Abstract: A thin plate thermally coupled to a cooling tube is positioned between a heating plate and a substrate and is adapted to serve as a heating plate or a cooling plate for the substrate. The thin plate and heating plate may be positioned in a load lock for the expeditious heating and cooling of large-area substrates. The cooling tube may include a first conduit, a second conduit disposed inside the first conduit having substantially no contact with the first conduit and containing a working fluid, and an isolation region disposed between the first conduit and the second conduit. The working fluid may be thermally decoupled from the thin plate by evacuating the isolation region and thermally coupled to the thin plate by filling the isolation region with a heat-conducting gas.

Abstract: Embodiments disclosed herein generally provide a load lock chamber capable of controlling the temperature of the substrate therein. The load lock chamber may have one or more cooling fluid introduction passages that extend across the chamber. Cooling fluid, such as nitrogen gas, may flow through the cooling fluid passage and enter the load lock chamber. The cooling fluid passages may have openings to permit the cooling fluid to exit the passages and enter the load lock chamber. The openings may be arranged to permit a greater amount of cooling fluid to enter the load lock at locations corresponding to the substrate positions that are in contact with an end effector that places the substrate into the load lock chamber. Additionally, the openings may be arranged to permit a greater amount if cooling fluid to enter the load lock chamber in the center of the chamber as compared to the edge of the chamber.

Abstract: Methods and systems for improving the alignment between a previously formed feature and a subsequently formed feature are provided. An exemplary method can include laser scribing a workpiece (104, 550) having a previously formed first feature. The exemplary method includes imaging the workpiece (104, 550) with an imaging device (320, 420, 554, 640) so as to capture a plurality of positions of the first feature on the workpiece (104, 550) relative to the laser-scribing device (100). The exemplary method further includes using the captured positions to align output from the laser-scribing device (100) in order to form a second feature on the workpiece (104, 550) at a controlled distance from the first feature.

Abstract: An apparatus and method incorporating at least two sensors that detect the presence of a substrate is provided. In one embodiment, a method for transferring a substrate in a processing system is described. The method includes positioning a substrate on an end effector in a first chamber, moving the substrate through an opening between the first chamber and a second chamber along a substrate travel path, and sensing opposing sides of the substrate travel path using at least two sensors positioned proximate to the opening, each of the at least two sensors defining a beam path that is directed through opposing edge regions of the substrate when at least a portion of an edge region traverses the beam path.

Abstract: Embodiments of the present invention generally provide an apparatus for providing a uniform thermal profile to a plurality of large area substrates during thermal processing. In one embodiment, an apparatus for thermal processing large area substrates includes a chamber having a plurality of processing zones disposed therein that are coupled to a lift mechanism. The lift mechanism is adapted to vertically position the plurality of processing zones within the chamber. Each processing zone further includes an upper heated plate, a lower heated plate adapted to support a first substrate thereon and an unheated plate adapted to support a second substrate thereon, wherein the unheated plate is disposed between the upper and lower heated plates.

Abstract: An apparatus and method incorporating at least two sensors that detect the presence of substrate defects, such as breakage or misalignment, along the lengths of at least two parallel edges of a moving substrate. In one embodiment, an apparatus for detecting substrate defects includes a sensor arrangement including at least two sensors that continuously sense a substrate near at least two parallel edges of the substrate as the substrate passes the sensors. In another embodiment, an apparatus for detecting substrate defects includes a robot having a substrate support surface, and a sensor arrangement including at least two sensors that continuously sense a substrate near at least two parallel edges of the substrate during substrate transfer on the substrate support surface.

Abstract: A method for making a film stack containing one or more metal-containing layers and a substrate processing system for forming the film stack on a substrate are provided. The substrate processing system includes at least one transfer chamber coupled to at least one load lock chamber, at least one first physical vapor deposition (PVD) chamber configured to deposit a first material layer on a substrate, and at least one second PVD chamber for in-situ deposition of a second material layer over the first material layer within the same substrate processing system without breaking the vacuum or taking the substrate out of the substrate processing system to prevent surface contamination, oxidation, etc. The substrate processing system is configured to provide high throughput and compact footprint for in-situ sputtering of different material layers in designated PVD chambers.

Abstract: A substrate support assembly and method for controlling the temperature of a substrate within a process chamber are provided. A substrate support assembly includes an thermally conductive body comprising a stainless steel material, a substrate support surface on the surface of the thermally conductive body and adapted to support a large area substrate thereon, one or more heating elements embedded within the thermally conductive body, a cooling plate positioned below the thermally conductive body, a base support structure comprising a stainless steel material, positioned below the cooling plate and adapted to structurally support the thermally conductive body, and one or more cooling channels adapted to be supported by the base support structure and positioned between the cooling plate and the base support structure. A process chamber comprising the substrate support assembly of the invention is also provided.

Abstract: The present invention generally comprises a monolithic sputtering target assembly for depositing material onto large area substrates. The sputtering target assembly may comprise both the sputtering target and the backing plate in one monolithic structure. By having the backing plate and sputtering target as a monolithic structure, bonding is not necessary. Additionally, cooling channels may be drilled into the monolithic structure so that cooling fluid may flow within the sputtering target assembly without the need for a separate cooling assembly resting on back of the sputtering target assembly.

Abstract: A magnetron assembly including one or more magnetrons each forming a closed plasma loop on the sputtering face of the target. The target may include multiple strip targets on which respective strip magnetrons roll and are partially supported on a common support plate through a spring mechanism. The strip magnetron may be a two-level folded magnetron in which each magnetron forms a folded plasma loop extending between lateral sides of the strip target and its ends meet in the middle of the target. The magnets forming the magnetron may be arranged in a pattern having generally uniform straight portions joined by curved portion in which extra magnet positions are available near the corners to steer the plasma track. Multiple magnetrons, possibly flexible, may be resiliently supported on a scanned support plate and individually partially supported by rollers on the back of one or more targets.

