Patents by Inventor Makoto Iida

Makoto Iida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240131832
    Abstract: Provided is a method for manufacturing a laminate that is excellent in adhesion between the copper foil and the resin film while using a polyvinyl acetal resin having low reactivity with the copper foil. This method includes the steps of providing a copper foil having on at least one side a treated surface on which an amount of metal components is 30 atomic % or more and 40 atomic % or less, and attaching or forming a polyvinyl acetal resin film on the treated surface of the copper foil to form a laminate. The amount of metal components is a proportion of Cr, Ni, Cu, Zn, Mo, Co, W, and Fe in a total amount of N, O, Si, P, S, Cl, Cr, Ni, Cu, Zn, Mo, Co, W, and Fe when the treated surface is subjected to elemental analysis by X-ray photoelectron spectroscopy (XPS).
    Type: Application
    Filed: February 8, 2022
    Publication date: April 25, 2024
    Applicant: MITSUI MINING & SMELTING CO., LTD.
    Inventors: Hiroto IIDA, Makoto HOSOKAWA, Misato MIZOGUCHI, Shinya HIRAOKA, Toshiyuki SHIMIZU
  • Publication number: 20240123707
    Abstract: Provided is a method for manufacturing a laminate that is excellent in adhesion between a copper foil and a resin film while using a polyvinyl acetal resin having low reactivity with the copper foil. This method includes the steps of providing a copper foil having a treated surface having a developed interfacial area ratio Sdr of 0.50% or more and 9.00% or less and a root mean square height Sq of 0.010 ?m or more and 0.200 ?m or less on at least one side, and attaching or forming a polyvinyl acetal resin film on the treated surface of the copper foil to form a laminate. The Sdr and Sq are values measured in accordance with ISO 25178 under conditions in which a cutoff wavelength of an S-filter is 0.55 ?m, and a cutoff wavelength of an L-filter is 10 ?m.
    Type: Application
    Filed: February 8, 2022
    Publication date: April 18, 2024
    Applicant: MITSUI MINING & SMELTING CO., LTD.
    Inventors: Hiroto IIDA, Makoto HOSOKAWA, Misato MIZOGUCHI, Shinya HIRAOKA, Toshiyuki SHIMIZU
  • Patent number: 11766754
    Abstract: A conveyance apparatus includes two clamp mechanisms. Each of the clamp mechanisms is configured to freely change its state among a fully clamping state, a semi-clamping state, and a non-clamping state. When an object is delivered from a first clamp mechanism that is holding the object to a second clamp mechanism, the second clamp mechanism is brought into the semi-clamping state to temporarily hold the object. Then, the first clamp mechanism is brought into the non-clamping state and the second clamp mechanism is brought into the fully clamping state.
    Type: Grant
    Filed: March 27, 2018
    Date of Patent: September 26, 2023
    Assignee: AISIN CORPORATION
    Inventors: Yuichiro Yoshimura, Atsushi Kohama, Atsushi Yoshida, Makoto Iida, Syuntaro Nagai
  • Patent number: 11048900
    Abstract: Proposed are an image reading device and method of a simple configuration which can be easily operated intuitively by the operator, and which enables the accurate reading of a 2D code. With the image reading device which optically reads an image and the image reading method to be executed by the image reading device of the present invention, a first aerial image, which indicates a position over which the image is to be placed, is aerially formed at a focal position of the camera, the image placed in conformity with the first aerial image is read with a camera, and the first aerial image is aerially formed at a focal position of the camera.
    Type: Grant
    Filed: July 12, 2019
    Date of Patent: June 29, 2021
    Assignee: HITACHI-OMRON TERMINAL SOLUTIONS, CORP.
    Inventors: Makoto Iida, Shoko Isono, Takaaki Fujii
  • Publication number: 20200143132
    Abstract: Proposed are an image reading device and method of a simple configuration which can be easily operated intuitively by the operator, and which enables the accurate reading of a 2D code. With the image reading device which optically reads an image and the image reading method to be executed by the image reading device of the present invention, a first aerial image, which indicates a position over which the image is to be placed, is aerially formed at a focal position of the camera, the image placed in conformity with the first aerial image is read with a camera, and the first aerial image is aerially formed at a focal position of the camera.
