Abstract: A magnetic head device with high joint strength in an arm and a suspension is provided. The magnetic head device comprises an arm, a suspension overlapping with a leading end part of the arm, a slider located at a leading end part of the suspension, and a joint part that is located between the leading end part of the arm and the suspension and that joins the arm and the suspension, while the joint part includes Sn.

Abstract: A magnetic head device which has strong joint strength in an arm and a suspension and high accuracy of a size and a shape is provided. The magnetic head device comprises an arm, a suspension overlapping with a leading end part of the arm, a slider located at a leading end part of the suspension, and a first joint part that is placed between the leading end part of the arm and the suspension and that joins the arm and the suspension, the first joint part including Sn or a resin adhesive.

Abstract: An electronic component module according to the present invention is provided with an electronic component, a sealing resin that seals the electronic component, and a metal film that covers a surface of the sealing resin. The sealing resin contains filler of oxide particles. Part of the filler in the sealing resin is exposed to the surface of the sealing resin. At least the part of the filler exposed to the surface of the sealing resin includes a crack that extends from an exposed surface of the filler into an inner portion. The crack is filled with at least one metal that constitutes the metal film.

Abstract: A preferred terminal structure comprises a base material; an electrode formed on the base material; an insulating covering layer formed on the base material and on the electrode and having an opening exposing at least part of the electrode; an under bump metal layer containing Ni, formed in a region in the opening on the electrode so that an upper surface of the metal layer is at a position lower than an upper surface of the insulating covering layer in a peripheral edge portion of the opening; and a dome-shaped bump containing Sn and Ti, formed in a region in the opening on the under bump metal layer, wherein an end portion of a boundary between the under bump metal layer and the bump is in contact with an inner wall of the opening portion in the insulating covering layer.

Abstract: A preferred terminal structure comprises a base material; an electrode formed on the base material; an insulating covering layer formed on the base material and on the electrode and having an opening exposing at least part of the electrode; an under bump metal layer containing Ni, formed in a region in the opening on the electrode so that an upper surface of the metal layer is at a position lower than an upper surface of the insulating covering layer in a peripheral edge portion of the opening; and a dome-shaped bump containing Sn and Ti, formed in a region in the opening on the under bump metal layer, wherein an end portion of a boundary between the under bump metal layer and the bump is in contact with an inner wall of the opening portion in the insulating covering layer.

Abstract: A coating for a conductor, the coating having a layered structure of a palladium layer. The palladium layer has a crystal plane whose orientation rate is 65% or more, which means 65% or more of the crystal planes of the palladium layer are aligned to this crystal plane. Preferably the crystal plane whose orientation rate is 65% or more in the coating is the (111) plane or (200) plane.

Abstract: An electronic component module according to the present invention is provided with an electronic component, a sealing resin that seals the electronic component, and a metal film that covers a surface of the sealing resin. The sealing resin contains filler of oxide particles. Part of the filler in the sealing resin is exposed to the surface of the sealing resin. At least the part of the filler exposed to the surface of the sealing resin includes a crack that extends from an exposed surface of the filler into an inner portion. The crack is filled with at least one metal that constitutes the metal film.

Abstract: The present invention relates to a terminal structure comprising: a base material 10; an external electrode 20 formed on the base material; an insulating coating layer 30 formed on the base material and on the electrode and having an opening exposing at least part of the electrode; an under-bump metal layer 70 filling the opening and covering part of the insulating coating layer; and a dome-shaped bump 85 covering the under-bump metal layer, wherein in a cross section along a lamination direction, a height Hbm at which the bump has a maximum diameter (Lbm) is lower than a maximum height Hu of the under-bump metal layer.

Abstract: A preferred terminal structure comprises a base material; an electrode formed on the base material; an insulating covering layer formed on the base material and on the electrode and having an opening exposing at least part of the electrode; an under bump metal layer containing Ni, filling the opening on the electrode; and a dome-shaped bump containing Sn and Ti, covering the under bump metal layer, wherein at least part of the under bump metal layer has a portion sandwiched between the external electrode and the insulating covering layer.

