Abstract: The semiconductor device includes a nonvolatile memory, having a memory array containing 1-bit twin cells, each composed of electrically rewritable first and second storage devices, the first and second storage devices holding binary data according to difference of their threshold voltages, and having different retention characteristics depending on difference of the binary data thereof; a read circuit for differentially amplifying complementary data output from the first and second storage devices of the twin cell selected for read, and judging information stored in the twin cell; and a control circuit. Two memory cells constituting a twin cell are arranged to hold different data. Therefore, even when the retention performance of one memory cell deteriorates, the difference between data held by the two memory cells can be maintained. Hence, differential amplification of such difference enables acquisition of proper stored information.

Abstract: A positioning unit is configured to position an optical element in a barrel, and includes a holder configured to hold the optical element, a first intermediate plate mounted with the holder, a second intermediate plate configured to support the first intermediate plate, a plurality of drivers each configured to drive the second intermediate plate with respect to a plurality of axes, and each fixed inside of the barrel, and a positioning part configured to position the first intermediate plate relative to the second intermediate plate, wherein the second intermediate plate couples ends of the plurality of drivers with one another.

Abstract: Vertical MISFETs are formed over drive MISFETs and transfer MISFETs. The vertical MISFETs comprise rectangular pillar laminated bodies each formed by laminating a lower semiconductor layer (drain), an intermediate semiconductor layer, and an upper semiconductor layer (source), and gate electrodes formed on corresponding side walls of the laminated bodies with gate insulating films interposed therebetween. In each vertical MISFET, the lower semiconductor layer constitutes a drain, the intermediate semiconductor layer constitutes a substrate (channel region), and the upper semiconductor layer constitutes a source. The lower semiconductor layer, the intermediate semiconductor layer and the upper semiconductor layer are each comprised of a silicon film. The lower semiconductor layer and the upper semiconductor layer are doped with a p type and constituted of a p type silicon film.

Abstract: The semiconductor integrated circuit device includes: a first latch which can hold an output signal of the X decoder and transfer the signal to the word driver in a post stage subsequent to the X decoder; a second latch which can hold an output signal of the Y decoder and transfer the signal to the column multiplexer in the post stage subsequent to the Y decoder; and a third latch which can hold an output signal of the sense amplifier and transfer the signal to the output buffer in the post stage subsequent to the sense amplifier. The structure makes it possible to pipeline-control a series of processes for reading data stored in the non-volatile semiconductor memory, and enables low-latency access even with access requests from CPUs conflicting.

Abstract: An optical element positioning apparatus of the present invention includes a moving unit including an optical element 2, a drive mechanism 100 configured to drive the moving unit, a position measuring sensor 130 configured to measure a position of the optical element 2, and an optical element controller 10 configured to control the drive mechanism 100 based on a measurement result by the position measuring sensor 130. An incident position (p point) at which a principal ray of a central field enters the optical element 2 is displaced from an optical axis of an optical system including the optical element 2, and the position measuring sensor 130 measures the incident position in an optical axis direction.

Abstract: Vertical MISFETs are formed over drive MISFETs and transfer MISFETs. The vertical MISFETs comprise rectangular pillar laminated bodies each formed by laminating a lower semiconductor layer (drain), an intermediate semiconductor layer, and an upper semiconductor layer (source), and gate electrodes formed on corresponding side walls of the laminated bodies with gate insulating films interposed therebetween. In each vertical MISFET, the lower semiconductor layer constitutes a drain, the intermediate semiconductor layer constitutes a substrate (channel region), and the upper semiconductor layer constitutes a source. The lower semiconductor layer, the intermediate semiconductor layer and the upper semiconductor layer are each comprised of a silicon film. The lower semiconductor layer and the upper semiconductor layer are doped with a p type and constituted of a p type silicon film.

Abstract: A driving system for driving an optical element in a first direction includes a linear actuator for producing a displacement in a second direction perpendicular to the first direction, a displacement picking unit being extendable in a third direction, perpendicular to both of the first and second directions, for picking out a displacement of the linear actuator, and a direction converting unit disposed at the third-direction side of the linear actuator, for converting a direction of the displacement picked out by the displacement picking unit.

Abstract: The apparatus includes a holder holding an optical element, a back plate supporting the optical element via the holder, a mechanism moving the optical element in a six-degree-of-freedom, a base plate supporting the back plate via the mechanism, and six displacement sensors disposed on the base plate and measuring displacement amounts of different points on the optical element. The displacement sensors includes three ones measuring them in a first direction, one measuring it in a second direction, and two ones measuring them in a third direction. The apparatus further includes a transformation processor transforming the six measured displacement amounts into displacement amounts of the optical element in the six-degree-of-freedom, a calibration processor calibrating the transformed displacement amounts, and a controller outputting command values to the displacing mechanism based on differences between the calibrated displacement amounts and target displacement amounts of the optical element.

Abstract: A driving system for driving an optical element in a first direction. The system includes a linear actuator for producing a displacement in a second direction perpendicular to the first direction, a displacement picking unit being extendable in a third second direction, perpendicular to both of the first and second directions, for picking out a displacement of the linear actuator, and a direction converting unit, disposed at the third-direction second-direction side of the linear actuator, for converting a direction of the displacement picked out by the displacement picking unit into a third direction, perpendicular to both the first and second directions.

