Abstract: A plasma etching method performs plasma etching on a sample, which has laminated films containing a variable layer of a magnetic film, a barrier layer of an insulating material, and a fixed layer of a magnetic film, using a hard mask, which includes at least one of a Ta film and a TiN film. The plasma etching method includes a first step of etching the laminated films using N2 gas; and a second step of etching the laminated films after the first step using mixed gas of N2 gas and gas containing carbon elements.

Abstract: The present invention provides, in a plasma etching method for plasma-etching a magnetic film, a plasma etching method that allows a desired etching depth to be obtained regardless of the opening size of a mask. The present invention is, in a plasma etching method for plasma-etching a magnetic film by using a tantalum film as a mask, characterized by including: a first process to plasma-etch the magnetic film to a desired depth by using a mixed gas of an ammonia gas and a helium gas; and a second process, after the first process, to plasma-etch the magnetic film etched to the prescribed depth by using a mixed gas of an ammonia gas and a gas containing the oxygen element or a mixed gas of an ammonia gas and a gas containing a hydroxyl group.

Abstract: The present invention provides a method for stably generating cleaning plasma regardless of a condition of CO-containing plasma. When a magnetic film formed on a wafer 802 to be etched is processed with the CO-containing plasma which is generated by applying a source electric power to a CO-containing gas containing elements of C and O, which has been introduced into a vacuum chamber 801, to convert the CO-containing gas into a plasma state, the method includes: applying predetermined processing to the magnetic film formed on the wafer 802 to be etched by using the CO-containing plasma; then introducing a cleaning gas into the vacuum chamber in a state of applying the source electric power 806 to the antenna; and then stopping the introduction of the CO-containing gas into the vacuum chamber to thereby generate the cleaning plasma with the use of a predetermined cleaning gas.

Abstract: Disclosed is a plasma processing method that excels in mass production consistency as it suppresses the flaking of a reaction product deposited on a portion outside the effective range of a Faraday shield in a vacuum vessel. The plasma processing method, which plasma-processes a sample having a layer made of an etch-resistant material by using a plasma processing apparatus having a discharger and a processor, includes a first step of performing an aging process that is to be performed before etching the sample, a second step of performing etching by plasma-processing the layer that is made of an etch-resistant material and formed on the sample, a third step of stabilizing a film deposited on the inner wall of a chamber forming the processor by performing plasma processing after the second step, and an additional step of repeating the second step and the third step.

Abstract: A drainage tube retainer 1 as an endoscopic treatment instrument includes a guide catheter 10 for slidably supporting a drainage tube 6 retained in a live organ through a channel; a pusher tube 11 disposed in the exterior of the guide catheter 10 and slidably supported by the guide catheter 10; and a pusher cap 13 provided to the pusher tube 11 for positioning the pusher tube 11 relative to the endoscope so that a direction in which the pusher tube 11 is inserted through the channel substantially coincides with a direction in which the guide catheter 10 is retracted from the pusher tube 11.

Abstract: An etching solution which contains hydrogen fluoride (HF) and exhibits an etching rate ratio: etching rate for a boron-glass film (BSG) or boron-phosphorus-glass film (BPSG)/etching rate for a thermally oxidized film (THOX) of 10 or more at 25° C.

Abstract: A catheter according to an aspect of the present invention comprises a flexible tubular insert section having, in the outer surface of the distal end side of the insert section, a plurality of notches arranged in the longitudinal direction of the insert section on one side of a plane passing through the longitudinal axis of the insert section, an operating wire passed through the insert section and capable of advancing or retreating to bend the distal end side of the insert section having the notches, and a reinforcing tube put on the insert section to cover substantially the overall length of the whole region of the insert section, except the distal end side of the insert section on which the notches are formed, and to restrain longitudinal compression of the insert section.

Abstract: A catheter according to an aspect of the present invention comprises a flexible tubular insert section having, in the outer surface of the distal end side of the insert section, a plurality of notches arranged in the longitudinal direction of the insert section on one side of a plane passing through the longitudinal axis of the insert section, an operating wire passed through the insert section and capable of advancing or retreating to bend the distal end side of the insert section having the notches, and a reinforcing tube put on the insert section to cover substantially the overall length of the whole region of the insert section, except the distal end side of the insert section on which the notches are formed, and to restrain longitudinal compression of the insert section.

