Abstract: An electrostatic chuck capable of widening a temperature range and reducing a variation in thermal conductivity between the electrostatic chuck and the flat substrate over time is provided. The chuck includes: a body that has an internal electrode for attracting a flat substrate by an electrostatic force provided therein, a plurality of protrusions formed on one surface of the body serving as an electrostatic attraction surface, and projections provided on the top surfaces of some or all of the plurality of protrusions. In the electrostatic chuck, a region of the top surface of each of the minute projections on which the flat substrate is loaded is referred to as a mounting surface, and the total area of the mounting surfaces of the minute projections is equal to or larger than 0.01% and equal to or smaller than 2% of the area of the electrostatic attraction surface.

Abstract: An electrostatic chuck device which enables to perform a plasma process having high in-plane uniformity to a plane-like sample by improving the in-plane uniformity of the electric field intensity in a plasma when applied to a plasma processing apparatus. Specifically disclosed is an electrostatic chuck device (21) including an electrostatic chuck section (22), a metal base section (23) serving as a high-frequency generating electrode, and an insulating plate (24). The electrostatic chuck section (22) is composed of a dielectric plate (31) whose top surface (31a) serves as a mounting surface on which a plate-like sample (W) is placed, a supporting plate (32), an electrostatic-adsorption inner electrode (25), and an insulating layer (33). The electrostatic-adsorption inner electrode (25) is made of a composite sintered body containing an insulating ceramic and silicon carbide, while having a volumetric resistance of not less than 1.0×10?1 ?cm but not more than 1.0×108 ?cm.

Abstract: An electrostatic chuck device includes an electrostatic chuck section including a substrate and a power supply terminal for applying a DC voltage to an electrostatic-adsorption inner electrode; and a metal base section fixed to the other main surface of the electrostatic chuck section. Here, a concave portion is formed in the main surface of the metal base section facing the electrostatic chuck section and a dielectric plate is fixed to the concave portion. The dielectric plate and the electrostatic chuck section are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric plate and the concave portion are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric constant of the insulating adhesive bonding layer is smaller than that of any one of the dielectric plate and the substrate.

Abstract: An electrostatic chuck device includes: an electrostatic chuck section including a substrate, which has a main surface serving as a mounting surface on which a plate-like sample is mounted and an electrostatic-adsorption inner electrode built therein, and a power supply terminal for applying a DC voltage to the electrostatic-adsorption inner electrode; and a metal base section that is fixed to the other main surface of the electrostatic chuck section so as to be incorporated into a body and that serves as a high frequency generating electrode. Here, the electrostatic-adsorption inner electrode has one or more electrode portions, and a resistance value of a distance between a point corresponding to a center axis of the substrate or a point closest to the center axis and a point most distant from the center axis among distances between two points in the electrode portion is in the range of 102? to 1010?.

Abstract: An electrostatic chuck device includes an electrostatic chuck section, a metal base section, and a dielectric plate. The electrostatic chuck section has a substrate, a main surface of which serves as a mounting surface for a plate-like sample, an electrostatic-adsorption inner electrode built in the substrate, and a power supply terminal for applying a DC voltage to the electrostatic-adsorption inner electrode. Here, a dielectric plate is fixed to a concave portion formed in the metal base section. The dielectric plate and the electrostatic chuck section are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric plate and the concave portion are adhesively bonded to each other with a conductive adhesive bonding layer interposed therebetween, the volume resistivity of which is 1.0×10?2?cm or less.

Abstract: An electrostatic chuck device includes: an electrostatic chuck section including a substrate, which has a main surface serving as a mounting surface on which a plate-like sample is mounted and an electrostatic-adsorption inner electrode built therein, and a power supply terminal for applying a DC voltage to the electrostatic-adsorption inner electrode; and a metal base section that is fixed to the other main surface of the electrostatic chuck section so as to be incorporated into a body and that serves as a high frequency generating electrode. Here, the volume resistivity of the electrostatic-adsorption inner electrode is in the range of 1.0×10?1?cm to 1.0×108 ?cm.

Abstract: An electrostatic chuck device includes an electrostatic chuck section including a substrate and a power supply terminal for applying a DC voltage to an electrostatic-adsorption inner electrode; and a metal base section fixed to the other main surface of the electrostatic chuck section. Here, a concave portion is formed in the main surface of the metal base section facing the electrostatic chuck section and a dielectric plate is fixed to the concave portion. The dielectric plate and the electrostatic chuck section are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric plate and the concave portion are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric constant of the insulating adhesive bonding layer is smaller than that of any one of the dielectric plate and the substrate.

Abstract: The invention provides an electrostatic chuck capable of widening a temperature range when the temperature of a flat substrate is controlled and reducing a variation in thermal conductivity between the electrostatic chuck and the flat substrate over time. According to an aspect of the invention, an electrostatic chuck includes: a body that has an internal electrode for attracting a flat substrate by an electrostatic force provided therein; a plurality of protrusions that are formed on one surface of the body, serving as an electrostatic attraction surface; and one or more minute projections that are provided on each of top surfaces of some or all of the plurality of protrusions. In the electrostatic chuck, a region of the top surface of each of the minute projections on which the flat substrate is loaded is referred to as a mounting surface, and the total area of the mounting surfaces of the minute projections is equal to or larger than 0.

