Abstract: Provided are a resist composition that can improve coatability (coating film formability) with respect to a substrate in spin coating and close adherence of a resist film and that can form a good pattern, and a resist film in which a good pattern is formed. The resist composition contains a polymer, a solvent, and an aromatic vinyl monomer, and has a content of the aromatic vinyl monomer relative to the polymer of not less than 10 mass ppm and not more than 30,000 mass ppm.

Abstract: Provided is a positive resist composition for EUV lithography that can form a resist film having high sensitivity to extreme ultraviolet light. The positive resist composition contains a solvent and a copolymer that includes a monomer unit (A) represented by general formula (I) and a monomer unit (B) represented by general formula (II). In the formulae, R1 indicates an organic group including 5 or more fluorine atoms, le indicates a hydrogen atom, a fluorine atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, R3 indicates a hydrogen atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, p and q are each an integer of 0 to 5, and p+q=5.

Abstract: This nickel-containing steel for low temperature includes, as a chemical composition, by mass %: C: 0.030% to 0.070%; Si: 0.03% to 0.30%; Mn: 0.10% to 0.80%; Ni: 12.5% to 17.4%; Mo: 0.03% to 0.60%; Al: 0.010% to 0.060%; N: 0.0015% to 0.0060%; and O: 0.0007% to 0.0030%, in which a metallographic structure contains 2.0% to 30.0% of an austenite phase by volume fraction %, in a thickness middle portion of a section parallel to a rolling direction and a thickness direction, an average grain size of prior austenite grains is 3.0 ?m to 20.0 ?m, and an average aspect ratio of the prior austenite grains is 3.1 to 10.0.

Abstract: The objective is to favorably form a clear resist pattern using a resist composition containing a polymer that can inhibit resist pattern collapse when used as a main chain scission-type positive resist. A method of forming a resist pattern includes: a step of forming a resist film using a positive resist composition containing a polymer including a monomer unit (A) represented by general formula (I), shown below, and a monomer unit (B) represented by general formula (II), shown below, with a proviso that at least one of the monomer unit (A) and the monomer unit (B) includes at least one fluorine atom; an exposure step; and a development step. The development is carried out using a developer having a surface tension of 17 mN/m or less.

Abstract: A nickel-containing steel for low temperature according to an aspect of the present invention has a chemical composition within a predetermined range, in which a metallographic structure of a thickness middle portion contains 2.0 vol % to 20.0 vol % of an austenite phase, an average grain size of prior austenite grains is 3.0 ?m to 15.0 ?m, an average aspect ratio of the prior austenite grains is 1.0 to 2.4, a plate thickness is 4.5 mm to 30 mm, the chemical composition and the average grain size of the prior austenite grains are further limited depending on the plate thickness, a yield stress at room temperature is 460 MPa to 710 MPa, and a tensile strength at the room temperature is 560 MPa to 810 MPa.

Abstract: A Ni steel for low temperature according to an aspect of the present invention has a chemical composition within a predetermined range, in which a metallographic structure of a thickness middle portion contains 2.0 vol % to 20.0 vol % of an austenite phase, an average grain size of prior austenite grains is 3.0 ?m to 12.0 ?m, an average aspect ratio of the prior austenite grains is 2.6 to 10.0, a plate thickness is 4.5 mm to 20 mm, a yield stress at room temperature is 590 MPa to 710 MPa, and a tensile strength at the room temperature is 690 MPa to 810 MPa, when the plate thickness is more than 16 mm, the Ni steel contains Ni: 11.5% or more, and when the plate thickness is 16 mm or less and the Ni steel contains Ni: less than 11.5%, the average grain size of the prior austenite grains is 6.0 ?m or less.

Abstract: Provided is a positive resist composition capable of improving the adhesion between a resist film formed through pre-baking and a workpiece and reducing changes in the molecular weight of the polymer in the resist film before and after pre-baking step over broader ranges of heating temperature and heating time (at lower heating temperatures) during pre-baking.

Abstract: Provided is a polymer that when used as a main chain scission-type positive resist, can sufficiently inhibit resist pattern collapse, can favorably form a clear resist pattern, and can also improve sensitivity. The polymer includes a monomer unit (A) represented by general formula (I), shown below, and a monomer unit (B) represented by general formula (II), shown below. [In formula (I), R1 is an organic group including not fewer than 5 and not more than 7 fluorine atoms. In formula (II), R2 is a hydrogen atom, a fluorine atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, R3 is a hydrogen atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, p and q are each an integer of not less than 0 and not more than 5, and p+q=5.

Abstract: Provided are an industrially advantageous method for separating and purifying isobutylene, the method enabling high-purity isobutylene to be efficiently obtained by a simple process, and a method for producing isobutylene. A method for separating and purifying isobutylene from a reaction gas containing the isobutylene and unreacted isobutanol, comprising: a step (1) of contacting the reaction gas containing the isobutylene and unreacted isobutanol with a first solvent to obtain a first gas containing the isobutylene and a recovered solution containing the unreacted isobutanol; a step (2) of contacting the first gas with a specific second solvent to allow the second solvent to absorb the isobutylene contained in the first gas to obtain an absorption solution containing the isobutylene; and a step (3) of distilling the absorption solution to obtain separated and purified isobutylene. A method for producing isobutylene using the separation and purification method.

