Patents by Inventor Makoto Suyama
Makoto Suyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240018081Abstract: An object of the present disclosure is to provide a method for producing a fluorinated organic compound, the method being capable of removing a sulfur-containing substance to a high degree, or provide a composition containing a fluorinated organic compound with a low content of a sulfur-containing substance. The present disclosure relates to a method for producing a fluorinated organic compound (pf), the method comprising: [A] reaction step A of fluorinating an organic sulfur compound (ss) with a fluorinating agent to obtain a composition (?) containing a fluorinated organic compound (pf); and [B] post-treatment step B of reacting the composition (?) with a nucleophile at a temperature of 40° C. or higher.Type: ApplicationFiled: September 25, 2023Publication date: January 18, 2024Applicant: DAIKIN INDUSTRIES, LTD.Inventors: Atsushi SHIRAI, Yoshichika KUROKI, Yuusuke ETOU, Masayuki KISHIMOTO, Takashi NAMIKAWA, Sumi ISHIHARA, Makoto SUYAMA, Kenji ADACHI, Yosuke KISHIKAWA
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Patent number: 11864282Abstract: The present disclosure provides a light emitting element driving device. The light emitting element driving device includes a constant current circuit and a current detection unit. The constant current circuit includes: a first transistor including a first end, a second end and a control end connected to an external terminal; a current setting resistance connected to the second end of the first transistor; and a drive amplifier including a first input end connected to a first node to which the first transistor and the current setting resistance are connected, a second input end to which a current set voltage is applied, and an output end connected to the control end of the first transistor. The current detection unit generates a current detection signal based on a feedback voltage generated in the first node.Type: GrantFiled: August 19, 2022Date of Patent: January 2, 2024Assignee: Rohm Co., Ltd.Inventors: Makoto Suyama, Koji Katsura, Toshiro Okubo
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Publication number: 20230090191Abstract: The present disclosure provides a light emitting element driving device. The light emitting element driving device includes a constant current circuit and a current detection unit. The constant current circuit includes: a first transistor including a first end, a second end and a control end connected to an external terminal; a current setting resistance connected to the second end of the first transistor; and a drive amplifier including a first input end connected to a first node to which the first transistor and the current setting resistance are connected, a second input end to which a current set voltage is applied, and an output end connected to the control end of the first transistor. The current detection unit generates a current detection signal based on a feedback voltage generated in the first node.Type: ApplicationFiled: August 19, 2022Publication date: March 23, 2023Inventors: Makoto SUYAMA, Koji KATSURA, Toshiro OKUBO
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Patent number: 11596215Abstract: Disclosed are shoulder belt sliding-down preventing method, and a related preventing tool, shoulder belt, and bag. The belt-shaped neck hanging element is connected to a belt at positions separated from each other via connecting members. A loop-shaped space is thereby formed between the belt body and the neck-hanging element. The head passes through this space, and the neck hanging element contacts the side of the neck. In operation, the connecting member is removed and held with one hand, the belt body is hung on the shoulder, the connecting member is passed around the back of the neck, the neck hanging element is hung around the neck, and the connecting member is engaged again with the belt body. The belt body of the shoulder bag can hang on the shoulder and the neck hanging element can be wound around the neck, thereby preventing the belt body from sliding down the shoulder.Type: GrantFiled: February 14, 2019Date of Patent: March 7, 2023Inventor: Makoto Suyama
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Publication number: 20210000236Abstract: Disclosed are shoulder belt sliding-down preventing method, and a related preventing tool, shoulder belt, and bag. The belt-shaped neck hanging element is connected to a belt at positions separated from each other via connecting members. A loop-shaped space is thereby formed between the belt body and the neck-hanging element. The head passes through this space, and the neck hanging element contacts the side of the neck. In operation, the connecting member is removed and held with one hand, the belt body is hung on the shoulder, the connecting member is passed around the back of the neck, the neck hanging element is hung around the neck, and the connecting member is engaged again with the belt body. The belt body of the shoulder bag can hang on the shoulder and the neck hanging element can be wound around the neck, thereby preventing the belt body from sliding down the shoulder.Type: ApplicationFiled: February 14, 2019Publication date: January 7, 2021Inventor: Makoto SUYAMA
