Abstract: A plasma CVD apparatus includes first and second electrodes, neutral gas introduction pipes, and a plasma confining electrode interposed between the first and second electrodes to separate a plasma generation region and a substrate processing region. The plasma confining electrode has a hollow structure defined by an upper electrode plate, and a lower electrode plate, and has gas diffusing plates provided in the hollow structure, and has radical passage holes provided to supply radicals from the plasma generation region into the substrate processing region while isolating from a neutral gas. The plasma confining electrode is connected to the neutral gas introduction pipes, and a plurality of neutral gas passage holes are provided for each of the lower electrode plate and the gas diffusing plates to supply the neutral gas into the substrate processing region.

Abstract: A plasma CVD apparatus includes first and second electrodes, neutral gas introduction pipes, and a plasma confining electrode interposed between the first and second electrodes to separate a plasma generation region and a substrate processing region. The plasma confining electrode has a hollow structure defined by an upper electrode plate, and a lower electrode plate, and has gas diffusing plates provided in the hollow structure, and has radical passage holes provided to supply radicals from the plasma generation region into the substrate processing region while isolating from a neutral gas. The plasma confining electrode is connected to the neutral gas introduction pipes, and a plurality of neutral gas passage holes are provided for each of the lower electrode plate and the gas diffusing plates to supply the neutral gas into the substrate processing region.

Abstract: A plasma CVD apparatus includes first and second electrodes, neutral gas introduction pipes, and a plasma confining electrode interposed between the first and second electrodes separating a plasma generation region and a substrate processing region. The plasma confining electrode has a hollow structure defined by an upper electrode plate, and a lower electrode plate and is connected to the neutral gas introduction pipes. A plurality of neutral gas passage holes are provided for the lower electrode plate and the gas diffusing plates to supply neutral gas into the substrate processing region. A total opening area of the plurality of neutral gas passage holes in the gas diffusing plate on a side of the upper electrode plate is smaller than that of the plurality of neutral gas passage holes in the gas diffusing plate on a side of the lower electrode plate.

Abstract: A chromatographic separation process of a type wherein a feedstock fluid containing a plurality of components is supplied into a circulative chromatographic separation system, the process comprising the steps of (i) supplying the feedstock fluid and withdrawing a fraction enriched in a component, (ii) supplying a desorbent fluid and withdrawing a fraction enriched in another component, and (iii) circulating the fluid through the bed without supplying or withdrawing any fluid thereby making a mixed zone comprising a plurality of components move, a cycle including steps (i), (ii) and (iii) being repeated, wherein the packed bed comprises a first unit bed packed with an adsorbent, to which the feedstock fluid is supplied, and at least one other unit bed packed with an adsorbent, and the adsorbent (e.g.

Abstract: A dividing plate for a thin-film deposition apparatus divides the interior of the vacuum reaction chamber into a plasma discharge space and a film deposition process space, by fixing or connecting a plurality of laminated plates together by securely bonding them over the entire area of their interfacial surfaces, or a large portion thereof.

Abstract: In a film deposition process wherein a plasma generation chamber is divided from a deposition chamber, radicals are extracted from the plasma generation chamber to the deposition chamber and caused to react with a process gas to form a silicon oxide film. The deposition apparatus has a host controller for dictating a pattern of control of the process gas flow to an MFC provided in a feed part for feeding the process gas into the deposition chamber. The host controller gives the MFC instructions for executing control to, in a first half side time constituting not more than half of the whole film deposition time, first make zero or limit and then gradually increase the process gas flow. The process gas flow in the first half side time can also be limited so that the thickness of film deposited in the first half side time is not greater than 10% of the overall thickness of the silicon oxide film. A silicon-hydrogen compound (SinH2n+2 (n=1, 2, 3, . . . )) is used as the process gas.

Abstract: A chromatographic separation process of a type wherein a feedstock fluid containing a plurality of components is supplied into a circulative chromatographic separation system, the process comprising the steps of (i) supplying the feedstock fluid and withdrawing a fraction enriched in a component, (ii) supplying a desorbent fluid and withdrawing a fraction enriched in another component, and (iii) circulating the fluid through the bed without supplying or withdrawing any fluid thereby making a mixed zone comprising a plurality of components move, a cycle including steps (i), (ii) and (iii) being repeated, wherein the packed bed comprises a first unit bed packed with an adsorbent, to which the feedstock fluid is supplied, and at least one other unit bed packed with an adsorbent, and the adsorbent (e.g.

