Abstract: An electrolysis device includes: a first electrolysis cell to reduce a reducible material and oxidize an oxidizable material; a second electrolysis cell to reduce the reducible material and oxidize the oxidizable material; a first supply source to supply a first fluid containing gas of the reducible material to the cells; a second supply source to supply a second fluid containing liquid of the oxidizable material to the cells; and at least one power supply to supply a first and a second power supply current to the first and the second electrolysis cell respectively. The at least one power supply can set values of the first and second power supply currents so that a current density of current flowing through the second electrolysis cell when reducing the reducible material is higher than a current density of current flowing through the first electrolysis cell when reducing the reducible material.

Abstract: A bonded body includes a ceramic substrate and a copper plate, in which the copper plate is bonded to the ceramic substrate via a bonding layer, the copper plate includes a surface perpendicular to a direction in which the ceramic substrate and the copper plate are bonded, and a number percentage of copper crystal grains having major diameters greater than 400 ?m in three 5 mm×5 mm regions included in the surface is not less than 0% and not more than 5%. The bonding temperature is favorably not more than 800° C. The number percentage of the copper crystal grains having major diameters greater than 400 ?m is favorably not more than 1%.

Abstract: A bonded body includes a ceramic substrate and a copper plate, in which the copper plate is bonded to the ceramic substrate via a bonding layer, the copper plate includes a surface perpendicular to a direction in which the ceramic substrate and the copper plate are bonded, and a number percentage of copper crystal grains having major diameters greater than 400 ?m in three 5 mm×5 mm regions included in the surface is not less than 0% and not more than 5%. The bonding temperature is favorably not more than 800° C. The number percentage of the copper crystal grains having major diameters greater than 400 ?m is favorably not more than 1%.

Abstract: An electrolysis cell 20 includes: a cathode 31 to reduce a reducible gas; an anode 41 to oxidize an oxidizable substance in an electrolytic solution, the cathode 41 containing titanium; and a separator 50 separating the cathode 31 from the anode 41. The separator 50 includes a porous membrane. The porous membrane gives a pore size distribution defined by a graph having a horizontal axis and a vertical axis, the horizontal axis representing pore sizes of through holes of the porous membrane, the pore sizes being determined by using a porometer, the vertical axis representing a pore size flow distribution of pore volumes corresponding to the pore sizes, and the pore size distribution having a peak top in a range of not less than 0.01 ?m nor more than 0.3 ?m. The porous membrane has an ISO air permeance of not less than 0.8 ?m/Pa·s nor more than 150 ?m/Pa·s.

Abstract: A bonded body according to an embodiment includes a ceramic substrate, a copper plate, and a bonding layer that is located on at least one surface of the ceramic substrate and bonds the ceramic substrate and the copper plate. The bonding layer includes titanium. The bonding layer includes first and second regions; the first region includes a layer including titanium as a major component; the layer is formed at an interface of the bonding layer with the ceramic substrate; and the second region is positioned between the first region and the copper plate. The bonded body has a ratio M1/M2 of a titanium concentration M1 at % in the first region and a titanium concentration M2 at % in the second region that is not less than 0.1 and not more than 5 when the Ti concentrations are measured by EDX respectively in measurement regions in the first and second regions.

Abstract: A carbon dioxide electrolytic device of an embodiment includes: an electrolysis cell including a cathode to reduce carbon dioxide, an anode to oxidize water or hydroxide ion and having a base containing titanium, a cathode flow path to supply carbon dioxide to the cathode, an anode flow path to supply an electrolytic solution containing water to the anode, and a separator to separate the anode and the cathode; a gas supply unit to supply carbon dioxide to the cathode flow path; at least either of a humidifier to humidify carbon dioxide supplied to the cathode flow path by using a humidification water, and a liquid pouring part to add the humidification water to the carbon dioxide; and an electrolytic solution supply unit to supply the electrolytic solution to the anode flow path. At least one of the electrolytic solution, the humidification water, and the supplied gas contains an oxidant.

Abstract: A bonded body according to an embodiment includes a substrate, a metal member, and a bonding layer. The bonding layer is provided between the substrate and the metal member. The bonding layer includes a first particle including carbon, a first region including a metal, and a second region including titanium. The second region is provided between the first particle and the first region. A concentration of titanium in the second region is greater than a concentration of titanium in the first region.

Abstract: An electrode catalyst layer for electrolytic cell 3 of an embodiment includes: a carbon material; a metal catalyst supported on the carbon material; and a water-repellent organic substance. In the electrode catalyst layer for electrolytic cell of the embodiment, the water-repellent organic substance includes an organic substance containing sulfur. A metal-sulfur bond is formed between the organic substance containing sulfur and the metal catalyst. A mass ratio (S/M) of a sulfur element (S) to a metal element (M) in the metal catalyst in the catalyst layer is not less than 0.03 nor more than 0.1.

Abstract: A bonded body according to an embodiment includes a ceramic substrate, a copper plate, and a bonding layer. The bonding layer is located on at least one surface of the ceramic substrate and bonds the ceramic substrate and the copper plate. The bonding layer includes Ag and Ti. The copper plate includes a first region, a second region, and a third region. The first region is separated from the bonding layer in a thickness direction. The second region is located between the bonding layer and the first region and has a higher Ag concentration than the first region. The third region is located between the bonding layer and the second region and has a lower Ag concentration than the second region.

Abstract: A structure according to the embodiment includes a first crystal grain, a second crystal grain, and a first region. The first crystal grain includes silicon nitride. The second crystal grain includes a first element selected from a first group consisting of scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, aluminum, chromium, zirconium, magnesium, zinc, titanium, gallium, beryllium, calcium, strontium, barium, hafnium, vanadium, niobium, tantalum, tungsten, iron, cobalt, nickel, and copper, and oxygen. The first region includes an oxide of the first element.