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Patent number: 9972776Abstract: According to one embodiment of the present invention, there is provided a plasma processing method for forming a pattern of a mask on a laminated film of a magnetic film and a metal oxide film, and the plasma processing method includes: plasma etching the magnetic film in a chamber; and after the plasma etching, plasma cleaning the chamber, wherein the plasma cleaning performs first plasma cleaning of plasma cleaning using a gas mixture of chlorine element-containing gas and boron trichloride gas, and after the first plasma cleaning, second plasma cleaning of removing boron remaining in the chamber.Type: GrantFiled: September 9, 2016Date of Patent: May 15, 2018Assignee: Hitachi High-Technologies CorporationsInventors: Makoto Suyama, Naohiro Yamamoto, Masato Ishimaru, Hidenori Toyooka, Norihiro Hosaka
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Publication number: 20170194561Abstract: According to one embodiment of the present invention, there is provided a plasma processing method for forming a pattern of a mask on a laminated film of a magnetic film and a metal oxide film, and the plasma processing method includes: plasma etching the magnetic film in a chamber; and after the plasma etching, plasma cleaning the chamber, wherein the plasma cleaning performs first plasma cleaning of plasma cleaning using a gas mixture of chlorine element-containing gas and boron trichloride gas, and after the first plasma cleaning, second plasma cleaning of removing boron remaining in the chamber.Type: ApplicationFiled: September 9, 2016Publication date: July 6, 2017Inventors: Makoto SUYAMA, Naohiro YAMAMOTO, Masato ISHIMARU, Hidenori TOYOOKA, Norihiro HOSAKA
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Patent number: 9680090Abstract: In a plasma etching method of plasma-etching a sample which has a first magnetic film, a second magnetic film disposed above the first magnetic film, a metal oxide film disposed between the first magnetic film and the second magnetic film, a second metal film disposed over the second magnetic film and forming an upper electrode, and a first metal film disposed below the first magnetic film and forming a lower electrode, the plasma etching method includes the steps of: a first process for etching the first magnetic film, the metal oxide film, and the second magnetic film by using carbon monoxide gas; and a second process for etching the sample by using mixed gas of hydrogen gas and inactive gas after the first process. In this case, the first metal film is a film containing therein tantalum.Type: GrantFiled: January 14, 2016Date of Patent: June 13, 2017Assignee: Hitachi High-Technologies CorporationInventors: Daisuke Fujita, Makoto Suyama, Naohiro Yamamoto, Masato Ishimaru, Kentaro Yamada
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Patent number: 9506154Abstract: A plasma processing method is provided for reducing dimensions of a film to be etched from patterned dimensions, and is capable of reducing dimensions without causing deformation or collapse of the film to be etched. A plasma processing method for trimming a tantalum film by plasma etching using a resist, an antireflective film disposed under the resist, and a mask film disposed under the antireflective film, includes the steps of trimming the antireflective film and the mask film by plasma etching with the resist as a mask; removing the resist and the antireflective film subjected to the trimming, by plasma; and trimming the tantalum film by plasma etching with a mask film obtained after the resist and the antireflective film subjected to the trimming are removed by plasma, as a mask.Type: GrantFiled: November 19, 2014Date of Patent: November 29, 2016Assignee: Hitachi High-Technologies CorporationInventors: Masato Ishimaru, Takeshi Shimada, Makoto Suyama, Takahiro Abe
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Patent number: 9449842Abstract: A plasma etching method for plasma etching a film to be etched to a size smaller than a prescribed size using a mask patterned to the prescribed size performs etching on the film to be etched to the size smaller than the prescribed size while forming a protection film on side walls of the film to be etched.Type: GrantFiled: July 31, 2014Date of Patent: September 20, 2016Assignee: Hitachi High-Technologies CorporationInventors: Masato Ishimaru, Takahiro Abe, Makoto Suyama, Takeshi Shimada
