Abstract: There is provided a semiconductor device including: a circuit region formed on one surface of a semiconductor substrate; a connection portion disposed at the one surface, the connection portion covering the circuit region, being electrically connected to the circuit region, and being used to connect with an exterior device; an annular wire formed at the one surface so as to surround the circuit region; a first protective film covering the annular wire, the first protective film being formed between the connection portion and a peripheral edge portion of the semiconductor substrate; and a second protective film formed at a predetermined partial region on the connection portion.

Abstract: A method and apparatus for producing core-shell type metal nanoparticles which are excellent in productivity are provided, in particular, the present invention provides a method of production of core-shell type metal nanoparticles including (a) a step of introducing a solution of a salt of a first metal to a first flow path of a flow type reaction apparatus and applying plasma to the solution of the salt of the first metal in the first flow path to obtain a solution which contains metal nanoparticles of the first metal and (b) a step of introducing a solution of a salt of a second metal to a second flow path of the flow type reaction apparatus, making it merge with the solution which contains metal nanoparticles of the first metal to obtain a mixed solution, and applying plasma to the mixed solution to cover the metal nanoparticles of the first metal by the second metal.

Abstract: Provided is a temperature-responsive hygroscopic material having a hygroscopic property that varies widely according to temperature variation and a method for producing the temperature-responsive hygroscopic material. The temperature-responsive hygroscopic material includes a mesoporous body having an average pore diameter of 2 nm to less than 50 nm and a temperature sensitive molecule chemically bonded with the mesoporous body inside a pore of the mesoporous body. The method includes a step of causing, in a solvent including an activator and a coupling agent, a coupling reaction of: a mesoporous body having an average diameter of 2 nm to less than 50 nm and having a functional group on a surface thereof; and a temperature sensitive molecule having a functional group which can undergo a coupling reaction with the functional group on the surface of the mesoporous body.

Abstract: A method of production of core/shell type nanoparticles includes the following steps: a first step of applying a first power to cause the generation of the plasma so as to selectively cause the precipitation of a first metal so as to form nanoparticles as cores and a second step of applying a second power which is larger than the first power to cause the generation of the plasma so as to cause the precipitation of a second metal which has a smaller oxidation reduction potential than the first metal on the core surface so as to form shells which are comprised of the second metal which cover the cores which are comprised of the first metal.

Abstract: Provided is a temperature-responsive hygroscopic material having a hygroscopic property that varies widely according to temperature variation and a method for producing the temperature-responsive hygroscopic material. The temperature-responsive hygroscopic material includes a mesoporous body having an average pore diameter of 2 nm to less than 50 nm and a temperature sensitive molecule chemically bonded with the mesoporous body inside a pore of the mesoporous body. The method includes a step of causing, in a solvent including an activator and a coupling agent, a coupling reaction of: a mesoporous body having an average diameter of 2 nm to less than 50 nm and having a functional group on a surface thereof; and a temperature sensitive molecule having a functional group which can undergo a coupling reaction with the functional group on the surface of the mesoporous body.

Abstract: Provided is a water vapor adsorption-desorption material in which a substance having a LCST is uniformly retained inside pores of a mesoporous body, which can reduce energy required for regeneration, and a method for measuring LCST behavior capable of measuring LCST behavior of an ionic liquid used in the water vapor adsorption-desorption material without errors. The water vapor adsorption-desorption material includes a mesoporous body and an ionic liquid retained inside pores of the mesoporous body, the ionic liquid exhibiting LCST behavior, and the method for measuring LCST behavior of an ionic liquid used for a water vapor adsorption-desorption material, the method including detecting a change of hydration/dehydration state of a mixture of the ionic liquid and water as electric signals, by means of AC impedance measurement.

Abstract: A method and apparatus for producing core-shell type metal nanoparticles which are excellent in productivity are provided, in particular, the present invention provides a method of production of core-shell type metal nanoparticles including (a) a step of introducing a solution of a salt of a first metal to a first flow path of a flow type reaction apparatus and applying plasma to the solution of the salt of the first metal in the first flow path to obtain a solution which contains metal nanoparticles of the first metal and (b) a step of introducing a solution of a salt of a second metal to a second flow path of the flow type reaction apparatus, making it merge with the solution which contains metal nanoparticles of the first metal to obtain a mixed solution, and applying plasma to the mixed solution to cover the metal nanoparticles of the first metal by the second metal.

