Abstract: Expansion promotion means (24) for more efficiently promoting the expansion of the depletion layer (19) than the electrically insulating film(14) having a suppressor electrode layer (20) buried therein is arranged between narrow portions (23b) of the suppressor electrode layer to control the expansion of the depletion layer (19), by which arrangement the spacing s between the narrow portions (23b) can be reduced without decreasing the field reducing effect of the field reduction means, which contains the suppressor electrode layer.

Abstract: Expansion promotion means (24) for more efficiently promoting the expansion of the depletion layer (19) than the electrically insulating film (14) having a suppressor electrode layer (20) buried therein is arranged between narrow portions (23b) of the suppressor electrode layer to control the expansion of the depletion layer (19), by which arrangement the spacing s between the narrow portions (23b) can be reduced without decreasing the field reducing effect of the field reduction means, which contains the suppressor electrode layer.

Abstract: The present invention relates to the measurement of gasoline volatility characteristics, and is directed in particular to the provision of an ultrasonic-type gasoline characteristic determination method and apparatus capable of determining the volatility characteristics with good accuracy by measuring the velocity of an ultrasonic wave in a gasoline containing alcohol or other additives and by compensating for deviations from a reference temperature, and a method for determining gasoline volatility characteristics by using an ultrasonic wave is provided, comprising the steps of transmitting an ultrasonic wave into a gasoline being measured, measuring the velocity of the ultrasonic wave in the gasoline, and determining the volatility characteristics of the gasoline from the velocity.

Abstract: According to the present invention, the state of a liquid fuel such as diesel fuel is made a supercritical state by raising the pressure and the temperature of the fuel above the critical pressure and temperature. Then, the fuel is injected from the fuel injection valve into the combustion chamber of the engine in the supercritical state. When the fuel in the supercritical state is injected into the combustion chamber of the engine, it forms an extremely fine uniform mist in the entire combustion chamber. Therefore, the combustion in the engine is largely improved.

Abstract: The present invention relates to the measurement of gasoline volatility characteristics, and is directed in particular to the provision of an ultrasonic-type gasoline characteristic determination method and apparatus capable of determining the volatility characteristics with good accuracy by measuring the velocity of an ultrasonic wave in a gasoline containing alcohol or other additives and by compensating for deviations from a reference temperature, and a method for determining gasoline volatility characteristics by using an ultrasonic wave is provided, comprising the steps of transmitting an ultrasonic wave into a gasoline being measured, measuring the velocity of the ultrasonic wave in the gasoline, and determining the volatility characteristics of the gasoline from the velocity.

Abstract: In a method for manufacturing a dielectric isolation substrate according to the present invention, during the process of pressing a semiconductor substrate (wafer), a dummy chip 103 is positioned toward the outside edge of the wafer with respect to the LSI chip 102, which is pressed into contact last, V-grooves 103A in the dummy chip 103 are formed to be deeper than V-grooves 102A in the LSI chip 102 so that voids can be effectively pushed into the dummy chip 103. Consequently, isolation of the LSI chip caused by voids can be prevented, thereby achieving an improvement in yield.

Abstract: Upper and lower metallizations are formed on a semiconductor substrate so as to prevent the upper metallization from being inferior wherein the semiconductor substrate includes a plurality of element forming regions, a plurality of isolation insulating regions for surrounding said element forming regions, and a supporter region extending between the isolation insulating regions. The lower metallization is formed on the supporter region and the upper metallization is formed to extend from one element forming region to another element forming regions while striding over the lower metallization not to cross the region where the lower metallization adjoins the isolation insulating regions. The lower metallization may be formed from one element forming region to another element forming regions while the upper metallization is formed to stride over the lower metallization.

Abstract: Upper and lower metallizations are formed on a semiconductor substrate so as to prevent the upper metallization from being inferior wherein the semiconductor substrate includes a plurality of element forming regions, a plurality of isolation insulating regions for surrounding said element forming regions, and a supporter region extending between the isolation insulating regions. The lower metallization is formed on the supporter region and the upper metallization is formed to extend from one element forming region to another element forming regions while striding over the lower metallization not to cross the region where the lower metallization adjoins the isolation insulating regions. The lower metallization may be formed from one element forming region to another element forming regions while the upper metallization is formed to stride over the lower metallization.