Abstract: Methods and apparatus for selective one-step nitridation of semiconductor substrates is provided. Nitrogen is selectively incorporated in silicon regions of a semiconductor substrate having silicon regions and silicon oxide regions by use of a selective nitridation process. Nitrogen containing radicals may be directed toward the substrate by forming a nitrogen containing plasma and filtering or removing ions from the plasma, or a thermal nitridation process using selective precursors may be performed. A remote plasma generator may be coupled to a processing chamber, optionally including one or more ion filters, showerheads, and radical distributors, or an in situ plasma may be generated and one or more ion filters or shields disposed in the chamber between the plasma generation zone and the substrate support.

Abstract: Methods and apparatus for selective one-step nitridation of semiconductor substrates is provided. Nitrogen is selectively incorporated in silicon regions of a semiconductor substrate having silicon regions and silicon oxide regions by use of a selective nitridation process. Nitrogen containing radicals may be directed toward the substrate by forming a nitrogen containing plasma and filtering or removing ions from the plasma, or a thermal nitridation process using selective precursors may be performed. A remote plasma generator may be coupled to a processing chamber, optionally including one or more ion filters, showerheads, and radical distributors, or an in situ plasma may be generated and one or more ion filters or shields disposed in the chamber between the plasma generation zone and the substrate support.

Abstract: Disclosed are apparatus and methods for processing a substrate. The substrate having a feature with a layer thereon is exposed to an inductively coupled plasma which forms a substantially conformal layer.

Abstract: Provided are methods post deposition treatment of films comprising SiN. Certain methods pertain to providing a film comprising SiN; and exposing the film to an inductively coupled plasma, capacitively coupled plasma or a microwave plasma to provide a treated film with a modulated film stress and/or wet etch rate in dilute HF. Certain other methods comprise depositing a PEALD SiN film followed by exposure to a plasma nitridation process or a UV treatment to provide a treated film.

Abstract: Methods for preparing a substrate for a subsequent film formation process are described. Methods for preparing a substrate for a subsequent film formation process, without immersion in an aqueous solution, are also described. A process is described that includes disposing a substrate into a process chamber, the substrate having a thermal oxide surface with substantially no reactive surface terminations. The thermal oxide surface is exposed to a partial pressure of water below the saturated vapor pressure at a temperature of the substrate to convert the dense thermal oxide with substantially no reactive surface terminations to a surface with hydroxyl surface terminations. This can occur in the presence of a Lewis base such as ammonia.

Abstract: Methods and apparatus for selective one-step nitridation of semiconductor substrates is provided. Nitrogen is selectively incorporated in silicon regions of a semiconductor substrate having silicon regions and silicon oxide regions by use of a selective nitridation process. Nitrogen containing radicals may be directed toward the substrate by forming a nitrogen containing plasma and filtering or removing ions from the plasma, or a thermal nitridation process using selective precursors may be performed. A remote plasma generator may be coupled to a processing chamber, optionally including one or more ion filters, showerheads, and radical distributors, or an in situ plasma may be generated and one or more ion filters or shields disposed in the chamber between the plasma generation zone and the substrate support.

Abstract: Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method of forming a nitrogen-containing layer may include placing a substrate having a first layer disposed thereon on a substrate support of a process chamber; heating the substrate to a temperature of at least about 250 degrees Celsius; and exposing the first layer to a radio frequency (RF) plasma formed from a process gas consisting essentially of ammonia (NH3) and an inert gas while maintaining the process chamber at a pressure of about 10 mTorr to about 40 mTorr to transform at least an upper portion of the first layer into a nitrogen-containing layer.

Abstract: Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method includes placing a substrate having a first layer disposed thereon on a substrate support of a process chamber; heating the substrate to a temperature of at least about 250 degrees Celsius; and exposing the first layer to a radio frequency (RF) plasma formed from a process gas comprising nitrogen while maintaining the process chamber at a pressure of about 10 mTorr to about 40 mTorr to transform at least an upper portion of the first layer into a nitrogen-containing layer. In some embodiments, the process gas includes ammonia (NH3).

Abstract: Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method includes exposing a first layer of a substrate to a plasma formed from a process gas comprising predominantly a mixture of ammonia (NH3) and a noble gas, wherein ammonia is about 0.5 to about 15 percent of the process gas; and maintaining the process chamber at a pressure of about 10 mTorr to about 80 mTorr while exposing the first layer to the plasma to transform at least an upper portion of the first layer into a nitrogen-containing layer.