Abstract: The present invention discloses a physical vapor deposition apparatus and a method for sputtering. When sputtering from a plurality of sputtering targets, a plurality of magnetrons may be used. The number of magnetrons may correspond to the number of targets. Each magnetron may be different to control the amount of material deposited from each sputtering target and the specific location on the sputtering target that is sputtered. The magnetrons may be spaced a different distance from the backing plate and hence, the target. The magnetrons may be of different sizes. The magnetrons may have a different magnetic path. The magnetrons may have a different pitch. The magnetrons may have a different magnitude. By tailoring the distance, size, path, pitch, and magnitude, uniform sputtering and target erosion may be achieved.

Abstract: A cooled dark space shield for a multi-cathode, large area PVD apparatus is disclosed. For multi-cathode systems, a dark space shield between adjacent cathodes/targets may be beneficial. The shields may be grounded and provide a path to ground for electrons present within a sputtering plasma. Because the shields are between adjacent targets, the grounded shields may contribute to the formation of a uniform plasma within the processing space by acting as anodes. As the temperatures in the chamber fluxuate between a processing temperature and a downtime temperature, the shields may expand and contract. Cooling the shields reduces the likelihood of expansion and contraction and thus, reduces the amount of flaking that may occur. Embossing the surface of the shields may reduce the amount of material deposited onto the shields and control the expansion and contraction of the shields.

Abstract: A physical vapor deposition (PVD) apparatus and a PVD method are disclosed. Extending an anode across the processing space between the target and the substrate may increase deposition uniformity on a substrate. The anode provides a path to ground for electrons that are excited in the plasma and may uniformly distribute the electrons within the plasma across the processing space rather than collect at the chamber walls. The uniform distribution of the electrons within the plasma may create a uniform deposition of material on the substrate. The anodes may be cooled with a cooling fluid to control the temperature of the anodes and reduce flaking. The anodes may be disposed across the process space perpendicular to the long side of a magnetron that may scan in two dimensions across the back of the sputtering target. The scanning magnetron may reduce localized heating of the anode.

Abstract: The present invention generally comprises a top shield for shielding a shadow frame within a PVD chamber. The top shield may remain in a stationary position and at least partially shield the shadow frame to reduce the amount of material that may deposit on the shadow frame during processing. The top shield may be cooled to reduce the amount of fluxuation in temperature of the top shield and shadow frame during processing and/or during down time.

Abstract: A method and apparatus for electrically coupling a plurality of target together is disclosed. Individually powered targets allow greater control over depositing during a sputtering process. By individually powering the targets, different power levels may be applied to different targets. The targets may additionally be coupled together with a resistor. The resistor allows the targets to have a more controlled power level.

Abstract: In certain embodiments, the invention comprises a backing plate for accommodating large area sputtering targets is disclosed. The backing plate assembly has cavities carved into the back surface of the backing plate. The backing plate may further include cooling channels that run through the backing plate to control the temperature of the backing plate and the target. The cavities may be filled with a material that has a lower density than the backing plate. Additionally, the entire back surface may be covered with the material to produce a smooth surface upon which a magnetron may move during a PVD process.

Abstract: A physical vapor deposition target assembly is configured to isolate a target-bonding layer from a processing region. In one embodiment, the target assembly comprises a backing plate, a target having a first surface and a second surface, and a bonding layer disposed between the backing plate and the second surface. The first surface of the target is in fluid contact with a processing region and the second surface of the target is oriented toward the backing plate. The target assembly may include multiple targets.

Abstract: A thin plate thermally coupled to a cooling tube is positioned between a heating plate and a substrate and is adapted to serve as a heating plate or a cooling plate for the substrate. The thin plate and heating plate may be positioned in a load lock for the expeditious heating and cooling of large-area substrates. The cooling tube may include a first conduit, a second conduit disposed inside the first conduit having substantially no contact with the first conduit and containing a working fluid, and an isolation region disposed between the first conduit and the second conduit. The working fluid may be thermally decoupled from the thin plate by evacuating the isolation region and thermally coupled to the thin plate by filling the isolation region with a heat-conducting gas.

Abstract: The present invention generally comprises one or more cooled anodes shadowing one or more gas introduction tubes where both the cooled anodes and the gas introduction tubes span a processing space defined between one or more sputtering targets and one or more substrates within a sputtering chamber. The gas introduction tubes may have gas outlets that direct the gas introduced away from the one or more substrates. The gas introduction tubes may introduce reactive gas, such as oxygen, into the sputtering chamber for depositing TCO films by reactive sputtering. During a multiple step sputtering process, the gas flows (i.e., the amount of gas and the type of gas), the spacing between the target and the substrate, and the DC power may be changed to achieve a desired result.

Abstract: A magnetron scanning and support mechanism in which the magnetron is partially supported from an overhead scanning mechanism through multiple springs coupled to different horizontal locations on the magnetron and partially supported from below at multiple locations on the target, on which it slides or rolls. In one embodiment, the yoke plate is continuous and uniform. In another embodiment, the magnetron's magnetic yoke is divided into two flexible yokes, for example, of complementary serpentine shape and each supporting magnets of respective polarity. The yokes separated by a gap sufficiently small that the two yokes are magnetically coupled. Each yoke has its own set of spring supports from above and rolling/sliding supports from below to allow the magnetron shape to conform to that of the target. Alternatively, narrow slots are formed in a unitary yoke.