Abstract: A method of manufacturing a semiconductor device employing a film carrier tape during process steps thereof is disclosed. Any test pad is not provided in the film carrier tape. Therefore, the semiconductor element carried in the film is cut at the leads and separated from the film carrier tape without conducting any electrical test. The separated semiconductor element is conducted the electrical test by installing it on a testing substrate which is provided to adapt to a large number of terminals.

Abstract: A capacitor built-in integrated circuit packaged unit comprising an electrically conductive support member, first and second lead elements associated with the conductive support member, a stack of a plurality of layers comprising a first insulating layer of a highly dielectric material formed on the conductive support member, an electrically conductive layer on the first insulating layer, and a second insulating layer on the conductive layer, the conductive layer having a portion exposed by the second insulating layer, a semiconductor integrated circuit chip having first and second electrodes which are electrically isolated from each other, the second insulating layer intervening between the conductive layer and the semiconductor integrated circuit chip, a bonding wire electrically connecting the first electrode to the first lead element, and a bonding wire electrically connecting the second electrode to the exposed portion of the conductive layer and to the second lead element.

Abstract: In a framed lead assembly for a semiconductor element, conductive lead strips comprising inward end portions for connection to electrode areas of the semiconductor element are supported to a frame by reinforcing strips of an insulating material made integral with at least center portions of the respective lead strips and a connection arrangement connecting the reinforcing strips with the frame. The connection arrangement may comprise those outward end regions of the respective reinforcing strips which are made integral with the frame of the insulating material and those outward end areas of the respective lead strips which are attached to the frame. The reinforcing strips may be connected together by bridge members of either the insulating material or another insulating material.

Abstract: A fine wire made of a gold alloy for use in a semiconductor device. The alloy consists essentially of at least one control element selected from the group consisting of carbon in an amount of 1 to 25 wt. ppm., silicon in an amount of 1 to 25 wt. ppm., germanium in an amount of 3 to 30 wt. ppm., tin in an amount of 5 to 30 wt. ppm., and lead in an amount of 5 to 30 wt. ppm.; with balance gold of a purity of more than 99.995 wt.