Abstract: In a film deposition process wherein a plasma generation chamber is divided from a deposition chamber, radicals are extracted from the plasma generation chamber to the deposition chamber and caused to react with a process gas to form a silicon oxide film. The deposition apparatus has a host controller for dictating a pattern of control of the process gas flow to an MFC provided in a feed part for feeding the process gas into the deposition chamber. The host controller gives the MFC instructions for executing control to, in a first half side time constituting not more than half of the whole film deposition time, first make zero or limit and then gradually increase the process gas flow. The process gas flow in the first half side time can also be limited so that the thickness of film deposited in the first half side time is not greater than 10% of the overall thickness of the silicon oxide film. A silicon-hydrogen compound (SinH2n+2(n=1,2,3, . . . )) is used as the process gas.

Abstract: A thermal transfer medium is disclosed which is useful in a method for forming a color image by selectively melt-transferring at least two of a yellow heat-meltable ink layer, a magenta heat-meltable ink layer and a cyan heat-meltable ink layer onto a receptor having a microporous surface layer. The thermal transfer medium includes a foundation having thereon a yellow heat-meltable ink layer, a magenta heat-meltable ink layer and a cyan heat-meltable ink layer, a non-transferable undercoat layer being provided between the foundation and the respective ink layers, each of the ink layers comprising a coloring agent and a vehicle comprising a wax as a major ingredient, each of the ink layers having a melt viscosity of 20 to 200 cps/90 .degree. C., the undercoat layer comprising a resin exhibiting a strong adhesion to a wax. The thermal transfer medium gives highly fine color images excellent in gradation quality and color reproducibility on the basis of subtractive color mixture of yellow, magenta and cyan.

Abstract: A thermal transfer material is disclosed which is useful in a method for forming a color image comprising selectively melt-transferring at least one of a yellow heat-meltable ink layer, a magenta heat-meltable ink layer and a cyan heat-meltable ink layer onto a receptor having a multiplicity of micropores in the surface layer thereof to enter each ink in a molten state into the micropores, thereby forming a color image comprising at least one of (A) at least one color region of single color of yellow, magenta and cyan, and (B) at least one color region developed on the basis of subtractive color mixture of at least two of yellow, magenta and cyan. The thermal transfer material comprises at least one of a yellow heat-meltable ink layer, a magenta heat-meltable ink layer and a cyan heat-meltable ink layer provided on a foundation or foundations, each ink layer having a melt viscosity of 20 to 200 cps/90.degree. C. and a coating amount of 0.5 to 2.5 g/m.sup.2, the foundation having a thickness of 1.0 to 4.5 .mu.

Abstract: A transfer printing method is provided which comprises the steps of: selectively melt-transferring at least one of heat-meltable ink layers Y, M and C containing heat-migrating dyes for respective colors onto a foundation to form an ink image on the foundation, selectively melt-transferring a heat-meltable layer T containing a readily dyeable heat-meltable resin onto the ink image, giving a master sheet, and placing the master sheet on an image receptor and heating the resulting assembly under pressure to form a dyed image on the image receptor. The transfer printing method gives a clear dyed image, especially a clear full-color dyed image, on any image receptor regardless of the kind thereof.

Abstract: Disclosed is a transfer printing method including the steps of: with use of a thermal transfer ink sheet wherein a heat-meltable ink Y containing a sublimation dye for yellow, a heat-meltable ink sublimation M containing a dye for magenta and a heat-meltable ink C containing a sublimation dye for cyan are applied on a single foundation or separate foundations respectively, selectively melt-transferring at least two of the sublimation inks Y, M and C onto a master sheet to form a master image in which at least two of respective images of the sublimation inks Y, M and C are superimposed one on the other; and transferring the sublimation dyes contained in the superimposed images onto an image receptor, wherein the sublimation inks Y, M and C are transferred onto the master sheet in the order of ink C, ink M and ink Y with an optional skipping-over of untransferred sublimation ink to the succeeding one.

Abstract: In a sublimation transfer method wherein a heat-meltable ink layer containing a sublimation dye is melt-transferred to give a master having an image of the ink, and the sublimation dye in the ink image is heat-transferred to form a dyed image on a substrate, there is used a heat-melt transfer medium wherein a release layer comprising a wax-like substance as a major component is provided between a foundation and the ink layer, or an adhesive layer comprising a wax-like substance as a major component is provided on the ink layer, or both the release layer and the adhesive layer are provided. The releasability of the ink layer from the foundation and the adhesiveness of the ink layers with each other are good. The method is especially useful to form a full-color dyed image.