Abstract: In a semiconductor device having an LDMOSFET, a source electrode is at the back surface thereof. Therefore, to reduce electric resistance between a source contact region in the top surface and the source electrode at the back surface, a poly-silicon buried plug is provided which extends from the upper surface into a P+-type substrate through a P-type epitaxial layer, and is heavily doped with boron. Dislocation occurs in a mono-crystalline silicon region around the poly-silicon buried plug to induce a leakage failure. The semiconductor device has a silicon-based plug extending through the boundary surface between first and second semiconductor layers having different impurity concentrations. At least the inside of the plug is a poly-crystalline region. Of the surface of the poly-crystalline region, the portions located on both sides of the foregoing boundary surface in adjacent relation thereto are each covered with a solid-phase epitaxial region.

Abstract: A metal oxide film suitable for protection of metals, composed mainly of aluminum. A metal oxide film includes a film of an oxide of a metal composed mainly of aluminum, having a thickness of 10 nm or greater, and exhibiting a moisture release rate from the film of 1E18 mol./cm2 or less. Further, there is provided a process for producing a metal oxide film, wherein a metal composed mainly of aluminum is subjected to anodic oxidation in a chemical solution of 4 to 10 pH value so as to obtain a metal oxide film.

Abstract: A seed substrate is placed to face a formation substrate, and then a gas containing silicon is introduced and chemical vapor deposition is performed. There is no particular limitation on a kind of a material used for the formation substrate as long as the material can withstand the temperature at which the reduced pressure chemical vapor deposition is performed. A group of silicon whiskers which does not include a seed atom can be grown directly on and in contact with the formation substrate. Further, the substrate provided with the group of whiskers can be applied to a solar cell, a lithium ion secondary battery, and the like, by utilizing surface characteristics of the group of whiskers.

Abstract: A protective film structure of a metal member for use in an apparatus for manufacturing a semiconductor or the like, the protective film structure including a first coating layer of faultless aluminum oxide formed by direct anodic oxidation of a base-material metal of an aluminum alloy; and a second coating layer formed on the first coating layer and made of yttrium oxide by a plasma spraying method.

Abstract: To provide a cleaning solution for a substrate for a semiconductor device which is excellent in the ability to remove particles, organic contaminants, metal contaminants and composite contaminants of an organic matter and a metal attached on a substrate surface, whereby the substrate surface can be highly cleaned, without being corroded. Particularly, to provide a cleaning solution which is excellent in the ability to clean low dielectric constant (Low-k) materials on which liquid is easily repelled due to hydrophobic and of which the ability to remove particles is poor. A cleaning solution for a substrate for a semiconductor device, which comprises the following components (A) and (B): (A) an organic acid (B) a nonionic surfactant having an HLB value of from 5 to less than 13.

Abstract: The present invention relates to a compound represented by the formula (I): wherein R1 represents a hydrogen atom or the like; R2 represents lower alkyl or the like; R3 and R4 represent lower alkyl or the like; R5 represents phenyl or the like; R6 represents a hydrogen atom or the like; m is an integer of from 0 to 2; p is an integer of from 1 to 4; and q is an integer of from 1 to 5, or a pharmaceutical acceptable salt thereof, and a DGAT 1 inhibitor comprising the compound.

Abstract: An electrode for a power storage device with less deterioration due to charge and discharge and a power storage device using the electrode are provided. In the electrode for a power storage device and the power storage device, a region including a metal element which functions as a catalyst is selectively provided over a current collector, and then, an active material layer is formed. By selectively providing the region including the metal element, a whisker can be effectively generated in the active material layer over the current collector, and the whisker generation region can be controlled. Accordingly, the discharge capacity can be increased and the cycle characteristics can be improved.

