Patents by Inventor Man-Lyun Ha
Man-Lyun Ha has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230290795Abstract: An image sensor includes a charge accumulation region having a first conductivity type and disposed in a substrate, a charge storage region having the first conductivity type and disposed in the substrate to be laterally spaced apart from the charge accumulation region, a transfer gate electrode disposed on a channel region between the charge accumulation region and the charge storage region to transfer a charge from the charge accumulation region to the charge storage region, a first well region having a second conductivity type and disposed below the charge storage region to inhibit a charge generated below the charge storage region from being moved to the charge storage region, and a second well region having the second conductivity type and disposed below a portion of one side of the first well region adjacent to a neighboring image cell.Type: ApplicationFiled: March 7, 2023Publication date: September 14, 2023Inventors: Man Lyun HA, Jong Min KIM, Dong Jun OH
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Publication number: 20230230998Abstract: A backside-illuminated image sensor and a method of manufacturing the same are disclosed. The backside-illuminated image sensor is capable of improving sensitivity by including a scattering layer in a substrate that may result in incident light having a path greater than the thickness of the substrate and, simultaneously, of additionally enhancing light sensitivity with respect to a specific wavelength or wavelength band of light passing through one of a plurality of different color filters by a varying depth or thickness of the scattering layer for each unit pixel in the image sensor.Type: ApplicationFiled: December 16, 2022Publication date: July 20, 2023Inventors: Woo Sung CHOI, Man Lyun HA
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Patent number: 11700463Abstract: An image sensor having a shield including, for example, a metal, is above an electrical charge storage element in a pixel region to block light incident toward the electrical charge storage element, thereby making it possible to reduce or prevent reading a charge value including leakage charge introduced to the electrical charge storage element, and thus adversely affecting an image result.Type: GrantFiled: May 11, 2020Date of Patent: July 11, 2023Assignee: DB HiTek, Co., Ltd.Inventors: Woo-Sung Choi, Man-Lyun Ha, Ju-Il Lee
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Patent number: 11664473Abstract: Provided are a single-photon avalanche diode (SPAD) pixel structure and a method of manufacturing the same. More particularly, provided are a SPAD pixel structure and a method of manufacturing the same, including an additional PN junction in a vertical or horizontal direction to increase photon detection efficiency and thus improve the sensitivity in an imaging device.Type: GrantFiled: June 10, 2022Date of Patent: May 30, 2023Assignee: DB HiTek, Co., Ltd.Inventors: Ju Hwan Jung, Byoung Soo Choi, Man Lyun Ha
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Patent number: 11640965Abstract: An image sensor includes a substrate having a first conductivity type, a first charge accumulation region disposed in the substrate and having a second conductivity type, a second charge accumulation region connected with the first charge accumulation region, having the second conductivity type and extending downward from an edge of the first charge accumulation region, a pinning region disposed on the first charge accumulation region and having the first conductivity type, a floating diffusion region spaced laterally from the pinning region, a channel region disposed between the pinning region and the floating diffusion region, and a gate structure disposed on the channel region.Type: GrantFiled: October 21, 2020Date of Patent: May 2, 2023Assignee: DB HITEK CO., LTD.Inventors: Dong Jun Oh, Jong Min Kim, Man Lyun Ha, Jae Hyun Kim
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Patent number: 11641527Abstract: An image sensor having a shield including, for example, a metal, is above an electrical charge storage element in a pixel region to block light incident toward the electrical charge storage element, thereby making it possible to reduce or prevent reading a charge value including leakage charge introduced to the electrical charge storage element, and thus adversely affecting an image result.Type: GrantFiled: May 11, 2020Date of Patent: May 2, 2023Assignee: DB HiTek, Co., Ltd.Inventors: Woo-Sung Choi, Man-Lyun Ha, Ju-Il Lee