Abstract: Methods for preparing a substrate for a subsequent film formation process are described. Methods for preparing a substrate for a subsequent film formation process, without immersion in an aqueous solution, are also described. A process is described that includes disposing a substrate into a process chamber, the substrate having a thermal oxide surface with substantially no reactive surface terminations. The thermal oxide surface is exposed to a partial pressure of water above the saturated vapor pressure at a temperature of the substrate to convert the dense thermal oxide with substantially no reactive surface terminations to a surface with hydroxyl surface terminations. This can occur in the presence of a Lewis base such as ammonia.

Abstract: Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method of forming a nitrogen-containing layer may include placing a substrate having a first layer disposed thereon on a substrate support of a process chamber; heating the substrate to a temperature of at least about 250 degrees Celsius; and exposing the first layer to a radio frequency (RF) plasma formed from a process gas consisting essentially of ammonia (NH3) and an inert gas while maintaining the process chamber at a pressure of about 10 mTorr to about 40 mTorr to transform at least an upper portion of the first layer into a nitrogen-containing layer.

Abstract: Methods and apparatus for selective one-step nitridation of semiconductor substrates is provided. Nitrogen is selectively incorporated in silicon regions of a semiconductor substrate having silicon regions and silicon oxide regions by use of a selective nitridation process. Nitrogen containing radicals may be directed toward the substrate by forming a nitrogen containing plasma and filtering or removing ions from the plasma, or a thermal nitridation process using selective precursors may be performed. A remote plasma generator may be coupled to a processing chamber, optionally including one or more ion filters, showerheads, and radical distributors, or an in situ plasma may be generated and one or more ion filters or shields disposed in the chamber between the plasma generation zone and the substrate support.

Abstract: Oxide growth of a gate dielectric layer that occurs between processes used in the fabrication of a gate dielectric structure can be reduced. The reduction in oxide growth can be achieved by maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth of the gate dielectric layer between at least two sequential process steps used in the fabrication the gate dielectric structure. Maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth also improves the uniformity of nitrogen implanted in the gate dielectric.

Abstract: Oxide growth of a gate dielectric layer that occurs between processes used in the fabrication of a gate dielectric structure can be reduced. The reduction in oxide growth can be achieved by maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth of the gate dielectric layer between at least two sequential process steps used in the fabrication the gate dielectric structure. Maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth also improves the uniformity of nitrogen implanted in the gate dielectric.

Abstract: Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method includes placing a substrate having a first layer disposed thereon on a substrate support of a process chamber; heating the substrate to a temperature of at least about 250 degrees Celsius; and exposing the first layer to a radio frequency (RF) plasma formed from a process gas comprising nitrogen while maintaining the process chamber at a pressure of about 10 mTorr to about 40 mTorr to transform at least an upper portion of the first layer into a nitrogen-containing layer. In some embodiments, the process gas includes ammonia (NH3).

Abstract: A method of reducing threshold voltage shift of a MOSFET transistor resulting after temperature and voltage stress, and an integrated circuit device fabricated according to the method. The method includes the steps of forming a nitrided dielectric layer on a semiconductor substrate, and subjecting the nitrided dielectric layer to an anneal at low pressure.

Abstract: A semiconductor device includes source/drain regions formed in a substrate and having a concentration of nitrogen of at least about 5E18 cm?3. A gate dielectric is located over the substrate and between the source/drain regions. Gate sidewall spacers are located over said source/drain regions. A nitrogen-doped electrode including polysilicon is located over the gate dielectric. The electrode has a concentration of nitrogen therein greater than the concentration of nitrogen in the source/drain regions.

Abstract: CMOS gate dielectric made of high-k metal silicates by passivating a silicon surface with nitrogen compounds prior to high-k dielectric deposition. Optionally, a silicon dioxide monolayer may be preserved at the interface.

Abstract: The present invention provides a method for fabricating a dual gate semiconductor device. In one aspect, the method comprises forming a nitridated, high voltage gate dielectric layer over a semiconductor substrate, patterning a photoresist over the nitridated, high voltage gate dielectric layer to expose the nitridated, high voltage dielectric within a low voltage region, wherein the patterning leaves an accelerant residue on the exposed nitridated, high voltage gate dielectric layer, and subjecting the exposed nitridated, high voltage dielectric to a high vacuum to remove the accelerant residue.

Abstract: The present invention provides a method for fabricating a dual gate semiconductor device. In one aspect, the method comprises forming a nitridated, high voltage gate dielectric layer over a semiconductor substrate, patterning a photoresist over the nitridated, high voltage gate dielectric layer to expose the nitridated, high voltage dielectric within a low voltage region wherein the patterning leaves an accelerant residue on the exposed nitridated, high voltage gate dielectric layer. The method further includes subjecting the exposed nitridated, high voltage dielectric to a plasma to remove the accelerant residue.