    Type: Application
    Filed: July 12, 2019
    Publication date: May 7, 2020
    Applicant: Hitachi-Omron Terminal Solutions, Corp.
    Inventors: Makoto IIDA, Shoko ISONO, Takaaki FUJII
  • Publication number: 20200016710
    Abstract: A conveyance apparatus includes two clamp mechanisms. Each of the clamp mechanisms is configured to freely change its state among a fully clamping state, a semi-clamping state, and a non-clamping state. When an object is delivered from a first clamp mechanism that is holding the object to a second clamp mechanism, the second clamp mechanism is brought into the semi-clamping state to temporarily hold the object. Then, the first clamp mechanism is brought into the non-clamping state and the second clamp mechanism is brought into the fully clamping state.
    Type: Application
    Filed: March 27, 2018
    Publication date: January 16, 2020
    Applicant: AISIN AW CO., LTD.
    Inventors: Yuichiro YOSHIMURA, Atsushi KOHAMA, Atsushi YOSHIDA, Makoto IIDA, Syuntaro NAGAI
  • Publication number: 20190378740
    Abstract: There is provided a teaching apparatus for a substrate transfer system including a substrate transfer device and a substrate receiving device. The substrate transfer device is configured to hold a substrate. The substrate receiving device is configured to receive the substrate from the substrate transfer device. The teaching apparatus includes a teaching substrate configured to be held to the substrate transfer device, a camera mountable to the teaching substrate, and a controller that controls an operation of the substrate transfer device holding the teaching substrate and/or the substrate receiving device.
    Type: Application
    Filed: June 11, 2019
    Publication date: December 12, 2019
    Inventors: Hidetatsu Isokawa, Koichi Hashimoto, Mitsuhiko Inaba, Makoto Iida
  • Publication number: 20190227529
    Abstract: A product production management system includes a display that displays a progress list screen of progresses in a plurality of product production lines in a factory. When a first system user selects one of the product production lines for which occurrence of an abnormality or delay has occurred, the display transits the progress list screen to a first screen displaying a predetermined one of a plurality of options in order to guide the first system user to more preferentially designate the predetermined option in comparison with other options. The options are necessary to check situations of the selected production line. When a second system user selects one of the product production lines for which occurrence of an abnormality or delay has occurred, the display transits the progress list screen to a second screen displaying a plurality of options that are necessary to check situations of the selected product production line.
    Type: Application
    Filed: September 26, 2017
    Publication date: July 25, 2019
    Inventors: Makoto IIDA, Takeshi MURAKAMI, Shinji MIYASHITA
  • Publication number: 20170097784
    Abstract: A storage control device includes a memory and a processor. The memory stores first information about a cumulative amount of data which has been written into a plurality of storage devices respectively. The plurality of storage devices have a limit in a cumulative amount of data which is capable to be written into the respective storage devices. The processor selects a first storage group from the plurality of storage groups on basis of the first information. The processor selects a second storage group from the plurality of storage groups. The processor exchanges data of a first storage device which belongs to the first storage group and data of a second storage device which belongs to the second storage group with each other. The processor causes the first storage device to belong to the second storage group and causes the second storage device to belong to the first storage group.
    Type: Application
    Filed: September 19, 2016
    Publication date: April 6, 2017
    Applicant: FUJITSU LIMITED
    Inventor: Makoto IIDA
  • Patent number: 8931913
    Abstract: A motorcycle is provided a trunk having a storage compartment. The trunk includes a trunk body member having an upper opening, and including an outer body member and an inner body member provided inside the outer body member, and a lid member attached to the trunk body member so as to cover the opening of the trunk body member and provided with a lamp device for illuminating a rear side of the trunk, the lid member including an outer lid member and an inner lid member provided inside the outer lid member. A wire cord of the lamp device is passed through a gap between the outer lid member and the inner lid member and a gap between the outer body member and the inner body member.