Abstract: A method of production of core/shell type nanoparticles includes the following steps: a first step of applying a first power to cause the generation of the plasma so as to selectively cause the precipitation of a first metal so as to form nanoparticles as cores and a second step of applying a second power which is larger than the first power to cause the generation of the plasma so as to cause the precipitation of a second metal which has a smaller oxidation reduction potential than the first metal on the core surface so as to form shells which are comprised of the second metal which cover the cores which are comprised of the first metal.

Abstract: A particulate inorganic oxide containing aluminum oxide, a metal oxide forming no composite oxide with aluminum oxide, and an additional element including at least one of a rare-earth element and an alkali earth element, the inorganic oxide containing a secondary particle formed by aggregating primary particles; wherein at least a part of the secondary particle includes a plurality of first primary particles, each having a particle size of 100 nm or less, containing aluminum oxide and the additional element, and a plurality of second primary particles, each having a particle size of 100 nm or less, containing the metal oxide and the additional element; wherein at least a part of the first and second primary particles has a surface concentrated region where the additional element has a locally increased content in a surface layer part thereof.

Abstract: The catalyst carrier in accordance with the present invention is a catalyst carrier comprising a support containing an oxide and an element in group 3A of the periodic table, and a coating part covering at least a part of a surface of the support; wherein the coating part contains an element in group 3A of the periodic table; and wherein the element in group 3A contained in the coating part has a concentration higher than that of the element in group 3A contained in the support. In this case, even when a catalyst in which rhodium is supported by the catalyst carrier is used for a long time in a high temperature environment, the grain growth of rhodium particles can be suppressed, and the catalyst can fully be prevented from lowering its activity.

Abstract: The hydrogen storage alloy has, as a main phase thereof, a bcc structure phase having a composition represented by TixCryVzXw wherein 3/2?y/x?3/1, 50?z?75 mol %, 0?w?5 mol %, and x+y+z+w=100 mol %, and X represents any one or more selected from Al, Si, and Fe. The hydrogen storage device is a device using the alloy. The preparation process of a hydrogen storage alloy includes the steps of: melting/casting raw materials mixed to give the composition represented by TixCryVzXw; heat-treating an ingot obtained in the melting/casting step; and subjecting the heat-treated ingot to a hydrogen storing/releasing treatment at least once to activate the ingot.

Abstract: A catalyst for purifying exhaust gases includes a carrier substrate and a catalyst layer which is carried on the carrier substrate and contains a noble metal, a porous oxide and an additional oxide containing at least one selected from the group consisting of Ni, Bi, Sn, Fe, Co, Cu and Zn. Only a downstream section of the carrier substrate, which is located on a downstream side of an exhaust gas stream contains the additional oxide, whereas an upstream section of the carrier substrate does not contain the additional oxide. With this arrangement, in the upstream section of the carrier substrate, the noble metal and the additional oxide do not exist together so that the noble metal is not deteriorated with the additional oxide. As a result, in the upstream section, the purification performance as a three-way catalyst is favorably achieved, thereby restraining the emission of H2S while maintaining the three-way performance.

Abstract: A catalyst for purifying exhaust gases includes a carrier substrate and a catalyst layer which is carried on the carrier substrate and contains a noble metal, a porous oxide and an addition oxide containing at least one selected from the group consisting of Ni, Bi, Sn, Fe, Co, Cu and Zn. Only a downstream section of the carrier substrate, which is located on a downstream side of an exhaust gas stream contains the addition oxide, whereas an upstream section of the carrier substrate does not contain the addition oxide. With this arrangement, in the upstream section of the carrier substrate, the noble metal and the addition oxide do not exist together so that the noble metal is not deteriorated with the addition oxide. As a result, in the upstream section, the purification performance as a three-way catalyst is favorably achieved, thereby restraining the emission of H2S while maintaining the three-way performance.