Abstract: A coreless and brushless direct-current motor includes an armature coil wound without core and formed in the shape of a saddle; an outside rotor magnet formed by a permanent magnet, the outside rotor magnet being provided at an outside of the armature coil in the shape of a cylinder so as to face the armature coil, the outside rotor magnet being rotated by the magnetic field; an inside rotor magnet formed by a permanent magnet, the inside rotor magnet being provided in the shape of a cylinder at an inside of the armature coil so that the inside rotor magnet has a pole opposite to the outside rotor magnet and a rotational shaft is independently provided; an output shaft connected to the inside rotor magnet; and a sealing part of a barrier structure which sealing part partitions the armature coil and the outside rotor magnet to an outside of the inside rotor magnet and seals the armature coil and the outside rotor magnet.

Abstract: When acute hepatitis progresses to fulminant hepatitis, a large amount of hepatic cells are rapidly broken, and as a result, the prognosis is seriously worsened. Thus, it is important to prognose the progress of acute hepatitis into fulminant hepatitis at an early stage and quickly start an appropriate treatment therefor. Although the prognosis of progress into fulminant hepatitis becomes possible owing to recent advances in test methods and diagnostic techniques, there has been no appropriate prophylactic/therapeutic agent for fulminant hepatitis. The present invention provides a therapeutic agent for acute hepatitis or a prophylactic/therapeutic agent for fulminant hepatitis with little side effect. The problem of the invention was solved by using a composition containing apolipoprotein A-II.

Abstract: The present invention relates to compounds, which are useful for treatment and/or prevention of diabetes mellitus, diabetes mellitus complications or obesity, since the compounds have glucokinase-activating effects, and are presented in Formula (I): wherein R1 represents a carbamoyl group; R2 represents a lower alkyl group; both of X1 and X2 represent CH, or any one of X1 and X2 represents a nitrogen atom and the other represents CH; a group of represents a group selected from the group consisting of a pyridinyl, a pyrazinyl, a pyrazolyl, a thiadiazolyl, a triazolyl, an isoxazolyl and a thiazolyl group; and k is zero or 1, or relates to pharmaceutically acceptable salts thereof.

Abstract: An amorphous semiconductor layer is formed over a first single crystal semiconductor layer provided over a glass substrate or a plastic substrate with an insulating layer therebetween. The amorphous semiconductor layer is formed by a CVD method at a deposition temperature of higher than or equal to 100° C. and lower than or equal to 275° C. with use of a silane-based gas not diluted. Heat treatment is performed so that the amorphous semiconductor layer solid-phase epitaxially grows. In such a manner, an SOI substrate including a thick single crystal semiconductor layer is manufactured.

Abstract: The present invention realizes an efficient superscalar instruction issue and low power consumption at an instruction set including instructions with prefixes. An instruction fetch unit is adopted which determines whether an instruction code is of a prefix code or an instruction code other than it, and outputs the result of determination and the 16-bit instruction code. Along with it, decoders each of which decodes the instruction code, based on the result of determination, and decoders each of which decodes the prefix code, are disposed separately. Further, a prefix is supplied to each decoder prior to a fixed-length instruction code like 16 bits modified with it. A fixed-length instruction code following the prefix code is supplied to each decoder of the same pipeline as the decoder for the prefix code.

Abstract: To provide a liquid crystal display, in which substrates are strongly fixed with an even cell gap to exhibit an excellent display quality. The liquid crystal display includes a spacer side substrate and a counter substrate in which the spacer side substrate and the counter substrate oppose a first alignment layer and a second alignment layer to each other; and in which a liquid crystal layer having a liquid crystal material are held between the spacer side substrate and the counter substrate. Additionally, a reactive alignment layer having a curable resin is formed on at least one of the first alignment layer and the second alignment layer, and the spacer side substrate and the counter substrate are bonded to each other with the reactive alignment layer interposed therebetween.