    Type: Grant
    Filed: March 11, 2013
    Date of Patent: January 13, 2015
    Assignee: Suzuki Motor Corporation
    Inventors: Michio Nagayoshi, Makoto Iida
  • Publication number: 20130240584
    Abstract: A motorcycle is provided a trunk having a storage compartment. The trunk includes a trunk body member having an upper opening, and including an outer body member and an inner body member provided inside the outer body member, and a lid member attached to the trunk body member so as to cover the opening of the trunk body member and provided with a lamp device for illuminating a rear side of the trunk, the lid member including an outer lid member and an inner lid member provided inside the outer lid member. A wire cord of the lamp device is passed through a gap between the outer lid member and the inner lid member and a gap between the outer body member and the inner body member.
    Type: Application
    Filed: March 11, 2013
    Publication date: September 19, 2013
    Applicants: SUZUKI MOTOR CORPORATION
    Inventors: Michio NAGAYOSHI, Makoto IIDA
  • Patent number: 8308864
    Abstract: The present invention is a single-crystal manufacturing method based on the Czochralski method, comprising at least the steps of: producing a melt by heating and melting a crystalline raw material in a crucible with a heater; maturing the melt by keeping the melt at a high temperature; growing a single crystal after dipping a seed crystal into the matured melt, wherein the heater and the crucible are relatively moved up and down in the step of maturing. As a result, there is provided a single-crystal manufacturing method that enables the generation of dislocation to be effectively suppressed and a high quality single crystal to be manufactured at good yield, particularly in case of pulling the single crystal having a large diameter, in manufacture of the single crystal.
    Type: Grant
    Filed: November 27, 2009
    Date of Patent: November 13, 2012
    Assignee: Shin-Etsu Handotai Co., Ltd.
    Inventors: Makoto Iida, Kazuo Matsuzawa
  • Publication number: 20110271898
    Abstract: The present invention is a single-crystal manufacturing method based on the Czochralski method, comprising at least the steps of: producing a melt by heating and melting a crystalline raw material in a crucible with a heater; maturing the melt by keeping the melt at a high temperature; growing a single crystal after dipping a seed crystal into the matured melt, wherein the heater and the crucible are relatively moved up and down in the step of maturing. As a result, there is provided a single-crystal manufacturing method that enables the generation of dislocation to be effectively suppressed and a high quality single crystal to be manufactured at good yield, particularly in case of bulling the single crystal having a large diameter, in manufacture of the single crystal.
    Type: Application
    Filed: November 27, 2009
    Publication date: November 10, 2011
    Applicant: SHIN-ETSU HANDOTAI CO., LTD.
    Inventors: Makoto Iida, Kazuo Matsuzawa
  • Patent number: 7790267
    Abstract: A workpiece boring/cutting operation aiding plate material comprising a rubber-containing styrene resin composition and an inorganic filler, wherein these are compounded in a weight ratio of 80:20 to 40:60; and a molding making use of the same.
    Type: Grant
    Filed: January 30, 2006
    Date of Patent: September 7, 2010
    Assignee: PS Japan Corporation
    Inventors: Yasuhito Kinpara, Makoto Iida
  • Patent number: 7749865
    Abstract: A method for producing semiconductor wafers, from a semiconductor ingot, wherein an oxygen concentration distribution in the growth axis direction is measured in the ingot state (F2), a position at which the oxygen concentration is maximum or minimum in a range of a predetermined length is determined as a cut position according to the measurement results (F3), the ingot is cut in a perpendicular direction to the growth axis at the cut position into blocks each having the oxygen concentrations being maximum and minimum at both ends thereof (F4), each of the blocks is sliced, and thereby semiconductor wafers are produced. Thereby, there can be provided a technique by which when semiconductor wafers are produced from a semiconductor ingot, wafers having oxygen concentration being in a predetermined standard range can be certainly produced.
    Type: Grant
    Filed: January 20, 2005
    Date of Patent: July 6, 2010
    Assignee: Shin-Etsu Handotai Co., Ltd.