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Patent number: 9378758Abstract: The present invention provides, in a plasma etching method for plasma-etching a magnetic film, a plasma etching method that allows a desired etching depth to be obtained regardless of the opening size of a mask. The present invention is, in a plasma etching method for plasma-etching a magnetic film by using a tantalum film as a mask, characterized by including: a first process to plasma-etch the magnetic film to a desired depth by using a mixed gas of an ammonia gas and a helium gas; and a second process, after the first process, to plasma-etch the magnetic film etched to the prescribed depth by using a mixed gas of an ammonia gas and a gas containing the oxygen element or a mixed gas of an ammonia gas and a gas containing a hydroxyl group.Type: GrantFiled: April 9, 2014Date of Patent: June 28, 2016Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Takahiro Abe, Naohiro Yamamoto, Kentaro Yamada, Makoto Suyama, Daisuke Fujita
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Publication number: 20160138170Abstract: A plasma processing method is provided for reducing dimensions of a film to be etched from patterned dimensions, and is capable of reducing dimensions without causing deformation or collapse of the film to be etched. A plasma processing method for trimming a tantalum film by plasma etching using a resist, an antireflective film disposed under the resist, and a mask film disposed under the antireflective film, includes the steps of trimming the antireflective film and the mask film by plasma etching with the resist as a mask; removing the resist and the antireflective film subjected to the trimming, by plasma; and trimming the tantalum film by plasma etching with a mask film obtained after the resist and the antireflective film subjected to the trimming are removed by plasma, as a mask.Type: ApplicationFiled: November 19, 2014Publication date: May 19, 2016Inventors: Masato ISHIMARU, Takeshi SHIMADA, Makoto SUYAMA, Takahiro ABE
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Publication number: 20160133834Abstract: In a plasma etching method of plasma-etching a sample which has a first magnetic film, a second magnetic film disposed above the first magnetic film, a metal oxide film disposed between the first magnetic film and the second magnetic film, a second metal film disposed over the second magnetic film and forming an upper electrode, and a first metal film disposed below the first magnetic film and forming a lower electrode, the plasma etching method includes the steps of: a first process for etching the first magnetic film, the metal oxide film, and the second magnetic film by using carbon monoxide gas; and a second process for etching the sample by using mixed gas of hydrogen gas and inactive gas after the first process. In this case, the first metal film is a film containing therein tantalum.Type: ApplicationFiled: January 14, 2016Publication date: May 12, 2016Inventors: Daisuke Fujita, Makoto Suyama, Naohiro Yamamoto, Masato Ishimaru, Kentaro Yamada
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Patent number: 9281470Abstract: In a plasma processing method for plasma-etching magnetic layer by using a plasma processing device including a processing chamber in which a sample is plasma-processed, a dielectric window to seal an upper part of the processing chamber hermetically, an inductive coupling antenna disposed above the dielectric window, a radio-frequency power source to supply radio-frequency electric power to the inductive coupling antenna and a Faraday shield disposed between the inductive coupling antenna and the dielectric window, a deposit layer is formed on the plasma-etched magnetic layer by plasma processing while applying radio-frequency voltage to the Faraday shield after the magnetic layer is plasma-etched.Type: GrantFiled: July 31, 2014Date of Patent: March 8, 2016Assignee: Hitachi High-Technologies CorporationInventors: Takahiro Abe, Naohiro Yamamoto, Makoto Suyama, Masato Ishimaru
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Patent number: 9269892Abstract: In a plasma etching method of plasma-etching a sample which has a first magnetic film, a second magnetic film disposed above the first magnetic film, a metal oxide film disposed between the first magnetic film and the second magnetic film, a second metal film disposed over the second magnetic film and forming an upper electrode, and a first metal film disposed below the first magnetic film and forming a lower electrode, the plasma etching method includes the steps of: a first process for etching the first magnetic film, the metal oxide film, and the second magnetic film by using carbon monoxide gas; and a second process for etching the sample by using mixed gas of hydrogen gas and inactive gas after the first process. In this case, the first metal film is a film containing therein tantalum.Type: GrantFiled: February 14, 2014Date of Patent: February 23, 2016Assignee: Hitachi High-Technologies CorporationInventors: Daisuke Fujita, Makoto Suyama, Naohiro Yamamoto, Masato Ishimaru, Kentaro Yamada