Abstract: Disclosed is a compound represented by formula (I) or a pharmaceutically acceptable salt thereof, which has an agonistic activity on GPR120 and is therefore useful for the treatment of diabetes, obesity or hyperlipemia. [In formula (I), the A represents a phenyl group which may be substituted by a lower alkoxy group or the like; the 13 represents a bivalent group produced by removing two hydrogen atoms from a benzene ring which may be substituted by a halogen atom or the like; X represents a lower alkylene group having 2 to 4 carbon atoms in its main chain or the like, wherein a carbon atom constituting the main chain may be substituted by an oxygen atom or the like; and Y represents a hydrogen atom or the like.

Abstract: A high-quality oxide film which is free from a pinhole and surface roughing caused by anodic oxidation and which has surface smoothness on a surface of a material to be treated containing a metal as a principal component. An electrolyte solution which is used for forming an oxide film on a surface of a material to be treated containing a metal as a principal component by anodic oxidation, the electrolyte solution containing a non-aqueous solvent containing an alcoholic hydroxyl group and having 4 or more carbon atoms as a main solvent. This non-aqueous solvent preferably contains two or more alcoholic hydroxyl groups and is especially preferably one or two or more members selected from the group consisting of diethylene glycol, triethylene glycol and polyethylene glycol. A method of forming an oxide film including a step of anodically oxidizing a material to be treated containing a metal as a principal component in this electrolyte solution.

Abstract: An outer race support plate to which torque of a pinion gear is transmitted from a ring gear via a one-way clutch and thus rotates a crankshaft is provided separately from a flywheel and is mounted to the crankshaft not via the flywheel. As a result, impact noise produced when the one-way clutch engages is not directly transmitted to the flywheel. Accordingly, noise radiation from the flywheel can be suppressed, thereby enabling noise to be reduced.

Abstract: In a semiconductor device having an LDMOSFET, a source electrode is at the back surface thereof. Therefore, to reduce electric resistance between a source contact region in the top surface and the source electrode at the back surface, a poly-silicon buried plug is provided which extends from the upper surface into a P+-type substrate through a P-type epitaxial layer, and is heavily doped with boron. Dislocation occurs in a mono-crystalline silicon region around the poly-silicon buried plug to induce a leakage failure. The semiconductor device has a silicon-based plug extending through the boundary surface between first and second semiconductor layers having different impurity concentrations. At least the inside of the plug is a poly-crystalline region. Of the surface of the poly-crystalline region, the portions located on both sides of the foregoing boundary surface in adjacent relation thereto are each covered with a solid-phase epitaxial region.

Abstract: Provided is a method for cleaning a semiconductor device substrate, which is excellent in removability and re-adhesion-preventing properties of contaminations of fine particles or organic matter, metal contamination and combined contamination of organic matter and metal, which are adhered to a substrate surface, and which can highly clean the substrate surface without corroding it even when an intense ultrasonic wave is not applied. It is a method for cleaning a semiconductor device substrate, the method comprising cleaning the semiconductor device substrate while applying an ultrasonic wave having an intensity of 0.2 W or more and 1.

Abstract: A method and apparatus for developing microcomputer-based systems. A controller model having at least one parameter is simulated and, similarly, a plant model having at least one parameter and controlled by the controller model is simulated. A user interface then has access to the parameters of the controller model and plant model and optionally suspends the execution of the controller model and plant model in response to a trigger event. The user interface determines the status of the controller model parameters and/or plant model parameters at the time of the trigger without altering the controller model parameters or plant model parameters or the program code of the controller model.

Abstract: The data processor having CPUs each capable of accessing memories enables the processing of a memory error according to the processing mode of the data processor. The CPUs have a memory, and each include a first storing unit capable of storing CPU-identifying information which enables identification of CPU having accessed the memory. At the time of occurrence of a soft error owing to access to the memory, the CPU, having the memory, stores the CPU-identifying information for identifying the CPU having accessed the corresponding memory in the first storing unit, and notifies the interrupt controller of occurrence of a soft error of the memory. After having received an interruption of the memory soft error from the interrupt controller, the CPU uses information stored in the first storing unit to identify the CPU having made the access, and performs the error processing.