Abstract: When to a memory cell array 21 a read/write operation is performed of the 7-bit data in which parity bits of 3 bits are added to data of 4 bits, an error correction is carried out in concern to each of the 7-bit data. The memory cell array is divided into memory units 31 to 37 each of which has four bits which are arranged along a direction of a word line. On writing the 7-bit data in the memory cell array, bits of the 7-bit data that are different from one another are written as written bit data along the direction of the word line in the memory units 31 to 37, respectively. In the 7-bit data, the written bit data has an interval off our bits. Error correcting circuits performs an error correction of the 7-bit data in each of the 7-bit data.

Abstract: An external clock signal is transmitted as a clock signal to a memory core through a first signal transmitting path. In response to activation of the clock signal CLK, memory core starts a read operation. Read data output from memory core is latched by a latch circuit. An external signal designating a latch timing is transmitted as a latch timing signal to the latch circuit through a second signal transmitting path. A delay circuit is provided in at least one of the first and second signal transmitting paths, so that the first and second signal transmitting paths come to have the same signal delay.

Abstract: An integrated circuit is provided that can achieve the unit test of its memory simply and positively. It makes a decision as to whether a memory is normal or not according to a 1-bit identity decision result output from an identity/nonidentity decision circuit. It obviates the need for assigning a plurality of decision terminals to each chip to be tested, making it possible to simultaneously test the same number of chips as the total number of the decision terminals of a tester, which is physically limited. It can improve test efficiency and reduce test cost.

Abstract: A method for testing a semiconductor memory device according to one embodiment comprises the steps of: checking data in all addresses of the semiconductor memory device for correctness in-units of m×n bits: ending if it is determined that data in all the semiconductor memory device; if there is a defective address, comparing each m-bit data constituting the (m×n)-bit data corresponding to the defective address with its expected value; and if the comparison result indicates that the m-bit data is erroneous, determining whether the defective semiconductor memory device can be repaired. Due to this step, man hours required for testing a semiconductor memory device having a wide data bus of an (m×n)-bit width can be considerably reduced.

Abstract: An external clock signal is transmitted as a clock signal to a memory core through a first signal transmitting path. In response to activation of the clock signal CLK, memory core starts a read operation. Read data output from memory core is latched by a latch circuit. An external signal designating a latch timing is transmitted as a latch timing signal to the latch circuit through a second signal transmitting path. A delay circuit is provided in at least one of the first and second signal transmitting paths, so that the first and second signal transmitting paths come to have the same signal delay.

Abstract: Subbanks are arranged in four regions of a DRAM macro having a rectangular shape, bank control circuits are arranged in a prescribed region between these subbanks, and internal read/write data buses are arranged in a region different from the region where the bank control circuits are arranged. Since there is no crossing of the bank control circuits and the internal read/write data buses, the bank control circuits can be efficiently arranged to reduce the layout area. Accordingly, a semiconductor integrated circuit device including multi-bank memories which operates stably at high speed can be provided without increase of an area occupied by a chip.

Abstract: A first internal power supply circuit receiving an external power supply voltage for generating a first internal power supply voltage and a second internal power supply circuit receiving the external power supply voltage for generating a second internal power supply voltage are provided within a DRAM. A sense amplifier operates by the first internal power supply voltage. A write driver and a GIO line precharge circuit operate by the second internal power supply voltage. A peripheral circuit operates by the external power supply voltage. As a result, the sense amplifier and the peripheral circuit will not be affected by the operation of the write driver and the GIO line precharge circuit.

Abstract: A test circuit includes a writing unit that outputs m-bit data captured upon receipt of a clock signal, branches the m-bit data n identical m-bit data signals, and stores the n m-bit data signals in a memory device. A function determining unit reads the n m-bit data signals from the memory, compares one of the n m-bit data signals to an m-bit expected value, and determines coincidence or non-coincidence between the n m-bit data signal and an expected value.

Abstract: A semiconductor device capable of solving a problem of a conventional semiconductor device in that a high density integration cannot be expected because each cell, which includes a pair of N and P wells disposed adjacently, requires a countermeasure against latchup individually. The high density integration prevents an effective countermeasure against latchup. The present semiconductor device arranges two cells, which are adjacent in the direction of an alignment of the N wells and P wells, in opposite directions so that two P wells (or two N wells) of the two adjacent cells are disposed successively, and includes an isolation layer extending across the two adjacent cells to enclose the two successively disposed P wells, thereby isolating the two P wells collectively from the substrate.

Abstract: A semiconductor integrated circuit includes a fuse element located on an insulating layer. The surface of the insulating layer is substantially smooth. The insulating layer is located over a capacitor. Wiring is located on the insulation layer. The fuse element and the wiring include the same material.

Abstract: A semiconductor memory device includes two subcircuits each including a memory circuit, a semiconductor circuit, and a logical circuit. Connection pads are divided into only two parallel rows located along the outer periphery of the semiconductor memory device. Each of the pads may include a probe region against which a probe is pressed for testing the semiconductor memory circuit, and a wire region to which a wire is connected upon packaging.

Abstract: A semiconductor memory device is constituted such that, when a first wiring layer provides a bit line of a first common complementary data line pair and a third wiring layer provides a bit line of a second common complementary data line pair, a second wiring layer makes an overlapped area between the bit line and the bit bar line of the second common complementary dada line pair equal to the bit line of the first common complementary data line pair and also an overlapped area between the bit line and the bit bar line of the first common complementary data line pair equal to the bit line of the second common complementary data line pair.

