making it possible to realize stable device manufacture with high precision. A three-dimensional shape measuring apparatus loaded on a processing apparatus such as an etcher, a coater-developer, a baking machine, or a lithography machine measures a plurality of points (500) on a sample (300) at high speed by arranging a plurality of measurement heads (100) for measuring a three-dimensional shape of the sample and by combining it with movement of an loader/stage (200) loading the sample (300). By using this measurement result, feeding back for correcting a processing condition with respect to the subsequent sample (300) and feeding forward for correcting a processing condition in the next step are realized.

Abstract: In a method of measuring a three dimensional shape of an arbitrary fine pattern on a semiconductor device, an optical measurement system carries out a measurement to obtain cross-section information, and an electron microscope obtains an electron beam image of the arbitrary fine pattern. Plane information and cross-section information obtained from the electron beam image of the arbitrary fine pattern are combined to measure the three dimensional shape of the arbitrary fine pattern.

Abstract: The present invention relates to a method and its system for calibrating measured data between different measuring tools. A method of calibrating measured data between different measuring tools includes the steps of: measuring the CD average dimension and roughness of an object to be measured using a CD-SEM tool; calculating the number of the cross section measurement points required for calibration by statistically processing the roughness; measuring the cross section of the object to be measured using the cross section measuring tool to satisfy the number of the cross section measurement points, thereby calculating the CD average dimension of the cross section measurement height specified in the obtained cross section measurement result; and calculating a calibration correction value being a difference between the CD average dimension of the object and the CD average dimension of the cross section measurement height of the object.

Abstract: A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined changed state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.

Abstract: A method of measuring pattern dimensions includes evaluating a relationship between cross-sectional shapes of a pattern and measurement errors of a pattern in a specified image processing technique, and conducting an actual measurement in which dimension measurement of an evaluation objective pattern from image signals of a microscope is carried out, and revising errors of the dimension measurement of the evaluation objective pattern based on the relationship between the cross-sectional shapes of a pattern and the measurement errors of a pattern previously evaluated.

Abstract: A method and apparatus of inspecting a sample, in which the sample is inspected under a plurality of inspection conditions, and inspection data obtained by inspecting the sample under each of the plurality of inspection conditions and position information on the sample of the inspection date in correspondence with the respective inspection conditions, are stored. The inspection data for each of the plurality of inspection conditions is against each other by the use of the position information on the sample to determine a position to be inspected in detail, and an image of the sample at a position to be inspected in detail is obtained. The obtained image is classified, the inspection condition of the sample by the use of information of classification of the image is determined.

Abstract: A pattern inspection apparatus including: an image detecting part for detecting a digital image of an object substrate; a display having a screen on which the digital image of the object substrate and/or a distribution of defect candidates in a map form are displayable; an input device for inputting information of a non-inspection region to be masked on the object substrate by defining a region on the screen on which said distribution of defect candidates is displayed in a map form; a memory part for storing coordinate data, pattern data or feature quantity data of the non-inspection region to be masked on the object substrate inputted on the screen by the input device; and a defect judging part in which the digital image detected by the image detecting part is examined in a state that a region matching with a condition stored in the memory part is masked and a defect is detected in a region other than said masked region.

Abstract: A method and device for observing a specimen, in which a convergent electron beam is irradiated and scanned from a desired direction, on a surface of a calibration substrate on which a pattern with a known shape is formed, and a beam SEM image of the pattern formed on the calibration substrate is obtained. An actual direction of the electron beam irradiated on the surface of the calibration substrate is calculated by use of the information about an apparent geometric deformation of the known shape on the SEM image, and the actual direction of the electron beam to the desired is adjusted direction by using information of the calculated direction.

Abstract: A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.

Abstract: A method and apparatus of inspecting a sample, in which the sample is inspected under a plurality of inspection conditions, and inspection data obtained by inspecting the sample under each of the plurality of inspection conditions and position information on the sample of the inspection date in correspondence with the respective inspection conditions, are stored. The inspection data for each of the plurality of inspection conditions is against each other by the use of the position information on the sample to determine a position to be inspected in detail, and an image of the sample at a position to be inspected in detail is obtained. The obtained image is classified, the inspection condition of the sample by the use of information of classification of the image is determined.

Abstract: It is difficult for a material having low resistance to electron beam irradiation to obtain an electron microscopic image having a high S/N ratio. A conventional image smoothing process can improve stability of measurement, but this process has a problem of measurement errors for absolute values, reduction of sensitivity, deterioration of quality of cubic shape information and the like. In the present invention, by performing an image averaging process without deteriorating cubic shape information of a signal waveform in consideration of dimension deviation of a measurement target pattern, measurement stability is compatible with improvement of precision and sensitivity. Accordingly, it is possible to realize measurement of pattern dimensions and shapes with high precision and control of a highly sensitive semiconductor manufacturing process using the measurement.