Abstract: A method for the prevention and/or treatment of a disease caused by hypertension comprising administering to a mammal, such as a human, in need thereof pharmaceutically effective amounts of (5-methyl-2-oxo-1,3-dioxolen-4-yl)methyl 4-(1-hydroxy-1-methylethyl)-2-propyl-1-[[2?-(1H-tetrazol-5-yl(biphenyl-4-yl]methyl]imidazol-5-carboxylate and a calcium channel blocker which is amlodipine or amlodipine besylate.

Abstract: A holding apparatus configured to hold an optical element includes a supporting member configured to support the optical element, a cylindrical member configured to support the supporting member, a plurality of sensors configured to detect a position of the optical element and the supporting member, and a drive unit configured to drive the supporting member based on outputs from the plurality of sensors. The supporting member includes a plurality of projection portions that contact the optical element. A direction of each vertex of a polygon formed by connecting the plurality of projection portions with a straight line substantially coincides with a direction of each vertex of a polygon formed by connecting the plurality of sensors with a straight line.

Abstract: An optical-element driving mechanism is configured to drive an optical element, and includes a uniaxial driving mechanism that includes a linear actuator that drives in a first direction, and a link mechanism that converts a displacement in a direction orthogonal to the first direction. The linear actuator is level with the link mechanism in an optical-axis direction. The uniaxial driving mechanism is arranged in order of the link mechanism and the linear actuator in a radial direction when viewed form an optical axis of the optical element.

Abstract: Methods for the prevention and/or treatment of arteriosclerosis and restenosis following percutaneous coronary intervention or sudden death and for the inhibition of vascular smooth muscle cells, neointima formulation of blood vessels or vascular remodeling comprising administering to a mammal, such as a human, in need thereof pharmaceutically effective amounts of an angiotensin II receptor antagonist which is (5-methyl-2-oxo-1,3-dioxolen-4-yl)methyl 4-(1-hydroxy-1-methylethyl)-2-propyl-1-[[2?-(1H-tetrazol-5-yl)biphenyl-4-yl]methyl]imidazol-5-carboxylate and a calcium channel blocker which is amlodipine or amlodipine besylate.

Abstract: Methods for the prophylaxis and/or treatment of arteriosclerosis, hypertension, restenosis, heart diseases, renal diseases and cerebrovascular diseases by administering a pharmaceutical composition comprising the following active ingredients: (A) an angiotensin II receptor antagonist selected from the group consisting of a compound having a formula (I), a pharmacologically acceptable ester thereof and a pharmacologically acceptable salt thereof (for example, olmesartan medoxomil), the compound having the following formula: and (B) a calcium channel blocker selected from the group consisting of a 1,4-dihydropyridine compound and a pharmacologically acceptable salt thereof (for example, azelnidipine), wherein the composition does not include the combination of olmesartan medoxomil and amlodipine or amlodipine besylate.

Abstract: The degree of integration and the number of rewriting of a semiconductor device having a nonvolatile memory element are improved. A first MONOS nonvolatile-memory-element and a second MONOS nonvolatile-memory-element having a large gate width compared with the first MONOS nonvolatile-memory-element are mounted together on the same substrate, and the first MONOS nonvolatile-memory-element is used for storing program data which is scarcely rewritten, and the second MONOS nonvolatile-memory-element is used for storing processed data which is frequently rewritten.

Abstract: The semiconductor device includes a nonvolatile memory, having a memory array containing 1-bit twin cells, each composed of electrically rewritable first and second storage devices, the first and second storage devices holding binary data according to difference of their threshold voltages, and having different retention characteristics depending on difference of the binary data thereof; a read circuit for differentially amplifying complementary data output from the first and second storage devices of the twin cell selected for read, and judging information stored in the twin cell; and a control circuit. Two memory cells constituting a twin cell are arranged to hold different data. Therefore, even when the retention performance of one memory cell deteriorates, the difference between data held by the two memory cells can be maintained. Hence, differential amplification of such difference enables acquisition of proper stored information.

Abstract: The degree of integration and the number of rewriting of a semiconductor device having a nonvolatile memory element are improved. A first MONOS nonvolatile-memory-element and a second MONOS nonvolatile-memory-element having a large gate width compared with the first MONOS nonvolatile-memory-element are mounted together on the same substrate, and the first MONOS nonvolatile-memory-element is used for storing program data which is scarcely rewritten, and the second MONOS nonvolatile-memory-element is used for storing processed data which is frequently rewritten.

Abstract: An anti-vibration apparatus includes a target object, a reference object, a measuring device which measures the position of the target object relative to the reference object, a driving mechanism to drive the target object based on the measurement result obtained by the measuring device, a Lorentz's force actuator which supports the reference object, and a power supply device which supplies a constant current to the Lorentz's force actuator. The actuator which supports the reference object uses a Lorentz's force actuator or an actuator which supports the reference object by the pressure of a gas.

Abstract: The present invention provides a positioning apparatus capable of performing six-axis micro adjustment of an optical element in an exposure apparatus with high accuracy, and the exposure apparatus. The positioning apparatus of the present invention includes a first measurement unit for measuring a position/inclination of a moving part having an optical element while being kept from contact with the moving part, and a driving unit capable of driving the moving part in directions of six axes with respect to a fixed part while being kept from contact with the moving part, based on the result of measurement by the first measurement unit.

Abstract: An exposure apparatus includes a projection optical system for projecting a pattern of a reticle onto a substrate to be exposed, via a liquid that is filled in a space between the substrate and a final lens that is closest to the substrate, a movement restricting part for restricting a movement of the liquid by forming a interval between the movement restricting part and the substrate, the interval is smaller than a interval of the space, and a moving part for moving the movement restricting part so that the interval between the movement restricting part and the substrate increases.