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Publication number: 20150349245Abstract: In a plasma processing method for plasma-etching magnetic layer by using a plasma processing device including a processing chamber in which a sample is plasma-processed, a dielectric window to seal an upper part of the processing chamber hermetically, an inductive coupling antenna disposed above the dielectric window, a radio-frequency power source to supply radio-frequency electric power to the inductive coupling antenna and a Faraday shield disposed between the inductive coupling antenna and the dielectric window, a deposit layer is formed on the plasma-etched magnetic layer by plasma processing while applying radio-frequency voltage to the Faraday shield after the magnetic layer is plasma-etched.Type: ApplicationFiled: July 31, 2014Publication date: December 3, 2015Inventors: Takahiro Abe, Naohiro Yamamoto, Makoto Suyama, Masato Ishimaru
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Publication number: 20150194315Abstract: A plasma etching method for plasma etching a film to be etched to a size smaller than a prescribed size using a mask patterned to the prescribed size performs etching on the film to be etched to the size smaller than the prescribed size while forming a protection film on side walls of the film to be etched.Type: ApplicationFiled: July 31, 2014Publication date: July 9, 2015Inventors: Masato Ishimaru, Takahiro Abe, Makoto Suyama, Takeshi Shimada
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Patent number: 9017564Abstract: A plasma etching method performs plasma etching on a sample, which has laminated films containing a variable layer of a magnetic film, a barrier layer of an insulating material, and a fixed layer of a magnetic film, using a hard mask, which includes at least one of a Ta film and a TiN film. The plasma etching method includes a first step of etching the laminated films using N2 gas; and a second step of etching the laminated films after the first step using mixed gas of N2 gas and gas containing carbon elements.Type: GrantFiled: February 7, 2013Date of Patent: April 28, 2015Assignee: Hitachi High-Technologies CorporationInventors: Atsushi Yoshida, Naohiro Yamamoto, Makoto Suyama, Kentaro Yamada, Daisuke Fujita
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Publication number: 20150017741Abstract: In a plasma etching method of plasma-etching a sample which has a first magnetic film, a second magnetic film disposed above the first magnetic film, a metal oxide film disposed between the first magnetic film and the second magnetic film, a second metal film disposed over the second magnetic film and forming an upper electrode, and a first metal film disposed below the first magnetic film and forming a lower electrode, the plasma etching method includes the steps of: a first process for etching the first magnetic film, the metal oxide film, and the second magnetic film by using carbon monoxide gas; and a second process for etching the sample by using mixed gas of hydrogen gas and inactive gas after the first process. In this case, the first metal film is a film containing therein tantalum.Type: ApplicationFiled: February 14, 2014Publication date: January 15, 2015Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Daisuke Fujita, Makoto Suyama, Naohiro Yamamoto, Masato Ishimaru, Kentaro Yamada
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Publication number: 20140217061Abstract: The present invention provides, in a plasma etching method for plasma-etching a magnetic film, a plasma etching method that allows a desired etching depth to be obtained regardless of the opening size of a mask. The present invention is, in a plasma etching method for plasma-etching a magnetic film by using a tantalum film as a mask, characterized by including: a first process to plasma-etch the magnetic film to a desired depth by using a mixed gas of an ammonia gas and a helium gas; and a second process, after the first process, to plasma-etch the magnetic film etched to the prescribed depth by using a mixed gas of an ammonia gas and a gas containing the oxygen element or a mixed gas of an ammonia gas and a gas containing a hydroxyl group.Type: ApplicationFiled: April 9, 2014Publication date: August 7, 2014Applicant: Hitachi High-Technologies CorporationInventors: Takahiro Abe, Naohiro Yamamoto, Kentaro Yamada, Makoto Suyama, Daisuke Fujita