Abstract: A steel for electron-beam welding according to the present invention includes at least C: 0.02% to 0.10%, Si: 0.03% to 0.30%, Mn: 1.5% to 2.5%, Ti: 0.005% to 0.015%, N: 0.0020% to 0.0060%, and O: 0.0010% to 0.0035%, further includes S: limited to 0.010% or less, P: limited to 0.015% or less, and Al: limited to 0.004% or less, with a balance including iron and inevitable impurities. An index value CeEBB obtained by substituting composition of the steel into following Formula 1 falls in the range of 0.42 to 0.65%, the number of oxide having an equivalent circle diameter of 1.0 ?m or more is 20 pieces/mm2 or less at a thickness center portion in cross section along the thickness direction of the steel, and the number of oxide containing Ti of 10% or more and having an equivalent circle diameter of not less than 0.05 ?m or more and less than 0.5 ?m falls in the range of 1×103 to 1×105 pieces/mm2 at the thickness center portion.

Abstract: Provided are a polymer that can be favorably used as a positive resist having a high ? value and a positive resist composition that can favorably form a high-resolution pattern. The polymer includes an ?-methylstyrene unit and a methyl ?-chloroacrylate unit, and has a molecular weight distribution (Mw/Mn) of less than 1.48. The positive resist composition contains the aforementioned polymer and a solvent.

Abstract: Provided are an industrially advantageous method for separating and purifying isobutylene, the method enabling high-purity isobutylene to be efficiently obtained by a simple process, and a method for producing isobutylene. A method for separating and purifying isobutylene from a reaction gas containing the isobutylene and unreacted isobutanol, comprising: a step (1) of contacting the reaction gas containing the isobutylene and unreacted isobutanol with a first solvent to obtain a first gas containing the isobutylene and a recovered solution containing the unreacted isobutanol; a step (2) of contacting the first gas with a specific second solvent to allow the second solvent to absorb the isobutylene contained in the first gas to obtain an absorption solution containing the isobutylene; and a step (3) of distilling the absorption solution to obtain separated and purified isobutylene. A method for producing isobutylene using the separation and purification method.

Abstract: Provided are a polymer that can be favorably used as a positive resist having a low film reduction rate in a state of low irradiation with ionizing radiation or the like and a positive resist composition that can favorably form a high-resolution pattern. The polymer includes an ?-methylstyrene unit and a methyl ?-chloroacrylate unit, and the proportion of components having a molecular weight of less than 6,000 in the polymer is no greater than 0.5%. The positive resist composition contains the aforementioned polymer and a solvent.

Abstract: Provided are a polymer that can be favorably used as a positive resist having a low film reduction rate under low irradiation, a high ? value, and high sensitivity, and a positive resist composition that can efficiently form a high-resolution pattern. The polymer includes an ?-methylstyrene unit and a methyl ?-chloroacrylate unit, and has a molecular weight distribution (Mw/Mn) of less than 1.48. In the polymer, the proportion of components having a molecular weight of less than 6,000 is no greater than 0.5% and the proportion of components having a molecular weight of greater than 80,000 is no greater than 6.0%. The positive resist composition contains the aforementioned polymer and a solvent.

Abstract: A polymer includes a monomer unit (A) represented by general formula (I), shown below, and a monomer unit (B) represented by general formula (II), shown below, wherein at least one of the monomer unit (A) and the monomer unit (B) includes at least one fluorine atom. In the formulae, R1 is a chlorine atom, a fluorine atom, or a fluorine atom-substituted alkyl group, R2 is an unsubstituted alkyl group or a fluorine atom-substituted alkyl group, R3 to R6, R8, and R9 are each a hydrogen atom, a fluorine atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, R7 is a hydrogen atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, p and q are each an integer of at least 0 and not more than 5, and p+q=5.

Abstract: The objective is to favorably form a clear resist pattern using a resist composition containing a polymer that can inhibit resist pattern collapse when used as a main chain scission-type positive resist. A method of forming a resist pattern includes: a step of forming a resist film using a positive resist composition containing a polymer including a monomer unit (A) represented by general formula (I), shown below, and a monomer unit (B) represented by general formula (II), shown below, with a proviso that at least one of the monomer unit (A) and the monomer unit (B) includes at least one fluorine atom; an exposure step; and a development step. The development is carried out using a developer having a surface tension of 17 mN/m or less.

Abstract: Provided are a polymer that can be favorably used as a positive resist having high sensitivity and a positive resist composition that can favorably form a resist film having excellent sensitivity. The polymer includes an ?-methylstyrene unit and a methyl ?-chloroacrylate unit, and the proportion of components having a molecular weight of greater than 80,000 in the polymer is no greater than 6.0%. The positive resist composition contains the aforementioned polymer and a solvent.

Abstract: Provided are a polymer that can be favorably used as a positive resist having a low film reduction rate under low irradiation, a high y value, and high sensitivity, and a positive resist composition that can efficiently form a high-resolution pattern. The polymer includes an a-methylstyrene unit and a methyl ?-chloroacrylate unit, and has a molecular weight distribution (Mw/Mn) of less than 1.48. In the polymer, the proportion of components having a molecular weight of less than 6,000 is no greater than 0.5% and the proportion of components having a molecular weight of greater than 80,000 is no greater than 6.0%. The positive resist composition contains the aforementioned polymer and a solvent.

Abstract: Provided are a polymer that can be favorably used as a positive resist having a low film reduction rate in a state of low irradiation with ionizing radiation or the like and a positive resist composition that can favorably form a high-resolution pattern. The polymer includes an ?-methylstyrene unit and a methyl ?-chloroacrylate unit, and the proportion of components having a molecular weight of less than 6,000 in the polymer is no greater than 0.5%. The positive resist composition contains the aforementioned polymer and a solvent.

Abstract: Provided are a polymer that can be favorably used as a positive resist having a high ? value and a positive resist composition that can favorably form a high-resolution pattern. The polymer includes an ?-methylstyrene unit and a methyl ?-chloroacrylate unit, and has a molecular weight distribution (Mw/Mn) of less than 1.48. The positive resist composition contains the aforementioned polymer and a solvent.