Abstract: A coating having a layered structure including a palladium layer is provided to a conductor. The highly stable palladium layer is amorphous and contains phosphorus in a concentration ranging from 7.3% by mass to 11.0% by mass. An electronic component may include the conductor coated with the coating. The conductor coated with the coating has superior corrosion resistance and superior reliability in electrical connection with external apparatuses.

Abstract: The electronic device includes a terminal structure and a printed circuit board including the terminal structure. The terminal structure includes a solder-joint conductor region placed on a wiring conductor, an intermediate layer contacting with the conductor region, and a solder region contacting with the intermediate layer. The intermediate layer includes an intermetallic compound including tin and at least one of copper and nickel as principal components. When the indentation elastic modulus of the conductor region is E1 and the indentation elastic modulus of the intermediate layer is E2, the ratio of E1 to E2 is equal to or more than 0.8 and equal to or less than 1.5.

Abstract: A preferred terminal structure comprises a base material; an electrode formed on the base material; an insulating covering layer formed on the base material and on the electrode and having an opening exposing at least part of the electrode; an under bump metal layer containing Ni, filling the opening on the electrode; and a dome-shaped bump containing Sn and Ti, covering the under bump metal layer, wherein at least part of the under bump metal layer has a portion sandwiched between the external electrode and the insulating covering layer.

Abstract: The present invention relates to a terminal structure comprising; a base material 10; an external electrode 20 formed on the base material; an insulating coating layer 30 formed on the base material and on the electrode and having an opening exposing at least part of the electrode; an under-bump metal layer 70 filling the opening and covering part of the insulating coating layer; and a dome-shaped bump 85 covering the under-bump metal layer, wherein in a cross section along a lamination direction, the under-bump metal layer has a convex shape toward the bump, and the thickness Tu0 of the under-bump metal layer at a center of the opening is equal to or greater than the thickness Tu1 of the under-bump metal layer at an end portion of the opening.

Abstract: The present invention relates to a terminal structure comprising: a base material 10; an external electrode 20 formed on the base material; an insulating coating layer 30 formed on the base material and on the electrode and having an opening exposing at least part of the electrode; an under-bump metal layer 70 filling the opening and covering part of the insulating coating layer; and a dome-shaped bump 85 covering the under-bump metal layer, wherein in a cross section along a lamination direction, a height Hbm at which the bump has a maximum diameter (Lbm) is lower than a maximum height Hu of the under-bump metal layer.

Abstract: A preferred terminal structure comprises a base material; an electrode formed on the base material; an insulating covering layer formed on the base material and on the electrode and having an opening exposing at least part of the electrode; an under bump metal layer containing Ni, formed in a region in the opening on the electrode so that an upper surface of the metal layer is at a position lower than an upper surface of the insulating covering layer in a peripheral edge portion of the opening; and a dome-shaped bump containing Sn and Ti, formed in a region in the opening on the under bump metal layer, wherein an end portion of a boundary between the under bump metal layer and the bump is in contact with an inner wall of the opening portion in the insulating covering layer.

Abstract: A tin electrolytic plating solution comprises a suitably selected nonionic surfactant having a branched alkyl group. The nonionic surfactant is contained either alone, or with a suitably selected cationic surfactant and/or a suitably selected alkyl imidazole. The invention also provides a tin electrolytic plating method using such a tin electrolytic plating solution, and a tin electroplated electronic part obtained by such a method.

Abstract: A tin electrolytic plating solution comprises a suitably selected nonionic surfactant having a branched alkyl group. The nonionic surfactant is contained either alone, or with a suitably selected cationic surfactant and/or a suitably selected alkyl imidazole. The invention also provides a tin electrolytic plating method using such a tin electrolytic plating solution, and a tin electroplated electronic part obtained by such a method.