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Publication number: 20230042681Abstract: Disclosed is a SPAD pixel for a backside illuminated image sensor. More particularly, the SPAD pixel may improve sensitivity to long wavelengths by maximizing the depth of a PN junction in an epitaxial layer in the SPAD substrate.Type: ApplicationFiled: July 13, 2022Publication date: February 9, 2023Inventor: Man Lyun HA
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Publication number: 20220416109Abstract: Provided are a single-photon avalanche diode (SPAD) pixel structure and a method of manufacturing the same. More particularly, provided are a SPAD pixel structure and a method of manufacturing the same, including an additional PN junction in a vertical or horizontal direction to increase photon detection efficiency and thus improve the sensitivity in an imaging device.Type: ApplicationFiled: June 10, 2022Publication date: December 29, 2022Inventors: Ju Hwan JUNG, Byoung Soo CHOI, Man Lyun HA
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Publication number: 20220013565Abstract: A 3D image sensor is disclosed. More particularly, an image sensor in which all constituents, including a photoelectric conversion element and constituents for image data output, are in a three-dimensional stack, thereby improving the degree of integration and freedom of a corresponding layout, and resolving the difference in time response when reading pixel data for each row.Type: ApplicationFiled: June 29, 2021Publication date: January 13, 2022Inventor: Man-Lyun HA
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Publication number: 20210118923Abstract: An image sensor includes a substrate having a first conductivity type, a first charge accumulation region disposed in the substrate and having a second conductivity type, a second charge accumulation region connected with the first charge accumulation region, having the second conductivity type and extending downward from an edge of the first charge accumulation region, a pinning region disposed on the first charge accumulation region and having the first conductivity type, a floating diffusion region spaced laterally from the pinning region, a channel region disposed between the pinning region and the floating diffusion region, and a gate structure disposed on the channel region.Type: ApplicationFiled: October 21, 2020Publication date: April 22, 2021Inventors: Dong Jun OH, Jong Min KIM, Man Lyun HA, Jae Hyun KIM
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Publication number: 20200366857Abstract: An image sensor having a shield including, for example, a metal, is above an electrical charge storage element in a pixel region to block light incident toward the electrical charge storage element, thereby making it possible to reduce or prevent reading a charge value including leakage charge introduced to the electrical charge storage element, and thus adversely affecting an image result.Type: ApplicationFiled: May 11, 2020Publication date: November 19, 2020Inventors: Woo-Sung CHOI, Man-Lyun HA, Ju-Il LEE
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Patent number: 10403660Abstract: An image sensor and a method of manufacturing the same are disclosed. The image sensor includes a photodiode disposed in a substrate, and transistors disposed on the substrate and electrically connected with the photodiode. A gate insulating layer of a source follower transistor among the transistors includes fluorine so as to remove defects such as dangling bonds.Type: GrantFiled: May 25, 2018Date of Patent: September 3, 2019Assignee: DB HITEK CO., LTD.Inventor: Man Lyun Ha
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Patent number: 10186536Abstract: An image sensor is disclosed. The image sensor includes a pixel array including a plurality of pixel units, a controller configured to drive the pixel array, and an analog-digital conversion block configured to convert a sensing signal output from the pixel array to a digital signal, wherein each of the pixel units includes a photodiode and a plurality of transistors on a semiconductor substrate, each of the transistors includes a gate electrode and a gate dielectric layer, each gate dielectric having a thickness, and the thickness of at least one of the gate dielectric layers is different from the thickness of at least one of the other gate dielectric layers.Type: GrantFiled: September 30, 2016Date of Patent: January 22, 2019Assignee: DB Hitek Co., Ltd.Inventor: Man Lyun Ha
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Publication number: 20180342548Abstract: An image sensor and a method of manufacturing the same are disclosed. The image sensor includes a photodiode disposed in a substrate, and transistors disposed on the substrate and electrically connected with the photodiode. A gate insulating layer of a source follower transistor among the transistors includes fluorine so as to remove defects such as dangling bonds.Type: ApplicationFiled: May 25, 2018Publication date: November 29, 2018Inventor: Man Lyun HA
