Abstract: A semiconductor device manufacturing apparatus and its method, measures the amount or chemical composition of reaction products adhering to or deposited on the inside of a processing chamber of the semiconductor device manufacturing apparatus, without exposing the chamber to the air. External light, such as infrared light, is introduced from a light introducing unit into the processing chamber. A light receiving unit provided outside the processing chamber receives light reflected from a specified location inside the processing chamber or light reflected from an arbitrary location inside the chamber. The received light is then subjected to spectrometry or photometry to judge how badly the chamber is contaminated and to judge the state of the process being carried out.

Abstract: An evacuation system in an ultra-high vacuum sputtering apparatus capable of shortening the pumping time of the system. A main pump, composed of a turbo-molecular pump and a baffle is positioned upstream of a main pump and cooled to a temperature in which argon gas is not absorbed and only water is absorbed. The pump and a vacuum chamber are separated by a valve. A pipeline circulates a heating medium to rapidly heat and cool the vacuum chamber for enabling a gas discharge from the vacuum chamber whereby the pumping time can be reduced and the overall production of the system can be increased.