Abstract: A bonding method is provided in which an electronic component is connected via bumps to a substrate and the electronic component is packaged on the substrate. A surface of the substrate that packages the electronic component, a surface of the electronic component that is connected to the substrate, and a surface of the bumps undergo plasma processing. Subsequently, the bumps are heated to a temperature lower than a melting point of the bumps, and the substrate and the electronic component are compression bonded via the bumps.

Abstract: An electrostatic chuck of the invention comprising; a first insulating member whose upper surface serves as a mounting surface on which a plate specimen is mounted, a second insulating member which is positioned facing a lower surface side of the first insulating member, and an internal electrode located between the first insulating member and the second insulating member, wherein the first insulating member is a composite ceramic having as its main constituents 1 wt % to 4 wt % of silicon carbide, and aluminum oxide, with a volume resistivity value in a temperature range of ?200° C. to 200° C., of 1×1014 ?cm to 1×1016 ?cm.

Abstract: There is provided a susceptor with a built-in electrode and a manufacturing method therefor, in which there is no danger of corrosive gas or plasma or the like penetrating to the inside of the substrate, which has excellent corrosion resistance and plasma resistance, in which nonconductivity under high temperatures is improved, and in which leakage current does not occur.

Abstract: A susceptor device comprises a susceptor base body, a temperature controlling section, an adhesive layer which attaches the susceptor base body and the temperature controlling section unitarily, an O-ring which is disposed near a peripheral section of the adhesive layer, a circular O-ring which is disposed on a bottom surface of the temperature controlling section, an O-ring supporting section which surrounds the temperature controlling section and compresses the O-rings on the temperature controlling section, and pushup screws which push up and fix the O-ring supporting section toward the temperature controlling section. By doing this, it is possible to protect the adhesive layer from an external environment. Also, it is possible to provide a susceptor device having a superior temperature controlling characteristics for the plate sample, operational stability, and durability.

Abstract: The invention provides a susceptor with a built-in plasma generation electrode that can make the throughput by a range of plasma processing of a plate specimen uniform, and that has excellent plasma resistance, thermal conductivity and durability, and a manufacturing method that can obtain this susceptor with a built-in plasma generation electrode easily and economically.

Abstract: The plastic film electrostatic adsorption apparatus of the present invention comprises an electrostatic adsorption electrode, an insulated dielectric layer that covers the electrostatic adsorption electrode and has a center line average roughness of an adsorption surface on which a plastic film is placed of 0.5 micrometers or less, and a power supply electrode that applies a voltage to the electrostatic adsorption electrode. According to this plastic film electrostatic adsorption apparatus, surface treatment can be performed even in a vacuum without requiring tedious work such as application or removal of adhesive. In addition, even if the plastic film expands and deforms due to heat treatment and plasma treatment performed during surface treatment, there is no occurrence of wrinkling, deformation or separation in the plastic film due to the difference in thermal expansion between the electrostatic adsorption surface and plastic film.

Abstract: A susceptor device comprises a susceptor base body, a temperature controlling section, an adhesive layer which attaches the susceptor base body and the temperature controlling section unitarily, an O-ring which is disposed near a peripheral section of the adhesive layer, a circular O-ring which is disposed on a bottom surface of the temperature controlling section, an O-ring supporting section which surrounds the temperature controlling section and compresses the O-rings on the temperature controlling section, and pushup screws which push up and fix the O-ring supporting section toward the temperature controlling section.

Abstract: A bonding method is provided in which an electronic component is connected via bumps to a substrate and the electronic component is packaged on the substrate. A surface of the substrate that packages the electronic component, a surface of the electronic component that is connected to the substrate, and a surface of the bumps undergo plasma processing. Subsequently, the bumps are heated to a temperature lower than a melting point of the bumps, and the substrate and the electronic component are compression bonded via the bumps.

Abstract: The present invention provides an electrostatic chuck that is able to completely prevent abnormal discharge that not only causes damage and destruction of the electrostatic chuck, but also causes damage of the fixed substrate as well as the generation of particles.

Abstract: An electrostatic chuck of the invention comprising; a first insulating member whose upper surface serves as a mounting surface on which a plate specimen is mounted, a second insulating member which is positioned facing a lower surface side of the first insulating member, and an internal electrode located between the first insulating member and the second insulating member, wherein the first insulating member is a composite ceramic having as its main constituents 1 wt % to 4 wt % of silicon carbide, and aluminum oxide, with a volume resistivity value in a temperature range of −200° C to 200° C, of 1×1014 &OHgr;cm to 1×1016 &OHgr;cm.

Abstract: The invention provides a susceptor with a built-in plasma generation electrode that can make the throughput by a range of plasma processing of a plate specimen uniform, and that has excellent plasma resistance, thermal conductivity and durability, and a manufacturing method that can obtain this susceptor with a built-in plasma generation electrode easily and economically.