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Publication number: 20170194372Abstract: An image sensor is disclosed. The image sensor includes a pixel array including a plurality of pixel units, a controller configured to drive the pixel array, and an analog-digital conversion block configured to convert a sensing signal output from the pixel array to a digital signal, wherein each of the pixel units includes a photodiode and a plurality of transistors on a semiconductor substrate, each of the transistors includes a gate electrode and a gate dielectric layer, each gate dielectric having a thickness, and the thickness of at least one of the gate dielectric layers is different from the thickness of at least one of the other gate dielectric layers.Type: ApplicationFiled: September 30, 2016Publication date: July 6, 2017Applicant: Dongbu HiTek Co., Ltd.Inventor: Man Lyun HA
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Patent number: 9148602Abstract: An image sensor includes a pixel array including a plurality of unit pixels, each having a photodiode, a transfer transistor, a reset transistor, a drive transistor, and a select transistor, an analog to digital converter for sampling an analogous sensing signal from the pixel array and converting the analogous sensing signal into a digital sensing signal, and a timing controller for forwarding a transfer signal which turns on the transfer transistor until after sampling the sensing signal.Type: GrantFiled: February 8, 2013Date of Patent: September 29, 2015Assignee: Dongbu HiTek Co., Ltd.Inventor: Man Lyun Ha
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Publication number: 20150270300Abstract: A complementary metal-oxide-semiconductor (CMOS) image sensor includes a transfer gate formed on a substrate; a photo diode formed at or in a surface portion of the substrate on one side of the transfer gate, a floating diffusion region formed at or in a surface portion of the substrate on another side of the transfer gate, a first impurity region having a first conductive type formed at or in a surface portion of the substrate between the photo diode and the floating diffusion region, and a buried channel region having a second conductive type formed under the first impurity region.Type: ApplicationFiled: August 8, 2014Publication date: September 24, 2015Applicant: Dongbu HiTekCo., Ltd.Inventor: Man Lyun HA
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Patent number: 8895936Abstract: A pixel array and an image sensor including the pixel array having improved sensitivity and can drive pixels with high resolution, according to embodiments. In embodiments, a pixel array may include a plurality of pixels having a pixel area and a logic area. The pixel array may include at least one of: (1) A photoelectric conversion unit in the pixel area of each of the pixels. (2) A pixel-area transistor disposed at a side of the photoelectric conversion unit in the pixel area. (3) A metal-0 layer on the pixel-area transistor. (4) A metal-1 layer on and/or over the metal-0 layer. (5) A light reception unit on and/or over the metal-1 layer, with the metal-1 layer being the top metal layer in the pixel area.Type: GrantFiled: January 3, 2012Date of Patent: November 25, 2014Assignee: Dongbu HiTek Co., Ltd.Inventors: Man Lyun Ha, Ju Il Lee, Sun Choi
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Patent number: 8829577Abstract: Provided is an image sensor including a drive transistor as a voltage buffer, which can suppress generation of secondary electrons from a channel of the drive transistor to prevent generation of image defects caused by dark current. The transistor includes a gate electrode formed on a substrate, source and drain regions formed in the substrate exposed to both sides of the gate electrode, respectively, and an electric field attenuation region formed on the drain region and partially overlapping the gate electrode.Type: GrantFiled: September 29, 2009Date of Patent: September 9, 2014Assignee: Intellectual Ventures II LLCInventor: Man Lyun Ha
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Publication number: 20140117204Abstract: An image sensor includes a pixel array including a plurality of unit pixels, each having a photodiode, a transfer transistor, a reset transistor, a drive transistor, and a select transistor, an analog to digital converter for sampling an analogous sensing signal from the pixel array and converting the analogous sensing signal into a digital sensing signal, and a timing controller for forwarding a transfer signal which turns on the transfer transistor until after sampling the sensing signal.Type: ApplicationFiled: February 8, 2013Publication date: May 1, 2014Inventor: Man Lyun HA