Abstract: A method for producing an etching or cleaning solution comprising (1) at least one member selected from the group consisting of fluoride salts and bifluoride salts formed from at least one member selected from the group consisting of ammonia, hydroxylamines, aliphatic amines, aromatic amines, aliphatic quaternary ammoniums and aromatic quaternary ammoniums with hydrofluoric acid; (2) at least one heteroatom-containing organic solvent; and (3) water, the method comprising the steps of: Step 1: mixing an aqueous hydrofluoric acid solution with at least one heteroatom-containing organic solvent, and Step 2: mixing the mixture obtained in Step 1 with at least one member selected from the group consisting of ammonia, hydroxylamines, aliphatic amines, aromatic amines, aliphatic quaternary ammoniums, aromatic quaternary ammoniums, and fluorides thereof.

Abstract: An etching solution which exhibits etching rates for both of a thermally oxidized film (THOX) and a boron-phosphorus-glass film (BPSG) of 100 ?/min or less at 25° C., and an etching rate ratio: etching rate for BPSG/etching rate for a thermally oxidized film (THOX) of 1.5 or less.

Abstract: An etching solution which exhibits etching rates for both of a thermally oxidized film (THOX) and a boron-phosphorus-glass film (BPSG) of 10O ?/min or less at 25° C., and an etching rate ratio:etching rate for BPSG/etching rate for a thermally oxidized film (THOX) of 1.5 or less.

Abstract: A catheter according to an aspect of the present invention comprises a flexible tubular insert section having, in the outer surface of the distal end side of the insert section, a plurality of notches arranged in the longitudinal direction of the insert section on one side of a plane passing through the longitudinal axis of the insert section, an operating wire passed through the insert section and capable of advancing or retreating to bend the distal end side of the insert section having the notches, and a reinforcing tube put on the insert section to cover substantially the overall length of the whole region of the insert section, except the distal end side of the insert section on which the notches are formed, and to restrain longitudinal compression of the insert section.

Abstract: The present invention provides a wafer treating solution in which at least one of C.sub.n H.sub.2n+1 ph(SO.sub.3 M)Oph(SO.sub.3 M) wherein ph is a phenylene group, n is 5 to 20, and M is a hydrogen or salt; C.sub.n H.sub.2n+1 phO(CH.sub.2 CH.sub.2 O)mSO.sub.3 M wherein ph is a phenylene group, n is 5 to 20, m is 0 to 20, and M is a hydrogen or salt; and C.sub.n H.sub.2n+1 O(CH.sub.2 CH.sub.2 O)mSO.sub.3 M wherein n is 5 to 20, m is 0 to 20, and M is a hydrogen or salt, is dissolved in 0.1 to 1000 ppm into a 20 to 60 wt % of hydrogen fluoride (HF), and the remainder is water (100 wt % in total), and a method for preparing a low concentration of wafer treating solution by adding water, H.sub.2 O.sub.2, HNO.sub.3, CH.sub.3 COOH, NH.sub.4 F or the like, into the above solution. The present invention also provides a wafer treating solution in which at least one of surfactants represented by C.sub.n H.sub.2n+1 ph(SO.sub.3 M)Oph(SO.sub.

Abstract: The present invention provides a wafer treating solution in which at least one of C.sub.n H.sub.2n+1 ph(SO.sub.3 M)Oph(SO.sub.3 M) wherein ph is a phenylene group, n is 5 to 20, and M is a hydrogen or salt; C.sub.n H.sub.2n+1 phO(CH.sub.2 CH.sub.2 O)mSO.sub.3 M wherein ph is a phenylene group, n is 5 to 20, m is 0 to 20, and M is a hydrogen or salt; and C.sub.n H.sub.2n+1 O(CH.sub.2 CH.sub.2 O)mSO.sub.3 M wherein n is 5 to 20, m is 0 to 20, and M is a hydrogen or salt, is dissolved in 0.1 to 1000 ppm into a 20 to 60 wt % of hydrogen fluoride (HF), and the remainder is water (100 wt % in total), and a method for preparing a low concentration of wafer treating solution by adding water, H.sub.2 O.sub.2, HNO.sub.3, CH.sub.3 COOH, NH.sub.4 F or the like, into the above solution. The present invention also provides a wafer treating solution in which at least one of surfactants represented by C.sub.n H.sub.2n+1 ph(SO.sub.3 M)Oph(SO.sub.