    Inventor: Makoto Iida
  • Publication number: 20100031869
    Abstract: The present invention provides a system for manufacturing a silicon single crystal which designs manufacturing conditions under which a value of F/G is controlled to fall within a predetermined range in order that a crystal quality of a silicon single crystal manufactured by a pulling apparatus using the CZ method falls within a target standard, including, automatically, at least: means 1 tentatively designing manufacturing conditions of a silicon single crystal in a subsequent batch from a crystal quality result of a silicon single crystal in a previous batch; means 2 calculating a correction amount from an amount of change in F and/or G due to constituent members of the pulling apparatus in the subsequent batch; means 3 calculating a correction amount from an amount of change in F and/or G due to a manufacturing process in the subsequent batch; and means 4 adding the correction amount by the means 2 and/or the means 3 to the manufacturing conditions by the means 1 to calculate manufacturing conditions in th
    Type: Application
    Filed: May 28, 2007
    Publication date: February 11, 2010
    Applicant: Shin-Etsu Handotai Co., Ltd
    Inventors: Makoto Iida, Nobuaki Mitamura, Takahiro Yanagimachi
  • Patent number: 7582159
    Abstract: A method for producing a single crystal by Czochralski method with pulling a seed crystal from a raw material melt, wherein in which a range of a pulling rate of pulling a single crystal, a temperature gradient at a solid-liquid interface and a highest temperature at an interface between a crucible and a raw material melt are defined. The single crystal is pulled with controlling the pulling rate and/or the temperature gradient at a solid-liquid interface within the determined range. The method produces a single crystal in which a desired defect region and/or a desired defect-free region can be determined more precisely and a single crystal with desired quality can be more surely pulled.
    Type: Grant
    Filed: April 26, 2004
    Date of Patent: September 1, 2009
    Assignee: Shin-Etsu Handotai Co., Ltd.
    Inventor: Makoto Iida
  • Patent number: 7571641
    Abstract: A laminarization lattice of thin plastic and a gate are provided in a body at respective positions so that a distance between the laminarization lattice and the gate is not less than a half of an entire length of the body, and the laminarization lattice and the body are integrally molded. That is, a configuration of the invention enables a hesitation occurring in the lattice of thin plastic to be suppressed, and a resin to be injected at single stroke of a short time to form the lattice of thin plastic.
    Type: Grant
    Filed: June 11, 2007
    Date of Patent: August 11, 2009
    Assignee: Hitachi, Ltd.
    Inventors: Masayuki Kozawa, Makoto Iida
  • Patent number: 7437926
    Abstract: An air flow rate measuring device is provided in which a pressure loss across a grid therein due to the load which is generated when a hose band is tightened is reduced and deterioration of its measurement accuracy due to the grid deformation is prevented. The grid is configured to have a grid portion which absorbs deformation at the outer periphery thereof, and another grid portion which does not absorb deformation at the inner periphery thereof. In order to make the grid portions independent of each other, the grid is provided with a frame, and the mesh grid inside of the frame which maintains a rectifying effect, prevents the deterioration of the measurement accuracy, and does not absorb deformation, and the grid outside of the frame absorbs deformation.
    Type: Grant
    Filed: June 5, 2007
    Date of Patent: October 21, 2008
    Assignee: Hitachi, Ltd.
    Inventors: Masayuki Kozawa, Makoto Iida, Akio Yasukawa, Mari Hikota, Takahiro Miki
  • Patent number: 7384477
    Abstract: The present invention is a method for producing a single crystal with pulling the single crystal from a raw material melt in a chamber by CZ method, wherein when growing the single crystal, where a pulling rate is defined as V and a temperature gradient of the crystal is defined as G during growing the single crystal, the temperature gradient G of the crystal is controlled by changing at least two or more of pulling conditions. Thereby, there is provided a method for producing a single crystal in which when the single crystal is grown by CZ method, V/G can be controlled without lowering a pulling rate V, and thus the single crystal including a desired defect region can be produced effectively for a short time.
    Type: Grant
    Filed: May 28, 2004
    Date of Patent: June 10, 2008
    Assignee: Shin-Etsu Handotai Co., Ltd.
    Inventors: Masahiro Sakurada, Makoto Iida, Nobuaki Mitamura, Atsushi Ozaki