Abstract: A charged particle beam adjustment apparatus for tilting an electron beam by a tilt deflector is disclosed. The tilt angle adjustment of the electron beam and the distortion adjustment for correcting the image distortion generated when the electron beam is tilted are conducted on a specified. sample such as a pyramidal sample. The images before and after the tilting are acquired and processed to determine the tilt angle value and the distortion amount. The tilt angle adjustment and the adjustment for correction of the distortion are automated in accordance with a predetermined processing flow.

Abstract: A method and device for observing a specimen in which an electron beam is irradiated and scanned from an oblique direction, onto a surface of a calibration substrate on which a pattern with a known shape is formed, and an SEM image of the surface of the calibration substrate is obtained. An angle in an oblique direction of the electron beam irradiated is obtained and is adjusted to a desired angle. The electron beam is irradiated from the adjusted desired angle in the oblique direction, onto a specimen substrate on which a pattern is formed, and an SEM image of the specimen substrate is obtained. The SEM image of the specimen substrate is processed by use of the information of the desired angle, and a 3D image of the pattern on the specimen substrate or a shape of a cross section of the pattern is obtained.

Abstract: A method and apparatus for assessing a height of a specimen includes an electron beam unit having an electron beam source, lenses, a table for setting a specimen and controllable in a height direction, and a detector, and a height detection system for detecting height of the specimen set on the table while the specimen is irradiated by an electron beam. The height detection system further includes an illumination system, a collection system, first and second detectors, a device configured to receive output signals from the first and second detectors while the specimen is irradiated by the electron beam and to generate a comparison signal from the output signals, wherein the comparison signal is responsive to the height of the specimen.

Abstract: In the case of monitoring a resolution of a scanning electron microscope, it is required to prepare a sample and to use a measuring algorithm so as to reduce the pattern dependency of an index value of resolution to be measured in order to measure a variation in the size of an electron beam with a high degree of accuracy. According to the present invention, there is used a sample having a sectional shape which is appropriate for monitoring the resolution, that is, the sample has a pattern with such a sectional shape that a side wall of the pattern is inclined so as to prevent an electron beam irradiated on the sample from impinging upon the side wall of the pattern. With this configuration, it is possible carry out such resolution monitor that does not depend upon a sectional shape of a pattern.

Abstract: An apparatus for processing a defect candidate image, including: an imager for taking an enlarged image of a specimen; an image processor for processing the image taken by the imager to detect defect candidates existing on the specimen and classify the detected defect candidates into one of plural defect classes; a memory for storing information of the defect candidates including the images of the defect candidates and the classified defect class data outputted from the image processor; and a display unit having a display screen for displaying information stored in the memory, wherein the display unit displays an image of the defect candidates together with the defect class data stored in the memory and the displayed defect class data is changeable on the display screen, and the memory changes the stored defect class data of the displayed defect candidate to the changed defect class data.

Abstract: An apparatus for processing a defect candidate image, including: a scanning electron microscope for taking an enlarged image of a specimen by irradiating and scanning a converged electron beam onto the specimen and detecting charged particles emanated from the specimen by the irradiation; an image processor for processing the image taken by the scanning electron microscope to detect defect candidates on the specimen and classify the detected defect candidates into one of plural classes; a memory for storing output from the image processor including images of the detected defect candidates; and a display unit which displays information stored in the memory and an indicator, wherein the display unit displays a distribution of the detected and classified defect candidates in a map format by distinguishing by the classified class, and the display unit also displays an image of a defect candidate stored in the memory together with the map which is indicated on the map by the indicator.

Abstract: With complexity of a process, the setting of conditions for pattern measurement by an SEM image falls into difficulties. However, the present invention aims to realize the setting of easy and reliable measuring conditions even with respect to a pattern complex in structure. Points characterized in terms of an SEM image signal are calculated as candidates for measurement values. The calculated candidates for measurement values are displayed with being superimposed on the SEM image. An operator selects the optimum one from the displayed candidates and thereby determines the optimum image processing condition for measurement. The relationship between the result of measurement under a predetermined image processing condition and pattern portions has been made clear using model data of a sectional shape and an electron beam simulation image.

Abstract: An electron beam apparatus including a table which mounts a specimen and is movable in three dimensional directions, an electron beam optical system irradiating an electron beam onto a specimen and for detecting a secondary electron emanated from the specimen by the irradiation of the electron beam, and a surface height detection system for detecting height of the surface of the specimen mounted on the table. A focus control system controls a relative position between a focus position of the electron optical system and the table in accordance with information of the height, and an image processing system obtains an image from the detected secondary electron and processes the obtained image to detect a defect on the surface of the specimen.

Abstract: In a pattern inspecting apparatus, images of places which can be expected to be the same pattern are compared with one another. However, a comparison of images obtained by different stage scans and the occurrence of a place capable of being inspected only once lead to a deterioration in the performance of detecting various error defects and an area incapable of being inspected, respectively. For solving this problem, defects detected in a high sensitivity condition are regarded as defect candidates and a critical threshold value, used as a boundary to detect a smaller value as a defect, of a defect candidate portion is obtained by an image processing circuit or an image of the defect candidate portion is obtained by processing with software. Further, the critical threshold value thus obtained is compared with plural threshold values, thereby permitting plural inspection results to be obtained in a single inspection.