Abstract: A variable delay circuit for controlling delay time includes P channel transistors connected in parallel, with respective source electrodes connected to a power supply, respective drain electrodes connected to an output terminal for providing delayed signal, and respective gate electrodes connected to respective control signal input terminals for receiving control signals. The circuit further includes N channel transistors with respective source electrodes connected to ground, respective drain electrodes connected to the output terminal, and respective gate electrode connected to the respective control signal input terminals. Identical or mutually inverted data signals or control signals are supplied to the respective gate electrodes of the P channel transistors and the respective gate electrodes of the N channel transistors.

Abstract: Columns included in a sub-block are divided into first and second groups. If a defective memory cell column is present in the first group, an address comparison circuit activates a signal to select a redundant memory cell column, then selection prohibiting signal attains an "L" level based on information programmed in a programming circuit, a selection of a column in the first group is prohibited, and a redundant memory cell column selection signal is activated. Meanwhile, a normal selecting operation is performed to the second column group.

Abstract: A semiconductor integrated circuit device includes a logic circuit and a synchronous dynamic random access memory including a core unit, integrated on a single semiconductor chip. The semiconductor integrated circuit device includes a synchronous dynamic random access memory control circuit which receives external control signals for the synchronous dynamic random access memory from the logic circuit, and outputs internal control signals to the core unit of the synchronous dynamic random access memory. For testing of semiconductor integrated circuit device, external test signals are provided through external terminals. The external test signals are selected by a selector, and are provided to the core unit of the synchronous dynamic random access memory for testing.

Abstract: The objects are to speed up the operation of an integrated circuit device having a sequential circuit and increase margin of phase synchronization for performing data processing of time sequential circuit. The phase-locked circuit (57) is provided in the integrated circuit (50), and the clock signal (CK7) which is inputted from the outside through the phase-locked circuit is supplied to the sequential circuit (52). The data outputted from the sequential circuit (52) is fed back from the output end of the buffer (Bu56) to the phase-locked circuit (57). In the phase-locked circuit (57), the clock signal (CK7) inputted through the buffer (Bu50) and the output data of the sequential circuit (52) are compared in phase and the phase of the clock signal outputted to the sequential circuit (52) is adjusted so that the phases thereof agree. The output data (DO7) outputted from the sequential circuit (52) is not delayed with respect clock signal (CK7).

Abstract: A synchronized clock generating apparatus includes a delayed clock generating circuit including a plurality of serially connected delaying elements for generating delayed clock signals delayed successively to an incoming basic clock signal. A plurality of storage elements store therein a predetermined level in response to transitions occurring in associated ones of the basic and delayed clock signals after an asynchronous trigger signal is applied thereto. A clock selection logic circuit is controlled by the output signal from the storage elements for detecting the clock signal transition occurring closest in time to the application of the asynchronous trigger signal, and for selecting a desired one of the clock signals based on the result of the detection, as a synchronized clock input signal.

Abstract: A synchronized clock generating apparatus includes a delayed clock generating circuit including a plurality of serially connected delaying elements for generating delayed clock signals delayed successively relative to an incoming basic clock signal. Storage means includes a plurality of storage elements storing therein a predetermined level in response to transitions occurring in associated ones of said basic and delayed clock signals after a trigger signal which is asynchronous with the basic clock signal is applied thereto. A clock selection logic circuit is controlled by the output signal of the storage means for detecting the clock signal transition occurring closest in time to the application of the asynchronous trigger signal, and for selecting a desired one of said clock signals, based on the result of the detection, as a synchronized clock signal output.

Abstract: It is an object to accurately obtain the period of the horizontal synchronizing signal in the video signal. The number of internal pulses are measured in a predetermined measurement period defined by the horizontal synchronizing signal. It is assumed that the periods of the horizontal synchronizing signal and the internal pulse are denoted as T.sub.H and T.sub.S, and the measurement period is defined by one period of a divided signal NS which is obtained by N-dividing the horizontal synchronizing signal. In this case, the length of the measurement period is N.multidot.T.sub.H. The period of the horizontal synchronizing signal is obtained when the internal pulse is activated K times in the measurement period. After the measurement period is started, the divided signal NS transits between the Kth activation of the internal pulse and the (K+1)th activation, and the measurement period is ended. Accordingly, there is the relation of T.sub.S .multidot.K<N.multidot.T.sub.H <T.sub.S .multidot.(K+1). The error .

Abstract: There is disclosed a synchronizing pulse generating circuit wherein a synchronization lack correcting portion (600) processes a synchronizing signal (S601) to provide a corrected synchronizing signal (S600), and a synchronizing clock generating portion (700) generates a synchronizing clock (S700) accurately synchronized with the corrected synchronizing signal (S600), and then a synchronizing pulse generating portion (800) counts the synchronizing clock (S700) to provide a synchronizing signal (S800) accurately synchronized with the synchronizing signal S601, whereby the synchronizing pulse generating circuit generates high-accuracy synchronizing pulses without exteriorly attached parts and is adapted for generation of HD pulses for use in a deflecting system of a multi-synchronization type display monitor.