Attracting plate of an electrostatic chuck for semiconductor manufacturing
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The broken line showing in the figures is for illustrative purposes only and forms no part of the claimed design.
Claims
The ornamental design for an attracting plate of an electrostatic chuck for semiconductor manufacturing, as shown and described.
| 3078565 | February 1963 | Sanders |
| 4502094 | February 26, 1985 | Lewin et al. |
| 6278600 | August 21, 2001 | Shamouilian et al. |
| 6628503 | September 30, 2003 | Sogard |
| 6721162 | April 13, 2004 | Weldon et al. |
| D546784 | July 17, 2007 | Hayashi |
| D548200 | August 7, 2007 | Hayashi |
| D548705 | August 14, 2007 | Hayashi |
| D553104 | October 16, 2007 | Oohashi et al. |
| 20020027762 | March 7, 2002 | Yamaguchi |
| 20020159217 | October 31, 2002 | Tsuruta et al. |
| 20040179323 | September 16, 2004 | Litman et al. |
| 20040190215 | September 30, 2004 | Weldon et al. |
| 20040218339 | November 4, 2004 | Nakamura |
| 20060164785 | July 27, 2006 | Pellegrin |
| 20060221539 | October 5, 2006 | Morita et al. |
Type: Grant
Filed: Feb 1, 2007
Date of Patent: Feb 24, 2009
Assignees: Tokyo Electron Limited (Tokyo), Sumitomo Osaka Cement Co., Ltd. (Tokyo)
Inventors: Yasuharu Sasaki (Nirasaki), Mamoru Kosakai (Tokyo)
Primary Examiner: Selina Sikder
Attorney: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
Application Number: 29/276,663