Abstract: A row redundancy circuit for use in a semiconductor memory device of the present invention having a fuse box independent of banks so as to improve repair efficiency. The row redundancy circuit includes a fuse box coupled to a row address and a bank address from an address buffer in which a fuse corresponding to an address of a word line to be repaired blows-out, a row fuse decoder for AND-operating two outputs of the fuse box, and a bank row address latch coupled to the output of the row fuse decoder for determining a location of a redundant word line in a block to be repaired.

Abstract: This invention is to provide a process for the hydrogenation of conjugated diene polymer in an inert organic solvent, said polymer being obtained by polymerization or copolymerization of a conjugated diene, which comprise effecting selective hydrogenation of unsaturated double bonds in the conjugated diene units of said conjugated diene polymer in the presence of catalyst represented by the following formula (I) ##STR1## wherein Cp is cyclopentadienyl (C.sub.5 H.sub. --);X.sub.1 and X.sub.2 are each independently a hologen atom, such as, chlorine or bromine;Y is carbon or nitrogen atom; andR.sub.1, R.sub.2 and R.sub.3 are each independently hydrogen atom or C.sub.1 -C.sub.4 lower alkyls.