Abstract: The catalyst carrier in accordance with the present invention is a catalyst carrier comprising a support containing an oxide and an element in group 3A of the periodic table, and a coating part covering at least a part of a surface of the support; wherein the coating part contains an element in group 3A of the periodic table; and wherein the element in group 3A contained in the coating part has a concentration higher than that of the element in group 3A contained in the support. In this case, even when a catalyst in which rhodium is supported by the catalyst carrier is used for a long time in a high temperature environment, the grain growth of rhodium particles can be suppressed, and the catalyst can fully be prevented from lowering its activity.

Abstract: A particulate inorganic oxide containing aluminum oxide, a metal oxide forming no composite oxide with aluminum oxide, and an additional element including at least one of a rare-earth element and an alkali earth element, the inorganic oxide containing a secondary particle formed by aggregating primary particles; wherein at least a part of the secondary particle includes a plurality of first primary particles, each having a particle size of 100 nm or less, containing aluminum oxide and the additional element, and a plurality of second primary particles, each having a particle size of 100 nm or less, containing the metal oxide and the additional element; wherein at least a part of the first and second primary particles has a surface concentrated region where the additional element has a locally increased content in a surface layer part thereof.

Abstract: A method for manufacturing a semiconductor device includes the steps of (a) forming a gate insulating film above a semiconductor substrate, (b) forming a first conductive film on the gate insulating film, (c) forming a first insulating film pattern on the first conductive film, (d) selectively forming a first impurity diffusion layer in the semiconductor substrate by ion implantation, (e) selectively forming a first selective insulating film that overlaps with the first impurity diffusion layer in a self-alignment fashion in the first conductive film, (f) forming a gate electrode that has a gate edge self-aligned with the first impurity diffusion layer and overlaps with the first impurity diffusion layer in a self-alignment fashion, and (g) selectively forming a second impurity diffusion layer that is located adjacent to the first impurity diffusion layer and is self-aligned with the gate edge by ion implantation.

Abstract: An apparatus for generating hydrogen gas in which hydrogen gas of a high purity is supplied to a hydrogen-utilizing device by using a decahydronaphthalene/naphthalene reaction. The apparatus includes a storage tank in which decahydronaphthalene is stored as a crude fuel, a reaction tank which has a catalyst and a heater for heating the catalyst and which causes dehydrogenation of decahydronaphthalene supplied from the storage tank to the heated catalyst, and a separation tank in which hydrogen-rich gas is separated out from naphthalene and hydrogen gas supplied from the reaction tank by using a hydrogen separation film and from which the separated hydrogen gas is discharged.

Abstract: The present invention provides a semiconductor device capable of improving a withstand voltage for a wire placed in the neighborhood of a contact. When the direction in which a wiring layer extends in the direction of a plane as viewed from the top of a substrate, is defined as a first direction, the direction orthogonal to the first direction on the plane is defined as a second direction, a radius of curvature of a conductive material layer closest to the opening is defined as R, a point where the conductive material layer and an end of the wiring layer intersect, is defined as X, a point where a straight line extending along the second direction from the point X intersects a straight line extending along the first direction through the center of the radius R of curvature of the conductive material layer, is defined as Y, and the distance between the points X and Y as viewed in the second direction is defined as A, the relations in COS−1(A/R)>46 are established.

Abstract: An apparatus for generating hydrogen gas in which hydrogen gas of a high purity is supplied to a hydrogen-utilizing device by using a decahydronaphthalene/naphthalene reaction. The apparatus includes a storage tank in which decahydronaphthalene is stored as a crude fuel, a reaction tank which has a catalyst and a heater for heating the catalyst and which causes dehydrogenation of decahydronaphthalene supplied from the storage tank to the heated catalyst, and a separation tank in which hydrogen-rich gas is separated out from naphthalene and hydrogen gas supplied from the reaction tank by using a hydrogen separation film and from which the separated hydrogen gas is discharged.

Abstract: There is provided a connection structure in which concentration of current in a connection portion of wirings, or of an element and a wiring is prevented. Three slits are formed in each of a first wiring and a second wiring, which extends in a direction perpendicular to a direction in which the first wiring extends, so that distances from the side of a cross internal angle gradually become longer. A portion of a current path is changed by these slits so as to limit current which can flow through the cross internal angle.