Abstract: According to the embodiment, a bonded body includes a ceramic substrate, a copper plate. A bonding layer is located on at least one surface of the ceramic substrate. The bonding layer bonds the ceramic substrate and the copper plate. The bonding layer includes a Ti reaction layer including titanium nitride or titanium oxide as a major component, and a plurality of first alloys positioned between the Ti reaction layer and the copper plate. Each of the plurality of first alloys includes at least one selected from a Cu—Sn alloy and a Cu—In alloy. The first alloys have mutually-different Sn concentrations or In concentrations. According to the embodiment, a warp amount can be reduced. A heating rate and a cooling rate in the bonding process can be increased. According to the embodiment, a silicon nitride substrate is favorable for the ceramic substrate.

Abstract: A bonded body according to an embodiment comprises a ceramic substrate, a copper plate, and a bonding layer provided on at least one surface of the ceramic substrate and bonding the ceramic substrate and the copper plate, in which the bonding layer contains Ag, Cu, Ti, and a first element being one or two selected from Sn and In, a Ti alloy of Ti and at least one selected from Ag, Cu, Sn, and In existing at a bonding boundary between the copper plate and the bonding layer, and the Ti alloy existing over not less than 30% per a length of 30 ?m at the bonding boundary.

Abstract: A bonded body according to an embodiment comprises a ceramic substrate, a copper plate, and a bonding layer provided on at least one surface of the ceramic substrate and bonding the ceramic substrate and the copper plate, in which the bonding layer contains Cu, Ti, and a first element being one or two selected from Sn and In, and the bonding layer includes a Ti-rich region in which a ratio (MTi/ME1) of a mass MTi of Ti to a mass ME1 of the first element being 0.5 or more and a Ti-poor region in which the ratio (MTi/ME1) being 0.1 or less.

Abstract: A bonded body according to an embodiment includes a ceramic substrate, a copper plate, and a bonding layer that is located on at least one surface of the ceramic substrate and bonds the ceramic substrate and the copper plate. The bonding layer includes titanium. The bonding layer includes first and second regions; the first region includes a layer including titanium as a major component; the layer is formed at an interface of the bonding layer with the ceramic substrate; and the second region is positioned between the first region and the copper plate. The bonded body has a ratio M1/M2 of a titanium concentration M1 at % in the first region and a titanium concentration M2 at % in the second region that is not less than 0.1 and not more than 5 when the Ti concentrations are measured by EDX respectively in measurement regions in the first and second regions.

Abstract: According to one embodiment, when a DSC curve is measured using a differential scanning calorimeter (DSC) for a brazing material for bonding a ceramic substrate and a metal plate, the brazing material has an endothermic peak within a range of not less than 550° C. and not more than 700° C. in a heating process. The brazing material favorably includes Ag, Cu, and Ti. The brazing material favorably has not less than two of the endothermic peaks within a range of not less than 550° C. and not more than 650° C. in the heating process.

Abstract: A bonded body includes a ceramic substrate and a copper plate, in which the copper plate is bonded to the ceramic substrate via a bonding layer, the copper plate includes a surface perpendicular to a direction in which the ceramic substrate and the copper plate are bonded, and a number percentage of copper crystal grains having major diameters greater than 400 ?m in three 5 mm×5 mm regions included in the surface is not less than 0% and not more than 5%. The bonding temperature is favorably not more than 800° C. The number percentage of the copper crystal grains having major diameters greater than 400 ?m is favorably not more than 1%.

Abstract: A structure includes: a ? silicon nitride crystal phase; and a Y2MgSi2O5N crystal phase. The structure gives a X-ray diffraction pattern by a ?-2? method, the pattern having a ratio of a peak intensity of a (22-1) plane of the Y2MgSi2O5N crystal phase to a peak intensity of a (200) plane of the ? silicon nitride crystal phase, the peak intensity of the (200) plane being determined at a position of 2?=27.0±1°, the peak intensity of the (22-1) plane being determined at a position of 2?=30.3±1°, and the ratio being 0.001 or more and 0.01 or less.

Abstract: A bonded body according to an embodiment includes a substrate, a metal member, and a bonding layer. The bonding layer is provided between the substrate and the metal member. The bonding layer includes a first particle including carbon, a first region including a metal, and a second region including titanium. The second region is provided between the first particle and the first region. A concentration of titanium in the second region is greater than a concentration of titanium in the first region.

Abstract: A structure includes: a ? silicon nitride crystal phase; and a Y2MgSi2O5N crystal phase. The structure gives a X-ray diffraction pattern by a ?-2? method, the pattern having a ratio of a peak intensity of a (22-1) plane of the Y2MgSi2O5N crystal phase to a peak intensity of a (200) plane of the ? silicon nitride crystal phase, the peak intensity of the (200) plane being determined at a position of 2?=27.0±1°, the peak intensity of the (22-1) plane being determined at a position of 2?=30.3±1°, and the ratio being 0.001 or more and 0.01 or less.

Abstract: According to one embodiment, a structure according to the embodiment includes a ? type silicon nitride type crystal phase and a Y2Si3O3N4 type crystal phase. In an X-ray diffraction pattern according to a ?-2? method of the structure, a ratio of a second peak intensity being maximum and appearing at 2?=31.93±0.1° with respect to a first peak intensity being maximum and appearing at 2?=27.03±0.1° is 0.005 or more and 0.20 or less.