Abstract: A nitride semiconductor light emitting device has high internal quantum efficiency but low operating voltage. The nitride semiconductor light emitting device includes an n-nitride semiconductor layer; an active layer of multi-quantum well structure formed on the n-nitride semiconductor layer, and having a plurality of quantum well layers and a plurality of quantum barrier layers; and a p-nitride semiconductor layer formed on the active layer. One of the quantum well layers adjacent to the n-nitride semiconductor layer has an energy band gap greater than that of another one of the quantum well layers adjacent to the p-nitride semiconductor layer.

Abstract: The present invention relates to pyrazolylmethylamine-piperazine derivatives and their pharmaceutically acceptable salts effective as calcium channel modulators and a method of manufacturing the same. The present invention also relates to the medicinal use of the above compounds as therapeutic treatment of diseases due to their effect as calcium channel modulators.

Abstract: The present invention relates to a two-wavelength semiconductor laser device, more particularly, to a fabrication method of a multi-wavelength semiconductor laser device. In this method, a substrate having an upper surface separated into at least first and second areas is provided. Then, a first dielectric mask on the substrate is formed to expose only the first area. Then, epitaxial layers for a first semiconductor laser are grown on the first area of the substrate. Then, a second dielectric mask on the substrate is formed to expose only the second area. Then, epitaxial layers for a second semiconductor laser are grown on the second area of the substrate.

Abstract: The present invention relates to the IL-12p40 subunit mutant gene which can produce IL-12 (interleukin 12) of human and mouse origin with high activity, the expression vector including above mutant gene and the use of them to DNA vaccine adjuvant. Particularly, it relates to IL-12p40 mutant gene which inhibits the secretion of IL-12p40 but normally secretes active IL-12p70 by making mutation at Asn-222 (human) or Asn-220 (mouse) amino acid of IL-12p40, which acts as a competitive inhibitor of active form of IL-12, IL-12p70. Therefore, the IL-12p40 mutant gene of the present invention can be useful for DNA vaccination and gene therapy against various diseases, for example, AIDS, hepatitis C or hepatitis B, cancer, influenza, tuberculosis and malaria, which essentially require cellular immune responses for their therapy.

Abstract: Disclosed is a method for fabricating a white LED which comprises, as a single active layer, an InGaN thin film which enables emission of white light. The InGaN thin film is constructed by taking advantage of the spinodal decomposition of the ternary compound and rapid thermal annealing. When growing the InGaN thin film on an n-type GaN formed on a sappier substrate under a growth condition, the thin film undergoes spinodal decomposition into two phases which show photoluminescence of a wavelength range from violet to blue and from green to blue, respectively, after which the surface of the thin film is thermally stabilized by rapid thermal annealing and the photoluminescence of the In-deficient phase is improved, so as to give intensive white photoluminescence to the InGaN single active layer. The LED which recruits such a single active InGaN thin film is superb in light emission efficiency and can be fabricated in a significantly reduced process steps.